SSAC100GK12 [SIRECTIFIER]
晶闸管(可控硅)Thyristors (SCRs),固态交流开关(反并联晶闸管模块),Solid State AC Controller (Anti-Parallel Thyristor-Thyristor Modules).; 晶闸管(可控硅)晶闸管(SCR ) ,固态交流开关(反并联晶闸管模块) ,固态交流开关(晶闸管反并联可控硅模块) 。型号: | SSAC100GK12 |
厂家: | SIRECTIFIER SEMICONDUCTORS |
描述: | 晶闸管(可控硅)Thyristors (SCRs),固态交流开关(反并联晶闸管模块),Solid State AC Controller (Anti-Parallel Thyristor-Thyristor Modules). |
文件: | 总4页 (文件大小:911K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SSAC100
Solid State AC Controller(Anti-Parallel Thyristor-Thyristor Modules)
Dimensions in mm (1mm=0.0394")
Type
VRSM
VDSM
V
VRRM
VDRM
V
SSAC100GK08
SSAC100GK12
SSAC100GK14
SSAC100GK16
SSAC100GK18
SSAC100GK20
SSAC100GK22
900
800
1300
1500
1700
1900
2100
2300
1200
1400
1600
1800
2000
2200
Symbol
Test Conditions
Maximum Ratings
Unit
I
I
TRMS, IFRMS TVJ=TVJM
180
100
A
TAVM, IFAVM TC=85oC; 180o sine
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
1700
1800
1540
1640
ITSM, IFSM
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
14450
13500
11850
11300
VR=0
i2dt
A2s
TVJ=TVJM
VR=0
150
TVJ=TVJM
f=50Hz, tp=200us
(di/dt)cr VD=2/3VDRM
IG=0.45A
repetitive, IT=250A
A/us
500
non repetitive, IT=ITAVM
VDR=2/3VDRM
diG/dt=0.45A/us
TVJ=TVJM;
RGK= ; method 1 (linear voltage rise)
1000
V/us
W
(dv/dt)cr
TVJ=TVJM
IT=ITAVM
tp=30us
tp=300us
10
5
PGM
0.5
10
W
V
PGAV
VRGM
-40...+125
125
-40...+125
TVJ
TVJM
Tstg
oC
50/60Hz, RMS
IISOL<1mA
t=1min
t=1s
3000
3600
VISOL
V~
_
Mounting torque (M5)
Terminal connection torque (M5)
2.5-4.0/22-35
2.5-4.0/22-35
Nm/lb.in.
g
Md
Typical including screws
Weight
90
SSAC100
Solid State AC Controller(Anti-Parallel Thyristor-Thyristor Modules)
Symbol
Test Conditions
Characteristic Values
Unit
TVJ=TVJM; VR=VRRM; VD=VDRM
IT, IF=300A; TVJ=25oC
15
mA
V
IRRM, IDRM
VT, VF
VTO
1.74
0.85
3.2
For power-loss calculations only (TVJ=TVJM)
V
m
rT
VD=6V;
VD=6V;
TVJ=25oC
TVJ=-40oC
1.5
1.6
V
VGT
IGT
TVJ=25oC
100
200
mA
TVJ=-40oC
TVJ=TVJM;
TVJ=TVJM;
VD=2/3VDRM
VD=2/3VDRM
0.25
10
V
VGD
IGD
mA
TVJ=25oC; tp=30us; VD=6V
IG=0.45A; diG/dt=0.45A/us
TVJ=25oC; VD=6V; RGK=
TVJ=25oC; VD=1/2VDRM
IG=0.45A; diG/dt=0.45A/us
IL
IH
200
150
2
mA
mA
us
tgd
TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
typ.
185
us
tq
TVJ=TVJM; IT, IF=50A; -di/dt=6A/us
170
45
uC
A
QS
IRM
per thyristor/diode; DC current
per module
0.22
0.11
K/W
K/W
RthJC
RthJK
per thyristor/diode; DC current
per module
0.42
0.21
Creeping distance on surface
Creepage distance in air
12.7
9.6
50
mm
mm
m/s2
dS
dA
a
Maximum allowable acceleration
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Copper Base Plate with Inter-DCB
* Planar passivated chips
* Isolation voltage 3600 V~
* DC motor control
* Space and weight savings
* Softstart AC motor controller
* Light, heat and temperature
control
* Simple mounting with two screws
* Improved temperature and power
cycling
* Reduced protection circuits
SSAC100
Solid State AC Controller(Anti-Parallel Thyristor-Thyristor Modules)
3 x SSAC100
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 2 i2dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
10
1: IGT, TVJ = 125oC
2: IGT, TVJ
3: IGT, TVJ = -40oC
=
25oC
V
VG
3
2
6
1
5
1
4
4: PGAV = 0.5 W
5: PGM 5 W
6: PGM = 10 W
=
IGD, TVJ = 125oC
0.1
100
101
102
103
IG
104
mA
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 4 Gate trigger characteristics
1000
TVJ = 25oC
s
tgd
typ.
Limit
100
10
3 x SSAC100
1
10
mA
100
1000
IG
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 6 Gate trigger delay time
SSAC100
Solid State AC Controller(Anti-Parallel Thyristor-Thyristor Modules)
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
3 x SSAC100
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
RthJC for various conduction angles d:
d
RthJC (K/W)
DC
0.22
0.23
0.25
0.27
0.28
180oC
120oC
60oC
30oC
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
0.0066
0.0678
0.1456
0.0019
0.0477
0.344
Fig. 9 Transient thermal impedance
junction toheatsink(perthyristor
or diode)
RthJK for various conduction angles d:
d
RthJK (K/W)
DC
0.42
0.43
0.45
0.47
0.48
180oC
120oC
60oC
30oC
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.0066
0.0678
0.1456
0.2
0.0019
0.0477
0.344
1.32
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