SGM5102F-T6 [SONY]

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, M-253, 4 PIN;
SGM5102F-T6
型号: SGM5102F-T6
厂家: SONY CORPORATION    SONY CORPORATION
描述:

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, M-253, 4 PIN

放大器 晶体管
文件: 总4页 (文件大小:82K)
下载:  下载PDF数据表文档文件

SGM-51T-5

Crimping tools and machines

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20 ETC

SGM5223

0.5ヘ Ultra Low ON-Resistance, Dual, SPDT Analog Switch

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534 SGMICRO

SGM5223YWQ10/TR

0.5ヘ Ultra Low ON-Resistance, Dual, SPDT Analog Switch

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106 SGMICRO

SGM6232

2A, 38V, 1.4MHz Step-Down Converter

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10 SGMICRO

SGM6232_17

2A, 38V, 1.4MHz Step-Down Converter

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1 SGMICRO

SGM6232YPS8G/TR

2A, 38V, 1.4MHz Step-Down Converter

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13 SGMICRO

SGM6603

Device Quiescent Current: 30μA (TYP)

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5 SGMICRO

SGM6603-3.3YN6G/TR

Device Quiescent Current: 30μA (TYP)

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5 SGMICRO

SGM6603-5.0YN6G/TR

Device Quiescent Current: 30μA (TYP)

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1 SGMICRO

SGM6603-ADJYN6G/TR

Device Quiescent Current: 30μA (TYP)

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5 SGMICRO

SGM6605

Device Quiescent Current: 30μA (TYP)

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2 SGMICRO

SGM6605-5.0YN6G/TR

Device Quiescent Current: 30μA (TYP)

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2 SGMICRO

SGM6605-ADJYN6G/TR

Device Quiescent Current: 30μA (TYP)

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2 SGMICRO

SGM7001

Pressure independent & temperature compensated

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0 ETC2

SGM7002

Pressure independent & temperature compensated

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0 ETC2