STT800GK18PT [SIRECTIFIER]
Thyristor-Thyristor Modules; 可控硅晶闸管模块
| 型号： | STT800GK18PT |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | Thyristor-Thyristor Modules |
| 文件： | 总4页 (文件大小：1570K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STT800GKXXPT
Thyristor-Thyristor Modules
Colerance:+0.5mm
-
Dimensions in mm (1mm=0.0394")
Type
VRSM
VDSM
V
VRRM
VDRM
V
STT800GK08PT
900
800
STT800GK12PT 1300
STT800GK14PT 1500
STT800GK16PT 1700
STT800GK18PT 1900
1200
1400
1600
1800
Symbol
Test Conditions
mum Rtings
Unit
A
TC=85oC; 180o half sine wave,50HZ
ITAV
80
TC=85oC; 180o Full cycle sine wave,50HZ
A
1256
ITRMS
180o half sine wave,50HZ single pulse;
TVJ=TVJM
30.0
35.0
4500
6125
ITSM
TC =25oC
VR=0;
A
2t
I
Gate pulse;20V,5W
1us rise time,500us
TVJ=TVJM
TC =25oC
VDRM,
VRRM
TVJ=TVJM
1000/1800
180o half sine wave,50HZ ;Gate open
A2s
TVJ=TVJM
VDSM,
VRSM
1100/1900
100
180o half sine wave,50HZ ;single pulseGate open
TVJ=TVJM
repetiti=90A
f=50Hz, tp=200us
(di/dt)cr VD=2/3VDRM
IG=1A
A/us
V/us
200
non repetive, T=ITAVM
VD=2/3VDRM
diG/dt=1A/us
TVJ=TVJM;
RGK= ; ethod 1 (lear voltae rise)
1000
(dv/dt)cr
PGM
TVJ=TVJM
40
6
W
W
TVJ=VJM
TVJ=TVJM
PGAV
5
V
VRGM
-40...+140
140
-40...+125
TVJ
TVJM
Tstg
oC
50/60Hz, RMS
IISOL<1mA
t=1min
t=1s
3000
3600
VISOL
V~
_
Mounting torque (M6)
Terminal connection torque (M8)
4.5-7/40-60
11-13/97-115
Nm/lb.in.
g
Md
Typ.
Weight
3249
P1 ©2009 Sirectifier Electronics Technology Corp.
www.sirectifier.com
STT800GKXXPT
Thyristor-Thyristor Modules
Test Conditions
Symbol
Characteristic Values
Unit
TVJ=TVJM; VR=VRRM
IT=1200A; TVJ=25oC
70
1.55
0.9
mA
V
IRRM
VT
For power-loss calculations only (TVJ=TVJM)
V
VTO
rT
0.21
m
VD=12V;
VD=12V;
TVJ=25oC
TVJ=-40oC
2.5
3.5
V
VGT
IGT
TVJ=25oC
300
400
mA
TVJ=-40oC
TVJ=TVJM;
TVJ=TVJM;
VD=2/3VDRM
VD=2/3VDRM
0.5
10
V
VGD
IGD
mA
TVJ=25oC; tp=30us; VD=12V
IG=1A; diG/dt=1A/us
TVJ=25oC; VD=6V; RGK=
TVJ=25oC; VD=1/2VDRM
IG=1A; diG/dt=1A/us
IL
IH
1000
500
10
mA
mA
us
tgd
TVJ=TVJM; IT=500A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=50V/us; VD=2/3VDRM
typ.
200
us
tq
DC current
0.0405
0.01
K/W
K/W
mm
RthJC
RthJK
dS
DC current
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
12.7
9.6
mm
m/s2
dA
59.81
a
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Copper base plate
* Motor control, softstarter
* Power converter
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
* Pressure Contact Technology
* Isolation voltage 3600 V~
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Solid state switches
* UL file NO.310749
* RoHs compliance
P2 ©2009 Sirectifier Electronics Technology Corp.
www.sirectifier.com
STT800GKXXPT
Thyristor-Thyristor Modules
o
.
Tj=25oC Tj=Tjmax
1200
=180
o
o
.
10000
=120
o
o
o
.
=90
=60
=30
o
1000
.
o
o
.
o
8000
6000
4000
800
600
400
2000
0
200
.
-angle of conduction
sinusoidal current wavefors
o
0
50 60
70
80 90
00 110 120 130
0
0.5
1
1.5
2
2.5
3
.
Carature- OC
.
Forward Voltage- V
V
F
Fig 2 Mean on-
vs. Case terature T
AV
C
Fig 1 On-state characteristics
z
for sinoidal current worms at diffent conduction angles,f=50H
DC
o
.
=180
=120
=90
=60
o
1500
1000
o
.
3000
2500
=30
60
o
o
.
o
o
o
o
.
o
.
o
o
.
o
.
=1
=180
o
o
.
o
=30
.
o
200
1500
0
500
0
500
0
.
-angle of conduction
Rectangular current waveforms
o
.
-angle of conduction
sinusoidal current waveforms
o
50 60
70
80 90
100 110 20 130
C
0
200
400
600
800
T(AV)
1000 1200
Case temperature- T O
.
.
Mean on-state current-I
A
Fig 4 Mean on-state power dissipation PTAV vs. Mean on-state current ITAV
Fig 3 Mean on-state I
Case temperaT
C
TAV
for sinusoidal current waveforms at different conduction angles,f=50Hz
for rectangular current waveforms at different conductiongles and for DC,
f=50H
z
o
.
=30
=60
=9
o
.
o
3500
3000
.
o
.
=12
=180
o
.
o
DC
2500
2000
1500
1000
500
0
.
-angle of conduction
Rectangular current waveforms
o
0
200
400
600
800
1000 1200
A
.
Mean on-state current-I
T(AV)
Fig 5 Mean on-state power dissipation PTAV vs. Mean on-state current I
TAV
for rectangular current waveforms at different conduction angles and for DC,
f=50Hz
P3 ©2009 Sirectifier Electronics Technology Corp.
www.sirectifier.com
STT800GKXXPT
Thyristor-Thyristor Modules
8
0.045
0.04
UFGM ,B
7
6
5
4
0.035
0.03
4
0.025
0.02
3
2
3
0.015
0.01
1
2
1
0
0.005
0
10-3
10-2
10-1
100
101
102
103
0
1
2
3
4
6
7
8
9
10
.
Time- t s
IFGM ,A
Fig 6 Transient thermal impedance junction to case Z
per arm for DC
Fig 7 Gatacteristic
thjc
P4 ©2009 Sirectifier Electronics Technology Corp.
www.sirectifier.com
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