SIT8008AC-22-18E [SITIME]
Low Power Programmable Oscillator;
| 型号： | SIT8008AC-22-18E |
| 厂家： | 
SiTime Corporation |
| 描述： | Low Power Programmable Oscillator |
| 文件： | 总12页 (文件大小：335K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiT8008
Low Power Programmable Oscillator
The Smart Timing Choice
Features
Applications
Any frequency between 1 MHz and 110 MHz accurate to 6 decimal
places
Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books, SSD,
GPON, EPON, etc
Operating temperature from -40°C to 85°C. Refer to SiT8918 for
higher temperature options
Ideal for high-speed serial protocols such as: USB, SATA, SAS,
Firewire, 100M / 1G / 10G Ethernet, etc.
Excellent total frequency stability as low as ±20 PPM
Low power consumption of 3.6 mA typical
Fast startup time of 5 ms
LVCMOS/HCMOS compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm
Pb-free, RoHS and REACH compliant
Electrical Characteristics[1, 2]
Parameter and Conditions
Output Frequency Range
Frequency Stability
Symbol
Min.
Typ.
Max.
Frequency Range
110 MHz
Unit
Condition
f
1
–
Frequency Stability and Aging
F_stab
-20
-25
-50
–
–
–
+20
+25
+50
PPM
PPM
PPM
Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply
voltage and load.
Operating Temperature Range
Operating Temperature Range
Supply Voltage
T_use
Vdd
-20
-40
–
–
+70
+85
°C
°C
Extended Commercial
Industrial
Supply Voltage and Current Consumption
1.62
2.25
2.52
2.7
2.97
2.25
–
1.8
2.5
2.8
3.0
3.3
–
1.98
2.75
3.08
3.3
3.63
3.63
4.5
V
V
Contact SiTime for 1.5V support
V
V
V
V
Current Consumption
Idd
3.8
3.6
3.4
–
mA
mA
mA
mA
mA
A
A
A
No load condition, f = 20 MHz, Vdd = 2.5V to 3.3V
No load condition, f = 20 MHz, Vdd = 2.5V
–
4.2
–
3.9
No load condition, f = 20 MHz, Vdd = 1.8V
OE Disable Current
Standby Current
I_OD
I_std
–
4
Vdd = 2.5V to 3.3V, OE = GND, output is Weakly Pulled Down
Vdd = 1.8V, OE = GND, output is Weakly Pulled Down
ST = GND, Vdd = 2.8V to 3.3V, Output is Weakly Pulled Down
ST = GND, Vdd = 2.5V, Output is Weakly Pulled Down
ST = GND, Vdd = 1.8V, Output is Weakly Pulled Down
–
–
3.8
–
2.6
1.4
0.6
4.3
–
2.5
1.3
–
LVCMOS Output Characteristics
Duty Cycle
DC
45
–
–
1
55
2
%
ns
All Vdds
Rise/Fall Time
Tr, Tf
Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
Vdd =1.8V, 20% - 80%
–
1.3
–
2.5
2
ns
–
ns
Vdd = 2.25V - 3.63V, 20% - 80%
Output High Voltage
Output Low Voltage
VOH
VOL
90%
–
–
Vdd
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
–
–
10%
Vdd
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Input Characteristics
Input High Voltage
VIH
VIL
70%
–
–
–
30%
100
–
Vdd
Pin 1, OE or ST
Input Low Voltage
–
–
2
Vdd
k
Pin 1, OE or ST
Input Pull-up Impedence
Z_in
87
–
Pin 1, OE logic high or logic low, or ST logic high
Pin 1, ST logic low
M
Notes:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
2. Contact SiTime for custom drive strength to drive higher or multiple load, or SoftEdge™ option for EMI reduction.
SiTime Corporation
Rev. 1.0
990 Almanor Avenue
Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised February 12, 2013
SiT8008
Low Power Programmable Oscillator
The Smart Timing Choice
2
Electrical Characteristics[1, 2] (continued)
Parameter and Conditions
Symbol
Min.
Typ.
Max.
Unit
Condition
Startup and Resume Timing
Startup Time
T_start
T_oe
–
–
–
–
–
–
5
130
5
ms
ns
Measured from the time Vdd reaches its rated minimum value
f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
Measured from the time ST pin crosses 50% threshold
Enable/Disable Time
Resume Time
T_resume
ms
Jitter
3
RMS Period Jitter
T_jitt
–
–
–
–
1.76
1.78
0.5
ps
ps
ps
ps
f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
f = 75 MHz, Vdd = 1.8V
3
RMS Phase Jitter (random)
T_phj
0.9
2
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz
f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz
1.3
Notes:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
2. Contact SiTime for custom drive strength to drive higher or multiple load, or SoftEdge™ option for EMI reduction.
Pin Description
Pin
Symbol
Functionality
Top View
[3]
H or Open : specified frequency output
L: output is high impedance. Only output driver is disabled.
Output Enable
Standby
1
2
4
3
1
OE/ST
GND
VDD
OUT
[3]
OE/ ST
H or Open : specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
[4]
2
3
4
GND
OUT
VDD
Power
Output
Power
Electrical ground
Oscillator output
[4]
Power supply voltage
Notes:
3. A pull-up resistor of <10 k between OE/ ST pin and Vdd is recommended in high noise environment.
4. A capacitor value of 0.1 µF between Vdd and GND is recommended.
Absolute Maximum
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor-
mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Min.
-65
-0.5
–
Max.
150
4
Unit
°C
V
Storage Temperature
VDD
Electrostatic Discharge
2000
260
150
V
Soldering Temperature (follow standard Pb free soldering guidelines)
Junction Temperature
–
°C
°C
–
Thermal Consideration
JC, Bottom
Package
7050
JA, 4 Layer Board (°C/W)
JA, 2 Layer Board (°C/W)
(°C/W)
30
191
97
263
199
212
222
227
5032
24
3225
109
117
124
27
2520
26
2016
26
Environmental Compliance
Parameter
Condition/Test Method
Mechanical Shock
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Rev. 1.0
Page 2 of 7
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SiT8008
Low Power Programmable Oscillator
The Smart Timing Choice
Timing Diagrams
90% Vdd, 2.5/2,8/3.3V devices
Vdd
95% Vdd, 1.8V devices
Pin 4 Voltage
Vdd
ST Voltage
50% Vdd
NO Glitch first cycle
T_start
T_resume
CLK Output
CLK Output
T_start: Time to start from power-off
T_resume: Time to resume from ST
Figure 4. Startup Timing (OE/ST Mode)
Figure 5. Standby Resume Timing (ST Mode Only)
u
Vdd
Vdd
OE Voltage
OE Voltage
50% Vdd
T_OE
50% Vdd
CLK Output
CLK Output
T_OE
HZ
T_OE: Time to re-enable the clock output
T_OE: Time to put the output drive in High Z mode
Figure 6. OE Enable Timing (OE Mode Only)
Figure 7. OE Disable Timing (OE Mode Only)
Note:
5. SiT8008 supports no runt pulses and no glitches during startup or resume.
6. SiT8008 supports gated output which is accurate within rated frequency stability from the first cycle.
Rev. 1.0
Page 3 of 7
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SiT8008
Low Power Programmable Oscillator
The Smart Timing Choice
Dimensions and Patterns
[7]
[8]
Package Size – Dimensions (Unit: mm)
Recommended Land Pattern (Unit: mm)
2.0 x 1.6 x 0.75 mm
0.65
2.0±0.05
1.5
#4
#3
#3
#4
YXXXX
#1
#2
#2
#1
0.68
0.9
2.5 x 2.0 x 0.75 mm
1.9
2.5 ± 0.05
1.00
#4
#3
#3
#4
YXXXX
#1
#2
#2
#1
0.75
1.1
3.2 x 2.5 x 0.75 mm
2.2
3.2 ± 0.05
2.1
#4
#3
#3
#4
YXXXX
#1
#2
#2
#1
0.9
1.4
5.0 x 3.2 x 0.75 mm
2.54
5.0 ± 0.05
2.39
#4
#3
#3
#4
YXXXX
#1
#2
#2
#1
1.15
1.5
Notes:
7. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
8. A capacitor value of 0.1 µF between Vdd and GND is recommended.
Rev. 1.0
Page 4 of 7
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SiT8008
Low Power Programmable Oscillator
The Smart Timing Choice
Dimensions and Patterns
[9]
[10]
Package Size – Dimensions (Unit: mm)
Recommended Land Pattern (Unit: mm)
7.0 x 5.0 x 0.90 mm
5.08
7.0 ± 0.05
5.08
YXXXX
1.4
2.2
Notes:
9. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
10. A capacitor value of 0.1 µF between Vdd and GND is recommended.
Rev. 1.0
Page 5 of 7
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SiT8008
Low Power Programmable Oscillator
The Smart Timing Choice
Ordering Information
SiT8008AC-12-18E -25.000625T
Packing Method
“T”: 12/16 mm Tape & Reel, 3ku reel
“Y”: 12/16 mm Tape & Reel, 1ku reel
“D”: 8 mm Tape & Reel, 3ku reel
“E”: 8 mm Tape & Reel, 1ku reel
Blank for Bulk
Part Family
“SiT8008”
Frequency
Revision Letter
1.000000 to 110.000000 MHz
“A” is the revision
Feature Pin
Temperature Range
“E” for Output Enable
“S” for Standby
“C” Commercial, -20ºC to 70ºC
“I” Industrial, -40ºC to 85ºC
Supply Voltage
“18” for 1.8V ±10%
“25” for 2.5V ±10%
“28” for 2.8V ±10%
“30” for 3.0V ±10%
“33” for 3.3V ±10%
“XX” for 2.25V to 3.63V
[11]
Output Driver Strength
“–” Default
Package Size
“7” 2.0 x 1.6 mm
“1” 2.5 x 2.0 mm
“2” 3.2 x 2.5 mm
“3” 5.0 x 3.2 mm
“8” 7.0 x 5.0 mm
Frequency Stability
“1” for ±20 PPM
“2” for ±25 PPM
“3” for ±50 PPM
Note:
11. Contact SiTime for custom drive strength to drive higher or multiple load, or SoftEdge™ option for EMI reduction.
[12]
Ordering Codes for Supported Tape & Reel Packing Method
Device Size
2.0 x 1.6 mm
2.5 x 2.0 mm
3.2 x 2.5 mm
5.0 x 3.2 mm
7.0 x 5.0 mm
8 mm T&R (3ku)
8 mm T&R (1ku)
12 mm T&R (3ku)
12 mm T&R (1ku)
16 mm T&R (3ku)
16 mm T&R (1ku)
D
D
D
–
E
E
E
–
–
–
–
T
–
–
–
–
Y
–
–
–
–
–
T
–
–
–
–
Y
–
–
Note:
12. For “–”, contact SiTime for availability.
Rev. 1.0
Page 6 of 7
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SiT8008
Low Power Programmable Oscillator
The Smart Timing Choice
Additional Information
Document
Description
Download Link
Tape & Reel dimension, reflow profile and other manufacturing http://www.sitime.com/component/docman/doc_download/85-manu
related info
Manufacturing Notes
Qualification Reports
Performance Reports
facturing-notes-for-sitime-oscillators
RoHS report, reliability reports, composition reports
http://www.sitime.com/support/quality-and-reliability
http://www.sitime.com/support/performance-measurement-report
Additional performance data such as phase noise, current
consumption and jitter for selected frequencies
Termination Techniques Termination design recommendations
Layout Techniques Layout recommendations
http://www.sitime.com/support/application-notes
http://www.sitime.com/support/application-notes
© SiTime Corporation 2013. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a
Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii)
unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper
installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by
SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved
or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.
CRITICAL USE EXCLUSION POLICY
BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES
OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.
SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products
does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the
sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly
prohibited.
Rev. 1.0
Page 7 of 7
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The Smart Timing Choice
Supplemental Information
The Supplemental Information section is not part of the datasheet and is for informational purposes only.
SiTime Corporation
990 Almanor Avenue
Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
The Smart Timing Choice
Silicon MEMS Outperforms Quartz
SiTime Corporation
990 Almanor Avenue
Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Silicon MEMS Outperforms Quartz Rev. 1.0
Revised January 16, 2013
Silicon MEMS Outperforms Quartz
The Smart Timing Choice
Best Reliability
Best Electro Magnetic Susceptibility (EMS)
Silicon is inherently more reliable than quartz. Unlike quartz
suppliers, SiTime has in-house MEMS and analog CMOS
expertise, which allows SiTime to develop the most reliable
SiTime’s oscillators in plastic packages are up to 54 times
more immune to external electromagnetic fields than quartz
oscillators as shown in Figure 3.
products. Figure
technology.
1 shows a comparison with quartz
Why is SiTime Best in Class:
• Internal differential architecture for best common mode
noise rejection
Why is SiTime Best in Class:
• SiTime’s MEMS resonators are vacuum sealed using an
advanced Epi-Seal™ process, which eliminates foreign
particles and improves long term aging and reliability
• Electrostatically driven MEMS resonator is more immune
to EMS
• World-class MEMS and CMOS design expertise
SiTime vs Quartz
Electro Magnetic Susceptibility (EMS)
Mean Time Between Failure (Million Hours)
- 30
- 39
- 40
500
SiTime
- 42
- 43
- 40
- 50
- 60
- 70
- 80
- 90
- 45
IDT (Fox)
38
28
16
14
SiTime
20X Better
SiTime
54X Better
Epson
- 73
TXC
Pericom
Epson
Kyocera
TXC
CW
SiLabs SiTime
600
200
400
0
Figure 1. Reliability Comparison[1]
Figure 3. Electro Magnetic Susceptibility (EMS)[3]
Best Aging
Best Power Supply Noise Rejection
Unlike quartz, MEMS oscillators have excellent long term
aging performance which is why every new SiTime product
specifies 10-year aging. A comparison is shown in Figure 2.
SiTime’s MEMS oscillators are more resilient against noise on
the power supply. A comparison is shown in Figure 4.
Why is SiTime Best in Class:
Why is SiTime Best in Class:
• On-chip regulators and internal differential architecture for
common mode noise rejection
• SiTime’s MEMS resonators are vacuum sealed using an
advanced Epi-Seal™ process, which eliminates foreign
particles and improves long term aging and reliability
• Best analog CMOS design expertise
• Inherently better immunity of electrostatically driven
MEMS resonator
Power Supply Noise Rejection
SiTime MEMS vs. Quartz Aging
SiTIme
NDK
Epson
Kyocera
SiTime MEMS Oscillator
Quartz Oscillator
5.0
4.0
3.0
2.0
1.0
0.0
10
8
8.0
SiTime
2X Better
6
4
2
0
3.5
SiTime
3X Better
3.0
1.5
10
100
1,000
10,000
10-Year
Power Supply Noise Frequency (kHz)
1-Year
Figure 4. Power Supply Noise Rejection[4]
Figure 2. Aging Comparison[2]
Silicon MEMS Outperforms Quartz Rev. 1.0
www.sitime.com
Silicon MEMS Outperforms Quartz
The Smart Timing Choice
Best Vibration Robustness
Best Shock Robustness
SiTime’s oscillators can withstand at least 50,000 g shock.
They all maintain their electrical performance in operation
during shock events. A comparison with quartz devices is
shown in Figure 6.
High-vibration environments are all around us. All electronics,
from handheld devices to enterprise servers and storage
systems are subject to vibration. Figure 5 shows a comparison
of vibration robustness.
Why is SiTime Best in Class:
Why is SiTime Best in Class:
• The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
• The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
• Center-anchored MEMS resonator is the most robust
design
• Center-anchored MEMS resonator is the most robust
design
VibrationSensitivityvs. Frequency
Differential XO Shock Robustness - 500 g
16
SiTime TXC Epson Connor Winfield
Kyocera SiLabs
14.3
100.00
10.00
1.00
14
12.6
12
10
8
SiTime
Up to 25x
Better
6
SiTime
Up to 30x
Better
3.9
4
2.9
2.5
2
0.6
0.10
0
10
100
VibrationFrequency(Hz)
1000
Kyocera Epson
TXC
CW
SiLabs SiTime
Figure 5. Vibration Robustness[5]
Figure 6. Shock Robustness[6]
Notes:
1. Data Source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
• According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
• Field strength: 3V/m
• Radiated signal modulation: AM 1 kHz at 80% depth
• Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
• Antenna polarization: Vertical
• DUT position: Center aligned to antenna
Devices used in this test:
SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz
Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz
TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz
Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz
Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz
SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz
4. 50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz
NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz
Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz
Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz
5. Devices used in this test: same as EMS test stated in Note 3.
6. Test conditions for shock test:
• MIL-STD-883F Method 2002
• Condition A: half sine wave shock pulse, 500-g, 1ms
• Continuous frequency measurement in 100 μs gate time for 10 seconds
Devices used in this test: same as EMS test stated in Note 3
7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com.
Silicon MEMS Outperforms Quartz Rev. 1.0
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The Smart Timing Choice
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below to productsupport@sitime.com
1. Does the Electrical Characteristics table provide complete information?
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_________________________________________________________________________________________________
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If “No,” please suggest improvements that we can make:
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3. Is there any application specific information that you would like to see in this document? (Check all that apply)
EMI
Termination recommendations
Shock and vibration performance
Other
If “Other,” please specify:
_________________________________________________________________________________________________
4. Are there any errors in this document?
If “Yes”, please specify (what and where):
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