SLD131UL [SONY]
GaAlAs Laser Diode; GaAlAs的激光二极管型号: | SLD131UL |
厂家: | SONY CORPORATION |
描述: | GaAlAs Laser Diode |
文件: | 总7页 (文件大小:130K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SLD131UL
GaAlAs Laser Diode
Description
M-259
The SLD131UL is a low-power consumption and
low-noise laser diode developed for portable CDs.
Features
• Low current consumption IOP: 20mA (PO = 2.5mW)
• Supports single power supply.
• Low noise
Applications
• Portable CDs
Structure
• GaAlAs double hetero laser diode
• PIN photodiode to monitor laser beam output
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output
• Reverse voltage
PO
VR
4
2
mW
V
LD
PD
15
V
• Operating temperature Topr
–10 to +60 °C
–40 to +85 °C
• Storage temperature
Tstg
Connection Diagram
Pin Configuration
COMMON
3
PD
LD
2
1
2
1
3
1. LD anode
2. PD anode
3. COMMON
Bottom View
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
– 1 –
E94615-PK
SLD131UL
Electrical and Optical Characteristics (TC = 25°C)
TC : Case temperature
Item
Threshold current
Operating current
Operating voltage
Wavelength
Conditions
Symbol
Typ.
16
Max.
28
Unit
mA
mA
V
Min.
Ith
20
Po = 2.5mW
Po = 2.5mW
Po = 2.5mW
30
Iop
Vop
λp
1.9
790
1.7
2.5
810
760
nm
Po = 2.5mW
VR = 5V
Monitor current
0.11
0.08
0.6
mA
Im
39
13
20
8
45
25
degree
degree
%
Perpendicular
θ
Rediation
angle
Parallel
Asymmetry
Position
Angle
θ//
∆SR
Po = 2.5mW
25
±150
±4
µm
∆
X, ∆Y, ∆Z
Positional
accuracy
Po = 2.5mW
degree
mW/mA
µm
∆φ
ηD
AS
ID
Differential efficiency
Astigmatism
0.6
Po = 2.5mW
| Z // –Z |
0.2
0.9
15
Dark current of PD
capacitance of PD
VR = 5V
150
30
nA
VR = 5V, f = 1kHz
pF
CT
Power
SL – SR
SL + SR
∆SR =
SL SR
θ//
–7° 0° 7°
– 2 –
SLD131UL
Example of Representative Characteristics
Optical power output vs. Forward current characteristics
Far field pattern (FFP)
5.0
Tc = 10°C
20°C
30°C
40°C
50°C
60°C
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Po = 2.5mW, Tc = 25°C
Tc = 10°C
60°C
θ
θ//
IF [mA]
35
0
0
5
10
15
20
25
30
0.3
–40 –30 –20 –10
0
10
20
30
40
Imon [mA]
0.1
0.2
Angle [ ° ]
IF – Forward current [mA]
Threshold current vs. Temperature characteristics
100
Differential efficiency vs. Temperature characteristics
1.0
Po = 2.5mW
80
60
0.8
0.6
0.4
0.2
40
20
10
0.0
–20
–20
20
40
60
80
0
0
20
40
60
80
Tc – Case temperature [°C]
Tc – Case temperature [°C]
Monitor current vs. Temperature characteristics
1.0
PIN diode voltage and current characteristics
0.25
Po = 2.5mW, Tc = 25°C
Po = 2.5mW
0.8
0.6
0.4
0
0.2
0.1
–0.25
–20
0
20
40
60
80
–1.0
0.0
1.0
Tc – Case temperature [°C]
Voltage [V]
– 3 –
SLD131UL
Power dependence of far field pattern
(Parallel to junction)
Power dependence of far field pattern
(Perpendicular to junction)
Tc = 25°C
Tc = 25°C
Po = 4mW
Po = 4mW
Po = 2.5mW
Po = 2.5mW
Po = 1mW
Po = 1mW
0
–40 –30 –20 –10
0
10
20
30
40
–40 –30 –20 –10
10
20
30
40
0
Angle [ ° ]
Angle [ ° ]
Temperature dependence of far field pattern
(Parallel to junction)
Temperature dependence of far field pattern
(Perpendicular to junction)
Po = 2.5mW
Po = 2.5mW
Tc = 60°C
Tc = 50°C
Tc = 40°C
Tc = 60°C
Tc = 50°C
Tc = 40°C
Tc = 30°C
Tc = 20°C
Tc = 10°C
Tc = 30°C
Tc = 20°C
Tc = 10°C
–40 –30 –20 –10
0
10
20
30
40
–40 –30 –20 –10
10
20
30
40
0
Angle [ ° ]
Angle [ ° ]
– 4 –
SLD131UL
Power dependence of oscillating spectrum
Tc = 25°C
Po = 1mW
Po = 2.5mW
Po = 4mW
785
790
795
800
780
λ – Wavelength [nm]
– 5 –
SLD131UL
Temperature dependence of oscillating spectrum
PO = 2.5mW
Tc = 60°C
Tc = 40°C
Tc = 20°C
785
790
795
800
805
λ – Wavelength [nm]
– 6 –
SLD131UL
Package Outline
Unit: mm
M-259
Reference Slot
1.0
0.5
3
2
1
0
Window Glass φ0.8
φ5.6 – 0.05
φ4.4 MAX
φ3.8 MAX
0.5 MIN
0.6
Reference Plane
2
3
1
LD Chip & Photo Diode
3 – φ0.45
Optical
Distance = 1.35 ± 0.15
PCD φ2.0
SONY CODE
M-259
EIAJ CODE
JEDEC CODE
PACKAGE WEIGHT
0.3g
– 7 –
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