BTB08 [SIRECT]
Discrete Triacs(Non-Isolated/Isolated); 离散双向可控硅（非隔离/隔离）
| 型号： | BTB08 |
| 厂家： | 
Sirectifier Global Corp. |
| 描述： | Discrete Triacs(Non-Isolated/Isolated) |
| 文件： | 总5页 (文件大小：338K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTB/BTA08
Discrete Triacs(Non-Isolated/Isolated)
Dimensions TO-220AB
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
12.70 13.97
14.73 16.00
9.91 10.66
G
T2
T1
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
4.08
6.85
3.18
1.65
5.84
1.01
BSC
4.82
1.39
0.56
2.79
T2
G
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
T1
ABSOLUTE MAXIMUM RATINGS
Parameter
RMS on-state current (full sine wave)
Value
Unit
Symbol
I
T(RMS)
8
TO-220AB
A
Tc = 110°C
t = 16.7 ms
t = 20 ms
I
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 60 Hz
F = 50 Hz
A
84
80
TSM
²
²
²
tp = 10 ms
A s
I t
I t Value for fusing
36
50
Critical rate of rise of on-state current
dI/dt
F = 120 Hz
tp = 20 µs
Tj = 125°C
A/µs
_
, tr < 100 ns
GT
I
= 2 x I
G
I
Peak gate current
Tj = 125°C
4
1
A
GM
P
Average gate p ower diss ipation
Tj = 125°C
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
T
j
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)
■
Symbol
Test Conditions
Quadrant
BTA/BTB
Unit
CW
35
BW
50
I
(1)
mA
I - II - III
I - II - III
I - II - III
MAX.
MAX.
GT
V
V = 12 V
R = 30
Ω
Ω
D
L
V
V
GT
1.3
0.2
V
V = V
R = 3.3 k
Tj = 125°C
GD
(2)
D
DRM
L
MIN.
MAX.
MAX.
I
I = 100 mA
35
50
60
50
70
80
mA
mA
H
T
I
I = 1.2 I
I - III
II
G
GT
L
dV/dt (2)
V
V
67 %
DRM
V/µs
=
gate open Tj = 125°C
Tj = 125°C
D
MIN.
MIN.
400
4.5
1000
7
(dI/dt)c (2) Without snubber
A/ms
BTB/BTA08
Discrete Triacs(Non-Isolated/Isolated)
■
STANDARD (4 Quadrants)
Symbol
(1)
Test Conditions
Quadrant
Value
Unit
I
I - II - III
IV
50
100
GT
MAX.
mA
Ω
V = 12 V
R = 30
D
L
V
V
GT
ALL
ALL
MAX.
MIN.
1.3
0.2
V
V
V = V
DRM
Ω
R = 3.3
Tj = 125°C
GD
(2)
D
L
I
I = 500 mA
MAX.
MAX.
H
50
50
mA
T
I
I = 1.2 I
I - III - IV
II
G
GT
L
mA
100
V = 67 % V
gate open Tj = 125°C
Tj = 125°C
MIN.
MIN.
V/µs
V/µs
D
DRM
dV/dt (2)
400
10
(dV/dt)c (2) (dI/dt)c =3.5 A/ms
STATIC CHARACTERISTICS
Symbol
Test Conditions
Tj = 25°C
Value
Unit
I
= 11 A
tp = 380 µs
MAX.
1.55
V
V
V
(2)
(2)
TM
TM
V
Threshold voltage
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
0.85
50
5
MAX.
MAX.
to
R (2)
Dynamic resistance
mΩ
d
I
I
V
= V
RRM
µA
DRM
RRM
DRM
MAX.
1
mA
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R
Junction to case (AC)
Junction to ambient
°C/W
1.6
60
th(j-c)
R
°C/W
th(j-a)
PRODUCT SELECTOR
Part Number
Voltage (xxx)
Sensitivity
Type
Package
~~
200 V
1000 V
BTB/BTA08
X
X
50 mA
Standard
TO-220AB
OTHER INFORMATION
Base
quantity
Packing
mode
Part Number
Marking
Weight
2.3 g
250
Bulk
BTB/BTA08
BTB/BTA08
BTB/BTA08
Discrete Triacs(Non-Isolated/Isolated)
Fig. 1: Maximum power dissipation versus R MS
Fig. 2-1: R MS on-state current versus case
on-state current (full cycle).
temperature (full cycle).
P (W)
IT(R MS ) (A)
10
9
10
9
BTB
8
8
7
7
BTA
6
6
5
5
4
4
3
3
2
1
0
2
IT(R MS )(A)
1
Tc(° C)
0
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
Fig. 2-2: R MS on-state current versus ambient
temperature (printed circuit board FR 4, copper
thickness: 35µm ),full cycle.
Fig. 3: R elative variation of thermal impedance
versus pulse duration.
IT(R MS ) (A)
3.5
K =[Zth/R th]
1E +0
Zth(j-c)
D2PAK
3.0
(S =1cm2
)
2.5
2.0
1.5
1.0
0.5
0.0
1E -1
DPAK
(S =0.5cm2
)
Zth(j-a)
1E -2
Tamb(° C)
50
tp(s )
1E +0
1E -3
1E -3
1E -2
1E -1
1E +1
1E +2 5E +2
0
25
75
100
125
Fig. 4: On-state characteristics (maximum
values).
Fig. 5: S urge peak on-state current versus
number of cycles.
ITM (A)
100
ITS M (A)
90
80
Tj=Tj max
Tj max.
Vto = 0.85 V
R d = 50 m
t=20ms
70
One cycle
60
Non repetitive
Tj initial=25° C
50
10
1
R epetitive
Tc=100° C
40
Tj=25° C
30
20
10
VTM(V)
Number of cycles
0
1
10
100
1000
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
BTB/BTA08
Discrete Triacs(Non-Isolated/Isolated)
Fig.
: 6Non-repetitive surge peak on-state
Fig. 7: R elative variation of gate trigger current,
current for
tp < 10ms, and corresponding value of I²t.
a
sinusoidal pulse with width
holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL[Tj] / IG,TIH,IL [Tj=25°C]
2.5
ITS M (A),I²t (As² )
1000
Tj initial=25°C
2.0
IGT
dI/dt limitation:
50A/µs
ITS M
1.5
100
IH & IL
1.0
I²t
0.5
tp (ms )
Tj(°C)
60
10
0.0
-40 -20
0.01
0.10
1.00
10.00
0
20
40
80 100 120 140
Fig. -82: R elative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). S tandard Types
Fig. : 9R elative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [(dV/dt)c] / S pecified (dI/dt)c
(dI/dt)c [Tj] / (dI/dt)c [Tj s pecified]
2.0
1.8
6
5
4
3
2
1
0
C
1.6
B
1.4
1.2
1.0
0.8
0.6
0.4
(dV/dt)c (V/µs )
1.0 10.0
Tj(°C)
50
0
25
75
100
125
0.1
100.0
2
Fig. 01: DPAK and D PAK Thermal resistance
junction to ambient versus copper surface under
tab (printed circuit board FR 4, copper thickness:
35 m).
R th(j-a) (°C/W)
100
90
80
70
60
50
DPAK
40
30
D²PAK
20
10
0
S (cm)²
0
4
8
12 16 20 24 28 32 36 40
BTB/BTA08
Discrete Triacs(Non-Isolated/Isolated)
Fig. 6: Non-repetitive surge peak on-state
current for sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
Fig. 7: R elative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
a
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25° C]
2.5
ITS M (A), I² t (A² s )
1000
Tj initial=25° C
2.0
IGT
dI/dt limitation:
50A/µs
ITS M
1.5
100
IH & IL
1.0
I² t
0.5
tp (ms )
Tj(° C)
60
10
0.0
-40 -20
0.01
0.10
1.00
10.00
0
20
40
80 100 120 140
Fig. 8-1: R elative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). S nubberless & Logic Level Types
Fig. 8-2: R elative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). S tandard Types
(dI/dt)c [(dV/dt)c] / S pecified (dI/dt)c
(dI/dt)c [(dV/dt)c] / S pecified (dI/dt)c
2.2
2.0
1.8
2.0
TW
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
C
1.6
B
1.4
T835/CW/BW
1.2
1.0
0.8
T810/S W
0.6
0.4
(dV/dt)c (V/µs )
1.0
(dV/dt)c (V/µs )
1.0
0.2
0.0
0.1
10.0
100.0
0.1
10.0
100.0
2
Fig. 9: R elative variation of critical rate of
decrease of main current versus junction
temperature.
Fig. 10: DPAK and D PAK Thermal resistance
junction to ambient versus copper surface under
tab (printed circuit board FR 4, copper thickness:
35 m).
(dI/dt)c [Tj] / (dI/dt)c [Tj s pecified]
R th(j-a) (° C/W)
6
100
90
5
4
3
2
1
0
80
70
60
50
40
30
20
10
0
DPAK
D² PAK
Tj(° C)
50
S (cm² )
0
4
8
12 16 20 24 28 32 36 40
0
25
75
100
125
相关型号：
©2020 ICPDF网 联系我们和版权申明