CXM3592AUR-T9 [SONY]
SPDT, 2700MHz Max, 1 Func, 0.77dB Insertion Loss-Max, GAAS;
| 型号： | CXM3592AUR-T9 |
| 厂家： | 
SONY CORPORATION |
| 描述： | SPDT, 2700MHz Max, 1 Func, 0.77dB Insertion Loss-Max, GAAS 射频 微波 光电二极管 |
| 文件： | 总15页 (文件大小：640K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ultra-High Linearity SPDT Switch
CXM3592AUR
Description
The CXM3592AUR is a high power and ultra-high linearity SPDT switch for wireless communication systems.
The CXM3592AUR can be used for SVLTE and carrier aggregation requiring very high linearity.
This IC has a 1.8 V CMOS compatible decoder.
The Sony GaAs junction gate pHEMT (JPHEMT) MMIC process is used for low insertion loss and ultra-high linearity.
(Application: LTE/CDMA/GSM/UMTS Handsets and mini base-stations)
Features
◆Insertion loss: 0.22 dB (Typ.) (Cellular Band / GSM Low Band)
0.43 dB (Typ.) (IMT2000 / GSM High Band)
◆Ultra-high linearity: IMD3 = –104 dBm (Max.), IIP3 = 82 dBm (Min.)
at LTE Band 13, PTx = +23 dBm, PBlocker = +14 dBm
◆Low voltage operation: VDD = 2.5 V
◆No DC blocking capacitors required on RF ports
◆1 control input
◆Small package size: UQFN-12 pin (2.0 mm × 2.0 mm)
◆Lead-Free and RoHS compliant
Structure
GaAs JPHEMT MMIC switch, CMOS decoder
Absolute Maximum Ratings
♦ Bias voltage
VDD
Vctl
4
4
V
V
(Ta = 25 ˚C)
♦ Control voltage
(Ta = 25 ˚C)
♦ Maximum input power
♦ Operating temperature
♦ Storage temperature
36
dBm
˚C
(Duty cycle = 12.5 to 50 %, Ta = 25 ˚C)
Topr
Tstg
–35 to +90
–65 to +150
˚C
This IC is ESD sensitive device. Special handling precautions are required.
1
Block Diagram
SPDT Antenna Switch
RF2
RF3
RF1
MMIC Switch
CTL
VDD
CMOS Decoder
MMIC Switch
F1
F2
RF2
RF3
RF1
Truth Table
CTL
L
Active path
RF1-RF2
RF1-RF3
F1
F2
OFF
ON
ON
H
OFF
2
Pin Configuration
(Top View)
6
5
4
7
8
9
3
2
1
GND
RF3
GND
RF2
UQFN-12P PKG
2.0 mm × 2.0 mm
GND
GND
10
11
12
DC Bias Condition
Parameter
VDD
Min.
2.5
1.35
0
Typ.
2.7
1.8
—
Max.
3.3
Unit
V
Vctl (H)
Vctl (L)
3.3
0.45
3
Electrical Characteristics
(Ta = 25 °C, VDD = 2.5 V, Vctl = 0/1.8 V)
Item
Symbol
Path
Condition
Min.
―
―
―
―
―
―
18
11
9
Typ.
0.22
0.43
0.57
0.22
0.43
0.57
21
Max.
0.37
0.58
0.77
0.37
0.58
0.77
―
Unit
*1, *2, *6, *8
*3, *4, *7, *9
*5
RF1-RF2
Insertion loss
IL
dB
*1, *2, *6, *8
*3, *4, *7, *9
*5
RF1-RF3
RF1-RF2
RF1-RF3
*1, *2, *6, *8
*3, *4, *7, *9
*5
14
―
12
―
Isolation
VSWR
ISO.
dB
*1, *2, *6, *8
*3, *4, *7, *9
*5
18
11
9
21
―
14
―
12
―
All ports in
active paths
VSWR
700 to 2700 MHz
*6
―
―
1.5
―
2fo
3fo
2fo
3fo
2fo
3fo
2fo
IMD2
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
–60
–68
–66
–72
–80
–90
–82
―
–41
–41
–45
–45
–50
–50
–78
–110
–110
–104
–110
13
*7
Harmonics
RF1-RF2, RF3
dBm
*2, *3, *5
*1
*10, *11, *12, *15, *16, *19, *20, *23, *24
*10, *13, *14, *17, *18, *21, *22, *25, *26
*10, *27
dBm
Inter modulation
distortion in Rx
Band
―
RF1-RF2, RF3
IMD3
―
dBm
dBm
µs
*10, *28
―
Switching speed Ts
50 % Ctl to 90 % RF
VDD = 2.5 V to 90 % RF, Pin = 0 dBm
Vctl = 1.8 V
9
Wakeup time
Control current
Supply current
Twu
9
20
µs
Ictl
Idd
1
5
µA
VDD = 2.7 V
0.14
0.35
mA
Electrical characteristics are measured with all RF ports terminated in 50 Ω.
*1 Pin = 25 dBm, 704 to 787 MHz
*2 Pin = 26 dBm, 824 to 960 MHz
(Band 13, Band 17)
(Band 5, Band 8)
*3 Pin = 26 dBm, 1710 to 1990 MHz (Band 1 Tx, Band 2 Tx, Band 3 Tx, Band 4 Tx)
*4 Pin = 10 dBm, 2110 to 2170 MHz (Band 1 Rx, Band 4 Rx)
*5 Pin = 26 dBm, 2500 to 2690 MHz (Band 7)
*6 Pin = 35 dBm, 824 to 915 MHz
*7 Pin = 32 dBm, 1710 to 1910 MHz (GSM1800/1900 Tx)
*8 Pin = 10 dBm, 869 to 960 MHz (GSM850/900 Rx)
(GSM850/900 Tx)
*9 Pin = 10 dBm, 1805 to 1990 MHz (GSM1800/1900 Rx)
*10 Measured with the recommended circuit.
4
IMD Condition (1)
fTx
+20 dBm on RF
[MHz]
fBlocker
–15 dBm on RF1
[MHz]
fRx on RF
[MHz]
Band
IMD condition
IMD2 (fRx – fTx)
190
4090
1760
6040
80
*11
*12
*13
*14
*15
*16
*17
*18
*19
*20
*21
*22
*23
*24
*25
*26
IMD2 (fRx + fTx)
IMD3 (2fTx – fRx)
IMD3 (2fTx + fRx)
IMD2 (fRx – fTx)
IMD2 (fRx + fTx)
IMD3 (2fTx – fRx)
IMD3 (2fTx + fRx)
IMD2 (fRx – fTx)
IMD2 (fRx + fTx)
IMD3 (2fTx – fRx)
IMD3 (2fTx + fRx)
IMD2 (fRx – fTx)
IMD2 (fRx + fTx)
IMD3 (2fTx – fRx)
IMD3 (2fTx + fRx)
Band 1
Band 2
Band 5
Band 7
2140
1960
880
1950
1880
835
3840
1800
5720
45
1715
790
2550
120
5190
2415
7725
2655
2535
IMD Condition (2)
fTx
PTx = +23 dBm
on RF
fBlocker
PBlocker = +14 dBm on RF1
[MHz]
fRx on RF
[MHz]
Band
IMD condition
[MHz]
Band 13
BC0
747
872
786
782
IMD3 (2fTx – fRx)
825
827
*27
*28
IMD3 (fTx + fRx)/2
5
Triple Beat Ratio
(VDD = 2.5 V, Ta = 25 °C)
Condition
Input
power
at RF
[dBm]
Jammer
Triple beat
product
at RF*
Tx1 at
RF*
[MHz]
Tx2 at
RF*
[MHz]
Item
Symbol
TBR
Path
Min. Typ. Max. Unit
at RF1
–30 dBm
[MHz]
[MHz]
21.5
21.5
13.5
835.5
1880
1732
836.5
1881
1733
881.5
1960
2132
881.5 ± 1
1960 ± 1
2132 ± 1
88
88
88
―
―
―
―
―
―
Triple
beat
ratio
RF1 - RF2,
RF3
dBc
* Electrical characteristics are measured with all RF ports terminated in 50 Ω.
Measured with the recommended circuit.
IIP2
(VDD = 2.5 V, Ta = 25 °C)
Condition
Jammer at
RF1 –20 dBm
Item
Symbol
Path
Min.
Typ.
Max.
Unit
Tx at RF*
24 dBm [MHz]
IM2 product at
RF* [MHz]
[MHz]
836.61
836.61
1885
1718.61
45
881.61
881.61
1965
113.5
95.5
95.5
95.5
95.5
95.5
―
―
―
―
―
―
―
―
―
―
―
―
3850
80
Input
IP2
RF1 - RF2,
RF3
IIP2
dBm
1885
1965
1732.5
1732.5
3865
400
2132.5
2132.5
* Electrical characteristics are measured with all RF ports terminated in 50 Ω.
Measured with the recommended circuit.
6
Recommended Circuit
RF1
C1
L1
6
5
4
7
8
9
3
RF2
RF3
2
1
10
11
12
C2
V
DD
CTL
∗1 No DC blocking capacitors are required on all RF ports. (Except sourcing DC bias)
∗2 The DC levels of all RF ports are GND.
∗3 L1 (27 nH) and C1 (12 pF) are recommended on RF1 port for ESD protection.
∗4 C2 (100 pF) is recommended on VDD pin for Decoupling Capacitor.
7
Recommended Land Pattern
8
Package Outline
Product Code ： 875340755
(Unit: mm)
9
Package Outline
Product Code ： 875342695
(Unit: mm)
10
Marking
Product Code ： 875340755
11
Marking
Product Code ： 875342695
12
Tape and Reel Size
CXM3592AUR-T9
Product Code：875340755
13
Tape and Reel Size
CXM3592AUR-T9
Product Code：875342695
14
Note
Sony reserves the right to change products and specifications without prior notice.
This information does not convey any license by any implication or otherwise under any patents or other right.
Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume
responsibility for any problems arising out of the use of these circuits.
15
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