SM3021-030-G-D [SMI]
OEM Silicon Pressure Die;
| 型号： | SM3021-030-G-D |
| 厂家： | 
Silicon Microstructures, Inc. |
| 描述： | OEM Silicon Pressure Die |
| 文件： | 总6页 (文件大小：670K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
OEM Silicon Pressure Die
AccuStable SM30D Family
(Replaces SM30G)
FEATURES
•
•
•
•
•
•
•
•
Enhanced stability with an integrated field shield
Qualified operating temperature range: -40oC to 150oC
Small size 1.34 x 1.34 mm
Differential or gauge configuration
Available 5, 15, 30, 80, 150 PSI
Ratiometric with supply voltage up to 10 V
Qualified using Grade 0 AEC-Q100 automotive standards
Manufactured according to ISO9001 and ISO/TS 16949
standards
•
RoHS & REACH compliant
DESCRIPTION
Provided in die form, these sensors can be mounted on ceramic
on a variety of substrates or packages as part of an OEM system.
They also may be packaged into proprietary or application specific
sensor lines.
The SM30D is a silicon micro-machined, piezoresistive pressure
sensing die. This device is available with a full-scale range of 5 to
150 PSI. Both open-bridge and closed-bridge versions are
available. This sensor is ideal for OEM and high-volume
applications
The SM30D die are electrically probed, diced, inspected and
shipped on tape. Electronic wafer maps are provided with each
wafer.
For additional shipping options, contact sales@si-
micro.com
Medical
Patient Monitors
Blood Pressure Monitors
Oxygen Concentrators
Fluid Evacuation
Industrial
Industrial Controls
Automotive
Diesel Particulate Filter
Exhaust Gas Recirculation
Automotive Systems
Compressors & Pumps
Pressure Switches
Oil-Filled Packages
Ventilators
+1-(408) 577-0100 | sales@si-micro.com I www.si-micro.com
Silicon Microstructures, Inc. 2001-2020. All rights reserved
Page 1
DOC # 40DS3020.09
SM30D Series
www.si-micro.com
Absolute Maximum Ratings
No.
Characteristic
Excitation Voltage(a)
Symbol
VDD
Minimum Typical
Maximum
Units
1
2
3
4
-
-
-
-
10
+150
+150
2
V
Operating Temperature
Storage Temperature(a)
ESD Rating - Human Body Model
TOP
-40
-55
°C
°C
kV
TSTG
VESD
Notes:
a. The device can only be driven with the supply voltage connected to the pins as shown.
Legacy Product Operating Proof Pressure
Burst Pressure
No.
Product Number
(b)
(b)
Number
Pressure
(PPROOF
)
(PBURST)
SM30D-H-ND-005S-0000A
SM30D-H-ND-005S-0000B
SM3020-005-G-D
SM3021-005-G-D
5
6
7
8
9
0 to 5 PSI
25 PSI
40 PSI
SM30D-H-ND-015S-0000A
SM30D-H-ND-015S-0000B
SM3020-015-G-D
SM3021-015-G-D
0 to 15 PSI
0 to 30 PSI
0 to 80 PSI
0 to 150 PSI
45 PSI
90 PSI
75 PSI
SM30D-H-ND-030S-0000A
SM30D-H-ND-030S-0000B
SM3020-030-G-D
SM3021-030-G-D
150 PSI
320 PSI
450 PSI
SM30D-H-ND-080S-0000A
SM30D-H-ND-080S-0000B
SM3020-080-G-D
SM3021-080-G-D
240 PSI
300 PSI
SM30D-H-ND-150S-0000A
SM30D-H-ND-150S-0000B
SM3020-150-G-D
SM3021-150-G-D
Notes:
b. Tested on a sample basis. The burst and proof pressure values are limited by pressure applied to the backside of the die. The burst and proof pressure
values are higher than shown here when pressure is applied to the topside of the die.
c. Production release pending
+1-(408) 577-0100 | sales@si-micro.com I www.si-micro.com
Silicon Microstructures, Inc. 2001-2020. All rights reserved
Page 2
DOC # 40DS3020.09
SM30D Series
www.si-micro.com
OPERATING CHARACTERISTICS FOR SM30D
The operating characteristics are based on packaged die. The sensor performance may vary depending on the die attach material and process. The die
attach material and process should minimize the stress transferred to the sensor die.
The sensor can be operated with the highest pressure applied to the topside of the die (topside operation) or the highest pressure applied to the backside
of the die (backside operation). With topside operation, increasing topside pressure will result in an increasing sensor output.
Operating Characteristics - Specifications
All parameters are specified at Vdd = 5.0 V supply voltage at 25oC, unless otherwise noted.
No.
Characteristic
Symbol Minimum
Typical
90
Maximum
Units
5, 15, 80 PSI (d, e)
60
120
105
25
10
Span (FS PRANGE
)
VSPAN
mV
30, 150 PSI (d, e)
55
80
11
12
13
14
15
Zero Offset
TC Span (d, f, g)
VZERO
TCS
-45
-0.24
-75
-10
mV
%/°C
µV/°C
%/°C
%/FS
-0.19
-
-0.155
75
TC Zero Offset(d, f, g)
TC Resistance(d, f, g)
Linearity - Topside (d, g, h)
TCZ
TCR
NLTS
0.24
-0.15
-0.3
0.275
<±0.10
<±0.2
0.33
0.15
0.3
5 PSI (d, g, i)
16 Linearity – Backside
NLBS
%/FS
15, 30, 80,
-0.15
4
<±0.10
0.15
6
150 PSI (d, g, i)
17
18
19
Bridge Resistance
RB
5
kΩ
Pressure Hysteresis(d)
Thermal Hysteresis(d, f)
PHYS
THYS
<±0.1
<±0.2
%FS
%FS
Notes:
d. Tested on a sample basis
e. For other pressures, please contact SMI sales at +1-(408) 577-0100 or email at sales@si-micro.com
f. Determined by measurements taken over -40°C to 150°C
g. Defined as best fit straight line
h. Topside linearity is with the highest pressure applied to the topside of the die
i. Backside linearity is with the highest pressure applied to the backside of the die
+1-(408) 577-0100 | sales@si-micro.com I www.si-micro.com
Silicon Microstructures, Inc. 2001-2020. All rights reserved
Page 3
DOC # 40DS3020.09
SM30D Series
www.si-micro.com
SM30D Diagrams and Dimensions
All dimensions are in micron.
Bond pad opening size = 90x90 µm
Typical Operation
PAD #
PAD DESCRIPTION
PAD LABEL
TYPE
- Analog Output
- Analog Output
Power
VALUE Coordinate X-Axis (µm)
Coordinate Y-Axis (µm)
1
Negative Sensor Output
Negative Sensor Output
Negative Supply Voltage
Negative Supply Voltage
Negative Supply Voltage
Positive Sensor Output
Positive Supply Voltage
S-
S2-
V3-
V2-
V-
-
-
0
0
1100
1100
890
0
2
0
3
0 V
0 V
0 V
-
890
1100
1100
840
260
4
Power
5
Power
6
7
S+
+ Analog Output
Power
0
V+
+5 V
0
NOTES:
•
•
Closed bridge configuration: Pads 3, 4, & 5 are connected
Open bridge configuration: Pads 4 & 5 are connected, and pad 3 is the second negative supply voltage connection
+1-(408) 577-0100 | sales@si-micro.com I www.si-micro.com
Silicon Microstructures, Inc. 2001-2020. All rights reserved
Page 4
DOC # 40DS3020.09
SM30D Series
www.si-micro.com
Ordering Information
Order Code
Full-Scale
Pressure Range
Pressure
Type
Minimum Order
Configuration
Quantity
SM30D-H-ND-005S-0000A
SM30D-H-ND-005S-0000B
Closed bridge, 6” wafer diced on tape
Open bridge, 6” wafer diced on tape
5 PSI
15 PSI
30 PSI
80 PSI
150 PSI
Closed bridge, 6” wafer diced on tape
Open bridge, 6” wafer diced on tape
SM30D-H-ND-015S-0000A
SM30D-H-ND-015S-0000B
Closed bridge, 6” wafer diced on tape
Differential / Gauge Open bridge, 6” wafer diced on tape
SM30D-H-ND-030S-0000A
SM30D-H-ND-030S-0000B
1 Wafer
(1 wafer = 6,000 ±10%)
SM30D-H-ND-080S-0000A
SM30D-H-ND-080S-0000B
Closed bridge, 6” wafer diced on tape
Open bridge, 6” wafer diced on tape
SM30D-H-ND-150S-0000A
SM30D-H-ND-150S-0000B
Closed bridge, 6” wafer diced on tape
Open bridge, 6” wafer diced on tape
NOTES:
j: Production release pending
Part Number Legend
Qualification Standards
REACH Compliant
RoHS Compliant
PFOS/PFOA Compliant
For qualification specifications, please contact Sales at sales@si-micro.com
+1-(408) 577-0100 | sales@si-micro.com I www.si-micro.com
Silicon Microstructures, Inc. 2001-2020. All rights reserved
Page 5
DOC # 40DS3020.09
SM30D Series
www.si-micro.com
Silicon Microstructures Warranty and Disclaimer:
Silicon Microstructures, Inc. reserves the right to make changes without further notice to any products herein and
to amend the contents of this data sheet at any time and at its sole discretion.
Information in this document is provided solely to enable software and system implementers to use Silicon
Microstructures, Inc. products and/or services. No express or implied copyright licenses are granted hereunder to
design or fabricate any silicon-based microstructures based on the information in this document.
Silicon Microstructures, Inc. makes no warranty, representation, or guarantee regarding the suitability of its
products for any particular purpose, nor does Silicon Microstructures, Inc. assume any liability arising out of the
application or use of any product or silicon-based microstructure, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters which may be provided in
Silicon Microstructure’s data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”, must be validated for each
customer application by customer’s technical experts. Silicon Microstructures, Inc. does not convey any license
under its patent rights nor the rights of others. Silicon Microstructures, Inc. makes no representation that the
circuits are free of patent infringement. Silicon Microstructures, Inc. products are not designed, intended, or
authorized for use as components in systems intended for surgical implant into the body, or other applications
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Inc. product could create a situation where personal injury or death may occur. Should Buyer purchase or use
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that Silicon Microstructures, Inc. was negligent regarding the design or manufacture of the part.
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workmanship. Silicon Microstructures, Inc. standard product warranty applies unless agreed to otherwise by
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Microstructures, Inc. directly for specific warranty details. If warranted goods are returned to Silicon
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© Silicon Microstructures, Inc. 2001-2020. All rights reserved.
+1-(408) 577-0100 | sales@si-micro.com I www.si-micro.com
Silicon Microstructures, Inc. 2001-2020. All rights reserved
Page 6
DOC # 40DS3020.09
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