SD250-01NRB [SIRECTIFIER]
Discrete Diodes;
| 型号： | SD250-01NRB |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | Discrete Diodes |
| 文件： | 总2页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD250
Discrete Diodes
Dimensions
SD250-**NFB
SD250-**NRB
VRSM VRRM
V
V
SD250-01NFB / SD250-01NRB 100 100
SD250-02NFB / SD250-02NRB 200 200
SD250-04NFB / SD250-04NRB 400 400
SD250-08NFB / SD250-08NRB 800 800
SD250-10NFB / SD250-10NRB 1000 1000
SD250-12NFB / SD250-12NRB
SD250-16NFB / SD250-16NRB
1200 1200
1600 1600
■Electrical Characteristics
Symbol
Item
Ratings
250
Conditions
Unit
A
F（AV）
I
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
Single phase, half wave, 180。conduction, Tc：92℃
F（RMS）
I
390
A
Single phase, half wave, 180。conduction, Tc：92℃
1
FSM
I
A
／cycle, 50Hz/60Hz, peak value, non-repetitive
4000/4500
84000
2
2
2
2
I
I t
Value for one cycle of surge current
A S
t
Tj
Junction Temperature
Storage Temperature
－30 to ＋150
－30 to ＋125
4.7（48）
11（115）
170
℃
℃
Tstg
Mounting（M6） Recommended Value 2.5-3.9（25-40）
Mounting
Torque
N･m
（㎏f･B）
Termina
（
l
M8） Recommended Value 8.8-10 （90-105）
Mass
g
Ratings
15
Item
Conditions
Unit
mA
Symbol
IRRM
Repetitive Peak Reverse Current, max.
Forward Voltage Drop, max.
Thermal Impedance, max.
DRM
at V
, single phase, half wave, Tj＝150℃
VFM
1.15
0.2
V
Foward current 800A, Tj＝25℃, Inst. measurement
Junction to case
Rth（j-c）
℃/W
P1
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©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
SD250
Discrete Diodes
Average Forward Current vs. �
Maximum Forward Characteristics
Power Dissipation
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P2
www.sirectifier.com
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
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