SUF-3000 [SIRENZA]

0.25-16 GHz, Cascadable pHEMT MMIC Amplifier; 0.25-16千兆赫,可级联的pHEMT MMIC放大器
SUF-3000
型号: SUF-3000
厂家: SIRENZA MICRODEVICES    SIRENZA MICRODEVICES
描述:

0.25-16 GHz, Cascadable pHEMT MMIC Amplifier
0.25-16千兆赫,可级联的pHEMT MMIC放大器

放大器 射频 微波
文件: 总4页 (文件大小:136K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Preliminary  
SUF-3000  
0.25-16 GHz, Cascadable pHEMT  
MMICAmplifier  
Product Description  
Sirenza Microdevices’ SUF-3000 is a monolithically matched broadband  
high IP3 gain block covering 0.25-16 GHz. This pHEMT FET-based  
amplifier uses a patented self-bias Darlington topology featuring a gain  
and temperature compensating active bias network that operates from  
a single 5V supply. It offers efficient, cascadable performance in a  
compact 0.88 x 0.80 mm2 die. It is well-suited for RF, LO, and IF driver  
applications.  
Product Features  
Broadband Performance  
Gain = 10 dB @ 6 GHz  
Gain & Return Loss vs. Frequency  
(GSG Probe Data)  
P1dB = 15.5 dBm @ 6 GHz  
Low-noise, Efficient Gain Block  
• 5V Operation, No Dropping Resistor  
Low Gain Variation vs. Temperature  
Patented Thermal Design  
12  
10  
8
0
GAIN  
-5  
-10  
-15  
-20  
-25  
-30  
Patented Self-Bias Darlington Circuit  
ORL  
6
Applications  
Broadband Communications  
\
4
IRL  
4
Test Instrumentation  
Military & Space  
LO and IF Mixer Applications  
High IP3 RF Driver Applications  
2
0
0
8
12  
16  
20  
Frequency (Ghz)  
Symbol  
Parameters  
Small Signal Power Gain  
Units  
Frequency  
Min.  
Typ.  
Max.  
2 GHz  
6 GHz  
14 GHz  
2 GHz  
6 GHz  
14 GHz  
2 GHz  
6 GHz  
14 GHz  
2 GHz  
6 GHz  
14 GHz  
2 GHz  
6 GHz  
14 GHz  
2 GHz  
6 GHz  
14 GHz  
2 GHz  
6 GHz  
14 GHz  
10.0  
10.0  
8.0  
Gp  
dB  
16.0  
15.5  
13.5  
27.0  
26.5  
19.5  
4.2  
P1dB  
OIP3  
NF  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
Noise Figure  
dBm  
dBm  
dB  
4.8  
5.0  
-22.5  
-32.5  
14.0  
-15.0  
-16.5  
-17.0  
-15.5  
IRL  
Input Return Loss  
dB  
ORL  
Isol  
Output Return Loss  
dB  
Reverse Isolation  
dB  
-15.0  
-15.0  
5.0  
51  
-0.01  
224  
VD  
ID  
Device Operating Voltage  
Device Operating Current  
V
mA  
Device Gain Temperature Coefficient  
Thermal Resistance (junction-to-backside)  
dB/°C  
°C/W  
ΔG/ΔT  
Rth, j-l  
V= 5 V  
I= 80 mA Typ.  
OIP Tone Spacing = 1 MHz, Pout per tone = 0 dBm  
Test Conditions:  
Test Conditions: VD = 5.0V, ID = 51mA, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm  
ZS = ZL = 50 Ohms, 25C, GSG Probe Data With Bias Tees  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this  
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or  
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights  
reserved.  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-105417 Rev A  
Preliminary  
SUF-3000 0.25-16 GHz Cascadable MMIC Amplifier  
Typical Performance (GSG Probe Data)  
S21 vs. Frequency  
P1dB vs. Frequency  
20  
12  
10  
8
25C  
-20C  
85C  
18  
16  
14  
12  
10  
6
-20C  
4
25C  
85C  
2
0
0
4
8
12  
16  
20  
0
2
4
6
8
10  
12  
14  
16  
18  
Frequency (GHz)  
Frequency (GHz)  
S11 vs. Frequency  
S22 vs. Frequency  
0
-5  
0
-20C  
25C  
85C  
-5  
-10  
-15  
-20  
-25  
-30  
-10  
-15  
-20  
-25  
-30  
-20C  
25C  
85C  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
Frequency (GHz)  
Frequency (GHz)  
Noise Figure vs. Frequency  
OIP3 vs. Frequency  
7
6
5
4
3
2
1
0
30  
28  
26  
24  
22  
20  
18  
16  
25C  
25C  
-20C  
85C  
-20C  
85C  
0
2
4
6
8
10  
12  
14  
16  
18  
0
2
4
6
8
10  
12  
14  
16  
18  
Frequency (GHz)  
Frequency (GHz)  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
2
http://www.sirenza.com  
EDS-105417 Rev A  
Preliminary  
SUF-3000 0.25-16 GHz Cascadable MMIC Amplifier  
Typical Performance (GSG Probe Data)  
Freq  
(GHz)  
0.25  
0.5  
0.85  
2
VD  
(V)  
5
Current  
(mA)  
51  
Gain  
(dB)  
10.5  
10.0  
10.0  
10.0  
10.0  
10.0  
9.5  
P1dB  
OIP3  
S11  
S22  
(dB)  
NF  
(dBm)  
(dBm)  
(dB)  
(dB)  
-17.5  
-19.0  
-21.0  
-22.0  
-27.0  
-32.0  
-17.0  
-14.0  
-14.5  
-13.5  
-14.0  
-15.0  
-15.0  
-15.0  
-16.0  
-21.0  
-17.0  
-13.5  
5
51  
51  
5
15.5  
16.0  
16.0  
15.5  
15.0  
13.5  
13.0  
25.5  
27.0  
27.5  
26.5  
24.5  
22.5  
22.0  
4.4  
4.2  
4.5  
4.8  
5.5  
5.0  
5.7  
5
51  
51  
4
5
6
10  
5
51  
51  
5
14  
16  
5
51  
51  
8.0  
7.0  
5
Test Conditions: GSG Probe Data With Bias Tees, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm, 25°C  
Parameter  
Max Device Current (ID)  
Max Device Voltage (VD)  
Max RF Input Power  
Absolute Limit  
60mA  
5.5V  
10dBm  
Max Dissipated Power  
Max Junction Temperature (TJ)  
Operating Temperature Range (TL)  
Max Storage Temp.  
330mW  
150C  
-40 to +85C  
-65 to +150C  
Operation of this device beyond any one of these limits may cause  
permanent damage. For reliable continuous operation, the device  
voltage and current must not exceed the maximum operating values  
specified in the table on page one.  
Bias Conditions should also satisfy the following expression:  
IDVD < (TJ - TL) / RTH, j-l  
TL=Backside of die  
Current Variation vs. Temperature  
ELECTROSTATIC SENSITIVE DEVICE  
Appropriate precautions in handling, packaging  
and testing devices must be observed.  
Current vs. Voltage  
60  
55  
50  
45  
-20C  
25C  
40  
85C  
35  
30  
4.75 4.80 4.85 4.90 4.95 5.00 5.05 5.10 5.15 5.20 5.25  
VD  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
http://www.sirenza.com  
3
EDS-105417 Rev A  
Preliminary  
SUF-3000 0.25-16 GHz Cascadable MMIC Amplifier  
Pad Description  
2
1
Notes:  
Pad #  
1
Function  
Description  
1. All Dimensions in Inches [Millimeters].  
2. No connection required for unlabeled bond pads.  
3. Die Thickness is 0.004 (0.100).  
4. Typical bond pad is 0.004 (0.100) square.  
5. Backside metalization: Gold.  
6. Backside is Ground.  
This pad is DC coupled and matched to 50 Ohms.  
An external DC block is required.  
This pad is DC coupled and matched to 50 Ohms.  
Bias is applied through this pad.  
RFIN  
RFOUT / Bias  
GND  
2
7. Bond pad metalization: Gold.  
Die  
Bottom  
Die bottom must be connected to RF/DC ground  
using silver-filled conductive epoxy.  
Device Assembly  
+5V  
Interconnect  
Wire or Ribbon  
Bypass Cap(s)  
Choke  
50Ω Line  
DC Block  
DC Block  
50Ω Line  
3-5 mil gap  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
4
http://www.sirenza.com  
EDS-105417 Rev A  

相关型号:

SUF-4000

0.15-10 GHz, Cascadable pHEMT MMIC Amplifier
SIRENZA

SUF-5000

0.1-3.7 GHz, Cascadable pHEMT MMIC Amplifier
SIRENZA

SUF-6000

2-16 GHz Broadband pHEMT Amplifier
SIRENZA

SUF1002

Dual N-channel Trench MOSFET
AUK

SUF101A

1.0AMP Surface Mount Super Fast Recovery Rectifiers
SECOS

SUF101AM

Voltage 50 ~ 600 V 1.0 Amp Surface Mount Super Fast Recovery Rectifiers
SECOS

SUF101B

1.0AMP Surface Mount Super Fast Recovery Rectifiers
SECOS

SUF101JD

Voltage 50V ~ 600V, 1.0 Amp Surface Mount Super Fast Recovery Rectifiers
SECOS

SUF101RT

1.0 Amp Surface Mount Super Fast Rectifiers
SECOS

SUF102A

1.0AMP Surface Mount Super Fast Recovery Rectifiers
SECOS

SUF102AM

Voltage 50 ~ 600 V 1.0 Amp Surface Mount Super Fast Recovery Rectifiers
SECOS

SUF102B

1.0AMP Surface Mount Super Fast Recovery Rectifiers
SECOS