SDD100N14B [SIRECTIFIER]
Diode-Diode Modules;
| 型号： | SDD100N14B |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | Diode-Diode Modules |
| 文件： | 总4页 (文件大小：326K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDD100NXXB
Diode-Diode Modules
Tolerance:+0.5mm
-
Dimensions in mm (1mm=0.0394")
Type
VRSM
V
VRRM
V
SDD100N08B
SDD100N12B
SDD100N14B
SDD100N16B
SDD100N18B
900
800
1300
1500
1700
1900
1200
1400
1600
1800
Symbol
Test Conditions
Maximum Ratings
Unit
TVJ=TVJM
180
100
IFRMS
IFAVM
A
TC=100oC; 180o sine
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
1700
1950
1540
1800
IFSM
A
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
14450
15700
11850
13400
i2dt
A2s
-40...+150
150
-40...+125
TVJ
TVJM
Tstg
oC
50/60Hz, RMS
IISOL<1mA
t=1min
t=1s
3000
3600
V~
VISOL
_
Mounting torque (M5)
Terminal connection torque (M5)
2.5-4/22-35
2.5-4/22-35
Nm/lb.in.
g
Md
Typ.
105
Weight
P1
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com
SDD100NXXB
Diode-Diode Modules
Symbol
Test Conditions
Characteristic Values
Unit
TVJ=TVJM; VR=VRRM
IF=300A; TVJ=25oC
15
1.5
0.8
2.3
170
45
mA
V
IR
VF
For power-loss calculations only
V
VTO
rT
m
TVJ=TVJM
TVJ=125oC; IF=50A; -di/dt=3A/us
uC
A
QS
IRM
per diode; DC current
per module
0.35
0.175
K/W
K/W
RthJC
RthJK
per diode; DC current
per module
0.55
0.275
Creepage distance on surface
Strike distance through air
12.7
9.6
50
mm
mm
m/s2
dS
dA
a
Maximum allowable acceleration
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Copper base plate
* Supplies for DC power equipment
* DC supply for PWM inverter
* Field supply for DC motors
* Battery DC power supplies
* Space and weight savings
* Simple mounting
* Glass passivated chips
* Isolation voltage 3600 V~
* UL file NO.310749
* Improved temperature and power
cycling
* Reduced protection circuits
* RoHs compliant
P2
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©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
SDD100NXXB
Diode-Diode Modules
150
150
W
0.8
0.7 0.6 0.5 0.4 0.3
Rth(c-a)
rec.
180
1
.
/2 SDD100B
W
0.9
1.0
rec.
120
rec.
60
100
100
50
1.2
cont.
1.4
1.7
2
2.5
50
3
4
P
FAV
P
FAV
K/W
0
0
150
0
IFAV
40
60
OC
80
120
20
100
0
T
a
50
100
A
Fig.11R Power dissipation per diode vs. ambient temperature
Fig.11L Power dissipation per diode vs. forward current
600
73
600
0.1
15
Rth(c-a)
B
L
2
OC
83
0.15
W
.
W
500
2
SDD100B
500
0.175
0.2
R
400
300
200
100
400
300
200
100
0.25
93
0.3
0.35
0.4
0.5
103
113
0.6
0.7
0.8
1.0
T
c
K/W
P
vtot
P
vtot
123
OC 150
0
0
I
50
0
100
0
Ta
200
300
100
A
Fig.12L Power dissipation of two modules vs. direct current
Fig.12R Power dissipation of two modules vs. case temperature
82
OC
92
0.1 0.075
Rth(c-a)
700
W
700
W
600
.
3
100B
SDD
B6
600
0.15
500
400
500
0.175
0.2
400
102
112
0.25
0.3
300
300
0.4
0.5
0.6
200
200
0.7
T
c
Pvtot
P
vtot
K/W
122
0
0
OC
T
a
50
100
150
I
200
A
0
0
300
100
Fig.13L Power dissipation of three modules vs. direct current
Fig.13R Power dissipation of three modules vs. case temperature
P3
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com
SDD100NXXB
Diode-Diode Modules
0.6
400
typ.
1
.
max.
/2 SDD100B
K/W
1
.
A
/2 SDD100B
Zth(j-s)
0.5
0.4
0.3
0.2
300
Zth(j-c)
200
100
Tvj=25 OC
0.1
Tvj=125OC
- -
IF
Z
th
0
0
V
F
0.5
1
1.5
v
2
0
t
0.01
0.1
1
10
s 100
0.001
Fig.15 Forward characteristics
Transient thermal impedance vs. time
Fig.14
2
1
.
/2 SDD100B
I
I
F(OV)
FSM
1.6
I
I
FSM(25 OC) =2500A
FSM(125OC)=2000A
1.4
1.2
1
.
V
0
V
RRM
.
0.5
1
RRM
.
V
RRM
0.8
0.6
0.4
1
t
10
100
ms 1000
Fig.16 Surge overload current vs. time
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P4
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
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