SUR20100CT [SIRECTIFIER]
快速恢复二极管Fast Recovery Diodes，软恢复特性超快恢复外延二极管Soft Recovery Behaviour Ultra Fast Recovery，Epitaxial Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。; 快速恢复二极管快恢复二极管，软恢复特性超快恢复外延二极管的软恢复行为超快恢复外延二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。
| 型号： | SUR20100CT |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 快速恢复二极管Fast Recovery Diodes，软恢复特性超快恢复外延二极管Soft Recovery Behaviour Ultra Fast Recovery，Epitaxial Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。 |
| 文件： | 总3页 (文件大小：318K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUR20100CT
Ultra Fast Recovery Epitaxial Diodes
Dimensions TO-220AB
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
C
A
A
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
12.70 13.97
14.73 16.00
9.91 10.66
C
C(TAB)
A
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
4.08
6.85
3.18
1.65
5.84
1.01
BSC
4.82
1.39
0.56
2.79
A=Anode, C=Cathode, TAB=Cathode
0.100
BSC
VRSM
V
VRRM
V
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
SUR20100CT
1000
1000
Symbol
Test Conditions
Maximum Ratings
Unit
TVJ=TVJM
25
10
150
IFRMS
IFAVM
IFRM
TC=100oC; rectangular, d=0.5
A
A
tp<10us; rep. rating, pulse width limited by TVJM
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
75
80
65
70
IFSM
TVJ=150oC
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
28
27
21
20
I2t
A2s
oC
TVJ=150oC
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Ptot
Md
TC=25oC
78
0.4...0.6
2
W
Nm
g
Mounting torque
Weight
SUR20100CT
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
Characteristic Values
Unit
typ.
max.
TVJ=25oC; VR=VRRM
250
150
4
uA
uA
mA
IR
o
.
TVJ=25 C; VR=0.8 VRRM
o
.
TVJ=125 C; VR=0.8 VRRM
IF=12A; TVJ=150oC
2.1
2.7
V
VF
TVJ=25oC
For power-loss calculations only
1.67
33.6
1.6
V
VTO
rT
m
TVJ=TVJM
RthJC
RthCK
RthJA
0.5
K/W
60
60
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC
_
VR=540V; IF=10A; -diF/dt=100A/us; L<0.05uH; TVJ=100 C
50
ns
A
trr
o
6.5
7.2
IRM
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
JEDEC TO-220AB
* Antiparallel diode for high frequency
switching devices
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
* Soft recovery behaviour
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
SUR20100CT
Ultra Fast Recovery Epitaxial Diodes
Fig. 1 Forward current
versus voltage drop.
Fig. 2 R ecovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 R ecovery time versus -diF/dt.
Fig. 6 Peak forward voltage
versus diF/dt.
Fig. 7 Transient thermal impedance junction to case.
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