SGM2016AP [SONY]

GaAs N-channel Dual-Gate MES FET; 砷化镓N沟道双栅场效应管MES
SGM2016AP
元器件型号: SGM2016AP
生产厂家: SONY CORPORATION    SONY CORPORATION
描述和应用:

GaAs N-channel Dual-Gate MES FET
砷化镓N沟道双栅场效应管MES

晶体 小信号场效应晶体管 射频小信号场效应晶体管 光电二极管 栅 放大器
PDF文件: 总5页 (文件大小:63K)
下载文档:  下载PDF数据表文档文件
型号参数:SGM2016AP参数

SGM2016M

GaAs N-channel Dual-Gate MES FET

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51 SONY

SGM2016P

GaAs N-channel Dual-Gate MES FET

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41 SONY

SGM2019

Low Power, Low Dropout, RF-Linear Regulators

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690 SGMICRO

SGM2022

Dual, Low Dropout, 150mA RF - Linear Regulators

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416 SGMICRO

SGM2022

Dual, Low Dropout, 150mA

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98 ETC

SGM2022-AYN6/TR

Dual, Low Dropout, 150mA

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21 ETC

SGM2022-AYN6/TR

Dual, Low Dropout, 150mA RF - Linear Regulators

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26 SGMICRO

SGM2022-CYN6/TR

Dual, Low Dropout, 150mA RF - Linear Regulators

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26 SGMICRO

SGM2022-CYN6/TR

Dual, Low Dropout, 150mA

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16 ETC

SGM2022-DYN6/TR

Dual, Low Dropout, 150mA

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8 ETC

SGM2022-DYN6/TR

Dual, Low Dropout, 150mA RF - Linear Regulators

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18 SGMICRO

SGM2022-EYN6/TR

Dual, Low Dropout, 150mA RF - Linear Regulators

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88 SGMICRO

SGM2022-EYN6/TR

Dual, Low Dropout, 150mA

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43 ETC

SGM2022-GYN6/TR

Dual, Low Dropout, 150mA

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22 ETC

SGM2022-GYN6/TR

Dual, Low Dropout, 150mA RF - Linear Regulators

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24 SGMICRO