STYN425S [SIRECTIFIER]
晶闸管（可控硅）Thyristor (SCRs)，分立式单向可控硅Discrete Thyristors (SCRs)。; 晶闸管（可控硅）晶闸管（可控硅） ，分立式单向可控硅分立晶闸管（SCR ） 。
| 型号： | STYN425S |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 晶闸管（可控硅）Thyristor (SCRs)，分立式单向可控硅Discrete Thyristors (SCRs)。 |
| 文件： | 总2页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STYN225(S) thru STYN1025(S)
Discrete Thyristors(SCRs)
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
Dimensions TO-220AB
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
12.70 13.97
14.73 16.00
9.91 10.66
G
A
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
4.08
6.85
3.18
1.65
5.84
1.01
BSC
4.82
1.39
0.56
2.79
K
A
K
0.100
BSC
G
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Dimensions TO-263(D2PAK)
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
A
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
G
D
D1
8.64
8.00
9.65
8.89
.340
.315
.380
.350
K
E
E1
e
9.65
6.22
2.54 BSC
10.29
8.13
.380 .405
.245 .320
.100 BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
.575
.090
.040
.050
0
.625
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
L1
L2
L3
L4
.110
.055
.070
.008
R
0.46
0.74
.018
.029
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
25
Unit
I
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
C
Tc = 100°
T(RMS)
A
A
IT
(AV)
Tc = 100°C
Tj = 25°C
16
I
Non repetitive surge peak on-state
current
tp = 8.3 ms
tp = 10 ms
314
300
450
TSM
A
²
²
2
tp = 10 ms
F = 60 Hz
tp = 20 µs
Tj = 25°C
A
S
I t
I t Value for fusing
Critical rate of rise of on-state current
dI/dt
Tj = 125°C
50
A/µs
I
= 2 x I , tr £ 100 ns
G
GT
I
Peak gate current
Tj = 125°C
Tj = 125°C
4
1
A
GM
P
Average gate power dissipation
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
V
Tj
V
Maximum peak reverse gate voltage (for TN8 & TYN only)
RGM
5
STYN225(S) thru STYN1025(S)
Discrete Thyristors(SCRs)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■
STANDARD
Symbol
Test Conditions
TYNx08(S)
Unit
I
MIN.
MAX.
MAX.
MIN.
4
mA
GT
V = 12 V
R = 33 W
40
1.3
D
L
V
V
V
V
GT
Tj = 125°C
V = V
R = 3.3 kW
0.2
50
GD
D
DRM
L
I = 500mA Gate open
MAX.
MAX.
mA
mA
I
T
H
I
I = 1.2 I
G GT
90
1000
1.6
0.77
14
L
V = 67 % V
Gate open
= 16 A tp = 380 µs
TM
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN.
MAX.
MAX.
MAX.
MAX.
V/µs
V
dV/dt
D
DRM
V
I
TM
V
V
Threshold voltage
t0
R
d
mW
Dynamic resistance
I
I
5
µA
DRM
RRM
V
= V
RRM
DRM
mA
4
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R
R
Junction to case (DC)
Junction to ambient (DC)
°C/W
°C/W
1.0
60
th(j-c)
TO-220AB
TO-263
th(j-a)
²
45
S = 1.0 cm
S= copper surface under tab
PRODUCT SELECTOR
Voltage (xxx)
Package
Part Number
Sensitivity
200~~1000
200~~1000
STYNx25S
40 mA
TO-263
mA
40
TO-220AB
S TYNx25
OTHER INFORMATION
Part Number
Marking
Weight
0.5 g
Base Quantity
Packing mode
Tube
50
STYN x25S
STYN x25S
S TYN x25
S TYN x25
2.3 g
250
B ulk
Note: x = voltage
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