DD211 [SITI]
A DRIVER, CHARGE PUMP FOR HIGH FORWARD-VOLTAGE LEDS WITH LOW SUPPLY VOLTAGE (2.0V~3.3V); 一名司机，电荷泵，低电源电压高正向电压的LED（ 2.0V 〜 3.3V ）
| 型号： | DD211 |
| 厂家： | 
SILICON TOUCH TECHNOLOGY INC. |
| 描述： | A DRIVER, CHARGE PUMP FOR HIGH FORWARD-VOLTAGE LEDS WITH LOW SUPPLY VOLTAGE (2.0V~3.3V) |
| 文件： | 总11页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DD211
Version
Issue Date
: A.001
: 2002/12/03
File Name
: SP-DD211-A.001.doc
Total Pages : 11
A DRIVER, CHARGE PUMP FOR HIGH
FORWARD-VOLTAGE LEDS WITH LOW SUPPLY
VOLTAGE (2.0V~3.3V)
新竹市科學園區展業一路九號七樓之一
SILICON TOUCH TECHNOLOGY INC
No. 9, 7F-1 Chan-Yeh Road 1 Science-Based Industrial Park
Tel 886-3-5645656 Fax 886-3-5645626
.
：
：
點晶科技股份有限公司
SILICON TOUCH TECHNOLOGY INC.
DD211
DD211
A DRIVER, CHARGE PUMP FOR HIGH FORWARD-VOLTAGE
LEDS WITH LOW SUPPLY VOLTAGE
General Description
DD211 is designed specifically for driving a high forward-voltage LED as a light source with
low supply voltage. Like a charge pump, DD211 doubles the supply voltage, but only requires one
external component, a capacitor. The built-in oscillator generates a 75% duty-cycle and
350kHz-frequency clock. DD211 also consumes little power with CMOS integrated circuits.
DD211 comes in a small die that makes packaging it within a LED module be easy. DD211’s small
package, SOT25 occupies only little area for portable device, such as a handset.
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Low supply voltage, 2.0V~3.3V
Only one external component, a capacitor needed
Built-in resistor to limit the output current
Low quiescent supply current
It is easy to package DD211 within a LED module
Applications
ꢀ
ꢀ
High forward-voltage LED Indicators’ drivers
High forward-voltage LED Back lighters for low-voltage wireless handsets
SP-DD211-A.001.doc
-1-
Version：A.001
點晶科技股份有限公司
SILICON TOUCH TECHNOLOGY INC.
DD211
Pad Descriptions
PAD NAME
DESCRIPTIONS
VDD
VSS
CP
Power
Ground
Positive Node of the External Capacitor
Negative Node of the External Capacitor
Anode of the External LED
CN
LEDA
The Block Diagram and The Application Circuit
Power
DD211
VDD
Rin
LEDA
OSC
Charge Pump
hv
VSS
Ground
CN
CP
Ground
_
Cext
+
Absolute Maximum Ratings (Unless otherwise noted, TA = 25 °C )
Characteristic
Symbol
Rating
Unit
Supply Voltage
VDD - VSS
IDD
-0.5 ~ 3.6
100
V
Output Sourcing Current
mA
°C
Operating Temperature Range
Storage Temperature Range
TOPR
-40 ~ 85
-55 ~ 150
TSTG
°C
SP-DD211-A.001.doc
-2-
Version：A.001
點晶科技股份有限公司
SILICON TOUCH TECHNOLOGY INC.
DD211
Recommended Operating Conditions
ITEM
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply Voltage
External Capacitance
VDD - VSS
Cext
2.0
-
2.5
3.3
-
V
0.10
uF
Electrical Characteristics ( TA= 25°C, VDD= 2.5V )
Characteristic
Symbols
Condition
Min.
Typ.
Max. Unit
No external LED,
Cext=0.1uF
VF of external LED=3.5V
Cext=0.1uF
Operating Current
IDD
IFON
-
-
0.75
37
mA
mA
Output Current for
‘ON’ Cycle
23
30
Time-Average
VF of external LED=3.5V
Cext=0.1uF
No external LED,
Cext=0.1uF
No external LED,
Cext=0.1uF
IFAVG
17.25
22.5
5.0
2.5
350
75
27.75 mA
Output Current
Output Voltage for
‘ON’ Cycle
Output Voltage for
‘OFF’ Cycle
Frequency of the
Internal Oscillator
Duty Cycle of the
Internal Oscillator
VLEDAON
VLEDAOFF
Freq
Dt
-
-
-
-
-
-
-
-
V
V
Cext=0.1uF
Cext=0.1uF
kHz
%
SP-DD211-A.001.doc
-3-
Version：A.001
點晶科技股份有限公司
SILICON TOUCH TECHNOLOGY INC.
DD211
Functional Descriptions
DD211 is designed to drive a high forward-voltage LED as a light source with low supply
voltage. As Fig.a shown, when the power is on, DD211 will double the supply voltage to drive the
external LED with 75% duty cycle. The built-in resistor of DD211 is used to limit the driving
current.
VLEDA
LEDA
hv
CP
CN
IF
+
_
DD211
Cext
Fig.a
Ground
VSS
VDD
Power
Ground
IFON
I
F
2VDD
VDD
VLEDA
(Without LED)
Dt
1/Freq
Test Circuits
As Fig.a shown.
SP-DD211-A.001.doc
-4-
Version：A.001
點晶科技股份有限公司
SILICON TOUCH TECHNOLOGY INC.
DD211
Typical Operating Characteristics
(Typical Operation Circuit with Cext=0.1uF, TA=25 °C, unless otherwise noted)
Fig.b Typical Power Consumption v.s. VF
Fig.c Typical IFon v.s. VF
400
350
300
250
200
150
100
50
80.00
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
VDD=2.0V
VDD=2.0V
VDD=2.5V
VDD=3.0V
VDD=3.3V
VDD=2.5V
VDD=3.0V
VDD=3.3V
0
VF( Volt)
VF( Volt)
Fig.d Typical Power Consumption v.s. Tj
For VF=2.5V
Fig.e Typical IFon v.s. Tj
For VF=2.5V
250
200
150
100
50
60.00
50.00
40.00
30.00
20.00
10.00
0.00
VDD=2.0V
VDD=2.5V
VDD=2.0V
VDD=2.5V
0
Tj( 'C)
Tj( 'C)
Fig.f Typical Power Consumption v.s. Tj
For VF=3.5V
Fig.g Typical IFon v.s. Tj
For VF=3.5V
400
350
300
250
200
150
100
50
90.00
80.00
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
VDD=2.0V
VDD=2.5V
VDD=3.0V
VDD=3.3V
VDD=2.0V
VDD=2.5V
VDD=3.0V
VDD=3.3V
0
Tj( 'C)
Tj( 'C)
SP-DD211-A.001.doc
-5-
Version：A.001
點晶科技股份有限公司
SILICON TOUCH TECHNOLOGY INC.
DD211
Typical Operating Characteristics (Continued)
(Typical Operation Circuit with Cext=0.1uF, TA=25 °C, unless otherwise noted)
Fig.h Typical Power Consumption v.s. Tj
For VF=4.5V
Fig.i Typical IFon v.s. Tj
For VF=4.5V
300
250
200
150
100
50
60.00
50.00
40.00
30.00
20.00
10.00
0.00
VDD=2.5V
VDD=3.0V
VDD=3.3V
VDD=2.5V
VDD=3.0V
VDD=3.3V
0
Tj( 'C)
Tj( 'C)
Fig.j Typical Power Consumption v.s. Tj
For VF=5.5V
Fig.k Typical IFon v.s. Tj
For VF=5.5V
160
30.00
25.00
20.00
15.00
10.00
5.00
140
120
100
80
VDD=3.0V
VDD=3.3V
VDD=3.0V
VDD=3.3V
60
40
20
0.00
0
Tj( 'C)
Tj( 'C)
SP-DD211-A.001.doc
-6-
Version：A.001
點晶科技股份有限公司
SILICON TOUCH TECHNOLOGY INC.
DD211
(494.9, 532.9)
LEDA
DIE CONFIGURATION
VDD
(284.15, 452.2) (414.15, 452.2)
CN
CP
VSS
(284.15, 182.6) (414.2, 182.6)
(142.95, 124.05)
(0.0, 0.0)
Unit: um
ꢀDie Size: 494.9um * 532.9um
ꢀWidth of Cut Line: 100um
ꢀDie Thickness: 12mil(=300um)
ꢀPad Size: 100um * 100um
SP-DD211-A.001.doc
-7-
Version：A.001
點晶科技股份有限公司
SILICON TOUCH TECHNOLOGY INC.
DD211
* Note: SiTI reserves the right to improve the device geometry and manufacturing
processes without prior notice. Though these improvements may result in
slight geometry changes, they will not affect die electrical limits, pad
layouts.
WAFER INFORMATION
Material: Silicon with P-Substrate
Diameter: 6 inches(≒15cm)
Thickness: 12 mils(≒300um)
Pin Assignment (SOT-25)
CN
VSS
CP
LEDA
VDD
Pin NO.
Pin Name
CN
Description
1
2
3
4
5
Connected to Negative node of the external capacitor
VSS
Ground
VDD
Power
LEDA
CP
Connected to Anode of the external LED
Connected to Positive node of the external capacitor
SP-DD211-A.001.doc
-8-
Version：A.001
點晶科技股份有限公司
SILICON TOUCH TECHNOLOGY INC.
DD211
Package Specifications (SOT-25)
C
E
H
L
e
θ1
D
A
A2
A1
b
DIMENSIONS IN MILLIMETERS
SYMBOL
MIN
NOM
MAX
A
1.00
0.00
1.10
－
1.30
0.10
A1
A2
b
0.70
0.35
0.10
2.70
1.40
－
0.80
0.90
0.50
0.25
3.10
1.80
－
0.40
C
D
E
e
0.15
2.90
1.60
1.90(TYP)
H
L
2.60
0.37
2.80
3.00
－
－
θ1
1°
5°
9°
SP-DD211-A.001.doc
-9-
Version：A.001
點晶科技股份有限公司
SILICON TOUCH TECHNOLOGY INC.
DD211
The products listed herein are designed for ordinary electronic applications, such
as electrical appliances, audio-visual equipment, communications devices and so on.
Hence, it is advisable that the devices should not be used in medical instruments,
surgical implants, aerospace machinery, nuclear power control systems,
disaster/crime-prevention equipment and the like. Misusing those products may directly
or indirectly endanger human life, or cause injury and property loss.
Silicon Touch Technology, Inc. will not take any responsibilities regarding the
misusage of the products mentioned above. Anyone who purchases any products
described herein with the above-mentioned intention or with such misused applications
should accept full responsibility and indemnify. Silicon Touch Technology, Inc. and its
distributors and all their officers and employees shall defend jointly and severally against
any and all claims and litigation and all damages, cost and expenses associated with such
intention and manipulation.
SP-DD211-A.001.doc
-10-
Version：A.001
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