SLD323XT [SONY]

1W High Power Laser Diode; 1W高功率激光二极管


型号：	SLD323XT
厂家：	SONY CORPORATION
描述：	1W High Power Laser Diode 1W高功率激光二极管二极管激光二极管
文件：	总7页 (文件大小：99K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SLD323XT

1W High Power Laser Diode

Description

Equivalent Circuit

The SLD323XT is a high power, gain-guided laser diode produced

TE Cooler

by MOCVD method . Compared to the SLD300 Series, this laser

diode has a high brightness output with a doubled optical

density which can be achived by QW-SCH structure .

Fine adjustment of the oscillation wavelength is possible by controlling

the temperature using the built-in TE cooler (Peltier element).

MOCVD: Metal Organic Chemical Vapor Deposition

QW-SCH: Quantum Well Separate Confinement Heterostructure

Features

• High power

Recommended optical power output: Po = 1.0W

• Low operating current: Iop = 1.4A (Po = 1.0W)

• Flat package with built-in photo diode, TE cooler, and thermistor

Pin Configuration (Top View)

No.

Function

TE cooler (negative)

Thermistor lead 1

Applications

• Solid state laser excitation

• Medical use

Thermistor lead 2

• Material processes

• Measurement

Laser diode (anode)

Laser diode (cathode)

Photodiode (cathode)

Photodiode (anode)

TE cooler (positive)

Structure

AlGaAs quantum well structure laser diode

Operating Lifetime

MTTF 10,000H (effective value) at Po = 1.0W, Tth = 25°C

Absolute Maximum Ratings (Tth = 25°C)

• Optical power output

• Reverse voltage

V^R

1.1

• Operating temperature (Tth)

• Storage temperature

Topr

Tstg

–10 to +30

–40 to +85

°C

Warranty

This warranty period shall be 90 days after receipt of the product or

1,000 hours operation time whichever is shorter.

Sony Quality Assurance Department shall analyze any product that

fails during said warranty period, and if the analysis results show

that the product failed due to material or manufacturing defects on

the part of Sony, the product shall be replaced free of charge.

Laser diodes naturally have differing lifetimes which follow a Weibull

distribution.

Special warranties are also available.

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

E93208B02-PS

SLD323XT

Electrical and Optical Characteristics

Item

(Tth: Thermistor temperature, Tth = 25°C)

Min.

Conditions

Typ.

0.3

1.4

2.1

Max.

0.5

Unit

Symbol

Ith

Threshold current

Operating current

Operating voltage

Wavelength

Iop

Vop

λp

PO = 1.0W

2.0

3.0

790

0.3

840

PO = 1.0W

VR = 10V

Monitor current

Imon

1.5

6.0

Perpendicular

degree

µm

Radiation angle

PO = 1.0W

Parallel

θ//

Position

∆X, ∆Y

∆φ

±100

±3

Positional accuracy

Angle

degree

W/A

Differential efficiency

ηD

PO = 1.0W

Tth = 25°C

0.5

0.9

Thermistor resistance

Rth

kΩ

Wavelength Selection Classification

Type

Wavelength (nm)

795 ± 5

SLD323XT-1

SLD323XT-2

SLD323XT-3

810 ± 10

830 ± 10

Type

Wavelength (nm)

798 ± 3

SLD323XT-21

SLD323XT-24

SLD323XT-25

807 ± 3

810 ± 3

Handling Precautions

Eye protection against laser beams

Safety goggles for

protection from

laser beam

Lens

The optical output of laser diodes ranges from

several mW to 3W. However the optical power

density of the laser beam at the diode chip

reaches 1MW/cm². Unlike gas lasers, since

laser diode beams are divergent, uncollimated

laser diode beams are fairly safe at a laser

diode. For observing laser beams, ALWAYS use

safety goggles that block infrared rays. Usage of

IR scopes, IR cameras and fluorescent plates is

also recommended for monitoring laser beams

safely.

Laser diode

Optical

material

IR fluorescent plate

Optical boad

Optical power output control device

temperature control device

– 2 –

SLD323XT

Example of Representative Characteristics

Optical power output vs. Forward current characteristics

Optical power output vs. Monitor current characteristics

1500

Tth = 25°C

Tth = 15°C

Tth = 0°C

Tth = –10°C

1000

500

Tth = 0°C

1200

900

600

300

Tth = 25°C

Tth = 30°C

Tth = –10°C

Tth = 30°C

400

800

1200

1600

2000

1.5

IF – Forward current [mA]

Imon – Monitor current [mA]

Power dependence of far field pattern

(Parallel to junction)

Threshold current vs. Temperature characteristics

1000

Tth = 25°C

500

PO = 1000mW

PO = 800mW

PO = 600mW

PO = 400mW

PO = 200mW

100

–10

–90

–60

–30

Tth – Thermistor temperature [°C]

Angle [degree]

Power dependence of far field pattern

(Perpendicular to junction)

Tempareture dependence of far field pattern

(Parallel to junction)

Tth = 25°C

PO = 1000mW

PO = 800mW

PO = 600mW

Tth = 25°C

Tth = 10°C

Tth = –5°C

PO = 400mW

PO = 200mW

–90

–60

–30

–90

–60

–30

Angle [degree]

– 3 –

SLD323XT

Temperature dependence of far field pattern

(Perpendicular to junction)

Dependence of wavelength

Po = 1000mW

PO = 1000mW

820

810

800

790

Tth = 25°C

Tth = 10°C

Tth = –5°C

–90

–60

–30

–10

Angle [degree]

Tth – Thermistor temperature [°C]

Thermistor characteristics

Differential efficiency vs. Temperature characteristics

1.0

0.5

–10

0 10 20 30 40 50 60 70

–10

Tth – Thermistor temperature [°C]

TE cooler characteristics

TE cooler characteristics 1

TE cooler characteristics 2

Tc = 33°C

Tth = 25°C

IT = 2.5A

2.0A

∆T VS VT

1.5A

1.0A

2.0A

0.5A

2.0A

100

∆T – Temperature difference [°C]

∆T: Tc – Tth

Tth: Thermistor temperature

Tc: Case temperature

– 4 –

SLD323XT

Power dependence of spectrum

1.0

0.8

0.6

0.4

0.2

Tth = 25°C

Po = 400mW

Tth = 25°C

Po = 600mW

0.8

0.6

0.4

0.2

802

804

806

808

810

802

804

806

808

810

Wavelength [nm]

1.0

0.8

0.6

0.4

0.2

1.0

0.8

0.6

0.4

0.2

Tth = 25°C

Po = 800mW

Tth = 25°C

Po = 1000mW

802

804

806

808

810

802

804

806

808

810

Wavelength [nm]

– 5 –

SLD323XT

Temperature dependence of spectrum (Po = 1000mW)

1.0

0.8

0.6

0.4

0.2

Tth = –10°C

Tth = 0°C

0.8

0.6

0.4

0.2

790

795

800

805

810

815

820

790

795

800

805

810

815

820

Wavelength [nm]

1.0

0.8

0.6

0.4

0.2

Tth = 25°C

Tth = 30°C

0.8

0.6

0.4

0.2

790

795

800

805

810

815

820

790

795

800

805

810

815

820

Wavelength [nm]

– 6 –

SLD323XT

Package Outline

Unit: mm

M – 273(LO – 10)

+ 0.05

33.0 ± 0.05

4 – Ø3.0

Window

Glass

Ø5.0

4 – R1.2 ± 0.3

8 – Ø0.6

2.54

38.0 ± 0.5

LD Chip

19.0

28.0 ± 0.5

Reference Plane

16.5 ± 0.1

*Distance between pilot hole and emittng area

PACKAGE STRUCTURE

SONY CODE

M-273(LO-10)

43g

PACKAGE WEIGHT

EIAJ CODE

JEDEC CODE

– 7 –

Sony Corporation

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