STOE30G12 [SIRECTIFIER]

High Efficiency Thyristor Discretes;
STOE30G12
型号: STOE30G12
厂家: SIRECTIFIER SEMICONDUCTORS    SIRECTIFIER SEMICONDUCTORS
描述:

High Efficiency Thyristor Discretes

文件: 总3页 (文件大小:440K)
中文:  中文翻译
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STOE30G06 thru STOE30G12  
High Efficiency Thyristor Discretes  
Dimensions TO-247AD  
Dim.  
Millimeter  
Min. Max. Min.  
Inches  
Max.  
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
A
K
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
A(TAB)  
G
A
G
K
E
F
4.32 5.49 0.170 0.216  
5.4  
6.2 0.212 0.244  
K=Cathode, A=Anode, G=Cate  
G
H
1.65 2.13 0.065 0.084  
-
4.5  
-
0.177  
VRRM  
VRSM  
J
K
1.0  
1.4 0.040 0.055  
V
V
10.8 11.0 0.426 0.433  
STOE30G06  
STOE30G08  
STOE30G10  
600  
800  
1000  
700  
900  
1100  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
N
1.5 2.49 0.087 0.102  
STOE30G12  
1200  
1300  
Symbol  
Test Conditions  
Maximum Ratings  
Unit  
I
I
TRMS  
TVJ=TVJM  
47  
30  
A
TC=120oC; 180o sine  
TAVM  
TVJ=45oC  
VR=0  
TVJ=TVJM  
VR=0  
t=10ms (50Hz), sine  
t=8.3ms (60Hz), sine  
t=10ms(50Hz), sine  
t=8.3ms(60Hz), sine  
300  
320  
270  
290  
ITSM  
A
TVJ=45oC  
VR=0  
TVJ=TVJM  
VR=0  
t=10ms (50Hz), sine  
t=8.3ms (60Hz), sine  
t=10ms(50Hz), sine  
t=8.3ms(60Hz), sine  
450  
440  
365  
355  
i2t  
A2s  
150  
TVJ=TVJM  
repetitive, IT=90A  
f=50Hz, tp=200us  
(di/dt)cr VD=2/3VDRM  
IG=0.3A  
A/us  
500  
non repetitive, IT=30A  
diG/dt=0.3A/us  
TVJ=TVJM;  
RGK= ; method 1 (linear voltage rise)  
VDR=2/3VDRM  
1000  
V/us  
W
(dv/dt)cr  
TVJ=TVJM  
PGM  
tp=30us  
tp=300us  
10  
5
IT=ITAVM  
0.5  
10  
W
V
PGAV  
VRGM  
-55...+150  
150  
-55...+150  
TVJ  
TVJM  
Tstg  
oC  
Md  
Fc  
Mounting torque (M3)  
Mounting force with clip  
0.8...1.2  
20...120  
Nm  
N
Weight  
6
g
typical  
P1  
©2012 SIRECTIFIER All rights reserved  
www.sirectifier.com  
STOE30G06 thru STOE30G12  
High Efficiency Thyristor Discretes  
Symbol  
Test Conditions  
Characteristic Values  
Unit  
TVJ=TVJM; VR=VRRM; VD=VDRM  
5
mA  
V
IR, ID  
VT  
IT=30A; TVJ=25oC  
For power-loss calculations only (TVJ=150oC)  
1.28  
0.86  
15  
V
VTO  
rT  
m
VD=6V;  
VD=6V;  
TVJ=25oC  
TVJ=-40oC  
1.3  
1.6  
V
VGT  
IGT  
TVJ=25oC  
TVJ=-40oC  
TVJ=125oC  
28  
50  
25  
mA  
TVJ=TVJM;  
VD=2/3VDRM  
0.2  
V
VGD  
IGD  
1
mA  
TVJ=25oC; tp=10us;  
IG=0.3A; diG/dt=0.3A/us  
TVJ=25oC; VD=6V; RGK=  
TVJ=25oC; VD=1/2VDRM  
IG=0.3A; diG/dt=0.3A/us  
IL  
IH  
90  
60  
2
mA  
mA  
us  
tgd  
0.50  
K/W  
RthJC  
DC current  
0.25  
K/W  
m/s2  
RthJH  
DC current  
Max. acceleration, 50 Hz  
50  
a
Product Marking  
Sirectifier  
Logo  
Part Number  
DateCode  
STOE30G12  
YYWW  
K
A
G
P2  
©2012 SIRECTIFIER All rights reserved  
www.sirectifier.com  
STOE30G06 thru STOE30G12  
High Efficiency Thyristor Discretes  
60  
50  
40  
30  
20  
10  
0
280  
240  
200  
160  
120  
80  
1000  
VR = 0 V  
80% V  
50 Hz,  
RRM  
TVJ  
=
5°C  
IT  
TVJ = 45°C  
I2t  
ITSM  
[A]  
[A]  
[A2s]  
100  
TVJ = 125°C  
TVJ = 125°C  
TVJ = 150°C  
125°C  
TVJ = 25°C  
1.0 1.5  
0.5  
2.0  
0.001  
0.01  
0.1  
t [s]  
Fig. 2 Surge overload current  
ITSM: crest value, t: duration  
1
1
2
3
7
4
8
5
19  
6
0
VT [V]  
t [ms]  
Fig. 3 I2t versus time (1-10 s)  
Fig. 1 Forward characteristics  
IGD: TVJ = 125°C  
102  
101  
100  
10-1  
80  
60  
40  
20  
0
4
3
2
1
0
dc =  
1
0.5  
0.4  
0.33  
0.17  
0.08  
TVJ = 125°C  
VG  
[V]  
ITAVM  
[A]  
tgd  
[μs]  
lim.  
typ.  
IGD: VJ = 25°C  
10-2  
10-1  
100  
101  
0
40  
80  
120  
1
6
0
0
25  
50  
IG [mA]  
75  
IG [A]  
Tcase [°C]  
Fig. 6 Max. forward current at  
case temperature  
Fig. 5 Gate controlled delay time tgd  
Fig. 4 Gate voltage & gate current  
Triggering: A = no; B = possible; C = safe  
60  
50  
40  
0.6  
dc =  
1
RthHA  
0.6  
0.8  
1.0  
2.0  
4.0  
8.0  
0.5  
0.5  
0.4  
0.33  
0.17  
0.08  
0.4  
0.3  
P(AV)  
30  
[W]  
i
Rthi (K/W)  
ti (s)  
[K/W]  
1
2
3
4
5
0.08  
0.06  
0.2  
0.05  
0.11  
0.01  
0.001  
0.02  
0.2  
20  
10  
0
0.2  
0.1  
0.0  
0.11  
0
10  
20  
30  
40  
1
10  
100  
[ms]  
1000  
10000  
0
25 50 75 100 125 150  
IF(AV) [A]  
Tamb [°C]  
Fig. 7 Transient thermal impedance junction to case  
Fig. 7a Power dissipation versus direct output current  
Fig. 7b and ambient temperature  
P3  
©2012 SIRECTIFIER All rights reserved  
www.sirectifier.com  

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