SLD131UL [SONY]

GaAlAs Laser Diode; GaAlAs的激光二极管
SLD131UL
型号: SLD131UL
厂家: SONY CORPORATION    SONY CORPORATION
描述:

GaAlAs Laser Diode
GaAlAs的激光二极管

二极管 激光二极管
文件: 总7页 (文件大小:130K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SLD131UL  
GaAlAs Laser Diode  
Description  
M-259  
The SLD131UL is a low-power consumption and  
low-noise laser diode developed for portable CDs.  
Features  
Low current consumption IOP: 20mA (PO = 2.5mW)  
Supports single power supply.  
Low noise  
Applications  
Portable CDs  
Structure  
GaAlAs double hetero laser diode  
PIN photodiode to monitor laser beam output  
Absolute Maximum Ratings (Tc = 25°C)  
Optical power output  
Reverse voltage  
PO  
VR  
4
2
mW  
V
LD  
PD  
15  
V
Operating temperature Topr  
–10 to +60 °C  
–40 to +85 °C  
Storage temperature  
Tstg  
Connection Diagram  
Pin Configuration  
COMMON  
3
PD  
LD  
2
1
2
1
3
1. LD anode  
2. PD anode  
3. COMMON  
Bottom View  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
E94615-PK  
SLD131UL  
Electrical and Optical Characteristics (TC = 25°C)  
TC : Case temperature  
Item  
Threshold current  
Operating current  
Operating voltage  
Wavelength  
Conditions  
Symbol  
Typ.  
16  
Max.  
28  
Unit  
mA  
mA  
V
Min.  
Ith  
20  
Po = 2.5mW  
Po = 2.5mW  
Po = 2.5mW  
30  
Iop  
Vop  
λp  
1.9  
790  
1.7  
2.5  
810  
760  
nm  
Po = 2.5mW  
VR = 5V  
Monitor current  
0.11  
0.08  
0.6  
mA  
Im  
39  
13  
20  
8
45  
25  
degree  
degree  
%
Perpendicular  
θ
Rediation  
angle  
Parallel  
Asymmetry  
Position  
Angle  
θ//  
SR  
Po = 2.5mW  
25  
±150  
±4  
µm  
X, Y, Z  
Positional  
accuracy  
Po = 2.5mW  
degree  
mW/mA  
µm  
∆φ  
ηD  
AS  
ID  
Differential efficiency  
Astigmatism  
0.6  
Po = 2.5mW  
| Z // –Z |  
0.2  
0.9  
15  
Dark current of PD  
capacitance of PD  
VR = 5V  
150  
30  
nA  
VR = 5V, f = 1kHz  
pF  
CT  
Power  
SL – SR  
SL + SR  
SR =  
SL SR  
θ//  
–7° 0° 7°  
– 2 –  
SLD131UL  
Example of Representative Characteristics  
Optical power output vs. Forward current characteristics  
Far field pattern (FFP)  
5.0  
Tc = 10°C  
20°C  
30°C  
40°C  
50°C  
60°C  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Po = 2.5mW, Tc = 25°C  
Tc = 10°C  
60°C  
θ
θ//  
IF [mA]  
35  
0
0
5
10  
15  
20  
25  
30  
0.3  
–40 –30 –20 –10  
0
10  
20  
30  
40  
Imon [mA]  
0.1  
0.2  
Angle [ ° ]  
IF – Forward current [mA]  
Threshold current vs. Temperature characteristics  
100  
Differential efficiency vs. Temperature characteristics  
1.0  
Po = 2.5mW  
80  
60  
0.8  
0.6  
0.4  
0.2  
40  
20  
10  
0.0  
–20  
–20  
20  
40  
60  
80  
0
0
20  
40  
60  
80  
Tc – Case temperature [°C]  
Tc – Case temperature [°C]  
Monitor current vs. Temperature characteristics  
1.0  
PIN diode voltage and current characteristics  
0.25  
Po = 2.5mW, Tc = 25°C  
Po = 2.5mW  
0.8  
0.6  
0.4  
0
0.2  
0.1  
–0.25  
–20  
0
20  
40  
60  
80  
–1.0  
0.0  
1.0  
Tc – Case temperature [°C]  
Voltage [V]  
– 3 –  
SLD131UL  
Power dependence of far field pattern  
(Parallel to junction)  
Power dependence of far field pattern  
(Perpendicular to junction)  
Tc = 25°C  
Tc = 25°C  
Po = 4mW  
Po = 4mW  
Po = 2.5mW  
Po = 2.5mW  
Po = 1mW  
Po = 1mW  
0
–40 –30 –20 –10  
0
10  
20  
30  
40  
–40 –30 –20 –10  
10  
20  
30  
40  
0
Angle [ ° ]  
Angle [ ° ]  
Temperature dependence of far field pattern  
(Parallel to junction)  
Temperature dependence of far field pattern  
(Perpendicular to junction)  
Po = 2.5mW  
Po = 2.5mW  
Tc = 60°C  
Tc = 50°C  
Tc = 40°C  
Tc = 60°C  
Tc = 50°C  
Tc = 40°C  
Tc = 30°C  
Tc = 20°C  
Tc = 10°C  
Tc = 30°C  
Tc = 20°C  
Tc = 10°C  
–40 –30 –20 –10  
0
10  
20  
30  
40  
–40 –30 –20 –10  
10  
20  
30  
40  
0
Angle [ ° ]  
Angle [ ° ]  
– 4 –  
SLD131UL  
Power dependence of oscillating spectrum  
Tc = 25°C  
Po = 1mW  
Po = 2.5mW  
Po = 4mW  
785  
790  
795  
800  
780  
λ – Wavelength [nm]  
– 5 –  
SLD131UL  
Temperature dependence of oscillating spectrum  
PO = 2.5mW  
Tc = 60°C  
Tc = 40°C  
Tc = 20°C  
785  
790  
795  
800  
805  
λ – Wavelength [nm]  
– 6 –  
SLD131UL  
Package Outline  
Unit: mm  
M-259  
Reference Slot  
1.0  
0.5  
3
2
1
0
Window Glass φ0.8  
φ5.6 – 0.05  
φ4.4 MAX  
φ3.8 MAX  
0.5 MIN  
0.6  
Reference Plane  
2
3
1
LD Chip & Photo Diode  
3 – φ0.45  
Optical  
Distance = 1.35 ± 0.15  
PCD φ2.0  
SONY CODE  
M-259  
EIAJ CODE  
JEDEC CODE  
PACKAGE WEIGHT  
0.3g  
– 7 –  

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