STT49GKXXB [SIRECT]
Thyristor-Thyristor Modules;
| 型号： | STT49GKXXB |
| 厂家： | 
Sirectifier Global Corp. |
| 描述： | Thyristor-Thyristor Modules |
| 文件： | 总4页 (文件大小：884K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STT49GKxxB
Thyristor-Thyristor Modules
Tolerance:+0.5mm
-
Dimensions in mm (1mm=0.0394")
Type
VRSM
VDSM
V
VRRM
VDRM
V
STT49GK08B
STT49GK12B
STT49GK14B
STT49GK16B
STT49GK18B
900
800
1300
1500
1700
1900
1200
1400
1600
1800
Symbol
Test Conditions
Maximum Ratings
Unit
I
I
TRMS, IFRMS TVJ=TVJM
76
49
A
TAVM, IFAVM TC=85oC; 180o sine
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
1150
1230
1000
1070
ITSM, IFSM
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
6600
6280
5000
4750
VR=0
i2dt
A2s
TVJ=TVJM
VR=0
150
TVJ=TVJM
f=50Hz, tp=200us
(di/dt)cr VD=2/3VDRM
IG=0.45A
repetitive, IT=150A
A/us
500
non repetitive, IT=ITAVM
VDR=2/3VDRM
diG/dt=0.45A/us
TVJ=TVJM;
RGK= ; method 1 (linear voltage rise)
1000
V/us
W
(dv/dt)cr
TVJ=TVJM
IT=ITAVM
tp=30us
tp=300us
10
5
PGM
0.5
10
W
V
PGAV
VRGM
-40...+125
125
-40...+125
TVJ
TVJM
Tstg
oC
50/60Hz, RMS
IISOL<1mA
t=1min
t=1s
3000
3600
VISOL
V~
_
Mounting torque (M5)
Terminal connection torque (M5)
2.5-4.0/22-35
2.5-4.0/22-35
Nm/lb.in.
g
Md
Typ.
Weight
110
STT49GKxxB
Thyristor-Thyristor Modules
Symbol
Test Conditions
Characteristic Values
Unit
TVJ=TVJM; VR=VRRM; VD=VDRM
ITM=147A; TVJ=25oC
For power-loss calculations only (TVJ=125oC)
5
mA
V
IRRM, IDRM
VTM
1.65
0.85
5.3
V
VTO
m
rT
VD=6V;
TVJ=25oC
TVJ=-40oC
1.5 max
1.6 max
V
VGT
IGT
VD=6V;
TVJ=25oC
100
200
mA
TVJ=-40oC
TVJ=TVJM;
VD=2/3VDRM
0.2
10
V
VGD
IGD
mA
TVJ=25oC; tp=10us; VD=6V
IG=0.45A; diG/dt=0.45A/us
TVJ=25oC; VD=6V; RGK=
TVJ=25oC; VD=1/2VDRM
IG=0.45A; diG/dt=0.45A/us
IL
IH
450
200
2
mA
mA
us
tgd
TVJ=TVJM; IT=120A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
typ.
150
us
tq
TVJ=TVJM; IT, IF=50A; -di/dt=0.64A/us
90
11
uC
A
QS
IRM
per thyristor/diode; DC current
per module
0.53
0.265
K/W
K/W
RthJC
RthJK
per thyristor/diode; DC current
per module
0.73
0.365
Creeping distance on surface
Strike distance through air
12.7
9.6
50
mm
mm
m/s2
dS
dA
a
Maximum allowable acceleration
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Copper base plate
* DC motor control
* Space and weight savings
* Softstart AC motor controller
* Light, heat and temperature
control
* Simple mounting with two screws
* Improved temperature and power
cycling
* Glass passivated chips
* Isolation voltage 3600 V~
* Reduced protection circuits
* UL file NO.310749
* RoHs compliant
STT49GKxxB
Thyristor-Thyristor Modules
100
100
W
1
1.2
0.8
0.6 Rth(j-a)
1
.
/2 STT
B
49
/2 STD49B
1
.
W
rec.
180
1.4
sin.
180
75
50
25
75
1.6
120
90
.
1 8
60
cont.
2
r ec.
15
30
50
2.5
3
3.5
4
5
6
25
TAV
0
8
P
P
TAV
K/W
0
OC
I
TAV
20
0
10
30
40
Ta
100
50
60
0
A
50
150
Fig.1L Power dissipation per thyristor vs. on-state current
Fig.1R Power dissipation per thyristor vs. ambient temp
200
200
3
0.1
0
0.2
.
Rth(c-a)
.
.
1
1
STT49B
W
Tc
66
W
49B
STD
0.4
0.5
150
150
76
86
96
0.6
0.7
0 8
.
100
100
50
1
1.2
1.5
2
106
OC
116
50
3
4
Pvtot
Pvtot
0
K/W
0
OC 150
20
RM
120
0
40
60
100
80
A
0
Ta
50
100
I
Fig.2L Power dissipation per module vs. rms current
Fig.2R Power dissipation per module vs. case temp
400
56
Tc
400
0.05
0.1
.
Rth(c-a)
.
.
2
2
STT49B
STD49B
W
.
015
W
66
0.2
300
300
0.25
0.3
76
86
R
0.35
0.4
L
200
100
200
.
0 5
96
0.6
0.75
106
1
1.25
1.5
100
2
116
OC
Pvtot
0
Pvtot
0
K/W
OC
ID
Ta
0
120
60
100
0
50
100
20
40
80
150
A
Fig.3L Power dissipation of two modules vs. direct current
Fig.3R Power dissipation of two modules vs. case temp
STT49GKxxB
Thyristor-Thyristor Modules
500
64
Tc
500
W
0.1
0 16
0.06 0.04
0.08
.
Rth(c-a)
.
3
3
STT49B
STD49B
.
W
.
.
0 18
74
400
400
.2
0
w
3
84
0.2
5
300
300
200
100
0.3
B
6
0.35
94
0.4
0.5
0.6
200
104
114
0.8
1
100
1.5
OC
124
Pvtot
0
Pvtot
0
K/W
A
OC
Ta
150
0
50
100
0
ID
I
RMS
50
100
150
Fig.4R Power dissipation of three modules vs. case temp
Fig.4L Power dissipation of three modules vs. direct and rms current
1000
1.2
.
.
1
/2
1
STT49B
/2
.
STT49B
K/W
0.8
uC
Zth(j-s)
1
/2
1
/2
.
STD
49B
STD
49B
100A
TM=
I
50A
20A
10A
Zth(j-c)
A
5
100
0.4
Qrr
10
Tvj=125oC
Zth
0
0
10
-diT/dt
A/us 100
0.001
10
s
100
0.01
0.1
1
t
Fig.5 Recovered charge vs. current decrease
Fig.6 Transient thermal impedance vs. time
2
250
1
.
/2
typ.
IT(OV)
max.
STT49B
1
.
/2
STT49B
A
1
/2
.
I
TSM
1.6
1.4
STD
49B
.
1
/2
49B
STD
200
I
I
TSM(25 OC) =1000A
TSM(125OC)=850A
150
100
50
1.2
1
.
V
0
V
RRM
.
0.5
1
RRM
.
V
RRM
0.8
0.6
0.4
Tvj=25 OC
Tvj=125OC
I
T
- -
0
0
Vt 0.5
Fig.7 On-state charactristics
1
1.5
2
V 2.5
1
100
t
10
ms 1000
Fig.8 Surge overload current vs. time
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