STD/SDT200GK12 [SIRECTIFIER]
晶闸管(可控硅)Thyristors (SCRs),晶闸管/二极管模块Thyristor-Diode Modules。; 晶闸管(可控硅)晶闸管(SCR ) ,晶闸管/二极管模块晶闸管,二极管模块。型号: | STD/SDT200GK12 |
厂家: | SIRECTIFIER SEMICONDUCTORS |
描述: | 晶闸管(可控硅)Thyristors (SCRs),晶闸管/二极管模块Thyristor-Diode Modules。 |
文件: | 总4页 (文件大小:276K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STD/SDT200
Thyristor-Diode Modules, Diode-Thyristor Modules
Dimensions in mm (1mm=0.0394")
Type
VRSM
VDSM
V
VRRM
VDRM
V
STD/SDT200GK08 900
STD/SDT200GK12 1300
STD/SDT200GK14 1500
STD/SDT200GK16 1700
STD/SDT200GK18 1900
800
1200
1400
1600
1800
Symbol
Test Conditions
Maximum Ratings
Unit
I
I
TRMS, IFRMS TVJ=TVJM
314
200
A
TAVM, IFAVM TC=85oC; 180o sine
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
8000
8500
7000
7600
ITSM, IFSM
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
38000
34000
30000
27000
VR=0
i2dt
A2s
TVJ=TVJM
VR=0
250
TVJ=TVJM
f=50Hz, tp=200us
(di/dt)cr VD=2/3VDRM
IG=1A
repetitive, IT=750A
800
A/us
non repetitive, IT=200A
VDR=2/3VDRM
diG/dt=1A/us
TVJ=TVJM;
RGK= ; method 1 (linear voltage rise)
1000
V/us
W
(dv/dt)cr
TVJ=TVJM
PGM
tp=30us
tp=500us
120
60
IT=ITAVM
20
10
W
V
PGAV
VRGM
-40...+130
125
-40...+130
TVJ
TVJM
Tstg
oC
50/60Hz, RMS
IISOL<1mA
t=1min
t=1s
3000
3600
VISOL
V~
_
Mounting torque (M5)
Terminal connection torque (M8)
2.5-5/22-44
12-15/106-132
Nm/lb.in.
g
Md
Typical including screws
Weight
320
STD/SDT200
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
Characteristic Values
Unit
TVJ=TVJM; VR=VRRM; VD=VDRM
70
40
mA
mA
V
IRRM
IDRM
VT, VF
VTO
IT, IF=600A; TVJ=25oC
For power-loss calculations only (TVJ=140oC)
1.50
0.95
1.0
V
m
rT
VD=6V;
TVJ=25oC
TVJ=-40oC
2
3
V
VGT
IGT
VD=6V;
TVJ=25oC
150
200
mA
TVJ=-40oC
TVJ=TVJM;
VD=2/3VDRM
0.25
10
V
VGD
IGD
mA
TVJ=25oC; tp=30us; VD=6V
IG=0.45A; diG/dt=0.45A/us
TVJ=25oC; VD=6V; RGK=
TVJ=25oC; VD=1/2VDRM
IG=1A; diG/dt=1A/us
IL
IH
300
150
2
mA
mA
us
tgd
TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=50V/us; VD=2/3VDRM
typ.
200
us
tq
TVJ=125oC; IT, IF=400A; -di/dt=50A/us
760
275
uC
A
QS
IRM
per thyristor/diode; DC current
per module
0.140
0.070
K/W
K/W
RthJC
RthJK
per thyristor/diode; DC current
per module
0.180
0.090
Creeping distance on surface
Strike distance through air
12.7
9.6
50
mm
mm
m/s2
dS
dA
a
Maximum allowable acceleration
FEATURES
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
ADVANTAGES
* International standard package
* Direct copper bonded Al2O3-ceramic
base plate
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
* Planar passivated chips
* Isolation voltage 3600 V~
* Lighting control
* Contactless switches
STD/SDT200
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 2 i2t versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 4 Gate trigger characteristics
3 x STD/SDT200
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 6 Gate trigger delay time
STD/SDT200
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
3 x STD/SDT200
0.15
K/W
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
30°
DC
ZthJC
RthJC for various conduction angles d:
0.10
0.05
.0
d
RthJC (K/W)
DC
0.129
0.131
0.131
0.132
0.132
180oC
120oC
60oC
30oC
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
0.0035
0.0165
0.1091
0.099
0.168
0.456
10-3
10-2
10-1
100
101
102
s
t
0.20
K/W
Fig. 9 Transient thermal impedance
junction toheatsink(perthyristor
or diode)
30°
DC
ZthJK
RthJK for various conduction angles d:
0.15
0.10
0.05
0
d
RthJK (K/W)
DC
0.169
0.171
0.172
0.172
0.173
180oC
120oC
60oC
30oC
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.0033
0.0159
0.1053
0.04
0.099
0.168
0.456
1.36
10-3
10-2
10-1
100
101
102
s
t
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