STD/SDT181GK08 [SIRECTIFIER]
晶闸管（可控硅）Thyristors (SCRs)，晶闸管/二极管模块Thyristor-Diode Modules。; 晶闸管（可控硅）晶闸管（SCR ） ，晶闸管/二极管模块晶闸管，二极管模块。
| 型号： | STD/SDT181GK08 |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 晶闸管（可控硅）Thyristors (SCRs)，晶闸管/二极管模块Thyristor-Diode Modules。 |
| 文件： | 总4页 (文件大小：483K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD/SDT165
Thyristor-Diode Modules, Diode-Thyristor Modules
Dimensions in mm (1mm=0.0394")
Type
VRSM
VDSM
V
VRRM
VDRM
V
STD/SDT165GK08 900
STD/SDT165GK12 1300
STD/SDT165GK14 1500
STD/SDT165GK16 1700
STD/SDT165GK18 1900
STD/SDT165GK20 2100
STD/SDT165GK22 2300
800
1200
1400
1600
1800
2000
2200
Symbol
Test Conditions
Maximum Ratings
Unit
I
I
TRMS, IFRMS TVJ=TVJM
300
165
A
TAVM, IFAVM TC=85oC; 180o sine
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
6000
6400
5250
5600
ITSM, IFSM
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
180000
170000
137000
128000
VR=0
i2dt
A2s
TVJ=TVJM
VR=0
150
TVJ=TVJM
f=50Hz, tp=200us
(di/dt)cr VD=2/3VDRM
IG=0.5A
repetitive, IT=500A
A/us
500
non repetitive, IT=ITAVM
VDR=2/3VDRM
diG/dt=0.5A/us
TVJ=TVJM;
RGK= ; method 1 (linear voltage rise)
1000
V/us
W
(dv/dt)cr
TVJ=TVJM
PGM
tp=30us
tp=500us
120
60
IT=ITAVM
8
W
V
PGAV
VRGM
10
-40...+125
125
-40...+125
TVJ
TVJM
Tstg
oC
50/60Hz, RMS
IISOL<1mA
t=1min
t=1s
3000
3600
VISOL
V~
_
Mounting torque (M6)
Terminal connection torque (M6)
2.25-2.75/20-25
4.5-5.5/40-48
Nm/lb.in.
g
Md
Typical including screws
Weight
125
STD/SDT165
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
Characteristic Values
Unit
TVJ=TVJM; VR=VRRM; VD=VDRM
IT, IF=300A; TVJ=25oC
40
1.36
0.8
mA
V
IRRM, IDRM
VT, VF
VTO
For power-loss calculations only (TVJ=TVJM)
V
1.6
m
rT
VD=6V;
VD=6V;
TVJ=25oC
TVJ=-40oC
2
2.6
V
VGT
IGT
TVJ=25oC
150
200
mA
TVJ=-40oC
TVJ=TVJM;
TVJ=TVJM;
VD=2/3VDRM
VD=2/3VDRM
0.25
10
V
VGD
IGD
mA
TVJ=25oC; tp=30us; VD=6V
IG=0.45A; diG/dt=0.45A/us
TVJ=25oC; VD=6V; RGK=
TVJ=25oC; VD=1/2VDRM
IG=0.5A; diG/dt=0.5A/us
IL
IH
200
150
2
mA
mA
us
tgd
TVJ=TVJM; IT=160A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
typ.
150
us
tq
TVJ=TVJM; IT, IF=300A; -di/dt=50A/us
550
235
uC
A
QS
IRM
per thyristor/diode; DC current
per module
0.155
0.0775
K/W
K/W
RthJC
RthJK
per thyristor/diode; DC current
per module
0.225
0.1125
Creeping distance on surface
Creepage distance in air
12.7
9.6
50
mm
mm
m/s2
dS
dA
a
Maximum allowable acceleration
FEATURES
APPLICATIONS
* Motor control
* Power converter
ADVANTAGES
* Space and weight savings
* Simple mounting
* International standard package
* Copper
base plate
* Heat and temperature control for
industrial furnaces and chemical
processes
* Improved temperature and power
cycling
* Reduced protection circuits
* Planar passivated chips
* Isolation voltage 3600 V~
* Lighting control
* Contactless switches
STD/SDT165
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 2 i2t versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 4 Gate trigger characteristics
3 x STD/SDT165
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 6 Gate trigger delay time
STD/SDT165
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
3 x STD/SDT165
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
RthJC for various conduction angles d:
d
RthJC (K/W)
DC
0.155
0.167
0.175
0.197
0.226
180oC
120oC
60oC
30oC
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
0.0072
0.0188
0.129
0.001
0.08
0.2
Fig. 9 Transient thermal impedance
junction toheatsink(perthyristor
or diode)
RthJK for various conduction angles d:
d
RthJK (K/W)
DC
0.225
0.237
0.245
0.262
0.296
180oC
120oC
60oC
30oC
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.0072
0.0188
0.129
0.07
0.001
0.08
0.2
1.0
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