SMV1213-040LF [SKYWORKS]
Variable Capacitance Diode, S Band, 19pF C(T), 16V, Silicon, Hyperabrupt, GREEN PACKAGE-2;
| 型号： | SMV1213-040LF |
| 厂家： | 
SKYWORKS SOLUTIONS INC. |
| 描述： | Variable Capacitance Diode, S Band, 19pF C(T), 16V, Silicon, Hyperabrupt, GREEN PACKAGE-2 二极管 变容二极管 |
| 文件： | 总12页 (文件大小：1249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Applications
• High isolation
switching
Miniature 0402 Surface Mount
Technology Packaged RF Diodes
• Detection
• Mixing
• Voltage control
• Tuning
Skyworks offers a variety of 0402 surface mount technology (SMT) diodes including
PIN diodes for switch and attenuator applications, limiter diodes for receiver protection
applications, Schottky diodes for detector and mixer applications and tuning varactor diodes
for VCO, voltage tuned filters and phase shifter applications. These small form factor devices
offer low parasitic inductance and low thermal impedance, making them ideal for a variety
of markets including WLAN, WiMAX, cellular handset, cellular infrastructure, automotive,
CATV/Satcom, smart energy, medical, military, RFID, and test and measurement.
• Phase shifting
• Receiver protection
Features
• Low parasitic
inductance 0.45 nH
PIN Diodes for Switch and Attenuator Applications
Part Number
Feature/Application
High Isolation Switching
Fast Switching/High Isolation
High Isolation
Characteristics
Very Low Capacitance (0.13 pF), Isolation 40 dB
Low Capacitance, Fast Switching
Low Capacitance
• Low thermal
impedance 50° C/W
SMP1345-040LF
SMP1340-040LF
SMP1321-040LF
SMP1320-040LF
SMP1352-040LF
SMP1322-040LF
SMP1302-040LF
• Small form factor
1.0 x 0.6 x 0.46 mm
• Frequency range
10 MHz–12 GHz
Moderate Power Switching
High Power Switching
High Isolation Switching
Attenuator
Low Capacitance, Low Resistance
Low Distortion
Low Resistance (0.5 W Typ.)
Low Distortion, Low Drive Current
Limiter Diodes for Receiver Protection Applications
Part Number
Feature/Application
Characteristics
Low Capacitance, Low Threshold Level
Fast Recovery Time (5 ns Typ.)
SMP1330-040LF
Skyworks Green™ products are compliant to all applicable materials legislation and are halogen-free. For additional information, refer to Skyworks Definition
of Green™, document number SQ04-0074.
Schottky Diodes for Detector and Mixer Applications
Part Number
Feature/Application
High Sensitivity Detector
Characteristics
Low Barrier Height, Low Capacitance
Lowest Barrier Height, Low Capacitance
Medium Barrier Height
SMS7621-040LF
SMS7630-040LF
SMS3922-040LF
SMS3923-040LF
SMS3924-040LF
SMS3925-040LF
Most Sensitive Detector
Higher Input Power
Higher Input Power
Medium Barrier Height
High Sensitivity Detector
High Sensitivity/High Input Power
Medium/High Barrier, High Voltage Breakdown
High Barrier Height
Skyworks Green™ products are compliant to all applicable materials legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074.
Tuning Varactor Diodes for VCO, Voltage Tuned Filters, and Phase Shifter Applications
Part Number
Feature/Application
Low Series Resistance, High Tuning Range
High Tuning Range
Characteristics
SMV1213-040LF
SMV1248-040LF
SMV1253-040LF
SMV1255-040LF
SMV1430-040LF
SMV2019-040LF
SMV1231-040LF
SMV1232-040LF
SMV1233-040LF
SMV1234-040LF
SMV1235-040LF
SMV1236-040LF
SMV1405-040LF
SMV1705-040LF
SMV1247-040LF
SMV1763-040LF
SMV1249-040LF
Capacitance (19 pF @ 1.0 V, 5.5 pF @ 4.0 V), RS (1.4 Ω)
Capacitance (11.3 pF @ 1.0 V, 1.57 pF @ 4.0 V), RS (2.0 Ω)
Capacitance (33.6 pF @ 1.0 V, 4.13 pF @ 4.0 V), RS (0.8 Ω)
Capacitance (34.0 pF @ 1.0 V, 5.8 pF @ 4.0 V), RS (0.8 Ω)
Capacitance (0.91 pF @ 1.0 V, 0.60 pF @ 4.0 V), RS (2.7 Ω)
Capacitance (1.43 pF @ 1.0 V, 0.23 pF @ 20.0 V), Q (500)
Capacitance (1.49 pF @ 1.0 V, 0.71 pF @ 4.0 V), RS (2.9 Ω)
Capacitance (2.52 pF @ 1.0 V, 1.18 pF @ 4.0 V), RS (1.2 Ω)
Capacitance (3.34 pF @ 1.0 V, 1.53 pF @ 4.0 V), RS (1.2 Ω)
Capacitance (6.57 pF @ 1.0 V, 2.87 pF @ 4.0 V), RS (0.8 Ω)
Capacitance (11.56 pF @ 1.0 V, 5.05 pF @ 4.0 V), RS (0.6 Ω)
Capacitance (16.95 pF @ 1.0 V, 7.50 pF @ 4.0 V), RS (0.35 Ω)
Capacitance (2.8 pF @ 0 V, 0.56 pF @ 30.0 V), Q (3200)
Capacitance (18.49 pF @ 1.0 V, 6.13 pF @ 4.0 V), RS (0.3 Ω)
Capacitance (7 pF @ 0.3 V, 0.7 pF @ 4.7 V), Q (1500)
Capacitance (6.7 pF @ 0.5 V, 2.6 pF @ 1.5 V), RS (0.7 Ω)
Capacitance (31 pF @ 0.3 V, 2.6 pF @ 4.7 V), CTR (12:1)
High Capacitance, Low Series Resistance
Low Series Resistance, High Tuning Range
Low Capacitance, Abrupt Junction
High Capacitance Ratio at Low Voltage (CT1/CT3 = 1.55 Typ.)
High Capacitance Ratio at Low Voltage (CT1/CT3 = 1.65 Typ.)
High Capacitance Ratio at Low Voltage (CT1/CT3 = 1.70 Typ.)
High Capacitance Ratio at Low Voltage (CT1/CT3 = 1.70 Typ.)
Low Series Resistance, High Tuning Range
Low Series Resistance, High Tuning Range
Low Series Resistance, High Tuning Range
Low Capacitance, High Q, Abrupt Junction
Low Series Resistance, High Tuning Range
Low Capacitance, High Q
Low Capacitance, Low Series Resistance
Wide Tuning Range
Switching Applications
PIN Diodes
PIN diodes are some of the most widely used diodes in
the world and range in applications from RF switching
in satellite television receiver low noise block converters
(LNB), to automotive remote garage door openers,
to land mobile radio transceivers and cable television
automatic level controls.
The circuit below shows a pair of PIN diodes used to
form a single pole, double throw switch. In this switch, a
positive control current typically of the order of 10 mA is
applied to one of the bias inputs to place that side of the
switch into its low insertion loss state, while a negative
bias voltage is applied to the other bias input, forcing
the diode on that side of the switch into its maximum RF
impedance state to produce high isolation on that side of
the switch.
PIN diodes are three layer diodes, comprised of a heavily
doped anode (the “P” layer) and a heavily doped cathode
(the “N” layer) separated by a virtually undoped intrinsic
layer (the “I” layer). Under forward bias, charge carriers
from the P and the N layers are forced into the I layer,
which reduces its RF impedance. When a reverse bias
voltage is applied across the PIN diodes, all free charge
carriers are removed from the I layer, thereby causing its
RF impedance to increase. This variable RF impedance
versus DC, or low frequency bias signal, allows the diode
to be used in RF switching circuits in which the PIN
diode is either heavily forward-biased or reverse biased.
In RF attenuation circuits, the PIN diode is utilized as a
continuously-variable RF resistance by controlling the
magnitude of the DC bias current through the diode.
Many other switching circuit variations exist. Please refer
to “Design with PIN Diodes” available on our Web site at
www.skyworksinc.com for more information.
RF
Common
ICTRL1
ICTRL2
L1
L3
C2
C1
C3
J1
J2
D1
SMP1345-040LF
D2
SMP1345-040LF
L2
RF
Common
ICTRL1
ICTRL2
Typical SPDT Switch
Attenuation Applications
L1
L3
C2
A resistive attenuator can be built utilizing one or more
PIN diodes. In this type of circuit, the RF resistance of the
PIN diode is adjusted to a desired value by varying the
magnitude of the DC bias current applied to the diode.
This resistance produces attenuation.
C1
C3
J1
J2
D1
D2
L2
Wide Bandwidth Single Pole Double Throw Switch
The diagrams below show an attenuator that utilizes
three PIN diodes. Many other PIN diode circuit
configurations are also possible. Please refer to “Design
with PIN Diodes” available on our Web site at
www.skyworksinc.com for more information.
RF
Common
Bias1
Bias 2
CBLOCK
CFILTER
CFILTER
RF
Choke
RF
Choke
RF
Choke
SMP1345
-040LF
SMP1345
-040LF
RF #1
RF #2
CBLOCK
C BLOCK
SMP1321-040LF
SMP1321-040LF
High Isolation PIN Diode Single Pole Double Throw Switch
100
10
1
R3
R1
R2
SMP1321
SMP1320
D3(RS3)
RF Input
RF Output
D2(RS2)
D1(RS1)
0.1
0.1
1
10
100
100
100
Forward Current (mA)
Series Resistance vs. Forward Current
Pi Attenuator
100
10
1
100
10
1
SMP1345
SMP1340
SMP1322
0.1
0.1
1
10
0.1
0.01
0.1
1
10
100
Forward Current (mA)
Forward Current (mA)
Series Resistance vs. Forward Current
Series Resistance vs. Forward Current
1000
100
10
1000
100
10
SMP1302
SMP1352
1
1
0.1
0.1
0.01
0.1
1
10
Forward Current (mA)
Series Resistance vs. Forward Current
0.01
0.1
1
10
100
Forward Current (mA)
Series Resistance vs. Forward Current
PIN Diodes for Switch and Attenuator Applications
Part Number
Product Description
High Isolation Switching PIN Diode
Key Features
Very Low Capacitance 0.14 pF, Isolation 40 dB
Low Capacitance, Low Series Resistance
Low Capacitance, Series Pair
SMP1345-040LF
SMP1340-040LF
SMP1321-040LF
SMP1320-040LF
SMP1352-040LF
SMP1322-040LF
SMP1302-040LF
Fast Switching/High Isolation PIN Diode
High Isolation (LNB/Multiswitch) PIN Diode
Moderate Power Handling
High Power Switching
Low Capacitance, Low Resistance
Lower Distortion
High Isolation Switching
Low Resistance (0.5 W Typ.)
Attenuator
Low Distortion/Low Drive Current
Skyworks Green™ products are compliant to all applicable materials legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074.
Electrical Specifications
RS
Max. RS
IF = 10 mA
RS
Typ. Carrier
Lifetime
IF = 10 mA
(ns)
Max. VR
IR = 10 µA
(V)
CT
CT
VR = 5 V
(pF)
CT
Typ. VF
IF = 10 mA
(V)
IF = 1 mA
IF = 100 mA
VR = 30 V
(pF)
VR = 20 V
(pF)
F = 100 MHz F = 100 MHz F = 100 MHz
Part Number
SMP1345-040LF
SMP1340-040LF
SMP1321-040LF
SMP1320-040LF
SMP1352-040LF
SMP1322-040LF
SMP1302-040LF
(W)
(W)
(W)
50
50
–
0.20 Max.
–
0.89
0.85
0.85
0.85
0.80
0.85
0.80
3.5 Typ.
–
2.0
–
100
100
400
400
1000
400
700
–
0.30 Max.
–
1.2
–
100
50
0.025 Max.
0.25 Max.
–
–
–
–
–
–
–
3.0 Typ.
2.0 Typ.
15 Max.
1.5 Max.
20 Max.
2.0
–
–
0.9
–
200
50
0.30 Max.
2.8
1.35 Max.
–
1.0 Max.
0.30 Max.
–
–
0.5 Typ,
3.0
200
1.5 Max.
Limiter Output
Pin-IL
Limiter Diodes
30
20
10
The PIN limiter diode can be described as an incident
power controlled, variable resistor. In the case when no
large input signal is present, the impedance of the limiter
diode is at its maximum, thereby producing minimum
insertion loss, typically less than 0.5 dB. The presence of a
large input signal temporarily forces the impedance of the
diode to a much lower value, producing an impedance
mismatch which reflects the majority of the input signal
power back towards its source.
Limiting
Operation
Low Insertion
Loss Operation
1 dB
0
Threshold Level
20 30
-10
-10
0
10
Input Power (dBm)
DC
Block
DC
Block
Input
Output
Output Power vs. Input Power for a Single Stage Limiter
RF
Choke
SMP1330-040LF
A Single Stage Limiter
Limiter Diodes for Receiver Protection Applications
Part Number
Feature/Application
Low Capacitance, Low Threshold Level
Characteristics
Fast Recovery Time (5 ns Typ.)
SMP1330-040LF
Skyworks Green™ products are compliant to all applicable materials legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074.
Electrical Specifications
VB IR = 10 µA
(V)
I Region Thickness
(µm) Nominal
CT (pF) 0 V,
F = 1 MHz
CT (pF) 0 V,
F = 1 GHz
RS IF = 10 mA
F = 100 MHz (W)
Carrier Lifetime TL
(ns) IF = 10 mA
Part Number
SMP1330-040LF
20–50
2
0.7 Typ., 1.0 Max.
0.7 Typ.
1.25 Typ., 1.9 Max.
4.0 Typ.
SMS7621-040LF Schottky Detector Diode
Schottky Diodes
Schottky diodes are optimized for use in detector and
mixer applications at frequencies from below 10 MHz to
higher than 20 GHz. Skyworks’ family of products include
medium, low and zero bias detector (ZBD) barrier height
Schottky junctions with low junction capacitance and low
series resistance.
The SMS7621-040LF combines low capacitance
(nominally 0.2 pF) and low barrier height to produce a
detector diode with excellent sensitivity.
SMS7621-040LF
Detected
RF Input
Voltage Output
100pF
50 Ω
1k Ω
Schottky junctions are formed by depositing specific
metals on either n-doped silicon (low or medium barrier
height) or on p-doped silicon (ZBD barrier height). The
characteristics of the diode are determined by the type of
metal deposited on the semiconductor material, as well
as the type of dopant in the semiconductor layer, among
other parameters.
Broadband Detector Circuit
0.6
0.5
0.4
0.3
0.2
0.1
0
SMS7621-040LF
SMS7630-040LF
Schottky
Detector
Diode
Detected
RF Input
Output
Filter
Resistor
Filter
Capacitor
RF
Choke
Single Schottky Diode Detector
0
2
4
6
8
10 12 14 16 18 20
Forward Current (mA)
Forward Voltage vs. Forward Current
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
SMS3922
SMS3923
0.10
0.05
0
0.2
0.1
0
0
2
4
6
8
10 12 14 16 18 20
0
5
10
15
20
25
30
35
Forward Current (mA)
Forward Current (mA)
Forward Voltage vs. Forward Current
Forward Voltage vs. Forward Current
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
SMS3925-040LF
SMS3924-040LF
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
Forward Current (mA)
Forward Current (mA)
Forward Voltage vs. Forward Current (TA = 25°C)
Forward Voltage vs. Forward Current (TA = 25°C)
Schottky Diodes for Detector and Mixer Applications
Part Number
SMS7621-040LF
SMS7630-040LF
SMS3922-040LF
SMS3923-040LF
SMS3924-040LF
SMS3925-040LF
Feature/Application
Characteristics
Low Barrier Height and Low Capacitance
Lowest Barrier Height, Low Capacitance
Medium Barrier Height
High Sensitivity Detector
Most Sensitive Detector
Higher Input Power
Higher Input Power
Medium Barrier Height
High Sensitivity/High Input Power
High Sensitivity
Medium/High Barrier Height
High Barrier Height
Electrical Specifications
Typ. RT
VB
IR = 10 µA
(V)
Max. VF
IF = 1 mA
(mV)
Max. CT
VR = 0 V
(pF)
IF = 5 mA
F = 100 MHz
(W)
Typ. RV
(W)
Part Number
SMS7621-040LF
SMS7630-040LF
SMS3922-040LF
SMS3923-040LF
SMS3924-040LF
SMS3925-040LF
*IR = 100 µA
2 Min.
1 Min.*
8 Min.
320
240
340
370
550
650
0.25
0.35
1.03
1.23
2.25
0.42
18
–
5k
–
–
9
20 Min.
70 Min.
40 Min.
10
–
7 @ 10 mA
10 @ 10 mA
–
–
Tuning Varactor Diodes
RF
In
RF
Out
Skyworks series of silicon tuning varactor diodes are used
as the electrical tuning elements in voltage controlled
oscillators (VCOs), voltage variable analog phase shifters
and voltage tuned filters (VTFs). This family of diodes
includes abrupt junction tuning varactors, useful for low
loss, narrow band circuits, and hyperabrupt junction
varactors, useful for wide bandwidth VCOs and VTFs as
well as wide phase range variable phase shifters.
VCONTROL
VCONTROL
Phase Shifter Diagram
Tuning varactors are PN junction diodes. The depletion
region that forms at the junction of the diode acts as a
nearly-ideal insulator, which separates the highly-doped
anode from the cathode layer, thus forming a parallel
plate capacitor. The thickness of the depletion layer can be
increased by applying a reverse bias voltage to the diode.
VCONTROL
RF Input
RF Output
The cathode layer’s doping profile is very carefully
designed to produce a tightly controlled capacitance
versus reverse bias voltage performance characteristic.
The cathode layer of an abrupt junction diode has
uniform dopant concentration throughout its thickness,
which results in a low series resistance and moderately
large change in capacitance versus bias voltage. By
contrast, the doping concentration of cathode layer of
hyperabrupt varactor diode is designed to change by
several orders of magnitude, typically over the depth of
a few microns. This non-constant dopant concentration
versus depth of the hyperabrupt diode’s cathode layer
produces a much larger available change in capacitance
versus reverse voltage, necessary for wide bandwidth or
phase shift range applications.
Resonators
Voltage Tuned Filter Diagram
SMV1249-040LF
SMV1213-040LF
SMV1248-040LF
SMV1253-040LF
SMV1255-040LF
SMV1705-040LF
90
80
70
60
50
40
30
20
10
VCC
0
0
Varactor Common
Cathode Pair
2
4
6
8
10 12 14 16 18 20
Reverse Voltage (V)
Capacitance vs. Reverse Voltage
RF
Choke
C2
VR
L
Typical Voltage Controlled Oscillator with a Common
Cathode Pair of Tuning Varactors
SMV1247-040LF
SMV1763-040LF
SMV2019-040LF
SMV1231-040LF
SMV1232-040LF
SMV1233-040LF
SMV1234-040LF
SMV1235-040LF
SMV1236-040LF
SMV1430-040LF
SMV1405-040LF
3.0
2.5
2.0
1.5
1.0
0.5
0
30
25
20
15
10
5
0
0
5
10
Reverse Voltage (V)
Capacitance vs. Reverse Voltage
15
20
25
30
0
5
10
Reverse Voltage (V)
Capacitance vs. Reverse Voltage
15
20
25
30
Tuning Varactor Diodes for VCO, Voltage Tuned Filters, and Phase Shifter Applications
Min. Reverse
Breakdown
Voltage, VR
IR = 10 µA
(V)"
Typ. Total
Capacitance3, CT
VR = 1 V
Typ. Total
Capacitance3, CT
VR = 4 V
Typ. Total
Capacitance3, CT
VR = 8 V
Max.
Series
Resistance, RS
Min. Total
Capacitance
Ratio
Capacitance
Ratio Range
(V)
Part Number
(pF)
(pF)
(pF)
(Ω)
SMV1213-040LF
SMV1248-040LF
SMV1253-040LF
SMV1255-040LF
SMV1430-040LF
SMV2019-040LF
SMV1231-040LF
SMV1232-040LF
SMV1233-040LF
SMV1234-040LF
SMV1235-040LF
SMV1236-040LF
SMV1405-040LF
SMV1705-040LF
SMV1247-040LF
SMV1763-040LF
SMV1249-040LF
12
15
15
15
30
22
15
15
15
15
15
15
30
12
15
10
15
19.13
11.31
33.69
39.95
0.91
3.87
1.57
4.63
5.79
0.6
2.4
2
1.0 to 2.5
0.3 to 4.7
0.3 to 4.7
0.3 to 4.7
0 to 30
1.4 Typ. @ 3.0 V
3.3 @ 3.0 V
1.21
3.4
10.8
11
1.4 @ 3.0 V
3.94
0.47
0.39
0.43
0.71
0.93
1.75
2.91
4.49
0.97
4.08
0.64
1.15
2.03
11
1.3 @ 3.0 V
3.8
2.1
1.45
1.5
1.5
1.6
1.6
1.6
2.8
2.8
9.5
2.3
11.0
2.7 Typ. @ 4.0 V
Q @ 4 V = >500
2.9 @ 3.0 V
1.43
0.75
0.71
1.18
1.53
2.87
4.99
7.19
1.26
6.13
0.77
1.44
2.72
4 to 20
1.49
1 to 3.0
2.52
1 to 3.0
1.5 @ 3.0 V
3.34
1 to 3.0
1.2 @ 3.0 V
6.57
1.0 to 3.0
1.0 to 3.0
1.0 to 3.0
0 to 30 V
1.0 to 4.0
0.3 to 4.7
0.5 to 2.5
0.3 to 4.7
1.2 @ 3.0 V
11.67
17.02
1.95
0.6 @ 3.0 V
0.5 @ 3.0 V
0.8 @ 4.0 V
18.49
4.37
0.32 Typ. @ 1.0 V
2.6 Typ. @ 3.0 V
0.7 Typ. @ 1.0 V
1.2 Typ. @ 3.0 V
5.13
18.18
0402 Package Information
0.650
0.325
PCB Pad Metalization 2X
PCB Solder Mask Opening
1.000
2X 0.25 0.05
0.475
0.350
0.475
Cathode
Indicator
Bottom View
Top View
1.200
Cathode
Terminal
Part Outline
0.650
0.750
Side View
All dimensions in millimeters
S1892
All measurements in millimeters
S1997
Package Dimensions
PCB Layout Footprint
4.00 0.10
Cathode
Indicator
∅1.ꢀꢀ 0.0ꢀ ꢁ(0ꢂ
2.00 0.0ꢀ
0.20
A
1.7ꢀ 0.10
∅0.40 0.0ꢀ ꢁ(1ꢂ
0.47 0.0ꢀ ꢁꢃoꢂ
A
B
B
2.00 0.0ꢀ
A
0.70 0.0ꢀ ꢁA0ꢂ
Notes:
1. Carrier tape: black conductive polycarbonate.
2. Cover tape: transparent conductive material.
3. Cover tape size: 5.4 mm width.
4. ESD surface resistivity is ≥1 x 104 ~ ≤ 1 x 108 Ohms/square.
5. All dimensions are in millimeters.
B
S1922
Tape and Reel Dimensions
Through our Green Initiative™, we are committed to manufacturing products that comply with global
government directives and industry requirements.
Green Initiative™
Skyworks is continuously innovating RF, analog and mixed-signal ICs. For the latest product introductions and
information about Skyworks, visit our Web site at www.skyworksinc.com
For additional information on our broad overall product portfolio, please contact your local sales office or email us at
sales@skyworksinc.com.
Skyworks Solutions, Inc.
20 Sylvan Road, Woburn, MA 01801
USA: (781) 376-3000 • Asia: 886 2 2735 0399
Europe: 33 (0)1 43548540 • Fax: (781) 376-3100
Email: sales@skyworksinc.com • www.skyworksinc.com
BRO391-11A 9/11
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