SM30G-H-ND-005S-0010A [SMI]
OEM Silicon Pressure Die;型号: | SM30G-H-ND-005S-0010A |
厂家: | Silicon Microstructures, Inc. |
描述: | OEM Silicon Pressure Die |
文件: | 总6页 (文件大小:646K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
OEM Silicon Pressure Die
AccuStable™ SM30G Platinum Family
FEATURES
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Platinum bond-pads enable use in harsh environments
Qualified using Grade 0 AEC-Q100 automotive standards
Enhanced stability with an integrated field shield
Extended operating temperature range: -40oC to 150oC
Small size 1.35 x 1.35 mm
<1% Output shift over life
Differential or gage configuration
Available 5, 15, & 30 PSI
Ratiometric with supply voltage up to 10 V
Manufactured according to ISO9001 and ISO/TS 16949 standards
RoHS & REACH compliant
DESCRIPTION
Provided in die form, these sensors can be mounted on ceramic
on a variety of substrates or packages as part of an OEM system.
They also may be packaged into proprietary or application specific
sensor lines.
The SM30G-Platinum is a silicon micro-machined, piezoresistive
pressure sensing die. This device will be available with a full-scale
range of 5 to 30 PSI and is ideal for OEM and high-volume
applications. The device has platinum bond-pads to enable its
use in harsh environments.
The devices are electrically probed, diced, inspected and shipped
on tape. Electronic wafer maps are provided with each wafer.
Medical
Patient Monitors
Industrial
Industrial Controls
Automotive
Diesel Particulate Filter (DPF)
Exhaust Gas Recirculation (EGR)
Automotive Systems
Blood Pressure Monitors
Oxygen Concentrators
Fluid Evacuation
Compressors & Pumps
Pressure Switches
Gas Particulate Filter (GPF)
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Silicon Microstructures, Inc. 2001-2019. All rights reserved
Page 1
DOC # 40DS3022.02
SM30G Platinum Series
Minimum Typical
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Absolute Maximum Ratings
No.
Characteristic
Excitation Voltage(a)
Symbol
VDD
Maximum
Units
1
2
3
4
-
-
-
-
10
+150
+150
2
V
Operating Temperature
Storage Temperature(a)
ESD Rating - Human Body Model
TOP
-40
-55
°C
°C
kV
TSTG
VESD
Notes:
a. The device can only be driven with the supply voltage connected to the pins as shown.
Legacy Product Operating Proof Pressure
Burst Pressure
No.
Product Number
(b)
(b)
Number
Pressure(c)
(PPROOF
)
(PBURST)
±5 PSI
5
6
SM3022-005-G-D
0 to 5 PSI
0 to -5 PSI
±15 PSI
0 to 15 PSI
0 to -15 PSI
±30 PSI
25 PSI
40 PSI
75 PSI
150 PSI
SM30G-H-ND-005S-0010A
SM30G-H-ND-015S-0010A
SM30G-H-ND-030S-0010A
SM3022-015-G-D
SM3022-030-G-D
45 PSI
90 PSI
7
0 to 30 PSI
0 to -30 PSI
Notes:
b. Tested on a sample basis. The burst and proof pressure values are limited by pressure applied to the backside of the die. The burst and proof pressure values are
higher than shown here when pressure is applied to the topside of the die.
c. Can be operated as topside gauge, backside gage & differential.
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Silicon Microstructures, Inc. 2001-2019. All rights reserved
Page 2
DOC # 40DS3022.02
SM30G Platinum Series
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OPERATING CHARACTERISTICS FOR SM30G Platinum Series
The operating characteristics are based on packaged die. The sensor performance may vary depending on the die attach material and process. The die
attach material and process should minimize the stress transferred to the sensor die.
The sensor can be operated with the highest pressure applied to the topside of the die (topside operation) or the highest pressure applied to the backside
of the die (backside operation). With topside operation, increasing topside pressure will result in an increasing sensor output.
Operating Characteristics - Specifications
All parameters are specified at Vdd = 5.0 V supply voltage at 25oC, unless otherwise noted.
No.
Characteristic
Symbol Minimum
Typical
90
Maximum
Units
5, 15 PSI (c, d)
60
120
105
120
105
+25
-0.155
75
Topside
8
VSPAN
mV
Span (FS PRANGE
)
30 PSI (c, d)
5, 15 PSI (c, d)
30 PSI (c, d)
55
80
60
90
Backside
9
VSPAN
mV
Span (FS PRANGE
)
55
80
10
11
12
13
14
Zero Offset
TC Span (c, e, f)
VZERO
TCS
-45
-0.24
-75
-5
mV
%/°C
µV/°C
%/°C
%/FS
-0.19
-
TC Zero Offset(c, e, f)
TC Resistance(c, e, f)
Linearity - Topside (c, f, g)
TCZ
TCR
NLTS
0.24
-0.15
-0.3
-0.15
4
0.275
<±0.10
<±0.2
<±0.10
5
0.33
0.15
0.3
5 PSI (c, f, h)
15, 30 (c, f, h)
Bridge Resistance
15 Linearity – Backside
NLBS
%/FS
0.15
6
16
17
18
RB
kΩ
Pressure Hysteresis(c)
Thermal Hysteresis(c, e)
PHYS
THYS
<±0.1
<±0.3
%FS
%FS
Notes:
c. Tested on a sample basis
d. For other pressures, please contact SMI sales at +1-(408) 577-0100 or email at sales@si-micro.com
e. Determined by measurements taken over -40°C to 150°C
f. Defined as best fit straight line
g. Topside linearity is with the highest pressure applied to the topside of the die
h. Backside linearity is with the highest pressure applied to the backside of the die
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Silicon Microstructures, Inc. 2001-2019. All rights reserved
Page 3
DOC # 40DS3022.02
SM30G Platinum Series
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SM30G Diagrams and Dimensions
Assembly Recommendations
(a) Use soft RTV for die-attachment
(b) A bond line thickness of 180-220 µm is recommended
(c) The RTV should not go up the inside of the die cavity by more
than 50% of the die thickness.
Platinum bond-pad size = 110x110µm
All dimensions are in micron.
Typical Operation
PAD #
PAD DESCRIPTION
Negative Sensor Output
Negative Sensor Output
Negative Supply Voltage
Negative Supply Voltage
Negative Supply Voltage
Positive Sensor Output
Positive Supply Voltage
PAD LABEL
TYPE
- Analog Output
- Analog Output
Power
VALUE Coordinate X-Axis (µm)
Coordinate Y-Axis (µm)
1
2
3
4
5
6
7
S-
S2-
V3-
V2-
V-
-
-
0
0
1100
1100
890
0
0
0 V
0 V
0 V
-
890
1100
1100
840
260
Power
Power
S+
+ Analog Output
Power
0
V+
+5 V
0
NOTES:
•
•
Closed bridge configuration: Pads 3, 4, & 5 are connected
Open bridge configuration: Pads 4 & 5 are connected, and pad 3 is the second negative supply voltage connection
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Silicon Microstructures, Inc. 2001-2019. All rights reserved
Page 4
DOC # 40DS3022.02
SM30G Platinum Series
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Ordering Information
Order Code
Legacy Product
Number
Full-Scale
Pressure Range*
Minimum Order
Quantity
Configuration
SM30G-H-ND-005S-0010A
SM30G-H-ND-015S-0010A
SM30G-H-ND-030S-0010A
SM3022-005-G-D
SM3022-015-G-D
SM3022-030-G-D
Closed Bridge
Closed Bridge
Closed Bridge
5 PSI
1 Wafer (1 wafer = 6,000 ±10%)
15 PSI
30 PSI
NOTE: Part numbers of engineering samples are subject to change
* Topside 0 to +5 PSI, 0 to -5 PSI or ± FS Pressure
Part Number Legend
Qualification Standards
REACH Compliant
RoHS Compliant
PFOS/PFOA Compliant
For qualification specifications, please contact Sales at sales@si-micro.com
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Silicon Microstructures, Inc. 2001-2019. All rights reserved
Page 5
DOC # 40DS3022.02
SM30G Platinum Series
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Silicon Microstructures Warranty and Disclaimer:
Silicon Microstructures, Inc. reserves the right to make changes without further notice to any products herein and to amend
the contents of this data sheet at any time and at its sole discretion.
Information in this document is provided solely to enable software and system implementers to use Silicon Microstructures,
Inc. products and/or services. No express or implied copyright licenses are granted hereunder to design or fabricate any silicon-
based microstructures based on the information in this document.
Silicon Microstructures, Inc. makes no warranty, representation, or guarantee regarding the suitability of its products for any
particular purpose, nor does Silicon Microstructures, Inc. assume any liability arising out of the application or use of any
product or silicon-based microstructure, and specifically disclaims any and all liability, including without limitation
consequential or incidental damages. “Typical” parameters which may be provided in Silicon Microstructure’s data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Silicon
Microstructures, Inc. does not convey any license under its patent rights nor the rights of others. Silicon Microstructures, Inc.
makes no representation that the circuits are free of patent infringement. Silicon Microstructures, Inc. products are not
designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Silicon Microstructures,
Inc. product could create a situation where personal injury or death may occur. Should Buyer purchase or use Silicon
Microstructures, Inc. products for any such unintended or unauthorized application, Buyer shall indemnify and hold Silicon
Microstructures, Inc. and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Silicon Microstructures, Inc. was negligent
regarding the design or manufacture of the part.
Silicon Microstructures, Inc. warrants goods of its manufacture as being free of defective materials and faulty workmanship.
Silicon Microstructures, Inc. standard product warranty applies unless agreed to otherwise by Silicon Microstructures, Inc. in
writing; please refer to your order acknowledgement or contact Silicon Microstructures, Inc. directly for specific warranty
details. If warranted goods are returned to Silicon Microstructures, Inc. during the period of coverage, Silicon Microstructures,
Inc. will repair or replace, at its option, without charge those items it finds defective. The foregoing is buyer’s sole remedy and
is in lieu of all warranties, expressed or implied, including those of merchantability and fitness for a particular purpose. In no
event shall Silicon Microstructures, Inc. be liable for consequential, special, or indirect damages.
While Silicon Microstructures, Inc. provides application assistance personally, through its literature and the Silicon
Microstructures, Inc. website, it is up to the customer to determine the suitability of the product for its specific application. The
information supplied by Silicon Microstructures, Inc. is believed to be accurate and reliable as of this printing. However, Silicon
Microstructures, Inc. assumes no responsibility for its use. Silicon Microstructures, Inc. assumes no responsibility for any
inaccuracies and/or errors in this publication and reserves the right to make changes without further notice to any products or
specifications herein
Silicon Microstructures, Inc.TM and the Silicon Microstructures, Inc. logo are trademarks of Silicon Microstructures, Inc. All
other service or product names are the property of their respective owners.
© Silicon Microstructures, Inc. 2001-2019. All rights reserved.
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Silicon Microstructures, Inc. 2001-2019. All rights reserved
Page 6
DOC # 40DS3022.02
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