SK2U200 [SMC]
Ultrafast, soft reverse recovery, with high operation junction temperature;
| 型号： | SK2U200 |
| 厂家： | 
Sangdest Microelectronic (Nanjing) Co., Ltd |
| 描述： | Ultrafast, soft reverse recovery, with high operation junction temperature |
| 文件： | 总4页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK2U200-400
Technical Data
Data Sheet N1625, Rev. -
Green Products
SK2U200-400 Ultrafast Recovery Modules
Features:
•
•
•
•
•
•
•
•
•
•
•
Two fully independent diodes
Fully insulated package
Ultrafast, soft reverse recovery, with high operation junction temperature (175℃ Tj )
Lo forward voltage drop
Optimized for power conversion: welding and industrial SMPS applications
Easy to use and parallel
Industry standard outline
Designed and qualified for industrial level
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm
38.0± 0.2
31.5± 0.1
±
12.0 0.3
30.2± 0.1
15.0
9.5± 0.1
4
2
4-M4
∮4.2
R2.1
+0.2
-0
4.2
8± 0.2
SOT-227
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SK2U200-400
Technical Data
Data Sheet N1625, Rev. -
Green Products
Marking Diagram:
S
K
= SMC's power module
= SOT-227 package
2
= Circuit configuration
U
= Ultrafast rectifier
200
400
= Forward Current (200A)
= Reverse Voltage (400V)
Cautions：Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
Package
Shipping
SOT-227
(Pb-Free)
SK2U200-400
10pcs / tube
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Cathode to anode voltage
VR
-
400
V
50% duty cycle @TC = 90°C,
rectangular wave form
Continuous forward current
per diode
IF(1)
120
A
Single pulse forward
current per diode
8.3 ms, half Sine pulse,
TC=25℃
Any terminal to case, t=1
minute
IFSM
ViSol
600
A
V
RMS isolation voltage
2500
Maximum power
PD
311
W
TC=90℃
dissipation per module
Note: (1) Maximum continuous forward current must be limited to 100A to do not exceed the maxium temperature of power terminates.
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SK2U200-400
Technical Data
Data Sheet N1625, Rev. -
Green Products
Electrical Characteristics:
Characteristics
Symbol
Condition
@ IR =100µA
Min.
Typ.
Max.
Units
Cathode to anode breakdown
voltage
VBR
400
-
-
V
Forward Voltage Drop
(per leg) *
VF1
VF2
-
-
1.08
0.92
1.15
1.0
V
V
@ 100A, Pulse, TJ = 25 °C
@ 100A, Pulse, TJ = 125 °C
Reverse Current (per leg) *
@VR = rated V
TJ = 25 °C
R
IR1
IR2
Trr
-
-
-
0.03
0.06
120
50
2
μA
mA
nS
@VR = rated V
TJ = 125 °C
R
Reverse recovery time
IF=500mA, IR=1A,and
Irm=250mA
150
* Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
-55 to +175
-55 to +175
Units
°C
°C
Junction Temperature
Storage Temperature
-
-
TJ
Tstg
Maximum Thermal
Resistance Junction to Case
(per leg)
DC operation
0.56
RθJC
°C/W
Maximum Thermal
Resistance Junction to Case
(per package)
Typical Case to heatsink
DC operation
0.28
RθJC
RθJS
°C/W
°C/W
Flat, greased surface
0.075
Typical Mounting Torque
Typical Approximate Weight
Case Style
1.3
30
TM
wt
-
-
Nm
g
SOT-227
• China - Germany - Korea - Singapore - United States •
• http://www.smc-diodes.com - sales@ smc-diodes.com •
SK2U200-400
Technical Data
Data Sheet N1625, Rev. -
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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