RTM2302CX [SIRECT]
20V N-Channel Enhancement Mode MOSFET; 20V N沟道增强型MOSFET
| 型号： | RTM2302CX |
| 厂家： | 
Sirectifier Global Corp. |
| 描述： | 20V N-Channel Enhancement Mode MOSFET |
| 文件： | 总4页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
E L E C T R O N I C
RTM2302
20V N-Channel Enhancement Mode MOSFET
VDS = 20V
Pin assignment:
1. Gate
2. Source
3. Drain
RDS (on), Vgs @ 4.5V, Ids @ 3.6A = 65mΩ
RDS (on), Vgs @ 2.5V, Ids @ 3.1A = 95mΩ
Features
Advanced trench process technology
Excellent thermal and electrical capabilities
Compact and low profile SOT-23 package
High density cell design for ultra low on-resistance
Block Diagram
Ordering Information
Part No.
Packing
Package
RTM2302CX
Tape & Reel
SOT-23
Absolute Maximum Rating (Ta = 25℃ unless otherwise noted)
Parameter
Symbol
Limit
20V
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
VDS
VGS
ID
± 8
V
2.4
A
IDM
PD
10
A
Ta = 25 oC
Ta = 75 oC
1.25
W
0.8
Operating Junction Temperature
TJ
+150
- 55 to +150
oC
oC
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Performance
Parameter
Symbol
TL
Limit
5
Unit
S
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
Rθja
100
oC/W
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RTM2302
Electrical Characteristics
Rate ID = 2.4A, (Ta = 25 oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
VGS = 0V, ID = 250uA
VGS = 4.5V, ID = 3.6A
VGS = 2.5V, ID = 3.1A
VDS = VGS, ID = 250uA
VDS = 20V, VGS = 0V
VGS = ± 8V, VDS = 0V
VDS ≧ 5V, VGS = 4.5V
VDS = 5V, ID = 3.6A
BVDSS
RDS(ON)
RDS(ON)
VGS(TH)
IDSS
20
--
--
50
75
--
--
65
95
--
V
mΩ
--
0.45
--
V
uA
nA
A
--
1.0
± 100
--
IGSS
--
--
On-State Drain Current
Forward Transconductance
Dynamic
ID(ON)
gfs
6
--
--
10
--
S
Total Gate Charge
VDS = 10V, ID = 3.6A,
VGS = 4.5V
Qg
Qgs
Qgd
td(on)
tr
--
--
--
--
--
--
--
--
--
--
5.2
0.65
1.5
7
10
--
nC
nS
Gate-Source Charge
Gate-Drain Charge
--
Turn-On Delay Time
VDD = 10V, RL = 10Ω,
ID = 1A, VGEN = 4.5V,
RG = 6Ω
15
80
60
25
--
Turn-On Rise Time
55
Turn-Off Delay Time
td(off)
tf
16
Turn-Off Fall Time
10
Input Capacitance
VDS = 10V, VGS = 0V,
Ciss
Coss
Crss
450
70
f = 1.0MHz
pF
Output Capacitance
--
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
43
--
IS
--
--
--
1.6
1.2
A
V
IS = 1.0A, VGS = 0V
VSD
0.75
Note : pulse test: pulse width <=300uS, duty cycle <=2%
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RTM2302
Typical Characteristics Curve (Ta = 25 oC unless otherwise noted)
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RTM2302
Typical Characteristics Curve (Ta = 25 oC unless otherwise noted)
SOT-23 Mechanical Drawing
A
B
F
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
DIM
MIN
2.88
0.39
1.78
0.51
1.59
1.04
0.07
MAX
2.91
0.42
2.03
0.61
1.66
1.08
0.09
MAX
0.115
0.017
0.080
0.024
0.065
0.043
0.004
A
B
C
D
E
F
0.113
0.015
0.070
0.020
0.063
0.041
0.003
E
G
G
D
C
Sirectifier Global Corp., Delaware, U.S.A.
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France: ss@sirectsemi.com
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