SPA-2118 [SIRENZA]
850 MHz 1 Watt Power Amplifier with Active Bias; 850兆赫1瓦功率放大器的有源偏置
| 型号： | SPA-2118 |
| 厂家： | 
SIRENZA MICRODEVICES |
| 描述： | 850 MHz 1 Watt Power Amplifier with Active Bias |
| 文件： | 总6页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Description
SPA-2118
Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in
a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
850 MHz 1 Watt Power Amplifier
with Active Bias
This product is specifically designed for use as a driver
amplifier for infrastructure equipment in the 850 MHz band.
Its high linearity makes it an ideal choice for multi-carrier and
digital applications.
Product Features
•High Linearity Performance:
+20.7 dBm IS-95 CDMA Channel Power
at -55 dBc ACP
+47 dBm typ. OIP3
VC1
• On-chip Active Bias Control
Active
VBIAS
•High Gain: 33 dB Typ.
Bias
RFOUT/
•Patented High Reliability GaAsHBT Technology
• Surface-Mountable Plastic Package
VC2
RFIN
VPC2
Applications
• IS-95 CDMA Systems
• Multi-Carrier Applications
• AMPS, ISM Applications
Parameters: Test Conditions:
Symbol
Units
Min.
Typ.
Max.
Z0 = 50 Ohms Temp = 25ºC, VCC= 5.0V
f0
Frequency of Operation
MHz
dBm
810
900
960
Output Power at 1dB Compression
29.0
P1dB
Adjacent Channel Power
ACP
dBc
-55.0
-52.0
34.5
IS-95 @880 MHz, ±885 KHz offset, POUT=20.7 dBm
Small Signal Gain, 880 MHz
Input VSWR
dB
-
31.5
33.0
S21
VSWR
1.5:1
Output Third Order Intercept Point
Power out per tone = +14 dBm
OIP3
NF
dBm
dB
47.0
5.0
Noise Figure
Device Current
ICC
mA
360
400
425
I
BIAS = 10mA, IC1 = 70mA, IC2 = 320mA
VCC
Device Voltage
V
4.75
5.0
31
5.25
Rth j-l
Thermal Resistance (junction - lead), TL = 85ºC
ºC/W
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-102012 Rev F
SPA-2118 850 MHz 1 Watt Power Amp.
850-950 MHz Application Circuit Data, Icc=400mA, Vcc=5V, IS-95, 9 Channels Forward
880 MHz Adjacent Channel Power vs. Channel Output Power
-40.0
-45.0
-40C
25C
-50.0
85C
-55.0
-60.0
-65.0
-70.0
-75.0
-80.0
-85.0
11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
dBm
IS-95 CDMA at 880 MHz
T=+25C
+24 dBm
+20 dBm
+10 dBm
+16 dBm
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-102012 Rev F
SPA-2118 850 MHz 1 Watt Power Amp.
850-950 MHz Application Circuit Data, ICC=400mA, VCC=5V
Input/Output Return Loss,
Isolation vs Frequency
Gain vs. Frequency
0
-10
-20
-30
-40
-50
40
36
32
28
24
T=+25°C
-40C
25C
85C
S22
S11
S12
0.8
0.85
0.9
0.95
1
0.8
0.85
0.9
0.95
1
GHz
GHz
P1dB vs Frequency
Device Current vs. Source Voltage
600
500
400
300
200
100
0
36
34
32
30
28
26
25C
-40C
85C
-40C
25C
85C
0
1
2
3
4
5
6
0.8
0.85
0.9
GHz
0.95
1
Vcc (V)
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-102012 Rev F
SPA-2118 850 MHz 1 Watt Power Amp.
850 - 950 MHz Schematic
Vcc
10uF Tantalum
External Connection
82pF
1000pF
39pF
IC2
IC1
2.2nH
6.8K
33 nH
1
2
3
4
8
7
6
5
IBIAS
Z=50 Ω, 15.1°
100pF
6.8pF
15pF
1200pF
330 Ohm
Vpc
850 - 950 MHz Evaluation Board Layout
Ref. Des.
C1
Value
Part Number
Vcc
15pF, 5%
82pF, 5%
Rohm MCH18 series
Rohm MCH18 series
AVX TAJB106K020R
Rohm MCH18 series
Rohm MCH18 series
Rohm MCH18 series
Rohm MCH18 series
Rohm MCH18 series
Toko LL1608-FS series
Coilcraft 1008HQ series
Rohm MCR03 series
Rohm MCR03 series
C3
C2
C4
C3
10uF, 10%
C4
1000pF, 5%
39pF, 5%
C2
C5
L1
C5
C6
1200pF, 5%
6.8pF, ±0.5pF
100pF, 5%
R1
C1
L2
2012
C7
C8
C8
C7
L1
2.2nH, ±0.3nH
33nH, 5%
C6
R2
L2
R1
6.8K Ohm, 5%
330 Ohm, 5%
Sirenza Microdevices
ECB-101161 Rev. C
SOIC-8 PA
R2
Eval Board
Vpc
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-102012 Rev F
SPA-2118 850 MHz 1 Watt Power Amp.
Pin #
1
Function
Description
Vc1
VC1 is the supply voltage for the first stage transistor. The configuration as
shown on application schematic is required for optimum RF performance.
2
Vbias
RF In
Vpc2
Vbias is the bias control pin for the active bias network. Recommended
configuration is shown in the Application Schematic.
RF input pin. This pin requires the use of an external DC blocking capacitor as
shown in the Application Schematic.
Vpc2 is the bias control pin for the active bias network for the second stage.
The recommended configuration is shown in the Application Schematic.
3
4
5, 6, 7, 8
RF Out/Vc2 RF output and bias pin. Bias should be supplied to this pin through an external
RF choke. Because DC biasing is present on this pin, a DC blocking capacitor
should be used in most applications (see application schematic). The supply
side of the bias network should be well bypassed. An output matching network is
necessary for optimum performance.
EPAD
Gnd
Exposed area on the bottom side of the package needs to be soldered to the
ground plane of the board for thermal and RF performance. Several vias should
be located under the EPAD as shown in the recommended land pattern (page 6).
Simplified Device Schematic
2
ACTIVE BIAS
NETWORK
4
5-8
2
1
ACTIVE BIAS
NETWORK
Absolute Maximum Ratings
3
Parameter (Ta = 25ºC)
Absolute
Limit
Max. Supply Current (IC1) at VCC typ.
Max. Supply Current (IC2) at VCC typ.
Max. Device Voltage (VCC) at Icc typ.
Max. RF Input Power
150 mA
750 mA
6.0 V
10 dBm
+160 ºC
+150 ºC
Max. Junction Temp. (TJ)
Caution: ESD sensitive
Appropriate precautions in handling, packag-
ing and testing devices must be observed.
Max. Storage Temp.
Operation of this device beyond any one of these limits
may cause permanent damage. For reliable continuous
operation, the device voltage and current must not exceed
the maximum operating values specified in the table on
page one.
The Moisture Sensitivity Level rating for this device is level 1
(MSL-1) based on the JEDEC 22-A113 standard classifica-
tion. No special moisture packaging/handling is required
Bias Conditions should also satisfy the following
expression:
during storage, shipment, or installation of the devices.
ICCVCC (max) < (TJ - TL)/Rth,j-l
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-102012 Rev F
5
SPA-2118 850 MHz 1 Watt Power Amp.
Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
SPA-2118
500
7"
Package Outline Drawing
(See SMDI MPO-101644 for tolerances, available on our website)
8
7
6
5
.194 [4.93]
EXPOSED PAD
Lot ID
SPA
.236 [5.994]
.155 [3.937]
2118
1
2
3
4
Beveled Edge
.045 [1.143]
.035 [.889]
TOP VIEW
BOTTOM VIEW
.013 [.33] x 45°
.050 [1.27]
.016 [.406]
.061 [1.549]
.058 [1.473]
.008 [.203]
.194 [4.928]
.155 [3.937]
END VIEW
SEATING PLANE
.003 [.076]
SEE DETAIL A
SIDE VIEW
Recommended Land Pattern
PARTING LINE
0.150 [3.81]
Plated-Thru Holes
0.140 [3.56]
0.300 [7.62]
(0.015" Dia, 0.030" Pitch)
Machine
Screws
.025
5°
DETAIL A
0.080 [2.03]
0.050 [1.27]
Note: DIMENSIONS ARE IN INCHES [MM]
0.020 [0.51]
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-102012 Rev F
6
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