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元器件品牌
FP-504
[SIRENZA]
Wideband RF/Pulse Transformer 1-500 MHz; 宽带RF /脉冲变压器1-500 MHz的
元器件型号：
FP-504
生产厂家：
SIRENZA MICRODEVICES
描述和应用：
Wideband RF/Pulse Transformer 1-500 MHz
宽带RF /脉冲变压器1-500 MHz的
变压器 脉冲
PDF文件：
总1页 (文件大小：85K)
下载文档：
下载PDF数据表文档文件
型号参数：FP-504参数
查看货源
FP50F
High Voltage Rectifier Stacks
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156
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VMI
FP50N06L
50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs
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156
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54
INTERSIL
FP50N06L
50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs
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156
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46
INTERSIL
FP50R06KE3
EconoPIM2 module with the trench/fieldstop IGBT and EmCon3 diode
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on line
156
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71
EUPEC
FP50R06KE3BOSA1
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, MODULE-24
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156
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0
INFINEON
FP50R06KE3G
EconoPIM3 module with the trench/fieldstop IGBT and EmCon3 diode
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156
-
32
EUPEC
FP50R06W2E3
EasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC
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156
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160
INFINEON
FP50R06W2E3_B11
EasyPIM?2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode
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156
-
47
INFINEON
FP50R06W2E3BOMA1
Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel, MODULE-35
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
INFINEON
FP50R07N2E4
Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, MODULE-31
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156
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3
INFINEON
FP50R07N2E4_B11
Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, MODULE-31
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
INFINEON
FP50R07N2E4B11BOSA1
Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, MODULE-31
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: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
INFINEON
FP50R07N2E4BOSA1
Insulated Gate Bipolar Transistor
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156
-
0
INFINEON
FP50R07U1E4
Insulated Gate Bipolar Transistor,
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156
-
1
INFINEON
FP50R07U1E4BPSA1
Insulated Gate Bipolar Transistor, 75A I(C), 650V V(BR)CES, N-Channel, MODULE-35
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
INFINEON
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