SDT70 [SIRECT]

Thyristor-Diode Modules, Diode-Thyristor Modules; 晶闸管,二极管模块,二极管,晶闸管模块
SDT70
型号: SDT70
厂家: Sirectifier Global Corp.    Sirectifier Global Corp.
描述:

Thyristor-Diode Modules, Diode-Thyristor Modules
晶闸管,二极管模块,二极管,晶闸管模块

二极管
文件: 总4页 (文件大小:486K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STD/SDT70  
Thyristor-Diode Modules, Diode-Thyristor Modules  
Dimensions in mm (1mm=0.0394")  
Type  
VRSM  
VDSM  
V
VRRM  
VDRM  
V
STD/SDT70GK08 900  
STD/SDT70GK12 1300  
STD/SDT70GK14 1500  
STD/SDT70GK16 1700  
STD/SDT70GK18 1900  
STD/SDT70GK20 2100  
STD/SDT70GK22 2300  
STD/SDT70GK24 2500  
800  
1200  
1400  
1600  
1800  
2000  
2200  
2400  
Symbol  
Test Conditions  
Maximum Ratings  
Unit  
I
I
TRMS, IFRMS TVJ=TVJM  
180  
70  
A
TAVM, IFAVM TC=85oC; 180o sine  
TVJ=45oC  
VR=0  
TVJ=TVJM  
VR=0  
t=10ms (50Hz), sine  
t=8.3ms (60Hz), sine  
t=10ms(50Hz), sine  
t=8.3ms(60Hz), sine  
1600  
1700  
1450  
1550  
ITSM, IFSM  
A
TVJ=45oC  
t=10ms (50Hz), sine  
t=8.3ms (60Hz), sine  
t=10ms(50Hz), sine  
t=8.3ms(60Hz), sine  
13500  
12600  
10600  
10250  
VR=0  
i2dt  
A2s  
TVJ=TVJM  
VR=0  
150  
TVJ=TVJM  
f=50Hz, tp=200us  
(di/dt)cr VD=2/3VDRM  
IG=0.45A  
repetitive, IT=250A  
A/us  
500  
non repetitive, IT=ITAVM  
VDR=2/3VDRM  
diG/dt=0.45A/us  
TVJ=TVJM;  
RGK= ; method 1 (linear voltage rise)  
1000  
V/us  
W
(dv/dt)cr  
TVJ=TVJM  
PGM  
tp=30us  
tp=300us  
10  
5
IT=ITAVM  
0.5  
10  
W
V
PGAV  
VRGM  
-40...+125  
125  
-40...+125  
TVJ  
TVJM  
Tstg  
oC  
50/60Hz, RMS  
IISOL<1mA  
t=1min  
t=1s  
3000  
3600  
VISOL  
V~  
_
Mounting torque (M5)  
Terminal connection torque (M5)  
2.5-4.0/22-35  
2.5-4.0/22-35  
Nm/lb.in.  
g
Md  
Typical including screws  
Weight  
90  
STD/SDT70  
Thyristor-Diode Modules, Diode-Thyristor Modules  
Symbol  
Test Conditions  
Characteristic Values  
Unit  
TVJ=TVJM; VR=VRRM; VD=VDRM  
IT, IF=320A; TVJ=25oC  
For power-loss calculations only (TVJ=125oC)  
5
mA  
V
IRRM, IDRM  
VT, VF  
VTO  
1.65  
0.85  
3.2  
V
m
rT  
VD=6V;  
TVJ=25oC  
TVJ=-40oC  
1.5  
1.6  
V
VGT  
IGT  
VD=6V;  
TVJ=25oC  
100  
200  
mA  
TVJ=-40oC  
TVJ=TVJM;  
VD=2/3VDRM  
0.2  
10  
V
VGD  
IGD  
mA  
TVJ=25oC; tp=10us; VD=6V  
IG=0.45A; diG/dt=0.45A/us  
TVJ=25oC; VD=6V; RGK=  
TVJ=25oC; VD=1/2VDRM  
IG=0.45A; diG/dt=0.45A/us  
IL  
IH  
450  
200  
2
mA  
mA  
us  
tgd  
TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us  
VR=100V; dv/dt=20V/us; VD=2/3VDRM  
typ.  
185  
us  
tq  
TVJ=TVJM; IT, IF=50A; -di/dt=6A/us  
170  
45  
uC  
A
QS  
IRM  
per thyristor/diode; DC current  
per module  
0.3  
0.15  
K/W  
K/W  
RthJC  
RthJK  
per thyristor/diode; DC current  
per module  
0.5  
0.25  
Creeping distance on surface  
Strike distance through air  
12.7  
9.6  
50  
mm  
mm  
m/s2  
dS  
dA  
a
Maximum allowable acceleration  
FEATURES  
* International standard package  
APPLICATIONS  
* DC motor control  
ADVANTAGES  
* Space and weight savings  
* Copper  
* Planar passivated chips  
* Isolation voltage 3600 V~  
* Softstart AC motor controller  
* Light, heat and temperature  
control  
* Simple mounting with two screws  
* Improved temperature and power  
cycling  
base plate  
* Reduced protection circuits  
STD/SDT70  
Thyristor-Diode Modules, Diode-Thyristor Modules  
Fig. 1 Surge overload current  
ITSM, IFSM: Crest value, t: duration  
Fig. 2 i2dt versus time (1-10 ms)  
Fig. 2a Maximum forward current  
at case temperature  
10  
1: IGT, TVJ = 125oC  
2: IGT, TVJ  
3: IGT, TVJ = -40oC  
=
25oC  
V
VG  
3
2
6
1
5
1
4
4: PGAV = 0.5 W  
5: PGM 5 W  
6: PGM = 10 W  
=
IGD, TVJ = 125oC  
0.1  
100  
101  
102  
103  
IG  
104  
mA  
Fig. 3 Power dissipation versus on-state current and ambient temperature  
(per thyristor or diode)  
Fig. 4 Gate trigger characteristics  
1000  
TVJ = 25oC  
s
tgd  
typ.  
Limit  
100  
10  
3 x STD/SDT70  
1
10  
mA  
100  
1000  
IG  
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current  
and ambient temperature  
Fig. 6 Gate trigger delay time  
STD/SDT70  
Thyristor-Diode Modules, Diode-Thyristor Modules  
Fig. 7 Three phase AC-controller:  
Power dissipation versus RMS  
output current and ambient  
temperature  
3 x STD/SDT70  
Fig. 8 Transient thermal impedance  
junction to case (per thyristor or  
STD/SDT70  
diode)  
RthJC for various conduction angles d:  
d
RthJC (K/W)  
DC  
0.3  
180oC  
120oC  
60oC  
30oC  
0.31  
0.33  
0.35  
0.37  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
0.008  
0.054  
0.238  
0.0019  
0.047  
0.3  
Fig. 9 Transient thermal impedance  
junction toheatsink(perthyristor  
or diode)  
STD/SDT70  
RthJK for various conduction angles d:  
d
RthJK (K/W)  
DC  
0.5  
180oC  
120oC  
60oC  
30oC  
0.51  
0.53  
0.55  
0.57  
Constants for ZthJK calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
0.008  
0.054  
0.238  
0.2  
0.0019  
0.047  
0.3  
1.25  

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