STD90 [SIRECT]

Thyristor-Diode Modules, Diode-Thyristor Modules; 晶闸管，二极管模块，二极管，晶闸管模块


型号：	STD90
厂家：	Sirectifier Global Corp.
描述：	Thyristor-Diode Modules, Diode-Thyristor Modules 晶闸管，二极管模块，二极管，晶闸管模块二极管
文件：	总4页 (文件大小：497K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STD/SDT90

Thyristor-Diode Modules, Diode-Thyristor Modules

Dimensions in mm (1mm=0.0394")

Type

VRSM

VDSM

VRRM

VDRM

STD/SDT90GK08 900

STD/SDT90GK12 1300

STD/SDT90GK14 1500

STD/SDT90GK16 1700

STD/SDT90GK18 1900

STD/SDT90GK20 2100

800

1200

1400

1600

1800

2000

Symbol

Test Conditions

Maximum Ratings

Unit

TRMS, IFRMS TVJ=TVJM

180

TAVM, IFAVM TC=85^oC; 180^osine

TVJ=45^oC

VR=0

TVJ=TVJM

VR=0

t=10ms (50Hz), sine

t=8.3ms (60Hz), sine

t=10ms(50Hz), sine

t=8.3ms(60Hz), sine

1700

1800

1540

1640

ITSM, IFSM

TVJ=45^oC

t=10ms (50Hz), sine

t=8.3ms (60Hz), sine

t=10ms(50Hz), sine

t=8.3ms(60Hz), sine

14450

13500

11850

11300

VR=0

i²dt

A²s

TVJ=TVJM

VR=0

150

TVJ=TVJM

f=50Hz, tp=200us

(di/dt)cr VD=2/3VDRM

IG=0.45A

repetitive, IT=250A

A/us

500

non repetitive, IT=ITAVM

VDR=2/3VDRM

diG/dt=0.45A/us

TVJ=TVJM;

RGK= ; method 1 (linear voltage rise)

1000

V/us

(dv/dt)cr

TVJ=TVJM

PGM

tp=30us

tp=300us

IT=ITAVM

0.5

PGAV

VRGM

-40...+125

125

-40...+125

TVJ

TVJM

Tstg

^oC

50/60Hz, RMS

IISOL<1mA

t=1min

t=1s

3000

3600

VISOL

Mounting torque (M5)

Terminal connection torque (M5)

2.5-4.0/22-35

Nm/lb.in.

Typical including screws

Weight

STD/SDT90

Thyristor-Diode Modules, Diode-Thyristor Modules

Symbol

Test Conditions

Characteristic Values

Unit

TVJ=TVJM; VR=VRRM; VD=VDRM

IT, IF=300A; TVJ=25^oC

For power-loss calculations only (TVJ=125^oC)

IRRM, IDRM

VT, VF

VTO

1.74

0.85

3.2

VD=6V;

TVJ=25^oC

TVJ=-40^oC

2.5

2.6

VGT

IGT

VD=6V;

TVJ=25^oC

150

200

TVJ=-40^oC

TVJ=TVJM;

VD=2/3VDRM

0.2

VGD

IGD

TVJ=25^oC; tp=10us; VD=6V

IG=0.45A; diG/dt=0.45A/us

TVJ=25^oC; VD=6V; RGK=

TVJ=25^oC; VD=1/2VDRM

IG=0.45A; diG/dt=0.45A/us

450

200

tgd

TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us

VR=100V; dv/dt=20V/us; VD=2/3VDRM

typ.

185

TVJ=TVJM; IT, IF=50A; -di/dt=6A/us

170

IRM

per thyristor/diode; DC current

per module

0.3

0.15

K/W

RthJC

RthJK

per thyristor/diode; DC current

per module

0.5

0.25

Creeping distance on surface

Strike distance through air

12.7

9.6

m/s²

Maximum allowable acceleration

FEATURES

* International standard package

APPLICATIONS

* DC motor control

ADVANTAGES

* Space and weight savings

* Copper

* Planar passivated chips

* Isolation voltage 3600 V~

* Softstart AC motor controller

* Light, heat and temperature

control

* Simple mounting with two screws

* Improved temperature and power

cycling

base plate

* Reduced protection circuits

STD/SDT90

Thyristor-Diode Modules, Diode-Thyristor Modules

Fig. 1 Surge overload current

I_TSM, I_FSM: Crest value, t: duration

Fig. 2 i²dt versus time (1-10 ms)

Fig. 2a Maximum forward current

at case temperature

Fig. 3 Power dissipation versus on-state current and ambient temperature

(per thyristor or diode)

Fig. 4 Gate trigger characteristics

3 x STD/SDT90

Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current

and ambient temperature

Fig. 6 Gate trigger delay time

STD/SDT90

Thyristor-Diode Modules, Diode-Thyristor Modules

Fig. 7 Three phase AC-controller:

Power dissipation versus RMS

output current and ambient

temperature

3 x STD/SDT90

Fig. 8 Transient thermal impedance

junction to case (per thyristor or

STD/SDT90

diode)

R_thJCfor various conduction angles d:

R_thJC(K/W)

0.3

180^oC

120^oC

60^oC

30^oC

0.31

0.33

0.35

0.37

Constants for Z_thJCcalculation:

R_thi(K/W)

t_i(s)

0.008

0.054

0.238

0.0019

0.047

0.3

Fig. 9 Transient thermal impedance

junction toheatsink(perthyristor

or diode)

STD/SDT90

R_thJKfor various conduction angles d:

R_thJK(K/W)

0.5

180^oC

120^oC

60^oC

30^oC

0.51

0.53

0.55

0.57

Constants for Z_thJKcalculation:

R_thi(K/W)

t_i(s)

0.008

0.054

0.238

0.2

0.0019

0.047

0.3

1.25

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