STYN1665 [SIRECTIFIER]
Thyristor Discretes (SCRs);
| 型号： | STYN1665 |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | Thyristor Discretes (SCRs) |
| 文件： | 总3页 (文件大小：374K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STYN265 thru STYN1865
Thyristor Discretes (SCRs)
Dimensions TO-247AD
A
G
K
K=Cathode, A=Anode, G=Cate
VRRM
V
VRSM
V
STYN265
STYN665
200
600
300
700
STYN865
STYN1065
STYN1265
800
1000
1200
900
1100
1300
STYN1665
STYN1865
1600
1800
1700
1900
Symbol
Test Conditions
Maximum Ratings
Unit
A
STYN265~865 / STYN1065~1865
ITRMS
TVJ=TVJM
65
41
ITAVM
TC=85oC; 180o sine
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
520
560
460
500
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
ITSM
A
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
1350
1300
1050
1030
i2t
A2s
150
TVJ=TVJM
repetitive, IT=65A
f=50Hz, tp=200us
(di/dt)cr VD=2/3VDRM
IG=0.15A
A/us
500
non repetitive, IT=ITAVM
VDR=2/3VDRM
diG/dt=0.15A/us
TVJ=TVJM;
RGK= ; method 1 (linear voltage rise)
(dv/dt)cr
1000
V/us
W
TVJ=TVJM
PGM
tp=30us
tp=300us
10
5
IT=ITAVM
0.5
10
W
V
PGAV
VRGM
-40...+140
140
-40...+125
TVJ
TVJM
Tstg
oC
Md
Fc
Mounting torque (M3)
Mounting force with clip
0.8...1.2
20...120
Nm
N
typical
Weight
6
g
P1
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com
STYN265 thru STYN1865
Thyristor Discretes (SCRs)
Characteristic Values
Symbol
Test Conditions
Unit
STYN265~865 STYN1065~1865
TVJ=TVJM; VR=VRRM; VD=VDRM
5
mA
V
IR, ID
VT
IT=65A; TVJ=25oC
For power-loss calculations only (TVJ=125oC)
1.60
1.50
0.85
11
V
VTO
rT
m
VD=6V;
TVJ=25oC
TVJ=-40oC
TVJ=25oC
TVJ=-40oC
1.5
1.6
V
VGT
IGT
VD=6V;
100
200
mA
TVJ=TVJM;
VD=2/3VDRM
0.2
10
V
VGD
IGD
mA
TVJ=25oC; tp=10us;
IG=0.3A; diG/dt=0.3A/us
TVJ=25oC; VD=6V; RGK=
IL
IH
mA
mA
us
150
100
2
TVJ=25oC; VD=1/2VDRM
IG=0.3A; diG/dt=0.3A/us
tgd
0.62
K/W
RthJC
DC current
typ.
0.82
50
K/W
m/s2
RthJH
DC current
Max. acceleration, 50 Hz
a
10
1000
1:
2:
3:
I
I
I
,
,
,
T
T
T
= 125°C
G T
G T
G T
VJ
VJ
VJ
T
= 25°C
VJ
=
=
25°C
V
-40°C
s
V
G
t
gd
typ.
Limit
100
6
1
5
3
2
1
4
10
4:
5:
6:
P
P
P
= 0.5
W
W
G AV
GM
=
5
I
,
T
=125°C
10
G D VJ
=
10
W
GM
0.1
1
1
100
1000
mA 10000
10
100
1000
mA
IG
IG
F ig. 1 Gate trigger range
F ig. 2 Gate controlled delay time tgd
P2
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com
STYN265 thru STYN1865
Thyristor Discretes (SCRs)
100
400
A
2000
50Hz, 80%V
V
= 0 V
R
R R M
A
2
A
s
I
TS M
80
I
T
300
200
100
T
= 45°C
VJ
T
= 45°C
VJ
2
I
t
60
40
20
1000
T
= 125°C
VJ
T
= 125°C
VJ
T
= 125°C
VJ
T
= 25°C
VJ
500
0
0
0.0
0.5
1.0
1.5
2.0
0.001
0.01
0.1
s
1
1
2
3
ms
8 9
V
4
5
6
7
V
T
t
t
2
Fig. 4 S urge overload current
I
Fig. 3 Forward characteristics
Fig. 5 I t versus time (1-10 ms)
: crest value, t: duration
T S M
140
W
80
A
DC
70
60
50
40
30
20
10
180° sin
120°
60°
120
I
R
:
T(AV)M
thK A
P
T
0.1 K/W
0.5 K/W
30°
100
80
60
40
20
0
1
2
4
K/W
K/W
K/W
10 K/W
DC
180° sin
120°
60°
30°
0
0
10
20
30
40
50
60
70
0
25
50
75
100
125
°C 150
A
°C
0
20
40
60
80
100
T
120
I
T
amb
T(AV)M
case
Fig. 6 P ower dissipation versus forward current and ambient temperature
Fig. 7 Max. forward current at case
temperature
1.0
R
for various conduction angles d:
thJC
K/W
d
R
(K/W)
thJC
30°
60°
120°
180°
DC
Z
thJC
DC
0.62
180
120
60
30
0.71
0.748
0.793
0.817
0.5
Constants for
Z
calculation:
thJC
i
R
(K/W)
t (s)
i
thi
1
2
3
0.206
0.362
0.052
0.013
0.118
1.488
0.0
0.001
0.01
0.1
1
10
s
100
t
Fig. 8 Transient thermal impedance junction to case
P3
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com
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