SD1002 [SIRECTIFIER]
Discrete Diodes;
| 型号： | SD1002 |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | Discrete Diodes 测试 功率感应器 电感器 |
| 文件： | 总2页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD10
Discrete Diodes
Dimensions TO-220AC
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
C
A
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
0.230 0.420
0.100 0.135
0.045 0.070
12.70 14.73
14.23 16.51
9.66 10.66
C
A=Anode, C=Cathode, TAB=Cathode
3.54
5.85
2.54
1.15
-
4.08
6.85
3.42
1.77
6.35
0.89
5.33
4.82
0.56
2.49
1.39
VRSM
V
VRRM
V
SD1001
SD1002
SD1004
SD1008
SD1010
200
300
500
900
1100
100
-
0.250
200
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
0.64
4.83
3.56
0.38
2.04
0.64
400
800
1000
1200
1600
SD1012
SD1016
1300
1700
Symbol
Test Conditions
Maximum Ratings
Unit
IF(AV)M
TC=95oC; 180o sine
10
A
TVJ=45oC;
VR =0V;
t=10ms (50Hz), sine
150
175
125
170
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
IFSM
A
TVJ=150oC;
VR =0V;
TVJ=45oC;
VR =0V;
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
230
260
200
220
I2t
A2s
oC
TVJ=150oC;
VR =0V;
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Md
Mounting torque
0.4...0.6
2
Nm
g
Weight
Symbol
Test Conditions
Characteristic Values
Unit
_
IR
TVJ=TVJM; VR=VRRM
o
< 1
mA
V
_
VF
VTO
rT
IF=10A; TVJ=25 C
For power-loss calculations only
TVJ=TVJM
< 1.25
0.85
16
V
m
RthJC
DC current
1.29
K/W
P1
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©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
SD10
Discrete Diodes
50
A
250
103
A2s
50Hz, 80% VRRM
VR = 0 V
A
I2t
40
200
IFSM
TVJ = 45°C
IF
30
20
10
0
150
100
50
TVJ = 45°C
TVJ=150°C
TVJ= 25°C
TVJ = 150°C
TVJ = 150°C
0
102
0.0
0.4
0.8
1.2
1.6
0.001
0.01
0.1
s
1
1
2
3
4
5 6 7 10
ms
V
t
VF
t
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 Surge overload current
Fig. 3 I2t versus time per diode
60
35
A
W
30
IF(AV)M
25
RthHA
:
Ptot
40
1
2
3
5
7
K/W
K/W
K/W
K/W
K/W
20
15
10
5
10 K/W
15 K/W
20
0
0
A
0
10
20
30
0
20 40 60 80 100 120 140 °C
Tamb
0
20 40 60 80 100 120 140 °C
TC
Id(AV)M
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180 °
Fig. 5 Max. forward current versus
case temperature
1.2
K/W
1.0
ZthJC
0.8
0.6
0.4
0.2
0.0
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
5
0.01362
0.1962
0.267
0.3052
0.218
0.0001
0.00316
0.023
0.4
0.15
0.001
0.01
0.1
1
s
10
t
Fig. 6 Transient thermal impedance junction to case
P2
www.sirectifier.com
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
相关型号：
SD100CS
Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 100V V(RRM), Silicon, TO-252AA, PLASTIC, DPAK-3
SENSITRON
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