SG15N12P [SIRECT]

Discrete IGBTs; 分立式IGBT


型号：	SG15N12P
厂家：	Sirectifier Global Corp.
描述：	Discrete IGBTs 分立式IGBT 双极性晶体管
文件：	总2页 (文件大小：174K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SG15N12P, SG15N12DP

Discrete IGBTs

Dimensions TO-220AB

Dim.

Inches

Min. Max.

Milimeter

Min. Max.

0.500 0.550

0.580 0.630

0.390 0.420

0.139 0.161

0.230 0.270

0.100 0.125

0.045 0.065

0.110 0.230

0.025 0.040

12.70 13.97

14.73 16.00

9.91 10.66

3.54

5.85

2.54

1.15

2.79

0.64

2.54

4.32

1.14

0.35

2.29

4.08

6.85

3.18

1.65

5.84

1.01

BSC

4.82

1.39

0.56

2.79

G=Gate, C=Collector, E=Emitter

0.100

BSC

0.170 0.190

0.045 0.055

0.014 0.022

0.090 0.110

SG15N12DP

Test Conditions

SG15N12P

Symbol

Maximum Ratings

Unit

VCES

VCGR

TJ=25^oC to 150^oC

1200

TJ=25^oC to 150^oC; RGE=1 M ;

VGES

VGEM

Continuous

Transient

±20

±30

IC25

IC90

ICM

TC=25^oC

TC=90^oC

TC=25^oC, 1 ms

VGE=15V; TVJ=125^oC; RG=10

Clamped inductive load

ICM=40

@ 0.8 VCES

SSOA

(RBSOA)

TC=25^oC

150

-55...+150

150

-55...+150

TJM

Tstg

^oC

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10s

300

Mounting torque with screw M3

Mounting torque with screw M3.5

0.45/4

0.55/5

Nm/Ib.in.

Weight

Characteristic Values

min. typ. max.

=25^o

C, unless otherwise specified)

Symbol

Test Conditions

Unit

BV^CES

=250uA; VGE=0V

=250uA; VCE=VGE

600

2.5

GE(th)

5.0

100

3.5

CES

CE=VCES

GE=0V;

;

=25^o

=125^o

GES

CE=0V; VGE=±20V

=IC90; VGE=15V

±100

3.2

CE(sat)

SG15N12P, SG15N12DP

Discrete IGBTs

=25^o

C, unless otherwise specified)

Characteristic Values

Symbol

Test Conditions

Unit

min.

typ.

max.

gts

C=IC90; VCE=10V

Pulse test, t 300us, duty cycle 2%

ies

1720

oes

CE=25V; VGE=0V; f=1MHz

res

C=IC90; VGE=15V; VCE=0.5VCES

d(on)

d(off)

off

d(on)

Inductive load, T

=25^o

=IC90; VGE=15V;

CE=960V; R =Roff=10

Remarks:Switching times may increase

for VCE(Clamp) 0.8VCES' higher T or

increased R

Inductive load, T

180

160

1.75

280

320

3.0

=125^o

=IC90; VGE=15V;

CE=960V; R =Roff=10

Remarks:Switching times may increase

for VCE(Clamp) 0.8VCES' higher T or

increased R

0.60

300

360

3.5

d(off)

off

K/W

thJC

0.83

thCK

0.5

=25^o

C, unless otherwise specified)

Reverse Diode (FRED)

Symbol

Characteristic Values

Test Conditions

Unit

min.

typ.

max.

=20A; VGE=0V

=20A; VGE=0V; T

2.6

2.1

2.8

=125^o

=25^o

=90^o

=20V; -di

GE=0V; T

=1A; -di /dt=100A/us; V

/dt=400A/us; V

=600V

200

=125^o

=30V; VGE=0V

thJC

1.6

K/W

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