APN1001 [SKYWORKS]

Circuit Models for Plastic Packaged Microwave Diodes; 电路模型塑料封装微波二极管
APN1001
型号: APN1001
厂家: SKYWORKS SOLUTIONS INC.    SKYWORKS SOLUTIONS INC.
描述:

Circuit Models for Plastic Packaged Microwave Diodes
电路模型塑料封装微波二极管

二极管 微波
文件: 总5页 (文件大小:191K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
APPLICATION NOTE  
APN1001: Circuit Models for  
Plastic Packaged Microwave Diodes  
Abstract  
This paper reports on the measurement and establishment of  
circuit models for SOT-23 and SOD-323 packaged diodes.  
Results indicate that the 1.5 nH estimate for the SOT-23 is a  
useful result, as is 1.2 nH for SOD-323 single packaged diodes.  
It was also determined that the effective inductance of the  
SOT-23 may be reduced to approximately 0.4 nH by adding a  
second bond wire and modifying the microstrip line. Other lead  
configurations, including parallel bond wires and common  
cathode configurations, were also studied.  
SOT-23  
SOD-323  
Figure 1. Diode Package Styles  
Package Modeling  
Network Analysis  
Introduction  
To create a high-frequency device model S-parameter, measure-  
ments were taken over a wide frequency band so that resonance  
and other high order effects would be included in the measure-  
ments. This procedure utilizes an HP 8510C vector network  
analyzer. The package under test was inserted into an Inter-  
Continental Microwave test fixture as a series connected  
element. This fixture uses a Thru-Reflect-Line calibration  
procedure to produce accurate calibration and assures a  
reference plane at the device under test.  
Discrete, low-cost, surface mount semiconductor diodes are  
attractive choices for UHF and microwave applications where  
package parasitic may have a significant impact on performance.  
The most common package styles are the SOT-23 and the  
SOD-323 (Figure 1) which were neither designed nor intended  
for RF service. A primary limitation to their high-frequency  
performance, particularly in PIN diode shunt connected switches,  
is parasitic package inductance, which limits high-frequency  
isolation. The model information available from vendors of these  
devices has been generally limited to estimates of inductance,  
typically 1.5 nH, for single junction SOT-23 diodes. Establishing  
a better model will enable circuit designers to better predict  
performance and possibly give the manufacturer alternative  
designs to reduce package parasitic effects.  
Using this methodology, a circuit model was generated for each  
of the devices as shown in Figures 2 and 3. These models pro-  
duce very good correlation between the measured and simulated  
performance as shown in Figure 4.  
L = 0.05 nH  
C = 0.01 pF  
L = 0.65 nH  
L = 0.7 nH  
C = 0.13 pF  
C = 0.015 pF  
C = 0.13 pF  
Figure 2. SOT-23 Circuit Model  
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com  
200311 Rev. A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • July 21, 2005  
1
APPLICATION NOTE • APN1001: CIRCUIT MODELS FOR PLASTIC PACKAGED MICROWAVE DIODES  
L = 0.05 nH  
C = 0.02 pF  
L = 0.57 nH  
L = 0.57 nH  
C = 0.02 pF  
C = 0.2 pF  
C = 0.2 pF  
Figure 3. SOD-323 Circuit Model  
0
0
Simulated  
Return Loss  
Measured  
Isolation  
Simulated  
Measured  
Isolation  
-20  
Center Conductor  
-20  
-40  
Return Loss  
Ground  
-40  
0.1  
10.0  
10.0  
0.1  
Frequency (GHz)  
Frequency (GHz)  
Figure 4. Measurement vs. Model Simulation  
of a SOT-23 Package  
Figure 5. SOT-23 Validation:  
Simulation vs. Measurement  
Impedance Measurements  
Alternative SOT-23 Designs for  
Lower Inductance  
To reduce the total inductance of the SOT-23 package, alternative  
wire bonding schemes were studied. Figure 6 shows four  
bonding wire designs considered in this study. The measured  
inductance of these bonding schemes are shown on Table 1.  
The HP 4291A Impedance Analyzer, an instrument based on mea-  
suring the vector V/I with coverage from 1 MHz–1.8 GHz, was  
also utilized to characterize inductance of the packages under  
consideration. Measurements were taken on a group of PIN  
diodes that were forward biased to low values of forward resis-  
tance. The inductance values derived from these measurements  
are shown in Table 1 and compare well with the values derived  
from network analysis. The advantage of the direct impedance  
measurement is the capability of a quick measurement without  
the necessity of hard bonding the device to a substrate.  
Single  
Parallel Wires  
Dual Contact  
Validation of Simulated Model  
Validation of the model was performed by placing the diode into a  
test circuit that simulates a shunt connected switch. The test cir-  
cuit was constructed using a Duriod microstrip board and the  
device was placed as shown in Figure 5. This provided a different  
operating environment because not only was the diode connected  
differently, but the microstrip insulator had a different dielectric  
constant.  
Common Cathode  
Figure 6. SOT-23 Configurations  
The measured performance of this circuit was imported into the  
circuit simulator and compared to a simulation using the circuit  
model. Figure 6 shows good validation of the network analyzer  
generated model.  
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com  
July 21, 2005 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • 200311 Rev. A  
2
APPLICATION NOTE • APN1001: CIRCUIT MODELS FOR PLASTIC PACKAGED MICROWAVE DIODES  
The single wire SOT-23 diode with 1.5 nH inductance will per-  
transmission line as shown in Figure 7, then the effective induc-  
tance is reduced to below 0.4 nH and the isolation is increased to  
20 dB at 900 MHz. Figure 7 shows a plot of the measured isola-  
tion of the dual bond wire package versus frequency to 4 GHz. A  
plot of an inductance of 1.5 nH is shown as a reference.  
form with 10.1 dB isolation at 900 MHz as a shunt connected  
switch. The inductance is reduced to 1.2 nH if a parallel bond  
wire is attached to the diode contact. This will increase the isola-  
tion to 11.6 dB. A further reduction of inductance may be  
obtained by adding a second diode chip in a common cathode  
configuration. This reduces the inductance to 0.84 nH resulting in  
an increase in isolation to 14.6 dB.  
Table 1 shows a summary of the effective package inductance  
values for the SOD-323 and SOT-23 packaged diodes with alter-  
native wiring configurations using the measurement techniques  
described.  
Since two junctions are employed, in the common cathode alter-  
native, the capacitance is doubled under reverse bias. The  
consequence may be an adverse effect on insertion loss. The  
inductance of the dual bond wire design is similar to the common  
cathode design resulting in similar performance. But, if the  
package is inserted in the microstrip circuit with a gap in the  
0
1.5 nH  
-10  
-20  
w/o Gap (0.83 nH)  
w/Gap (0.32 nH)  
Input  
Output  
Gap  
-30  
-40  
-50  
Ground  
0
4
2
Frequency (GHz)  
Figure 7. SOT-23 Dual Bond Wire With and Without a Gap  
S-Parameter Model  
(nH @ 1 GHz)  
S-Parameter Validation  
(nH @ 1 GHz)  
HP 4291A Inductance  
(nH)  
Package  
SOT-23  
SOT-23  
SOT-23  
SOT-23  
SOT-23  
SOT-323  
Configuration  
Single junction  
Dual no gap  
1.45  
1.2  
1.5  
0.9  
0.4  
1.5/1.7  
Dual gap  
0.5  
Parallel bonds  
Common cathode  
Single junction  
1.2  
0.84  
1.2  
1.1  
1.19  
Table 1. Summary of Package Inductance Values  
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com  
200311 Rev. A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • July 21, 2005  
3
APPLICATION NOTE • APN1001: CIRCUIT MODELS FOR PLASTIC PACKAGED MICROWAVE DIODES  
Conclusion  
Reference  
As a result of this effort, accurate and concise microwave models  
are now available for commonly used, low-cost, surface mount,  
SOT-23 and SOD-323 packaged diodes. The measurement  
methodology utilized de-imbedding techniques valid at frequen-  
cies through 10 GHz. This material will assist design engineers  
to design and predict circuit performance using these popular  
devices.  
R.W. Waugh and D. Gustedt, “Low Cost Surface Mount Power  
Limiters,” Proceedings RF EXPO WEST,  
March 1992, pp. 19-40.  
© Skyworks Solutions, Inc., 1999. All rights reserved.  
In addition, it was demonstrated that the inductance of the  
SOT-23 may be significantly reduced by modifying both the  
internal package wiring and the microstrip transmission line.  
This further improves the frequency response of the package.  
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com  
July 21, 2005 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • 200311 Rev. A  
4
APPLICATION NOTE • APN1001: CIRCUIT MODELS FOR PLASTIC PACKAGED MICROWAVE DIODES  
Copyright © 2002, 2003, 2004, 2005, Skyworks Solutions, Inc. All Rights Reserved.  
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Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com  
200311 Rev. A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • July 21, 2005  
5

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