STYNX08S [SIRECTIFIER]

Thyristor Discretes(SCRs);
STYNX08S
型号: STYNX08S
厂家: SIRECTIFIER SEMICONDUCTORS    SIRECTIFIER SEMICONDUCTORS
描述:

Thyristor Discretes(SCRs)

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STYN208(S) thru STYN1008(S)  
Thyristor Discretes(SCRs)  
Dimensions TO-220AB  
REF.  
A
K
G
Dimensions TO-263(D2PAK)  
Millimeters  
Inches  
REF.  
A
Min.  
Typ. Max. Min.  
Typ. Max.  
E
C2  
A
A1  
A2  
B
4.30  
2.49  
0.03  
0.70  
1.25  
0.45  
1.21  
8.95  
10.00  
4.88  
15.00  
1.27  
1.40  
4.60 0.169  
2.69 0.098  
0.23 0.001  
0.93 0.027  
0.181  
0.106  
0.009  
0.037  
L2  
D
L
B2  
C
1.40  
0.048 0.055  
L3  
0.60 0.017  
1.36 0.047  
9.35 0.352  
10.28 0.393  
5.28 0.192  
15.85 0.590  
1.40 0.050  
1.75 0.055  
0.024  
0.054  
0.368  
0.405  
0.208  
0.624  
0.055  
0.069  
0.016  
8°  
A1  
C2  
D
B2  
B
R
C
E
G
G
L
A2  
2mm min.  
FLAT ZONE  
L2  
L3  
R
0.40  
V2  
V2  
0°  
8°  
0°  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
RMS on-state current (180° conduction angle)  
Average on-state current (180° conduction angle)  
Value  
Unit  
I
C
T(RMS)  
Tc = 110°  
8
5
A
A
IT  
(AV)  
Tc = 110°C  
Tj = 25°C  
I
Non repetitive surge peak on-state  
current  
tp = 8.3 ms  
tp = 10 ms  
100  
95  
TSM  
A
²
²
2
tp = 10 ms  
F = 60 Hz  
tp = 20 µs  
Tj = 25°C  
A
S
45  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
Tj = 125°C  
50  
A/µs  
I
= 2 x I , tr £ 100 ns  
G
GT  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
V
Tj  
V
Maximum peak reverse gate voltage  
RGM  
5
P1  
©2008 SIRECTIFIER All rights reserved,  
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com  
www.sirectifier.com  
STYN208(S) thru STYN1008(S)  
Thyristor Discretes(SCRs)  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
STANDARD  
Symbol  
Test Conditions  
Unit  
mA  
Value  
2
I
MIN.  
MAX.  
MAX.  
MIN.  
GT  
V = 12 V  
R = 33 W  
15  
D
L
V
V
1.3  
V
V
GT  
Tj = 125°C  
V = V  
R = 3.3 kW  
0.2  
30  
GD  
D
DRM  
L
I = 100 mA Gate open  
MAX.  
MAX.  
mA  
mA  
I
T
H
I
I = 1.2 I  
G GT  
70  
150  
1.6  
0.85  
46  
L
V = 67 % V  
Gate open  
= 16 A tp = 380 µs  
TM  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
MIN.  
MAX.  
MAX.  
MAX.  
MAX.  
V/µs  
V
dV/dt  
D
DRM  
V
I
TM  
V
V
Threshold voltage  
t0  
R
d
mΩ  
Dynamic resistance  
I
I
5
µA  
DRM  
RRM  
V
= V  
RRM  
DRM  
mA  
2
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
R
R
Junction to case (DC)  
Junction to ambient (DC)  
°C/W  
°C/W  
2.0  
th(j-c)  
60  
TO-220AB  
TO-263  
th(j-a)  
²
70  
S = 0.5 cm  
S= copper surface under tab  
PRODUCT SELECTOR  
Voltage (xxx)  
Package  
Part Number  
Sensitivity  
200~~1000  
200~~1000  
15 mA  
15 mA  
TO-263  
STYNX08S  
STYNX08  
TO-220AB  
OTHER INFORMATION  
Part Number  
Marking  
Weight  
1.50 g  
1.90 g  
Base Quantity  
Packing mode  
50  
50  
Tube  
Tube  
STYNX08S  
STYNX08  
STYNX08S  
STYNX08  
Note: x = voltage  
P2  
©2008 SIRECTIFIER All rights reserved,  
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com  
www.sirectifier.com  

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