SUR6020 [SIRECTIFIER]

快速恢复二极管Fast Recovery Diodes，软恢复特性超快恢复外延二极管Soft Recovery Behaviour Ultra Fast Recovery，Epitaxial Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。; 快速恢复二极管快恢复二极管，软恢复特性超快恢复外延二极管的软恢复行为超快恢复外延二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。


型号：	SUR6020
厂家：	SIRECTIFIER SEMICONDUCTORS
描述：	快速恢复二极管Fast Recovery Diodes，软恢复特性超快恢复外延二极管Soft Recovery Behaviour Ultra Fast Recovery，Epitaxial Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。快速恢复二极管快恢复二极管，软恢复特性超快恢复外延二极管的软恢复行为超快恢复外延二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。二极管快恢复二极管快速恢复二极管
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SUR6020

Ultra Fast Recovery Epitaxial Diodes

Dim.

Millimeter

Min. Max. Min.

Inches

Max.

Dimensions TO-247AC

19.81 20.32 0.780 0.800

20.80 21.46 0.819 0.845

C(TAB)

15.75 16.26 0.610 0.640

3.55 3.65 0.140 0.144

4.32 5.49 0.170 0.216

5.4

6.2 0.212 0.244

1.65 2.13 0.065 0.084

4.5

0.177

A=Anode, C=Cathode, TAB=Cathode

1.0

1.4 0.040 0.055

10.8 11.0 0.426 0.433

VRSM

VRRM

4.7

0.4

5.3 0.185 0.209

0.8 0.016 0.031

SUR6020

200

1.5 2.49 0.087 0.102

Symbol

Test Conditions

Maximum Ratings

Unit

TVJ=TVJM

800

IFRMS

IFAVM

IFRM

TC=85^oC; rectangular, d=0.5

tp<10us; rep. rating, pulse width limited by TVJM

TVJ=45^oC

t=10ms (50Hz), sine

t=8.3ms (60Hz), sine

t=10ms(50Hz), sine

t=8.3ms(60Hz), sine

600

650

540

580

IFSM

TVJ=150^oC

TVJ=45^oC

t=10ms (50Hz), sine

t=8.3ms (60Hz), sine

t=10ms(50Hz), sine

t=8.3ms(60Hz), sine

1800

1770

1460

1410

I²t

A²s

^oC

TVJ=150^oC

-40...+150

150

-40...+150

TVJ

TVJM

Tstg

Ptot

TC=25^oC

150

0.8...1.2

Mounting torque

Weight

SUR6020

Ultra Fast Recovery Epitaxial Diodes

Symbol

Test Conditions

Characteristic Values

Unit

typ.

max.

TVJ=25^oC; VR=VRRM

TVJ=25 C; VR=0.8 VRRM

TVJ=125 C; VR=0.8 VRRM

IF=60A; TVJ=150^oC

0.88

1.08

TVJ=25^oC

For power-loss calculations only

0.70

4.0

VTO

TVJ=TVJM

RthJC

RthCK

RthJA

0.75

0.25

K/W

IF=1A; -di/dt=200A/us; VR=30V; TVJ=25^oC

VR=100V; IF=60A; -diF/dt=200A/us; L<0.05uH; TVJ=100 C

trr

IRM

FEATURES

APPLICATIONS

ADVANTAGES

* International standard package

JEDEC TO-247AC

* Antiparallel diode for high frequency

switching devices

* High reliability circuit operation

* Low voltage peaks for reduced

protection circuits

* Planar passivatd chips

* Very short recovery time

* Extremely low switching losses

* Low IRM-values

* Antisaturation diode

* Snubber diode

* Free wheeling diode in converters

and motor control circuits

* Rectifiers in switch mode power

supplies (SMPS)

* Low noise switching

* Low losses

* Operating at lower temperature or

space saving by reduced cooling

* Soft recovery behaviour

* Inductive heating and melting

* Uninterruptible power supplies (UPS)

* Ultrasonic cleaners and welders

SUR6020

Ultra Fast Recovery Epitaxial Diodes

160

140

0.8

T_VJ= 100°C

V_R= 100V

T_VJ= 100°C

V_R= 100V

Q_r

I_{R M}

120

100

0.6

I_F

I_F= 35A

I_F= 70A

I_F=140A

I_F= 35A

I_F= 70A

I_F=140A

0.4

0.2

0.0

T_VJ=150°C

T_VJ=100°C

T_VJ=25°C

1.2 V

A/ s

-di_F/dt

0.0

0.4

0.8

100

1000

200 400 600 800 1000

A/ s

-di_F/dt

V_F

Fig. 1 Forward current I_Fversus V_F

Fig. 2 Typ. reverse recovery charge Q_r

versus -di_F/dt

Fig. 3 Typ. peak reverse current I_{R M}

versus -di_F/dt

1.6

2.5

T_VJ= 100°C

I_F= 100A

T_VJ= 100°C

V_R= 100V

1.4

K_f

2.0

V_FR

t_rr

t_fr

1.2

t_fr

V_FR

1.5

1.0

0.5

0.0

1.0

I_F=35A

I_F=70A

I_F=140A

0.8

I_{R M}

0.6

Q_r

0.4

0.2

A/ s

800

120 °C 160

T_VJ

200 400 600 800 1000

A/ s

200

400

600

di_F/dt

-di_F/dt

Fig. 4 Dynamic parameters Q_r, I_{R M}

versus T_VJ

Fig. 5 Typ. recovery time t_rr

versus -di_F/dt

Fig. 6 Typ peak forward voltage

V_FRand t_frversus di_F/dt

1.0

K/W

0.8

Z_thJC

0.6

0.4

0.2

0.0

DS E I 60-02

0.001

0.01

0.1

Fig. 7 Transient thermal impedance junction to case