SD4503 [SIRECTIFIER]
整流二极管Diode Rectifiers，分立式整流二极管Discrete Diodes，Tj = -40°C ~ 150°C, Tjm = 150°C。; 整流二极管二极管整流器，分立式整流二极管分立二极管， TJ = -40 ° C〜 150 ° C， TJM = 150 ℃。
| 型号： | SD4503 |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 整流二极管Diode Rectifiers，分立式整流二极管Discrete Diodes，Tj = -40°C ~ 150°C, Tjm = 150°C。 |
| 文件： | 总2页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD45
Discrete Diodes
Dim.
Millimeter
Min. Max. Min.
Inches
Max.
Dimensions TO-247AC
A
C
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
C(TAB)
A
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
C
A=Anode, C=Cathode, TAB=Cathode
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
VRSM
V
VRRM
G
H
1.65 2.13 0.065 0.084
V
-
4.5
-
0.177
SD4501
SD4502
SD4503
SD4504
SD4505
SD4506
SD4507
50
50
J
K
1.0
1.4 0.040 0.055
100
200
400
600
800
1000
100
200
400
600
800
1000
10.8 11.0 0.426 0.433
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
N
1.5 2.49 0.087 0.102
Symbol
Test Conditions
Maximum Ratings
Unit
IF(AV)M
TC=105oC; 180o sine
45
A
TVJ=45oC;
VR =0V;
t=10ms (50Hz), sine
475
520
380
420
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
IFSM
A
TVJ=150oC;
VR =0V;
TVJ=45oC;
VR =0V;
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
1120
1120
720
I2t
A2s
oC
TVJ=150oC;
VR =0V;
720
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Md
Mounting torque
0.8...1.2
2500
6
Nm
V~
g
VISOL
50/60 Hz, RMS, t=1 minute, leads-to-tab
Weight
Symbol
Test Conditions
Characteristic Values
Unit
_
IR
VF
VTO
rT
TVJ=TVJM; VR=VRRM
IF=45A; TVJ=25oC
< 3
mA
V
_
< 1.18
For power-loss calculations only
TVJ=TVJM
0.8
V
8
m
RthJC
RthCH
DC current
typical
0.55
0.2
K/W
SD45
Discrete Diodes
70
A
500
104
A2s
50Hz, 80% VR R M
VR = 0 V
A
60
I2t
400
IFS M
TVJ=150°C
TVJ= 25°C
IF
50
40
30
20
10
0
TVJ = 45°C
300
200
100
0
TVJ = 45°C
103
TVJ = 150°C
TVJ = 150°C
102
V
0.0
0.4
0.8
1.2
1.6
0.001
0.01
0.1
1
1
2
3
4 15 6 7 0
ms
s
VF
t
t
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 S urge overload current
Fig. 3 I2t versus time per diode
100
50
A
R thHA
:
W
0.5 K/W
1.0 K/W
1.5K/W
2.0 K/W
3.0 K/W
4.0 K/W
6.0 K/W
80
40
Ptot
IF(AV)M
60
40
20
0
30
20
10
0
0
10
20
30
40
A
0
20 40 60 80 100 120 140 °C
Tamb
0
20 40 60 80 100 120 140 °C
TC
Id(AV)M
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180°
0.6
Fig. 5 Max. forward current versus
case temperature
K/W
ZthJC
0.4
0.2
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
0.1633
0.2517
0.0933
0.04167
0.016
0.118
0.588
2.6
2
3
4
DSI45
0.0
0.001
0.01
0.1
1
s
10
t
Fig. 6 Transient thermal impedance junction to case
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