SM30G-H-ND-005S-0010A [SMI]

OEM Silicon Pressure Die;
SM30G-H-ND-005S-0010A
型号: SM30G-H-ND-005S-0010A
厂家: Silicon Microstructures, Inc.    Silicon Microstructures, Inc.
描述:

OEM Silicon Pressure Die

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OEM Silicon Pressure Die  
AccuStable™ SM30G Platinum Family  
FEATURES  
Platinum bond-pads enable use in harsh environments  
Qualified using Grade 0 AEC-Q100 automotive standards  
Enhanced stability with an integrated field shield  
Extended operating temperature range: -40oC to 150oC  
Small size 1.35 x 1.35 mm  
<1% Output shift over life  
Differential or gage configuration  
Available 5, 15, & 30 PSI  
Ratiometric with supply voltage up to 10 V  
Manufactured according to ISO9001 and ISO/TS 16949 standards  
RoHS & REACH compliant  
DESCRIPTION  
Provided in die form, these sensors can be mounted on ceramic  
on a variety of substrates or packages as part of an OEM system.  
They also may be packaged into proprietary or application specific  
sensor lines.  
The SM30G-Platinum is a silicon micro-machined, piezoresistive  
pressure sensing die. This device will be available with a full-scale  
range of 5 to 30 PSI and is ideal for OEM and high-volume  
applications. The device has platinum bond-pads to enable its  
use in harsh environments.  
The devices are electrically probed, diced, inspected and shipped  
on tape. Electronic wafer maps are provided with each wafer.  
Medical  
Patient Monitors  
Industrial  
Industrial Controls  
Automotive  
Diesel Particulate Filter (DPF)  
Exhaust Gas Recirculation (EGR)  
Automotive Systems  
Blood Pressure Monitors  
Oxygen Concentrators  
Fluid Evacuation  
Compressors & Pumps  
Pressure Switches  
Gas Particulate Filter (GPF)  
+1-(408) 577-0100 | sales@si-micro.com I www.si-micro.com  
Silicon Microstructures, Inc. 2001-2019. All rights reserved  
Page 1  
DOC # 40DS3022.02  
SM30G Platinum Series  
Minimum Typical  
www.si-micro.com  
Absolute Maximum Ratings  
No.  
Characteristic  
Excitation Voltage(a)  
Symbol  
VDD  
Maximum  
Units  
1
2
3
4
-
-
-
-
10  
+150  
+150  
2
V
Operating Temperature  
Storage Temperature(a)  
ESD Rating - Human Body Model  
TOP  
-40  
-55  
°C  
°C  
kV  
TSTG  
VESD  
Notes:  
a. The device can only be driven with the supply voltage connected to the pins as shown.  
Legacy Product Operating Proof Pressure  
Burst Pressure  
No.  
Product Number  
(b)  
(b)  
Number  
Pressure(c)  
(PPROOF  
)
(PBURST)  
±5 PSI  
5
6
SM3022-005-G-D  
0 to 5 PSI  
0 to -5 PSI  
±15 PSI  
0 to 15 PSI  
0 to -15 PSI  
±30 PSI  
25 PSI  
40 PSI  
75 PSI  
150 PSI  
SM30G-H-ND-005S-0010A  
SM30G-H-ND-015S-0010A  
SM30G-H-ND-030S-0010A  
SM3022-015-G-D  
SM3022-030-G-D  
45 PSI  
90 PSI  
7
0 to 30 PSI  
0 to -30 PSI  
Notes:  
b. Tested on a sample basis. The burst and proof pressure values are limited by pressure applied to the backside of the die. The burst and proof pressure values are  
higher than shown here when pressure is applied to the topside of the die.  
c. Can be operated as topside gauge, backside gage & differential.  
+1-(408) 577-0100 | sales@si-micro.com I www.si-micro.com  
Silicon Microstructures, Inc. 2001-2019. All rights reserved  
Page 2  
DOC # 40DS3022.02  
SM30G Platinum Series  
www.si-micro.com  
OPERATING CHARACTERISTICS FOR SM30G Platinum Series  
The operating characteristics are based on packaged die. The sensor performance may vary depending on the die attach material and process. The die  
attach material and process should minimize the stress transferred to the sensor die.  
The sensor can be operated with the highest pressure applied to the topside of the die (topside operation) or the highest pressure applied to the backside  
of the die (backside operation). With topside operation, increasing topside pressure will result in an increasing sensor output.  
Operating Characteristics - Specifications  
All parameters are specified at Vdd = 5.0 V supply voltage at 25oC, unless otherwise noted.  
No.  
Characteristic  
Symbol Minimum  
Typical  
90  
Maximum  
Units  
5, 15 PSI (c, d)  
60  
120  
105  
120  
105  
+25  
-0.155  
75  
Topside  
8
VSPAN  
mV  
Span (FS PRANGE  
)
30 PSI (c, d)  
5, 15 PSI (c, d)  
30 PSI (c, d)  
55  
80  
60  
90  
Backside  
9
VSPAN  
mV  
Span (FS PRANGE  
)
55  
80  
10  
11  
12  
13  
14  
Zero Offset  
TC Span (c, e, f)  
VZERO  
TCS  
-45  
-0.24  
-75  
-5  
mV  
%/°C  
µV/°C  
%/°C  
%/FS  
-0.19  
-
TC Zero Offset(c, e, f)  
TC Resistance(c, e, f)  
Linearity - Topside (c, f, g)  
TCZ  
TCR  
NLTS  
0.24  
-0.15  
-0.3  
-0.15  
4
0.275  
<±0.10  
<±0.2  
<±0.10  
5
0.33  
0.15  
0.3  
5 PSI (c, f, h)  
15, 30 (c, f, h)  
Bridge Resistance  
15 Linearity Backside  
NLBS  
%/FS  
0.15  
6
16  
17  
18  
RB  
kΩ  
Pressure Hysteresis(c)  
Thermal Hysteresis(c, e)  
PHYS  
THYS  
<±0.1  
<±0.3  
%FS  
%FS  
Notes:  
c. Tested on a sample basis  
d. For other pressures, please contact SMI sales at +1-(408) 577-0100 or email at sales@si-micro.com  
e. Determined by measurements taken over -40°C to 150°C  
f. Defined as best fit straight line  
g. Topside linearity is with the highest pressure applied to the topside of the die  
h. Backside linearity is with the highest pressure applied to the backside of the die  
+1-(408) 577-0100 | sales@si-micro.com I www.si-micro.com  
Silicon Microstructures, Inc. 2001-2019. All rights reserved  
Page 3  
DOC # 40DS3022.02  
SM30G Platinum Series  
www.si-micro.com  
SM30G Diagrams and Dimensions  
Assembly Recommendations  
(a) Use soft RTV for die-attachment  
(b) A bond line thickness of 180-220 µm is recommended  
(c) The RTV should not go up the inside of the die cavity by more  
than 50% of the die thickness.  
Platinum bond-pad size = 110x110µm  
All dimensions are in micron.  
Typical Operation  
PAD #  
PAD DESCRIPTION  
Negative Sensor Output  
Negative Sensor Output  
Negative Supply Voltage  
Negative Supply Voltage  
Negative Supply Voltage  
Positive Sensor Output  
Positive Supply Voltage  
PAD LABEL  
TYPE  
- Analog Output  
- Analog Output  
Power  
VALUE Coordinate X-Axis (µm)  
Coordinate Y-Axis (µm)  
1
2
3
4
5
6
7
S-  
S2-  
V3-  
V2-  
V-  
-
-
0
0
1100  
1100  
890  
0
0
0 V  
0 V  
0 V  
-
890  
1100  
1100  
840  
260  
Power  
Power  
S+  
+ Analog Output  
Power  
0
V+  
+5 V  
0
NOTES:  
Closed bridge configuration: Pads 3, 4, & 5 are connected  
Open bridge configuration: Pads 4 & 5 are connected, and pad 3 is the second negative supply voltage connection  
+1-(408) 577-0100 | sales@si-micro.com I www.si-micro.com  
Silicon Microstructures, Inc. 2001-2019. All rights reserved  
Page 4  
DOC # 40DS3022.02  
SM30G Platinum Series  
www.si-micro.com  
Ordering Information  
Order Code  
Legacy Product  
Number  
Full-Scale  
Pressure Range*  
Minimum Order  
Quantity  
Configuration  
SM30G-H-ND-005S-0010A  
SM30G-H-ND-015S-0010A  
SM30G-H-ND-030S-0010A  
SM3022-005-G-D  
SM3022-015-G-D  
SM3022-030-G-D  
Closed Bridge  
Closed Bridge  
Closed Bridge  
5 PSI  
1 Wafer (1 wafer = 6,000 ±10%)  
15 PSI  
30 PSI  
NOTE: Part numbers of engineering samples are subject to change  
* Topside 0 to +5 PSI, 0 to -5 PSI or ± FS Pressure  
Part Number Legend  
Qualification Standards  
REACH Compliant  
RoHS Compliant  
PFOS/PFOA Compliant  
For qualification specifications, please contact Sales at sales@si-micro.com  
+1-(408) 577-0100 | sales@si-micro.com I www.si-micro.com  
Silicon Microstructures, Inc. 2001-2019. All rights reserved  
Page 5  
DOC # 40DS3022.02  
SM30G Platinum Series  
www.si-micro.com  
Silicon Microstructures Warranty and Disclaimer:  
Silicon Microstructures, Inc. reserves the right to make changes without further notice to any products herein and to amend  
the contents of this data sheet at any time and at its sole discretion.  
Information in this document is provided solely to enable software and system implementers to use Silicon Microstructures,  
Inc. products and/or services. No express or implied copyright licenses are granted hereunder to design or fabricate any silicon-  
based microstructures based on the information in this document.  
Silicon Microstructures, Inc. makes no warranty, representation, or guarantee regarding the suitability of its products for any  
particular purpose, nor does Silicon Microstructures, Inc. assume any liability arising out of the application or use of any  
product or silicon-based microstructure, and specifically disclaims any and all liability, including without limitation  
consequential or incidental damages. “Typical” parameters which may be provided in Silicon Microstructure’s data sheets  
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating  
parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Silicon  
Microstructures, Inc. does not convey any license under its patent rights nor the rights of others. Silicon Microstructures, Inc.  
makes no representation that the circuits are free of patent infringement. Silicon Microstructures, Inc. products are not  
designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other  
applications intended to support or sustain life, or for any other application in which the failure of the Silicon Microstructures,  
Inc. product could create a situation where personal injury or death may occur. Should Buyer purchase or use Silicon  
Microstructures, Inc. products for any such unintended or unauthorized application, Buyer shall indemnify and hold Silicon  
Microstructures, Inc. and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,  
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that Silicon Microstructures, Inc. was negligent  
regarding the design or manufacture of the part.  
Silicon Microstructures, Inc. warrants goods of its manufacture as being free of defective materials and faulty workmanship.  
Silicon Microstructures, Inc. standard product warranty applies unless agreed to otherwise by Silicon Microstructures, Inc. in  
writing; please refer to your order acknowledgement or contact Silicon Microstructures, Inc. directly for specific warranty  
details. If warranted goods are returned to Silicon Microstructures, Inc. during the period of coverage, Silicon Microstructures,  
Inc. will repair or replace, at its option, without charge those items it finds defective. The foregoing is buyer’s sole remedy and  
is in lieu of all warranties, expressed or implied, including those of merchantability and fitness for a particular purpose. In no  
event shall Silicon Microstructures, Inc. be liable for consequential, special, or indirect damages.  
While Silicon Microstructures, Inc. provides application assistance personally, through its literature and the Silicon  
Microstructures, Inc. website, it is up to the customer to determine the suitability of the product for its specific application. The  
information supplied by Silicon Microstructures, Inc. is believed to be accurate and reliable as of this printing. However, Silicon  
Microstructures, Inc. assumes no responsibility for its use. Silicon Microstructures, Inc. assumes no responsibility for any  
inaccuracies and/or errors in this publication and reserves the right to make changes without further notice to any products or  
specifications herein  
Silicon Microstructures, Inc.TM and the Silicon Microstructures, Inc. logo are trademarks of Silicon Microstructures, Inc. All  
other service or product names are the property of their respective owners.  
© Silicon Microstructures, Inc. 2001-2019. All rights reserved.  
+1-(408) 577-0100 | sales@si-micro.com I www.si-micro.com  
Silicon Microstructures, Inc. 2001-2019. All rights reserved  
Page 6  
DOC # 40DS3022.02  

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