BTA26 [SIRECT]
Discrete Triacs(Non-Isolated/Isolated); 离散双向可控硅（非隔离/隔离）
| 型号： | BTA26 |
| 厂家： | 
Sirectifier Global Corp. |
| 描述： | Discrete Triacs(Non-Isolated/Isolated) |
| 文件： | 总4页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTB/BTA26
Discrete Triacs(Non-Isolated/Isolated)
Dimensions TO-220AB
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
12.70 13.97
14.73 16.00
9.91 10.66
G
T2
T1
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
4.08
6.85
3.18
1.65
5.84
1.01
BSC
4.82
1.39
0.56
2.79
T2
G
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
T1
ABSOLUTE MAXIMUM RATINGS
Parameter
RMS on-state current (full sine wave)
Value
Unit
Symbol
I
T(RMS)
25
TO-220AB
A
Tc = 100°C
t = 16.7 ms
t = 20 ms
I
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 60 Hz
F = 50 Hz
A
260
250
TSM
²
²
²
tp = 10 ms
A s
I t
I t Value for fusing
340
50
Critical rate of rise of on-state current
dI/dt
/V
F = 120 Hz
tp = 10 ms
tp = 20 µs
Tj = 125°C
A/µs
V
_
, tr < 100 ns
GT
I
= 2 x I
G
V
/V
Non repetitive surge peak off-state
voltage
DRM RRM
V
Tj = 25°C
DSM RSM
+ 100
I
Peak gate current
Tj = 125°C
4
1
A
GM
P
Average gate p ower diss ipation
Tj = 125°C
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
T
j
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)
■
Symbol
Test Conditions
Quadrant
BTA/BTB
Unit
CW
35
BW
50
I
(1)
mA
I - II - III
I - II - III
I - II - III
MAX.
MAX.
GT
V
V = 12 V
R = 33
Ω
Ω
D
L
V
V
GT
1.3
0.2
V
V = V
R = 3.3 k
Tj = 125°C
GD
(2)
D
DRM
L
MIN.
MAX.
MAX.
I
I = 500 mA
50
70
80
75
80
mA
mA
H
T
I
I = 1.2 I
I - III
II
G
GT
L
100
dV/dt (2)
V
V
67 %
DRM
V/µs
=
gate open Tj = 125°C
Tj = 125°C
D
MIN.
MIN.
500
13
1000
22
(dI/dt)c (2) Without snubber
A/ms
BTB/BTA26
Discrete Triacs(Non-Isolated/Isolated)
■
STANDARD (4 Quadrants)
Symbol
(1)
Test Conditions
Quadrant
Value
Unit
I
I - II - III
IV
50
100
GT
MAX.
mA
Ω
V = 12 V
R = 33
D
L
V
V
GT
ALL
ALL
MAX.
MIN.
1.3
0.2
V
V
V = V
DRM
Ω
R = 3.3
Tj = 125°C
GD
(2)
D
L
I
I = 500 mA
MAX.
MAX.
H
80
70
mA
T
I
I = 1.2 I
I - III - IV
II
G
GT
L
mA
160
V = 67 % V
gate open Tj = 125°C
Tj = 125°C
MIN.
MIN.
V/µs
V/µs
D
DRM
dV/dt (2)
500
10
(dV/dt)c (2) (dI/dt)c =13.3A/ms
STATIC CHARACTERISTICS
Symbol
Test Conditions
Tj = 25°C
Value
Unit
I
= 35 A
tp = 380 µs
MAX.
1.55
V
V
V
(2)
(2)
TM
TM
V
Threshold voltage
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
0.85
16
5
MAX.
MAX.
to
R (2)
Dynamic resistance
mΩ
d
I
I
V
= V
RRM
µA
DRM
RRM
DRM
MAX.
3
mA
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R
Junction to case (AC)
Junction to ambient
°C/W
0.8
60
th(j-c)
R
°C/W
th(j-a)
PRODUCT SELECTOR
Part Number
Voltage (xxx)
Sensitivity
Type
Package
~~
200 V
1000 V
BTBV/BTA26
X
X
50 mA
Standard
TO-220AB
OTHER INFORMATION
Base
quantity
Packing
mode
Part Number
Marking
Weight
2.3 g
250
Bulk
BTB/BTA26
BTB/BTA26
BTB/BTA26
Discrete Triacs(Non-Isolated/Isolated)
Fig. 1: Maximum power dissipation versus R MS
on-state current (full cycle).
Fig. 2-1: R MS on-state current versus case
temperature (full cycle).
P
(W)
IT(R MS ) (A)
30
30
25
20
15
10
5
B TB /T25
25
20
15
10
5
B TA24
B TA25/26
IT(R MS ) (A)
10 15
Tc(°C)
0
0
0
25
50
75
100
125
0
5
20
25
Fig. 4:
values).
On-state characteristics (maximum
Fig. 3: R elative variation of thermal impedance
versus pulse duration.
ITM (A)
K =[Zth/R th]
1E +0
300
100
Zth(j-c)
Tj max
1E -1
Zth(j-a)
BTA/BTB24/T25
10
1
Tj=25°C
1E -2
Zth(j-a)
BTA26
Tj max.
Vto 0.8V5
R d 16 Ωm
=
=
tp (s )
1E +0
VTM (V)
2.5
1E -3
1E -3
1E -2
1E -1
1E +1
1E +2 5E +2
0.5
1.0
1.5
2.0
3.0
3.5
4.0
4.5
Fig. 5: S urge peak on-state current versus
number of cycles.
ITS M (A)
300
250
t=20ms
One cycle
Non repetitive
200
Tj initial=25°C
150
R epetitive
Tc=75°C
100
50
Number of yccles
0
1
10
100
1000
BTB/BTA26
Discrete Triacs(Non-Isolated/Isolated)
Fig. 6: Non-repetitive surge peak on-state
current for sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
Fig. 7: R elative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
a
IGT,IH,IL[Tj] / IG,TIH,IL [Tj=25°C]
2.5
ITS M (A),It² (As² )
3000
Tj initial=25°C
2.0
dI/dt limitation:
50A/µs
IGT
1000
1.5
IH & IL
ITS M
I²t
1.0
0.5
Tj(°C)
tp (ms )
0.0
100
0.01
-40 -20
0
20
40
60
80 100 120 140
0.10
1.00
10.00
Fig. 8: R elative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
Fig. 9: R elative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj s pecified]
(dI/dt)c [(dV/dt)c] / S pecified (dI/dt)c
2.4
6
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
5
4
3
2
1
0
BW/CW/T2535
B
0.6
Tj (°C)
(dV/dt)c (V/µs )
0.4
0.1
1.0
10.0
100.0
0
25
50
75
100
125
相关型号：
©2020 ICPDF网 联系我们和版权申明