AM29DS323DB110WMF [SPANSION]
Flash, 2MX16, 110ns, PBGA48, 6 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48;型号: | AM29DS323DB110WMF |
厂家: | SPANSION |
描述: | Flash, 2MX16, 110ns, PBGA48, 6 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48 内存集成电路 闪存 |
文件: | 总57页 (文件大小:999K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Am29DS323D
Data Sheet
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For More Information
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Publication Number 23480 Revision A Amendment +4 Issue Date January 25, 2005
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January 25, 2005
Am29DS323D
32 Megabit (4 M x 8-Bit/2 M x 16-Bit)
CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Minimum 1 million write cycles guaranteed per sector
■ Simultaneous Read/Write operations
■ 20 Year data retention at 125°C
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Reliable operation for the life of the system
SOFTWARE FEATURES
— Zero latency between read and write operations
■ Data Management Software (DMS)
■ Multiple bank architectures
— AMD-supplied software manages data programming
and erasing, enabling EEPROM emulation
— Two devices available with different bank sizes (refer
to Table 3)
— Eases sector erase limitations
■ Secured Silicon Sector
■ Supports Common Flash Memory Interface (CFI)
— Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
■ Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
same bank
■ Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
— Customer lockable: Can be read, programmed, or
erased just like other sectors. Once locked, data
cannot be changed
■ Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
— 64 Kbyte sector size
■ Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero
HARDWARE FEATURES
■ Any combination of sectors can be erased
■ Package options
— 48-ball FBGA
— 48-pin TSOP
■ Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
■ Hardware reset pin (RESET#)
■ Top or bottom boot block
— Hardware method of resetting the internal state
machine to reading array data
■ Manufactured on 0.23 µm process technology
■ Compatible with JEDEC standards
■ WP#/ACC input pin
— Pinout and software compatible with
single-power-supply flash standard
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect status
— Acceleration (ACC) function provides accelerated
program times
PERFORMANCE CHARACTERISTICS
■ High performance
■ Sector protection
— Access time as fast 110 ns
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Program time: 13 µs/word typical;
with Accelerate function, 7 µs/word typical
■ Ultra low power consumption (typical values)
— 1 mA active read current at 1 MHz
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
— 5 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
Publication# 23480 Rev: A Amendment/+4
Issue Date: January 25, 2005
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Refer to AMD’s Website (www.amd.com) for the latest information.
D A T A S H E E T
GENERAL DESCRIPTION
The Am29DS323D family consists of 32 megabit, 1.8
volt-only flash memory devices, organized as
2,097,152 words of 16 bits each or 4,194,304 bytes of
8 bits each. Word mode data appears on DQ0–DQ15;
byte mode data appears on DQ0–DQ7. The device is
designed to be programmed in-system with the stan-
dard 1.8 volt VCC supply, and can also be programmed
in standard EPROM programmers.
removal of EEPROM devices. DMS also allows the
system software to be simplified, as it performs all
functions necessary to modify data in file structures,
as opposed to single-byte modifications. To write or
update a particular piece of data (a phone number or
configuration data, for example), the user only needs
to state which piece of data is to be updated, and
where the updated data is located in the system. This
is an advantage compared to systems where
user-written software must keep track of the old data
location, status, logical to physical translation of the
data onto the Flash memory device (or memory de-
vices), and more. Using DMS, user-written software
does not need to interface with the Flash memory di-
rectly. Instead, the user's software accesses the Flash
memory by calling one of only six functions. AMD pro-
vides this software to simplify system design and
software integration efforts.
The device is available with an access time of 110 and
120 ns. The devices are offered in an 48-ball FBGA
package. Standard control pins—chip enable (CE#),
write enable (WE#), and output enable (OE#)—control
normal read and write operations, and avoid bus con-
tention issues.
The device requires only a single 1.8 volt power sup-
ply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The device offers complete compatibility with the
JEDEC single-power-supply Flash command set
standard. Commands are written to the command
register using standard microprocessor write timings.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
Simultaneous Read/Write Operations with
Zero Latency
The Simultaneous Read/Write architecture provides
simultaneous operation by dividing the memory
space into two banks. The device can improve overall
system performance by allowing a host system to pro-
gram or erase in one bank, then immediately and
simultaneously read from the other bank, with zero la-
tency. This releases the system from waiting for the
completion of program or erase operations.
The host system can detect whether a program or
erase operation is complete by using the device sta-
tus bits: RY/BY# pin, DQ7 (Data# Polling) and
DQ6/DQ2 (toggle bits). After a program or erase cycle
has been completed, the device automatically returns
to reading array data.
Am29DS323D Features
The sector erase architecture allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
The Secured Silicon Sector is an additional 64
Kbyte sector capable of being permanently locked by
AMD or customers. The Secured Silicon Sector Indi-
cator Bit (DQ7) is permanently set to a 1 if the part is
factory locked, and set to a 0 if customer lockable.
This way, customer lockable parts can never be used
to replace a factory locked part.
Hardware data protection measures include a low
VCC detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved in-system or via
programming equipment.
Factory locked parts provide several options. The Se-
cured Silicon Sector may store a secure, random 16
byte ESN (Electronic Serial Number), customer code
(programmed through AMD’s ExpressFlash service),
or both. Customer Lockable parts may utilize the Se-
cured Silicon Sector as bonus space, reading and
writing like any other flash sector, or may permanently
lock their own code there.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the
standby mode. Power consumption is greatly re-
duced in both modes.
DMS (Data Management Software) allows systems
to easily take advantage of the advanced architecture
of the simultaneous read/write product line by allowing
2
Am29DS323D
D A T A S H E E T
TABLE OF CONTENTS
Figure 3. Program Operation ......................................................... 26
Chip Erase Command Sequence ........................................... 26
Sector Erase Command Sequence ........................................ 26
Erase Suspend/Erase Resume Commands ...........................27
Figure 4. Erase Operation.............................................................. 27
Command Definitions ............................................................. 28
Table 14. Am29DS323D Command Definitions.............................. 28
Write Operation Status . . . . . . . . . . . . . . . . . . . . 29
DQ7: Data# Polling ................................................................. 29
Figure 5. Data# Polling Algorithm .................................................. 29
RY/BY#: Ready/Busy# ............................................................ 30
DQ6: Toggle Bit I .................................................................... 30
Figure 6. Toggle Bit Algorithm........................................................ 30
DQ2: Toggle Bit II ................................................................... 31
Reading Toggle Bits DQ6/DQ2 ............................................... 31
DQ5: Exceeded Timing Limits ................................................ 31
DQ3: Sector Erase Timer ....................................................... 31
Table 15. Write Operation Status ................................................... 32
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 33
Figure 7. Maximum Negative Overshoot Waveform ..................... 33
Figure 8. Maximum Positive Overshoot Waveform....................... 33
Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 33
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 9. ICC1 Current vs. Time (Showing Active and
Continuity of Specifications ...................................................... 1
Continuity of Ordering Part Numbers ....................................... 1
For More Information ................................................................ 1
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5
Special Handling Instructions for FBGA Package .................... 6
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 9
Table 1. Am29DS323D Device Bus Operations ...............................9
Word/Byte Configuration .......................................................... 9
Requirements for Reading Array Data ..................................... 9
Writing Commands/Command Sequences ............................ 10
Accelerated Program Operation ......................................................10
Autoselect Functions .......................................................................10
Simultaneous Read/Write Operations with Zero Latency ....... 10
Standby Mode ........................................................................ 10
Automatic Sleep Mode ........................................................... 10
RESET#: Hardware Reset Pin ............................................... 11
Output Disable Mode .............................................................. 11
Table 2. Am29DS323D Device Bank Divisions ...............................11
Table 3. Top Boot Sector Addresses (Am29DS32xDT) ..................12
Table 4. SecSi™ Sector Addresses for Top Boot Devices ............. 13
Table 5. Bottom Boot Sector Addresses (Am29DS32xDB) ............14
Table 6. SecSi™ Sector Addresses for Bottom Boot Devices ....... 15
Autoselect Mode ..................................................................... 16
Table 7. Am29DS323D Autoselect Codes (High Voltage Method) 16
Sector/Sector Block Protection and Unprotection .................. 17
Table 8. Top Boot Sector/Sector Block Addresses
Automatic Sleep Currents)............................................................. 35
Figure 10. Typical ICC1 vs. Frequency............................................ 35
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 11. Test Setup.................................................................... 36
Table 16. Test Specifications ......................................................... 36
Figure 12. Input Waveforms and Measurement Levels ................. 36
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 13. Read Operation Timings............................................... 37
Figure 14. Reset Timings............................................................... 38
Word/Byte Configuration (BYTE#) .......................................... 39
Figure 15. BYTE# Timings for Read Operations............................ 39
Figure 16. BYTE# Timings for Write Operations............................ 39
Erase and Program Operations .............................................. 40
Figure 17. Program Operation Timings.......................................... 41
Figure 18. Accelerated Program Timing Diagram.......................... 41
Figure 19. Chip/Sector Erase Operation Timings .......................... 42
Figure 20. Back-to-back Read/Write Cycle Timings ...................... 43
Figure 21. Data# Polling Timings (During Embedded Algorithms). 44
Figure 22. Toggle Bit Timings (During Embedded Algorithms)...... 45
Figure 23. DQ2 vs. DQ6................................................................. 45
Figure 24. Temporary Sector/Sector Block
for Protection/Unprotection .............................................................17
Table 9. Bottom Boot Sector/Sector Block
Addresses for Protection/Unprotection ...........................................17
Write Protect (WP#) ................................................................ 18
Temporary Sector/Sector Block Unprotect ............................. 18
Figure 1. Temporary Sector Unprotect Operation........................... 18
Figure 2. In-System Sector/Sector Block Protect
and Unprotect Algorithms................................................................ 19
SecSi™ (Secured Silicon) Sector Flash Memory Region ....... 20
Hardware Data Protection ...................................................... 20
Low VCC Write Inhibit .....................................................................20
Write Pulse “Glitch” Protection ........................................................21
Logical Inhibit ..................................................................................21
Power-Up Write Inhibit ....................................................................21
Common Flash Memory Interface (CFI) . . . . . . . 21
Table 10. CFI Query Identification String........................................ 21
Table 11. System Interface String................................................... 22
Table 12. Device Geometry Definition ............................................ 22
Table 13. Primary Vendor-Specific Extended Query ...................... 23
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 24
Reading Array Data ................................................................ 24
Reset Command ..................................................................... 24
Autoselect Command Sequence ............................................ 24
Enter SecSiTM Sector/Exit SecSi Sector
Unprotect Timing Diagram ............................................................. 46
Figure 25. Sector/Sector Block Protect/Unprotect Timing Diagram 47
Figure 26. Alternate CE# Controlled Write
(Erase/Program) Operation Timings .............................................. 49
Erase And Programming Performance . . . . . . . 50
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 50
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
FBD048—48-ball Fine-Pitch Ball Grid Array (FBGA)
6 x 12 mm package ................................................................ 51
TS 048—48-Pin Standard TSOP ............................................ 52
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 53
Revision A (December 1, 1999) ..............................................53
Publication Number 23480, Revision A (January 25, 2000) ... 53
Revision A+1 (June 16, 2000) ................................................ 53
Command Sequence .............................................................. 25
Byte/Word Program Command Sequence ............................. 25
Unlock Bypass Command Sequence ..............................................25
Am29DS323D
3
D A T A S H E E T
Revision A+2 (November 1, 2000) ......................................... 53
Revision A+3 (November 22, 2000) ....................................... 53
Revision A+4 (January 24, 2005) ........................................... 53
4
Am29DS323D
D A T A S H E E T
PRODUCT SELECTOR GUIDE
Part Number
Am29DS323D
Speed Option
Standard Voltage Range: VCC = 1.8–2.2 V
110
110
110
50
120
120
120
50
Max Access Time (ns)
CE# Access (ns)
OE# Access (ns)
BLOCK DIAGRAM
OE# BYTE#
V
V
CC
SS
Upper Bank Address
A0–A20
Upper Bank
RY/BY#
X-Decoder
A0–A20
RESET#
STATE
CONTROL
&
COMMAND
REGISTER
WE#
CE#
Status
DQ0–DQ15
BYTE#
Control
WP#/ACC
DQ0–DQ15
X-Decoder
Lower Bank
A0–A20
Lower Bank Address
OE# BYTE#
Am29DS323D
5
D A T A S H E E T
CONNECTION DIAGRAMS
A15
A14
A13
A12
A11
A10
A9
A8
1
2
3
4
5
6
7
8
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
A19
A20
9
48-Pin Standard TSOP
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
WE#
RESET#
NC
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
6
Am29DS323D
D A T A S H E E T
CONNECTION DIAGRAMS
48-Ball FBGA
Top View, Balls Facing
Down
C7
D7
E7
F7
G7
H7
J7
K7
VSS
A13
A12
A14
A15
A16
BYTE# DQ15/A-1
C6
A9
D6
A8
E6
F6
G6
H6
J6
K6
A10
A11
DQ7
DQ14
DQ13
DQ6
C5
D5
E5
F5
G5
H5
J5
K5
VCC
WE# RESET#
NC
A19
DQ5
DQ12
DQ4
C4 D4
E4
F4
G4
H4
J4
K4
RY/BY# WP#/ACC A18
A20
DQ2
DQ10
DQ11
DQ3
C3
A7
D3
E3
A6
F3
A5
G3
H3
J3
K3
A17
DQ0
DQ8
DQ9
DQ1
C2
A3
D2
A4
E2
A2
F2
A1
G2
A0
H2
J2
K2
VSS
CE#
OE#
Flash memory devices in FBGA packages may be
damaged if exposed to ultrasonic cleaning methods.
The package and/or data integrity may be compro-
mised if the package body is exposed to temperatures
above 150°C for prolonged periods of time.
Special Handling Instructions for FBGA
Package
Special handling is required for Flash Memory prod-
ucts in FBGA packages.
Am29DS323D
7
D A T A S H E E T
PIN DESCRIPTION
LOGIC SYMBOL
A0–A20
= 21 Addresses
21
DQ0–DQ14 = 15 Data Inputs/Outputs
A0–A20
16 or 8
DQ15/A-1
= DQ15 (Data Input/Output, word
mode), A-1 (LSB Address Input, byte
mode)
DQ0–DQ15
(A-1)
CE#
OE#
CE#
OE#
WE#
= Chip Enable
= Output Enable
= Write Enable
WE#
WP#/ACC
RESET#
BYTE#
WP#/ACC = Hardware Write Protect/
Acceleration Pin
RY/BY#
RESET#
BYTE#
RY/BY#
VCC
= Hardware Reset Pin, Active Low
= Selects 8-bit or 16-bit mode
= Ready/Busy Output
= 1.8 volt-only single power supply
(see Product Selector Guide for speed
options and voltage supply toler-
ances)
VSS
NC
= Device Ground
= Pin Not Connected Internally
8
Am29DS323D
D A T A S H E E T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid
Combination) is formed by a combination of the following:
Am29DS323D
T
110
WM
I
OPTIONAL PROCESSING
Blank = Standard Processing
N
=
16-byte ESN devices
(Contact an AMD representative for more information)
TEMPERATURE RANGE
F
I
=
=
Industrial (–40°C to +85°C) with Pb-free Package
Industrial (–40°C to +85°C)
PACKAGE TYPE
E
=
48-Pin Thin Small Outline Package
(TSOP) Standard Pinout (TS 048)
WM
=
48-Ball Fine-Pitch Ball Grid Array (FBGA)
0.80 mm pitch, 6 x 12 mm package (FBD048)
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T
B
=
=
Top sector
Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29DS323D
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS Flash Memory
1.8 Volt-only Read, Program, and Erase
Valid Combinations for TSOP Packages
Order Number
Valid Combinations for FBGA Packages
Order Number Package Marking
Am29DS323DT110,
Am29DS323DT110,
S323DT11U,
S323DB11U
Am29DS323DB110
Am29DS323DB110
WMI,
WMF
EI, EF
I, F
Am29DS323DT120,
Am29DS323DB120
Am29DS323DT120,
Am29DS323DB120
S323DT12U,
S323DB12U
Valid Combinations
Valid Combinations list configurations planned to be supported in
volume for this device. Consult the local AMD sales office to con-
firm availability of specific valid combinations and to check on
newly released combinations.
Am29DS323D
9
D A T A S H E E T
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The register is a latch used to store the
commands, along with the address and data informa-
tion needed to execute the command. The contents of
the register serve as inputs to the internal state ma-
chine. The state machine outputs dictate the function
of the device. Table 1 lists the device bus operations,
the inputs and control levels they require, and the re-
sulting output. The following subsections describe
each of these operations in further detail.
Table 1. Am29DS323D Device Bus Operations
DQ8–DQ15
Addresses
(Note 2)
DQ0– BYTE# BYTE#
Operation
CE# OE# WE# RESET# WP#/ACC
DQ7
DOUT
DIN
= VIH
DOUT
DIN
= VIL
Read
Write
L
L
L
H
L
H
H
L/H
AIN
AIN
DQ8–DQ14=High-Z,
DQ15 = A-1
H
(Note 3)
VCC
0.3 V
VCC
0.3 V
Standby
X
X
H
X
High-Z High-Z
High-Z
Output Disable
Reset
L
H
X
H
X
H
L
L/H
L/H
X
X
High-Z High-Z
High-Z High-Z
High-Z
High-Z
X
SA, A6 = L,
A1 = H, A0 = L
Sector Protect (Note 2)
L
H
L
VID
L/H
DIN
X
X
SA, A6 = H,
A1 = H, A0 = L
Sector Unprotect (Note 2)
Temporary Sector Unprotect
L
H
X
L
VID
VID
(Note 3)
(Note 3)
DIN
DIN
X
X
X
X
AIN
DIN
High-Z
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 9.0–11.0 V, VHH = 9.0 0.ꢀ V, X = Don’t Care, SA = Sector Address,
IN = Address In, DIN = Data In, DOUT = Data Out
A
Notes:
1. Addresses are A20:A0 in word mode (BYTE# = VIH), A20:A-1 in byte mode (BYTE# = VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See Sector/Sector
Block Protection and Unprotection.
3. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, the two outermost boot sector
protection depends on whether they were last protected or unprotected using the method described in Sector/Sector Block
Protection and Unprotection. If WP#/ACC = VHH, all sectors are unprotected.
Word/Byte Configuration
Requirements for Reading Array Data
The BYTE# pin controls whether the device data I/O
pins operate in the byte or word configuration. If the
BYTE# pin is set at logic ‘1’, the device is in word con-
figuration, DQ0–DQ15 are active and controlled by
CE# and OE#.
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output con-
trol and gates array data to the output pins. WE#
should remain at VIH. The BYTE# pin determines
whether the device outputs array data in words or
bytes.
If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are
active and controlled by CE# and OE#. The data I/O
pins DQ8–DQ14 are tri-stated, and the DQ15 pin is
used as an input for the LSB (A-1) address function.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No com-
mand is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
10
Am29DS323D
D A T A S H E E T
addresses on the device address inputs produce valid
V
HH from the WP#/ACC pin returns the device to nor-
data on the device data outputs. Each bank remains
enabled for read access until the command register
contents are altered.
mal operation. Note that the WP#/ACC pin must not
be at VHH for operations other than accelerated pro-
gramming, or device damage may result. In addition,
the WP#/ACC pin must not be left floating or uncon-
nected; inconsistent behavior of the device may result.
See Requirements for Reading Array Data for more in-
formation. Refer to the AC Memory Array Read-Only
Operations table for timing specifications and to
Figure 13 for the timing diagram. ICC1 in the DC Char-
acteristics table represents the active current
specification for reading array data.
Autoselect Functions
If the system writes the autoselect command se-
quence, the device enters the autoselect mode. The
system can then read autoselect codes from the inter-
nal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in
this mode. See Autoselect Mode and Autoselect Com-
mand Sequence for more information.
Writing Commands/Command Sequences
To write a command or command sequence (which in-
cludes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
Simultaneous Read/Write Operations
with Zero Latency
For program operations, the BYTE# pin determines
whether the device accepts program data in bytes or
words. See Word/Byte Configuration for more
information.
This device is capable of reading data from one bank
of memory while programming or erasing in the other
bank of memory. An erase operation may also be sus-
pended to read from or program to another location
within the same bank (except the sector being
erased). Figure 20 shows how read and write cycles
may be initiated for simultaneous operation with zero
latency. ICC6 and ICC7 in the DC Characteristics table
represent the current specifications for read-while-pro-
gram and read-while-erase, respectively.
The device features an Unlock Bypass mode to facil-
itate faster programming. Once a bank enters the
Unlock Bypass mode, only two write cycles are re-
quired to program a word or byte, instead of four.
Word/Byte Configuration has details on programming
data to the device using both standard and Unlock By-
pass command sequences.
An erase operation can erase one sector, multiple sec-
tors, or the entire device. Tables 3–6 indicate the
address space that each sector occupies. The device
address space is divided into two banks: Bank 1 con-
tains the boot/parameter sectors, and Bank 2 contains
the larger, code sectors of uniform size. A bank ad-
dress is the address bits required to uniquely select a
bank. Similarly, a sector address is the address bits re-
quired to uniquely select a sector.
Standby Mode
When the system is not reading or writing to the de-
vice, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VCC 0.3 V.
(Note that this is a more restricted voltage range than
VIH.) If CE# and RESET# are held at VIH, but not within
VCC 0.3 V, the device is in the standby mode, but the
standby current is greater. The device requires stan-
dard access time (tCE) for read access when the
device is in either of these standby modes, before it is
ready to read data.
ICC2 in the DC Characteristics table represents the ac-
tive current specification for the write mode. AC
Characteristics contain timing specification tables and
timing diagrams for write operations.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. This is one of two functions
provided by the WP#/ACC pin. This function is prima-
rily intended to allow faster manufacturing throughput
at the factory.
If the device is deselected during erasure or program-
ming, the device draws active current until the
operation is completed.
ICC3 in the DC Characteristics table represents the
standby current specification.
If the system asserts VHH on this pin, the device auto-
matically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the
time required for program operations. The system
would use a two-cycle program command sequence
as required by the Unlock Bypass mode. Removing
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device en-
ergy consumption. The device automatically enables
this mode when addresses remain stable for tACC
30 ns. The automatic sleep mode is independent of
+
Am29DS323D
11
D A T A S H E E T
the CE#, WE#, and OE# control signals. Standard ad-
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
dress access timings provide new data when
addresses are changed. While in sleep mode, output
data is latched and always available to the system.
ICC4 in the DC Characteristics table represents the
automatic sleep mode current specification.
If RESET# is asserted during a program or erase op-
eration, the RY/BY# pin remains a 0 (busy) until the
internal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The
system can thus monitor RY/BY# to determine
whether the reset operation is complete. If RESET# is
asserted when a program or erase operation is not ex-
ecuting (RY/BY# pin is 1), the reset operation is
completed within a time of tREADY (not during Embed-
ded Algorithms). The system can read data tRH after
the RESET# pin returns to VIH.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of re-
setting the device to reading array data. When the
RESET# pin is driven low for at least a period of tRP,
the device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state ma-
chine to reading array data. The operation that was
interrupted should be reinitiated once the device is
ready to accept another command sequence, to en-
sure data integrity.
See the AC Characteristics tables for RESET# param-
eters and to Figure 14 for the timing diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high
impedance state.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS 0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is held
at VIL but not within VSS 0.3 V, the standby current is
greater.
Table 2. Am29DS323D Device Bank Divisions
Bank 1
Bank 2
Sector Sizes
Device
Part Number
Megabits
Sector Sizes
Megabits
Eight 8 Kbyte/4 Kword,
fifteen 64 Kbyte/32 Kword
Forty-eight
64 Kbyte/32 Kword
Am29DS323D
8 Mbit
24 Mbit
12
Am29DS323D
D A T A S H E E T
Table 3. Top Boot Sector Addresses (Am29DS32xDT)
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
(x16)
Address Range
Sector
Address Range
SA0
SA1
000000xxx
000001xxx
000010xxx
000011xxx
000100xxx
000101xxx
000110xxx
000111xxx
001000xxx
001001xxx
001010xxx
001011xxx
001100xxx
001101xxx
001110xxx
001111xxx
010000xxx
010001xxx
010010xxx
010011xxx
010100xxx
010101xxx
010110xxx
010111xxx
011000xxx
011001xxx
011010xxx
011011xxx
011100xxx
011101xxx
011110xxx
011111xxx
100000xxx
100001xxx
100010xxx
100011xxx
100100xxx
100101xxx
100110xxx
100111xxx
101000xxx
101001xxx
101010xxx
101011xxx
101100xxx
101101xxx
101110xxx
101111xxx
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
000000h–00FFFFh
010000h–01FFFFh
020000h–02FFFFh
030000h–03FFFFh
040000h–04FFFFh
050000h–05FFFFh
060000h–06FFFFh
070000h–07FFFFh
080000h–08FFFFh
090000h–09FFFFh
0A0000h–0AFFFFh
0B0000h–0BFFFFh
0C0000h–0CFFFFh
0D0000h–0DFFFFh
0E0000h–0EFFFFh
0F0000h–0FFFFFh
100000h–10FFFFh
110000h–11FFFFh
120000h–12FFFFh
130000h–13FFFFh
140000h–14FFFFh
150000h–15FFFFh
160000h–16FFFFh
170000h–17FFFFh
180000h–18FFFFh
190000h–19FFFFh
1A0000h–1AFFFFh
1B0000h–1BFFFFh
1C0000h–1CFFFFh
1D0000h–1DFFFFh
1E0000h–1EFFFFh
1F0000h–1FFFFFh
200000h–20FFFFh
210000h–21FFFFh
220000h–22FFFFh
230000h–23FFFFh
240000h–24FFFFh
250000h–25FFFFh
260000h–26FFFFh
270000h–27FFFFh
280000h–28FFFFh
290000h–29FFFFh
2A0000h–2AFFFFh
2B0000h–2BFFFFh
2C0000h–2CFFFFh
2D0000h–2DFFFFh
2E0000h–2EFFFFh
2F0000h–2FFFFFh
000000h–07FFFh
008000h–0FFFFh
010000h–17FFFh
018000h–01FFFFh
020000h–027FFFh
028000h–02FFFFh
030000h–037FFFh
038000h–03FFFFh
040000h–047FFFh
048000h–04FFFFh
050000h–057FFFh
058000h–05FFFFh
060000h–067FFFh
068000h–06FFFFh
070000h–077FFFh
078000h–07FFFFh
080000h–087FFFh
088000h–08FFFFh
090000h–097FFFh
098000h–09FFFFh
0A0000h–0A7FFFh
0A8000h–0AFFFFh
0B0000h–0B7FFFh
0B8000h–0BFFFFh
0C0000h–0C7FFFh
0C8000h–0CFFFFh
0D0000h–0D7FFFh
0D8000h–0DFFFFh
0E0000h–0E7FFFh
0E8000h–0EFFFFh
0F0000h–0F7FFFh
0F8000h–0FFFFFh
100000h–107FFFh
108000h–10FFFFh
110000h–117FFFh
118000h–11FFFFh
120000h–127FFFh
128000h–12FFFFh
130000h–137FFFh
138000h–13FFFFh
140000h–147FFFh
148000h–14FFFFh
150000h–157FFFh
158000h–15FFFFh
160000h–167FFFh
168000h–16FFFFh
170000h–177FFFh
178000h–17FFFFh
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
SA38
SA39
SA40
SA41
SA42
SA43
SA44
SA45
SA46
SA47
Am29DS323D
13
D A T A S H E E T
Table 3. Top Boot Sector Addresses (Am29DS32xDT) (Continued)
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
(x16)
Address Range
Sector
Address Range
SA48
SA49
SA50
SA51
SA52
SA53
SA54
SA55
SA56
SA57
SA58
SA59
SA60
SA61
SA62
SA63
SA64
SA65
SA66
SA67
SA68
SA69
SA70
110000xxx
110001xxx
110010xxx
110011xxx
110100xxx
110101xxx
110110xxx
110111xxx
111000xxx
111001xxx
111010xxx
111011xxx
111100xxx
111101xxx
111110xxx
111111000
111111001
111111010
111111011
111111100
111111101
111111110
111111111
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
8/4
300000h–30FFFFh
310000h–31FFFFh
320000h–32FFFFh
330000h–33FFFFh
340000h–34FFFFh
350000h–35FFFFh
360000h–36FFFFh
370000h–37FFFFh
380000h–38FFFFh
390000h–39FFFFh
3A0000h–3AFFFFh
3B0000h–3BFFFFh
3C0000h–3CFFFFh
3D0000h–3DFFFFh
3E0000h–3EFFFFh
3F0000h–3F1FFFh
3F2000h–3F3FFFh
3F4000h–3F5FFFh
3F6000h–3F7FFFh
3F8000h–3F9FFFh
3FA000h–3FBFFFh
3FC000h–3FDFFFh
3FE000h–3FFFFFh
180000h–187FFFh
188000h–18FFFFh
190000h–197FFFh
198000h–19FFFFh
1A0000h–1A7FFFh
1A8000h–1AFFFFh
1B0000h–1B7FFFh
1B8000h–1BFFFFh
1C0000h–1C7FFFh
1C8000h–1CFFFFh
1D0000h–1D7FFFh
1D8000h–1DFFFFh
1E0000h–1E7FFFh
1E8000h–1EFFFFh
1F0000h–1F7FFFh
1F8000h–1F8FFFh
1F9000h–1F9FFFh
1FA000h–1FAFFFh
1FB000h–1FBFFFh
1FC000h–1FCFFFh
1FD000h–1FDFFFh
1FE000h–1FEFFFh
1FF000h–1FFFFFh
8/4
8/4
8/4
8/4
8/4
8/4
8/4
Note: The address range is A20:A-1 in byte mode (BYTE#=VIL) or A20:A0 in word mode (BYTE#=VIH). The bank address bits are A20 and A19
for Am29DS323DT.
Table 4. Secured Silicon Sector Addresses for Top Boot Devices
Sector Address
A20–A12
(x8)
(x16)
Address Range
Secured Silicon Sector
Entire Sector
Size
Address Range
111111xxx
000000xxx
64 Kbytes/32 Kwords
16 bytes/8 words
3F0000h–3FFFFFh
3F0780h–3FF78Fh
1F8000h–1FFFFh
1F83C0h–1F83C7h
Factory Programmed ESN
14
Am29DS323D
D A T A S H E E T
Table 5. Bottom Boot Sector Addresses (Am29DS32xDB)
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
(x16)
Address Range
Sector
Address Range
SA0
SA1
000000000
000000001
000000010
000000011
000000100
000000101
000000110
000000111
000001xxx
000010xxx
000011xxx
000100xxx
000101xxx
000110xxx
000111xxx
001000xxx
001001xxx
001010xxx
001011xxx
001100xxx
001101xxx
001110xxx
001111xxx
010000xxx
010001xxx
010010xxx
010011xxx
010100xxx
010101xxx
010110xxx
010111xxx
011000xxx
011001xxx
011010xxx
011011xxx
011100xxx
011101xxx
011110xxx
8/4
000000h-001FFFh
002000h-003FFFh
004000h-005FFFh
006000h-007FFFh
008000h-009FFFh
00A000h-00BFFFh
00C000h-00DFFFh
00E000h-00FFFFh
010000h-01FFFFh
020000h-02FFFFh
030000h-03FFFFh
040000h-04FFFFh
050000h-05FFFFh
060000h-06FFFFh
070000h-07FFFFh
080000h-08FFFFh
090000h-09FFFFh
0A0000h-0AFFFFh
0B0000h-0BFFFFh
0C0000h-0CFFFFh
0D0000h-0DFFFFh
0E0000h-0EFFFFh
0F0000h-0FFFFFh
100000h-10FFFFh
110000h-11FFFFh
120000h-12FFFFh
130000h-13FFFFh
140000h-14FFFFh
150000h-15FFFFh
160000h-16FFFFh
170000h-17FFFFh
180000h-18FFFFh
190000h-19FFFFh
1A0000h-1AFFFFh
1B0000h-1BFFFFh
1C0000h-1CFFFFh
1D0000h-1DFFFFh
1E0000h-1EFFFFh
000000h–000FFFh
001000h–001FFFh
002000h–002FFFh
003000h–003FFFh
004000h–004FFFh
005000h–005FFFh
006000h–006FFFh
007000h–007FFFh
008000h–00FFFFh
010000h–017FFFh
018000h–01FFFFh
020000h–027FFFh
028000h–02FFFFh
030000h–037FFFh
038000h–03FFFFh
040000h–047FFFh
048000h–04FFFFh
050000h–057FFFh
058000h–05FFFFh
060000h–067FFFh
068000h–06FFFFh
070000h–077FFFh
078000h–07FFFFh
080000h–087FFFh
088000h–08FFFFh
090000h–097FFFh
098000h–09FFFFh
0A0000h–0A7FFFh
0A8000h–0AFFFFh
0B0000h–0B7FFFh
0B8000h–0BFFFFh
0C0000h–0C7FFFh
0C8000h–0CFFFFh
0D0000h–0D7FFFh
0D8000h–0DFFFFh
0E0000h–0E7FFFh
0E8000h–0EFFFFh
0F0000h–0F7FFFh
8/4
SA2
8/4
SA3
8/4
SA4
8/4
SA5
8/4
SA6
8/4
SA7
8/4
SA8
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
SA38
SA39
SA40
SA41
SA42
SA43
SA44
SA45
011111xxx
100000xxx
100001xxx
100010xxx
100011xxx
100100xxx
100101xxx
100110xxx
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
1F0000h-1FFFFFh
200000h-20FFFFh
210000h-21FFFFh
220000h-22FFFFh
230000h-23FFFFh
240000h-24FFFFh
250000h-25FFFFh
260000h-26FFFFh
0F8000h–0FFFFFh
100000h–107FFFh
108000h–10FFFFh
110000h–117FFFh
118000h–11FFFFh
120000h–127FFFh
128000h–12FFFFh
130000h–137FFFh
Am29DS323D
15
D A T A S H E E T
Table 5. Bottom Boot Sector Addresses (Am29DS32xDB) (Continued)
Sector Address
A20–A12
Sector Size
(Kbytes/Kwords)
(x8)
(x16)
Address Range
Sector
Address Range
SA46
SA47
SA48
SA49
SA50
SA51
SA52
SA53
SA54
SA55
SA56
SA57
SA58
SA59
SA60
SA61
SA62
SA63
SA64
SA65
SA66
SA67
SA68
SA69
SA70
100111xxx
101000xxx
101001xxx
101010xxx
101011xxx
101100xxx
101101xxx
101110xxx
101111xxx
111000xxx
110001xxx
110010xxx
110011xxx
110100xxx
110101xxx
110110xxx
110111xxx
111000xxx
111001xxx
111010xxx
111011xxx
111100xxx
111101xxx
111110xxx
111111xxx
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
270000h-27FFFFh
280000h-28FFFFh
290000h-29FFFFh
2A0000h-2AFFFFh
2B0000h-2BFFFFh
2C0000h-2CFFFFh
2D0000h-2DFFFFh
2E0000h-2EFFFFh
2F0000h-2FFFFFh
300000h-30FFFFh
310000h-31FFFFh
320000h-32FFFFh
330000h-33FFFFh
340000h-34FFFFh
350000h-35FFFFh
360000h-36FFFFh
370000h-37FFFFh
380000h-38FFFFh
390000h-39FFFFh
3A0000h-3AFFFFh
3B0000h-3BFFFFh
3C0000h-3CFFFFh
3D0000h-3DFFFFh
3E0000h-3EFFFFh
3F0000h-3FFFFFh
138000h–13FFFFh
140000h–147FFFh
148000h–14FFFFh
150000h–157FFFh
158000h–15FFFFh
160000h–167FFFh
168000h–16FFFFh
170000h–177FFFh
178000h–17FFFFh
180000h–187FFFh
188000h–18FFFFh
190000h–197FFFh
198000h–19FFFFh
1A0000h–1A7FFFh
1A8000h–1AFFFFh
1B0000h–1B7FFFh
1B8000h–1BFFFFh
1C0000h–1C7FFFh
1C8000h–1CFFFFh
1D0000h–1D7FFFh
1D8000h–1DFFFFh
1E0000h–1E7FFFh
1E8000h–1EFFFFh
1F0000h–1F7FFFh
1F8000h–1FFFFFh
Note: The address range is A20:A-1 in byte mode (BYTE#=VIL) or A20:A0 in word mode (BYTE#=VIH). The bank address bits
are A20 and A19 for Am29DS323DB.
Table 6. Secured Silicon Sector Addresses for Bottom Boot Devices
Sector Address
A20–A12
(x8)
(x16)
Address Range
Secured Silicon Sector
Entire Sector
Size
Address Range
000000xxx
000000xxx
64 Kbytes/32 Kwords
16 bytes/8 words
000000h-00FFFFh
000000h-00000Fh
00000h-07FFFh
00000h-00007h
Factory Programmed ESN
16
Am29DS323D
D A T A S H E E T
Table 7. In addition, when verifying sector protection,
Autoselect Mode
the sector address must appear on the appropriate
highest order address bits (see Tables 3–6). Table 7
shows the remaining address bits that are don’t care.
When all necessary bits have been set as required,
the programming equipment may then read the corre-
sponding identifier code on DQ7–DQ0.
The autoselect mode provides manufacturer and de-
vice identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equip-
ment to automatically match a device to be
programmed with its corresponding programming al-
gorithm. However, the autoselect codes can also be
accessed in-system through the command register.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 14. This method
does not require VID. See Autoselect Command Se-
quence for more information.
When using programming equipment, the autoselect
mode requires VID (9.0 V to 11.0 V) on address pin A9.
Address pins A6, A1, and A0 must be as shown in
Table 7. Am29DS323D Autoselect Codes (High Voltage Method)
DQ8 to DQ15
A20
to
A11
to
A8
to
A5
to
DQ7
to
BYTE# BYTE#
Description
CE# OE# WE# A12
A10 A9 A7 A6 A2 A1 A0
= VIH
= VIL
DQ0
VID
VID
Manufacturer ID: AMD
Device ID: Am29DS323D
L
L
L
L
H
H
BA
BA
X
X
X
X
L
L
X
X
L
L
L
X
X
01h
H
22h
X
B7h (T), B8h (B)
Sector Protection
Verification
01h (protected),
00h (unprotected)
VID
VID
L
L
L
L
H
H
SA
BA
X
X
X
X
L
L
X
X
H
H
L
X
X
X
X
85h (factory locked),
05h (not factory
locked)
Secured Silicon Sector
Indicator Bit (DQ7)
H
Legend: T = Top Boot Block, B = Bottom Boot Block, L = Logic Low = VIL, H = Logic High = VIH, BA = Bank Address, SA =
Sector Address, X = Don’t care.
Am29DS323D
17
D A T A S H E E T
Table 9. Bottom Boot Sector/Sector Block
Sector/Sector Block Protection and
Unprotection
Addresses for Protection/Unprotection
Sector/Sector Block
(Note: For the following discussion, the term sector
applies to both sectors and sector blocks. A sector
block consists of two or more adjacent sectors that are
protected or unprotected at the same time (see
Table 8 and Table 9).
Sector
A20–A12
Size
SA70
111111XXX
64 Kbytes
111110XXX,
111101XXX,
111100XXX
SA69-SA67
192 (3x64) Kbytes
Table 8. Top Boot Sector/Sector Block Addresses
for Protection/Unprotection
SA66-SA63
SA62-SA59
SA58-SA55
SA54-SA51
SA50-SA47
SA46-SA43
SA42-SA39
SA38-SA35
SA34-SA31
SA30-SA27
SA26-SA23
SA22–SA19
SA18-SA15
SA14-SA11
1110XXXXX
1101XXXXX
1100XXXXX
1011XXXXX
1010XXXXX
1001XXXXX
1000XXXXX
0111XXXXX
0110XXXXX
0101XXXXX
0100XXXXX
0011XXXXX
0010XXXXX
0001XXXXX
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
Sector/
Sector
A20–A12
Sector Block Size
SA0
000000XXX
64 Kbytes
000001XXX,
000010XXX
000010XXX
SA1-SA3
192 (3x64) Kbytes
SA4-SA7
0001XXXXX
0010XXXXX
0011XXXXX
0100XXXXX
0101XXXXX
0110XXXXX
0111XXXXX
1000XXXXX
1001XXXXX
1010XXXXX
1011XXXXX
1100XXXXX
1101XXXXX
1110XXXXX
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
SA8-SA11
SA12-SA15
SA16-SA19
SA20-SA23
SA24-SA27
SA28-SA31
SA32-SA35
SA36-SA39
SA40-SA43
SA44-SA47
SA48-SA51
SA52-SA55
SA56-SA59
000011XXX,
000010XXX,
000001XXX
SA10-SA8
192 (3x64) Kbytes
SA7
SA6
SA5
SA4
SA3
SA2
SA1
SA0
000000111
000000110
000000101
000000100
000000011
000000010
000000001
000000000
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
111100XXX,
111101XXX,
111110XXX
SA60-SA62
192 (3x64) Kbytes
SA63
SA64
SA65
SA66
SA67
SA68
SA69
SA70
111111000
111111001
111111010
111111011
111111100
111111101
111111110
111111111
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
The hardware sector protection feature disables both
program and erase operations in any sector. The hard-
ware sector unprotection feature re-enables both
program and erase operations in previously protected
sectors. Sector protection and unprotection can be im-
plemented via two methods.
The primary method requires VID on the RESET# pin
only, and can be implemented either in-system or via
programming equipment. Figure 2 shows the algo-
rithms and Figure 25 shows the timing diagram. This
method uses standard microprocessor bus cycle tim-
ing. For sector unprotect, all unprotected sectors must
first be protected prior to the first sector unprotect write
cycle.
18
Am29DS323D
D A T A S H E E T
The alternate method intended only for programming
block consists of two or more adjacent sectors that are
protected or unprotected at the same time (see
Table 8 and Table 9).
equipment requires VID on address pin A9 and OE#.
This method is compatible with programmer routines
written for earlier 1.8 volt-only AMD flash devices.
Contact an AMD representative for further details.
This feature allows temporary unprotection of previ-
ously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RE-
SET# pin to VID (9.0 V – 11.0 V). During this mode,
formerly protected sectors can be programmed or
erased by selecting the sector addresses. Once VID is
removed from the RESET# pin, all the previously pro-
tected sectors are protected again. Figure 1 shows the
algorithm, and Figure 24 shows the timing diagrams,
for this feature.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is pro-
tected or unprotected. See Autoselect Mode for
details.
Write Protect (WP#)
The Write Protect function provides a hardware
method of protecting certain boot sectors without
using VID. This function is one of two provided by the
WP#/ACC pin.
START
If the system asserts VIL on the WP#/ACC pin, the de-
vice disables program and erase functions in the two
outermost 8 Kbyte boot sectors independently of
whether those sectors were protected or unprotected
using the method described in Sector/Sector Block
Protection and Unprotection. The two outermost 8
Kbyte boot sectors are the two sectors containing the
lowest addresses in a bottom-boot-configured device,
or the two sectors containing the highest addresses in
a top-boot-configured device.
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
If the system asserts VIH on the WP#/ACC pin, the de-
vice reverts to whether the two outermost 8 Kbyte boot
sectors were last set to be protected or unprotected.
That is, sector protection or unprotection for these two
sectors depends on whether they were last protected
or unprotected using the method described in Sec-
tor/Sector Block Protection and Unprotection.
Temporary Sector
Unprotect Completed
(Note 2)
Notes:
1. All protected sectors unprotected (If WP#/ACC = VIL,
outermost boot sectors remain protected).
Note that the WP#/ACC pin must not be left floating or
unconnected; inconsistent behavior of the device may
result.
2. All previously protected sectors are protected once
again.
Temporary Sector/Sector Block Unprotect
(Note: For the following discussion, the term sector
applies to both sectors and sector blocks. A sector
Figure 1. Temporary Sector Unprotect Operation
Am29DS323D
19
D A T A S H E E T
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
PLSCNT = 1
PLSCNT = 1
RESET# = VID
RESET# = VID
unprotected sectors
prior to issuing the
first sector
Wait 1 μs
Wait 1 μs
unprotect address
No
First Write
Cycle = 60h?
No
First Write
Cycle = 60h?
Temporary Sector
Unprotect Mode
Temporary Sector
Unprotect Mode
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Wait 150 µs
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
Reset
PLSCNT = 1
Increment
PLSCNT
Wait 15 ms
A1 = 1, A0 = 0
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Read from
sector address
with A6 = 1,
Data = 01h?
Yes
A1 = 1, A0 = 0
No
Yes
Set up
next sector
address
Yes
No
PLSCNT
= 1000?
Protect another
sector?
Data = 00h?
Yes
Device failed
No
Yes
Remove VID
from RESET#
No
Last sector
verified?
Device failed
Write reset
command
Yes
Remove VID
Sector Unprotect
Algorithm
from RESET#
Sector Protect
Algorithm
Sector Protect
complete
Write reset
command
Sector Unprotect
complete
Note: The term sector in the figure applies to both sectors and sector blocks.
Figure 2. In-System Sector/Sector Block Protect and Unprotect Algorithms
20
Am29DS323D
D A T A S H E E T
at addresses 1F83C0h–1F83C7h in word mode (or
Secured Silicon Sector Flash
Memory Region
addresses 3F0780h–3F078Fh in byte mode).
Customers may opt to have their code programmed by
AMD through the AMD ExpressFlash service. AMD
programs the customer’s code, with or without the ran-
dom ESN. The devices are then shipped from AMD’s
factory with the permanently locked. Contact an AMD
representative for details on using AMD’s Express-
Flash service.
The Secured Silicon Sector feature provides a Flash
memory region that enables permanent part identifica-
tion through an Electronic Serial Number (ESN). The
Secured Silicon Sector is 64 Kbytes in length, and
uses a Secured Silicon Sector Indicator Bit to indicate
whether or not the Secured Silicon Sector is locked
when shipped from the factory. This bit is permanently
set at the factory and cannot be changed, which pre-
vents cloning of a factory locked part. This ensures the
security of the ESN once the product is shipped to the
field.
Customer Lockable: Secured Silicon Sector NOT
Programmed or Protected at the Factory
If the security feature is not required, the Secured Sili-
con Sector can be treated as an additional Flash
memory space, expanding the size of the available
Flash array by 64 Kbytes. The Secured Silicon Sector
can be read, programmed, and erased as often as re-
quired. The Secured Silicon Sector area can be
protected using one of the following procedures:
AMD offers the device with the Secured Silicon Sector
either factory locked or customer lockable. The fac-
tory-locked version is always protected when shipped
from the factory, and has the Secured Silicon Sector
Indicator Bit permanently set to a 1. The cus-
tomer-lockable version is shipped with the
unprotected, allowing customers to utilize the that sec-
tor in any manner they choose. The customer-lockable
version has the Secured Silicon Sector Indicator Bit
permanently set to a 0. Thus, the Secured Silicon Sec-
tor Indicator Bit prevents customer-lockable devices
from being used to replace devices that are factory
locked.
■ Write the three-cycle Enter Secured Silicon Sector
Region command sequence, and then follow the
in-system sector protect algorithm as shown in
Figure 2, except that RESET# may be at either VIH
or VID. This allows in-system protection of the with-
out raising any device pin to a high voltage. Note
that this method is only applicable to the Secured
Silicon Sector.
The system accesses the Secured Silicon Sector
through a command sequence (see Enter / Exit Se-
cured Silicon Sector Command Sequence). After the
system has written the Enter Secured Silicon Sector
command sequence, it may read the Secured Silicon
Sector by using the addresses normally occupied by
the boot sectors. This mode of operation continues
until the system issues the Exit Secured Silicon Sector
command sequence, or until power is removed from
the device. On power-up, or following a hardware re-
set, the device reverts to sending commands to the
boot sectors instead of the Secured Silicon sector.
■ Write the three-cycle Enter Secured Silicon Sector
Region command sequence, and then use the alter-
nate method of sector protection described in the
Sector/Sector Block Protection and Unprotection.
Once the Secured Silicon Sector is locked and veri-
fied, the system must write the Exit Secured Silicon
Sector Region command sequence to return to read-
ing and writing the remainder of the array.
The Secured Silicon Sector protection must be used
with caution since, once protected, there is no proce-
dure available for unprotecting the Secured Silicon
Sector area and none of the bits in the Secured Silicon
Sector memory space can be modified in any way.
Factory Locked: Secured Silicon Sector
Programmed and Protected at the Factory
In a factory locked device, the Secured Silicon Sector
is protected when the device is shipped from the fac-
tory. The Secured Silicon Sector cannot be modified in
any way. The device is available preprogrammed with
one of the following:
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 14 for com-
mand definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during VCC power-up
and power-down transitions, or from system noise.
■ A random, secure ESN only
■ Customer code through the ExpressFlash service
■ Both a random, secure ESN and customer code
through the ExpressFlash service.
In devices that have an ESN, a Bottom Boot device
has the 16-byte ESN at addresses 000000h–000007h
in word mode (or 000000h–00000Fh in byte mode). In
the Top Boot device the starting address of the ESN is
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not ac-
cept any write cycles. This protects data during VCC
power-up and power-down. The command register
Am29DS323D
21
D A T A S H E E T
and all internal program/erase circuits are disabled,
and the device resets to reading array data. Subse-
quent writes are ignored until VCC is greater than VLKO
The system must provide the proper signals to the
control pins to prevent unintentional writes when VCC
The Common Flash Interface (CFI) specification out-
lines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-inde-
pendent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
.
is greater than VLKO
.
Write Pulse Glitch Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
This device enters the CFI Query mode when the sys-
tem writes the CFI Query command, 98h, to address
55h in word mode (or address AAh in byte mode), any
time the device is ready to read array data. The sys-
tem can read CFI information at the addresses given
in Tables 10–13. To terminate reading CFI data, the
system must write the reset command.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 10–13. The
system must write the reset command to return the de-
vice to the autoselect mode.
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automati-
cally reset to reading array data on power-up.
COMMON FLASH MEMORY INTERFACE
(CFI)
For further information, please refer to the CFI Specifi-
cation and CFI Publication 100, or contact an AMD
representative for copies of these documents.
Table 10. CFI Query Identification String
Addresses
Addresses
(Word Mode)
(Byte Mode)
Data
Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string QRY
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
22
Am29DS323D
D A T A S H E E T
Table 11. System Interface String
Addresses
Addresses
(Word Mode)
(Byte Mode)
Data
Description
VCC Min. (write/erase)
0018h
1Bh
1Ch
36h
38h
D7–D4: volt, D3–D0: 100 millivolt
VCC Max. (write/erase)
0022h
D7–D4: volt, D3–D0: 100 millivolt
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
3Ah
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
0000h
0000h
0004h
0000h
000Ah
0000h
0005h
0000h
0004h
0000h
VPP Min. voltage (00h = no VPP pin present)
VPP Max. voltage (00h = no VPP pin present)
Typical timeout per single byte/word write 2N µs
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
Typical timeout per individual block erase 2N ms
Typical timeout for full chip erase 2N ms (00h = not supported)
Max. timeout for byte/word write 2N times typical
Max. timeout for buffer write 2N times typical
Max. timeout per individual block erase 2N times typical
Max. timeout for full chip erase 2N times typical (00h = not supported)
Table 12. Device Geometry Definition
Addresses
Addresses
(Word Mode)
(Byte Mode)
Data
Description
27h
4Eh
0016h
Device Size = 2N byte
28h
29h
50h
52h
0000h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of bytes in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
003Eh
0000h
0000h
0001h
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Am29DS323D
23
D A T A S H E E T
Table 13. Primary Vendor-Specific Extended Query
Addresses
Addresses
(Word Mode)
(Byte Mode)
Data
Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string PRI
43h
44h
86h
88h
0031h
0032h
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
45h
8Ah
0000h
Silicon Revision Number (Bits 7-2)
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
46h
47h
48h
49h
4Ah
4Bh
4Ch
8Ch
8Eh
90h
92h
94h
96h
98h
0002h
0001h
0001h
0004h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
Sector Protect/Unprotect scheme
04 = 29LV800 mode
00XXh
(See Note)
Simultaneous Operation
00 = Not Supported, X = Number of Sectors in Bank 2 (Uniform Bank)
Burst Mode Type
00 = Not Supported, 01 = Supported
0000h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
ACC (Acceleration) Supply Minimum
4Dh
4Eh
4Fh
9Ah
9Ch
9Eh
0085h
0095h
000Xh
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
02h = Bottom Boot Device, 03h = Top Boot Device
Note:
The number of sectors in Bank 2 is device dependent.
Am29DS322 = 38h
Am29DS323 = 30h
24
Am29DS323D
D A T A S H E E T
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device
operations. Table 14 defines the valid register com-
mand sequences. Writing incorrect address and
data values or writing them in the improper se-
quence resets the device to reading array data.
that is in the Erase Suspend mode, writing the reset
command returns that bank to the erase-sus-
pend-read mode. Once programming begins,
however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to reading array data. If a
bank entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns
that bank to the erase-suspend-read mode.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. See AC Characteristics for timing diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. Each bank is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the banks to read-
ing array data (or erase-suspend-read mode if that
bank was in Erase Suspend).
Autoselect Command Sequence
After the device accepts an Erase Suspend command,
the corresponding bank enters the erase-sus-
pend-read mode, after which the system can read
data from any non-erase-suspended sector within the
same bank. After completing a programming operation
in the Erase Suspend mode, the system may once
again read array data with the same exception. See
Erase Suspend/Erase Resume Commands for more
information.
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
Table 14 shows the address and data requirements.
This method is an alternative to that shown in Table 7,
which is intended for PROM programmers and re-
quires VID on address pin A9. The autoselect
command sequence may be written to an address
within a bank that is either in the read or
erase-suspend-read mode. The autoselect command
may not be written while the device is actively pro-
gramming or erasing in the other bank.
The system must issue the reset command to return a
bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase opera-
tion, or if the bank is in the autoselect mode. See
Reset Command, for more information.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the
autoselect command. The bank then enters the
autoselect mode. The system may read at any address
within the same bank any number of times without ini-
tiating another autoselect command sequence. The fol-
lowing table describes the hex address requirements
for the various autoselect functions, and the resulting
data. BA represents the bank address, and SA repre-
sents the sector address.
See also Requirements for Reading Array Data in De-
vice Bus Operations for more information. The
Memory Array Read-Only Operations table provides
the read parameters, and Figure 13 shows the timing
diagram.
Reset Command
Writing the reset command resets the banks to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
Word
Address
Byte
Address
Description
Read Data*
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the bank to which the sys-
tem was writing to reading array data. Once erasure
begins, however, the device ignores reset commands
until the operation is complete.
Manufacturer ID (BA) + 00 (BA) + 00
01
22B7 (top boot)
22B8 (bottom boot)
Device ID
(BA) + 01 (BA) + 02
(SA) + 02 (SA) + 04
Sector Block
Protect Verify
00 (unlocked),
01 (locked)
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the bank to
which the system was writing to reading array data. If
the program command sequence is written to a bank
Secured Silicon
Sector Factory
Protect
85 (factory locked)
05 (not factory locked)
(BA) + 03 (BA) + 06
* For byte mode, ignore data output bits D8–DQ1ꢀ.
Am29DS323D
25
D A T A S H E E T
The system must write the reset command to return to
that bank to set DQ5 = 1, or cause the DQ7 and DQ6
status bits to indicate the operation was successful.
However, a succeeding read shows that the data is
still 0. Only erase operations can convert a 0 to a 1.
reading array data (or erase-suspend-read mode if the
bank was previously in Erase Suspend).
Enter / Exit Secured Silicon Sector
Command Sequence
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to pro-
gram bytes or words to a bank faster than using the
standard program command sequence. The unlock
bypass command sequence is initiated by first writing
two unlock cycles. This is followed by a third write
cycle containing the unlock bypass command, 20h.
That bank then enters the unlock bypass mode. A
two-cycle unlock bypass program command sequence
is all that is required to program in this mode. The first
cycle in this sequence contains the unlock bypass pro-
gram command, A0h; the second cycle contains the
program address and data. Additional data is pro-
grammed in the same manner. This mode dispenses
with the initial two unlock cycles required in the stan-
dard program command sequence, resulting in faster
total programming time. Table 14 shows the require-
ments for the command sequence.
The system can access the Secured Silicon Sector re-
gion by issuing the three-cycle Enter Secured Silicon
Sector command sequence. The device continues to
access the Secured Silicon Sector region until the sys-
tem issues the four-cycle Exit Secured Silicon Sector
command sequence. The Exit Secured Silicon Sector
command sequence returns the device to normal op-
eration. Table 14 shows the address and data
requirements for both command sequences. See also
Secured Silicon Sector Flash Memory Region for fur-
ther information. Note that a hardware reset
(RESET#=VIL) resets the device to reading array data.
Byte/Word Program Command Sequence
The system may program the device by word or byte,
depending on the state of the BYTE# pin. Program-
ming is a four-bus-cycle operation. The program
command sequence is initiated by writing two unlock
write cycles, followed by the program set-up com-
mand. The program address and data are written next,
which in turn initiate the Embedded Program algo-
rithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verifies the
programmed cell margin. Table 14 shows the address
and data requirements for the byte program command
sequence.
During the unlock bypass mode, only the Unlock By-
pass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset com-
mand sequence. The first cycle must contain the bank
address and the data 90h. The second cycle need
only contain the data 00h. The bank then returns to
the reading array data.
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
VHH on the WP#/ACC pin, the device automatically en-
ters the Unlock Bypass mode. The system may then
write the two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation. Note that
the WP#/ACC pin must not be at VHH any operation
other than accelerated programming, or device dam-
age may result. In addition, the WP#/ACC pin must not
be left floating or unconnected; inconsistent behavior
of the device may result.
When the Embedded Program algorithm is complete,
that bank then returns to reading array data and ad-
dresses are no longer latched. The system can
determine the status of the program operation by
using DQ7, DQ6, or RY/BY#. See Write Operation
Status for information on these status bits.
Any commands written to the device during the Em-
bedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. The program command sequence should
be reinitiated once that bank has returned to reading
array data, to ensure data integrity.
Figure 3 illustrates the algorithm for the program oper-
ation. Refer to the Erase and Program Operations
table in the AC Characteristics section for parameters,
and Figure 17 for timing diagrams.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from 0 back to a 1. Attempting to do so may cause
26
Am29DS323D
D A T A S H E E T
Any commands written during the chip erase operation
are ignored. However, note that a hardware reset im-
mediately terminates the erase operation. If that
occurs, the chip erase command sequence should be
reinitiated once that bank has returned to reading
array data, to ensure data integrity.
START
Figure 4 illustrates the algorithm for the erase opera-
tion. See Erase and Program Operations tables in the
AC Characteristics section for parameters, and
Figure 19 for timing diagrams.
Write Program
Command Sequence
Data Poll
from System
Sector Erase Command Sequence
Embedded
Program
algorithm
in progress
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two ad-
ditional unlock cycles are written, and are then
followed by the address of the sector to be erased,
and the sector erase command. Table 14 shows the
address and data requirements for the sector erase
command sequence.
Verify Data?
Yes
No
No
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm auto-
matically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or tim-
ings during these operations.
Increment Address
Last Address?
Yes
Programming
Completed
After the command sequence is written, a sector erase
time-out of 50 µs occurs. During the time-out period,
additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sec-
tors may be from one sector to all sectors. The time
between these additional cycles must be less than
50 µs, otherwise erasure may begin. Any sector erase
address and command following the exceeded
time-out may or may not be accepted. It is recom-
mended that processor interrupts be disabled during
this time to ensure all commands are accepted. The
interrupts can be re-enabled after the last Sector
Erase command is written. Any command other than
Sector Erase or Erase Suspend during the
time-out period resets that bank to reading array
data. The system must rewrite the command se-
quence and any additional addresses and commands.
Note: See Table 14 for program command sequence.
Figure 3. Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algo-
rithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
trols or timings during these operations. Table 14
shows the address and data requirements for the chip
erase command sequence.
The system can monitor DQ3 to determine if the sec-
tor erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the ris-
ing edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete,
that bank returns to reading array data and addresses
are no longer latched. The system can determine the
status of the erase operation by using DQ7, DQ6,
DQ2, or RY/BY#. See Write Operation Status for infor-
mation on these status bits.
When the Embedded Erase algorithm is complete, the
bank returns to reading array data and addresses are
no longer latched. Note that while the Embedded
Erase operation is in progress, the system can read
data from the non-erasing bank. The system can de-
termine the status of the erase operation by reading
Am29DS323D
27
D A T A S H E E T
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. See
Write Operation Status for information on these status
bits.
program operation using the DQ7 or DQ6 status bits,
just as in the standard Byte Program operation. See
Write Operation Status for more information.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other com-
mands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once that bank has returned to
reading array data, to ensure data integrity.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. See Au-
toselect Mode and Autoselect Command Sequence
for details.
To resume the sector erase operation, the system
must write the Erase Resume command. The bank
address of the erase-suspended bank is required
when writing this command. Further writes of the Re-
sume command are ignored. Another Erase Suspend
command can be written after the chip has resumed
erasing.
Figure 4 illustrates the algorithm for the erase opera-
tion. See Erase and Program Operations tables in the
AC Characteristics section for parameters, and
Figure 19 for timing diagrams.
Erase Suspend/Erase Resume
Commands
START
The Erase Suspend command, B0h, allows the sys-
tem to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. The bank address is required when writing
this command. This command is valid only during the
sector erase operation, including the 50 µs time-out
period during the sector erase command sequence.
The Erase Suspend command is ignored if written dur-
ing the chip erase operation or Embedded Program
algorithm.
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Embedded
Erase
algorithm
in progress
When the Erase Suspend command is written during
the sector erase operation, the device requires a max-
imum of 35 µs to suspend the erase operation.
However, when the Erase Suspend command is writ-
ten during the sector erase time-out, the device
immediately terminates the time-out period and sus-
pends the erase operation.
No
Data = FFh?
Yes
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The sys-
tem can read data from or program data to any sector
not selected for erasure. (The device erase suspends
all sectors selected for erasure.) Reading at any ad-
dress within erase-suspended sectors produces status
information on DQ7–DQ0. The system can use DQ7,
or DQ6 and DQ2 together, to determine if a sector is
actively erasing or is erase-suspended. See Write Op-
eration Status for information on these status bits.
Erasure Completed
Notes:
1. See Table 14 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
After an erase-suspended program operation is com-
plete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
Figure 4. Erase Operation
28
Am29DS323D
D A T A S H E E T
Command Definitions
Table 14. Am29DS323D Command Definitions
Bus Cycles (Notes 2–5)
Command
Sequence
(Note 1)
First
Second
Third
Addr
Fourth
Fifth
Sixth
Addr Data Addr Data
Data
Addr
Data
Addr Data Addr Data
Read (Note 6)
Reset (Note 7)
1
1
RA
XXX
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
XXX
BA
RD
F0
Word
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
PA
(BA)555
(BA)AAA
(BA)555
(BA)AAA
(BA)555
(BA)AAA
(BA)555
(BA)AAA
555
Manufacturer ID
Device ID
4
4
4
4
3
4
4
3
AA
AA
AA
AA
AA
AA
AA
AA
55
55
55
55
55
55
55
55
90
90
90
90
88
90
A0
20
(BA)X00
01
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
(BA)X01
(BA)X02
(BA)X03
(BA)X06
(SA)X02
(SA)X04
(see
Table 7)
Secured Silicon Sector
Factory Protect (Note 9)
85/05
00/01
Sector Protect Verify
(Note 10)
Enter Secured Silicon Sector
Region
AAA
555
Exit Secured Silicon Sector
Region
XXX
PA
00
AAA
555
Program
PD
AAA
555
Unlock Bypass
AAA
Unlock Bypass Program (Note 11)
Unlock Bypass Reset (Note 12)
2
2
A0
90
PD
00
XXX
2AA
555
2AA
555
Word
555
AAA
555
AAA
BA
555
AAA
555
555
AAA
555
2AA
555
2AA
555
555
Chip Erase
6
6
AA
AA
55
55
80
80
AA
AA
55
55
10
30
Byte
Word
Byte
AAA
Sector Erase
SA
AAA
AAA
Erase Suspend (Note 13)
Erase Resume (Note 14)
1
1
B0
30
BA
Word
Byte
55
CFI Query (Note 15)
1
98
AA
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE# pulse, whichever happens
later.
PD = Data to be programmed at location PA. Data latches on the rising
edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A20–A12 uniquely select any sector.
BA = Address of the bank that is being switched to autoselect mode, is
in bypass mode, or is being erased.
Notes:
1. See Table 1 for description of bus operations.
protect information. Data bits DQ1ꢀ–DQ8 are don’t care. See
Autoselect Command Sequence for more information.
2. All values are in hexadecimal.
9. The data is 8ꢀh for factory locked and 0ꢀh for not factory locked.
3. Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
10. The data is 00h for an unprotected sector/sector block and 01h
for a protected sector/sector block.
4. Data bits DQ1ꢀ–DQ8 are don’t care in command sequences,
except for RD and PD.
11. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
ꢀ. Unless otherwise noted, address bits A20–A11 are don’t cares.
12. The Unlock Bypass Reset command is required to return to
reading array data when the bank is in the unlock bypass mode.
6. No unlock or command cycles required when bank is in read
mode.
13. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation, and requires the bank address.
7. The Reset command is required to return to reading array data
(or to the erase-suspend-read mode if previously in Erase
Suspend) when a bank is in the autoselect mode, or if DQꢀ goes
high (while the bank is providing status information).
14. The Erase Resume command is valid only during the Erase
Suspend mode, and requires the bank address.
8. The fourth cycle of the autoselect command sequence is a read
cycle. The system must provide the bank address to obtain the
manufacturer ID, device ID, or Secured Silicon Sector factory
1ꢀ. Command is valid when device is ready to read array data or when
Am29DS323D
29
D A T A S H E E T
WRITE OPERATION STATUS
The device provides several bits to determine the sta-
tus of a program or erase operation: DQ2, DQ3, DQ5,
DQ6, and DQ7. Table 15 and the following subsec-
tions describe the function of these bits. DQ7 and DQ6
each offer a method for determining whether a pro-
gram or erase operation is complete or in progress.
The device also provides a hardware-based output
signal, RY/BY#, to determine whether an Embedded
Program or Erase operation is in progress or has been
completed.
pleted the program or erase operation and DQ7 has
valid data, the data outputs on DQ0–DQ6 may be still
invalid. Valid data on DQ0–DQ7 appears on succes-
sive read cycles.
Table 15 shows the outputs for Data# Polling on DQ7.
Figure 5 shows the Data# Polling algorithm. Figure 21
in AC Characteristics shows the Data# Polling timing
diagram.
DQ7: Data# Polling
START
The Data# Polling bit, DQ7, indicates to the host sys-
tem whether an Embedded Program or Erase
algorithm is in progress or completed, or whether a
bank is in Erase Suspend. Data# Polling is valid after
the rising edge of the final WE# pulse in the command
sequence.
Read DQ7–DQ0
Addr = VA
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum pro-
grammed to DQ7. This DQ7 status also applies to
programming during Erase Suspend. When the Em-
bedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for
approximately 1 µs, then that bank returns to reading
array data.
Yes
DQ7 = Data?
No
No
DQ5 = 1?
Yes
During the Embedded Erase algorithm, Data# Polling
produces a 0 on DQ7. When the Embedded Erase al-
gorithm is complete, or if the bank enters the Erase
Suspend mode, Data# Polling produces a 1 on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status infor-
mation on DQ7.
Read DQ7–DQ0
Addr = VA
Yes
DQ7 = Data?
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data# Poll-
ing on DQ7 is active for approximately 100 µs, then
the bank returns to reading array data. If not all se-
lected sectors are protected, the Embedded Erase
algorithm erases the unprotected sectors, and ignores
the selected sectors that are protected. However, if the
system reads DQ7 at an address within a protected
sector, the status may not be valid.
No
PASS
FAIL
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
Just prior to the completion of an Embedded Program
or Erase operation, DQ7 may change asynchronously
with DQ0–DQ6 while Output Enable (OE#) is asserted
low. That is, the device may change from providing
status information to valid data on DQ7. Depending on
when the system samples the DQ7 output, it may read
the status or valid data. Even if the device has com-
2. DQ7 should be rechecked even if DQꢀ = 1 because
DQ7 may change simultaneously with DQꢀ.
Figure 5. Data# Polling Algorithm
30
Am29DS323D
D A T A S H E E T
DQ6 also toggles during the erase-suspend-program
RY/BY#: Ready/Busy#
mode, and stops toggling once the Embedded Pro-
gram algorithm is complete.
The RY/BY# is a dedicated, open-drain output pin
which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, sev-
eral RY/BY# pins can be tied together in parallel with a
Table 15 shows the outputs for Toggle Bit I on DQ6.
Figure 6 shows the toggle bit algorithm. Figure 22 in
AC Characteristics shows the toggle bit timing dia-
grams. Figure 23 shows the differences between DQ2
and DQ6 in graphical form. See also the subsection on
DQ2: Toggle Bit II.
pull-up resistor to VCC
.
If the output is low (Busy), the device is actively eras-
ing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is reading array data, the standby
mode, or one of the banks is in the erase-sus-
pend-read mode.
START
Table 15 shows the outputs for RY/BY#.
Read DQ7–DQ0
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or com-
plete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any ad-
dress, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
Read DQ7–DQ0
No
Toggle Bit
= Toggle?
During an Embedded Program or Erase algorithm op-
eration, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or
CE# to control the read cycles. When the operation is
complete, DQ6 stops toggling.
Yes
No
DQ5 = 1?
Yes
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 tog-
gles for approximately 100 µs, then returns to reading
array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are
protected.
Read DQ7–DQ0
Twice
The system can use DQ6 and DQ2 together to deter-
mine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing
(that is, the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase Sus-
pend mode, DQ6 stops toggling. However, the system
must also use DQ2 to determine which sectors are
erasing or erase-suspended. Alternatively, the system
can use DQ7 (see the subsection on DQ7: Data#
Polling).
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note: The system should recheck the toggle bit even if DQꢀ
= 1 because the toggle bit may stop toggling as DQꢀ
changes to 1. See the subsections on DQ6 and DQ2 for
more information.
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 μs after the program
command sequence is written, then returns to reading
array data.
Figure 6. Toggle Bit Algorithm
Am29DS323D
31
D A T A S H E E T
cles, determining the status as described in the
DQ2: Toggle Bit II
previous paragraph. Alternatively, it may choose to
perform other system tasks. In this case, the system
must start at the beginning of the algorithm when it re-
turns to determine the status of the operation (top of
Figure 6).
The Toggle Bit II on DQ2, when used with DQ6, indi-
cates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
DQ5: Exceeded Timing Limits
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for era-
sure. (The system may use either OE# or CE# to
control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-sus-
pended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for era-
sure. Thus, both status bits are required for sector and
mode information. Refer to Table 15 to compare out-
puts for DQ2 and DQ6.
DQ5 indicates whether the program or erase time
has exceeded a specified internal pulse count limit.
Under these conditions DQ5 produces a 1, indicating
that the program or erase cycle was not successfully
completed.
The device may output a 1 on DQ5 if the system tries
to program a 1 to a location that was previously pro-
grammed to 0. Only an erase operation can change
a 0 back to a 1. Under this condition, the device halts
the operation, and when the timing limit has been ex-
ceeded, DQ5 produces a 1.
Figure 6 shows the toggle bit algorithm in flowchart
form, and DQ2: Toggle Bit II explains the algorithm.
See also the DQ6: Toggle Bit I. Figure 22 shows the
toggle bit timing diagram. Figure 23 shows the differ-
ences between DQ2 and DQ6 in graphical form.
Under both these conditions, the system must write
the reset command to return to reading array data (or
to the erase-suspend-read mode if a bank was previ-
ously in the erase-suspend-program mode).
DQ3: Sector Erase Timer
Reading Toggle Bits DQ6/DQ2
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not
apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out
also applies after each additional sector erase com-
mand. When the time-out period is complete, DQ3
switches from a 0 to a 1. If the time between additional
sector erase commands from the system can be as-
sumed to be less than 50 µs, the system need not
monitor DQ3. See also Sector Erase Command
Sequence.
Refer to Figure 6 for the following discussion. When-
ever the system initially begins reading toggle bit
status, it must read DQ7–DQ0 at least twice in a row
to determine whether a toggle bit is toggling. Typically,
the system would note and store the value of the tog-
gle bit after the first read. After the second read, the
system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device
has completed the program or erase operation. The
system can read array data on DQ7–DQ0 on the fol-
lowing read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the sys-
tem also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is tog-
gling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the de-
vice did not completed the operation successfully, and
the system must write the reset command to return to
reading array data.
After the sector erase command is written, the system
should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted
the command sequence, and then read DQ3. If DQ3 is
1, the Embedded Erase algorithm has begun; all fur-
ther commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is 0, the
device accepts additional sector erase commands. To
ensure the command has been accepted, the system
software should check the status of DQ3 prior to and
following each subsequent sector erase command. If
DQ3 is high on the second status check, the last com-
mand might not have been accepted.
The remaining scenario is that the system initially de-
termines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor
the toggle bit and DQ5 through successive read cy-
Table 15 shows the status of DQ3 relative to the other
status bits.
32
Am29DS323D
D A T A S H E E T
Table 15. Write Operation Status
DQ7
DQ5
DQ2
Status
(Note 2)
DQ6
(Note 1)
DQ3
N/A
1
(Note 2)
RY/BY#
Embedded Program Algorithm
Embedded Erase Algorithm
Erase
Erase-Suspend-
Read
DQ7#
0
Toggle
Toggle
0
0
No toggle
Toggle
0
0
Standard
Mode
1
No toggle
0
N/A
Toggle
1
Suspended Sector
Erase
Suspend
Mode
Non-Erase
Suspended Sector
Data
Data
Data
0
Data
N/A
Data
N/A
1
0
Erase-Suspend-Program
DQ7#
Toggle
Notes:
1. DQꢀ switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
Refer to the section on DQꢀ for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm
is in progress. The device outputs array data if the system addresses a non-busy bank.
Am29DS323D
33
D A T A S H E E T
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
20 ns
20 ns
Ambient Temperature
with Power Applied . . . . . . . . . . . . . –65°C to +125°C
+0.8 V
Voltage with Respect to Ground
–0.5 V
–2.0 V
VCC (Note 1) . . . . . . . . . . . . . . . . .–0.5 V to +2.5 V
A9, OE#, and RESET#
(Note 2). . . . . . . . . . . . . . . . . . . . . –0.5 V to +11 V
20 ns
WP#/ACC . . . . . . . . . . . . . . . . . .–0.5 V to +10.5 V
All other pins (Note 1). . . . . . –0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 100 mA
Figure 7. Maximum Negative
Overshoot Waveform
Notes:
1. Minimum DC voltage on input or I/O pins is –0.ꢀ V.
During voltage transitions, input or I/O pins may
overshoot VSS to –2.0 V for periods of up to 20 ns.
Maximum DC voltage on input or I/O pins is VCC +0.ꢀ V.
See Figure 7. During voltage transitions, input or I/O pins
may overshoot to VCC +2.0 V for periods up to 20 ns. See
Figure 8.
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
2. Minimum DC input voltage on pins A9, OE#, RESET#,
and WP#/ACC is –0.ꢀ V. During voltage transitions, A9,
OE#, WP#/ACC, and RESET# may overshoot VSS to
–2.0 V for periods of up to 20 ns. See Figure 7.
Maximum DC input voltage on pin A9 is +12.ꢀ V which
may overshoot to +14.0 V for periods up to 20 ns.
Maximum DC input voltage on WP#/ACC is +9.ꢀ V which
may overshoot to +12.0 V for periods up to 20 ns.
20 ns
20 ns
Figure 8. Maximum Positive
Overshoot Waveform
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under Absolute Maximum
Ratings may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
V
CC Supply Voltages
V
CC for standard voltage range . . . . . . .1.8 V to 2.2 V
Operating ranges define those limits between which the func-
tionality of the device is guaranteed.
34
Am29DS323D
D A T A S H E E T
DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
1.0
35
Unit
µA
V
V
IN = VSS to VCC
CC = VCC max
,
ILI
Input Load Current
ILIT
A9 Input Load Current
Output Leakage Current
VCC = VCC max; A9 = 11 V
VOUT = VSS to VCC
CC = VCC max
µA
,
ILO
1.0
µA
V
5 MHz
1 MHz
5 MHz
1 MHz
5
1
16
4
CE# = VIL, OE# = VIH,
Byte Mode
VCC Active Read Current
(Notes 1, 2)
ICC1
mA
5
16
4
CE# = VIL, OE# = VIH,
Word Mode
1
ICC2
ICC3
ICC4
VCC Active Write Current (Notes 2, 3) CE# = VIL, OE# = VIH, WE# = VIL
10
0.2
0.2
15
5
mA
µA
µA
VCC Standby Current (Note 2)
VCC Reset Current (Note 2)
CE#, RESET# = VCC 0.3 V
RESET# = VSS 0.3 V
5
VIH = VCC 0.3 V;
VIL = VSS 0.3 V
ICC5
Automatic Sleep Mode (Notes 2, 4)
0.2
5
µA
Byte
15
15
15
15
25
25
25
25
VCC Active Read-While-Program
Current (Notes 1, 2)
ICC6
CE# = VIL, OE# = VIH
CE# = VIL, OE# = VIH
mA
Word
Byte
VCC Active Read-While-Erase
Current (Notes 1, 2)
ICC7
ICC8
IACC
mA
mA
Word
VCC Active
Program-While-Erase-Suspended
Current (Notes 2, 5)
CE# = VIL, OE# = VIH
CE# = VIL, OE# = VIH
10
15
ACC pin
5
10
mA
mA
V
ACC Accelerated Program Current,
Word or Byte
V
CC pin
10
15
VIL
VIH
Input Low Voltage
Input High Voltage
–0.5
VCC x 0.2
VCC + 0.3
0.8 x VCC
V
Voltage for WP#/ACC Sector
Protect/Unprotect and Program
Acceleration
VHH
V
V
CC = 1.8–2.2 V
CC = 1.8–2.2 V
8.5
9
9.5
V
V
Voltage for Autoselect and
Temporary Sector Unprotect
VID
11
VOL
VOH1
VOH2
VLKO
Output Low Voltage
IOL = 2.0 mA, VCC = VCC min
OH = –2.0 mA, VCC = VCC min
IOH = –100 µA, VCC = VCC min
0.25
V
V
I
0.7 VCC
VCC–0.1
1.2
Output High Voltage
Low VCC Lock-Out Voltage (Note 5)
1.6
V
Notes:
1. The ICC current listed is typically less than 1 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is
200 nA.
ꢀ. Not 100% tested.
Am29DS323D
35
D A T A S H E E T
DC CHARACTERISTICS
Zero-Power Flash
25
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 9. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
12
10
8
2.2 V
6
4
1.8 V
2
0
1
2
3
4
5
Frequency in MHz
Note: T = 2ꢀ °C
Figure 10. Typical ICC1 vs. Frequency
36
Am29DS323D
D A T A S H E E T
TEST CONDITIONS
Table 16. Test Specifications
Test Condition 110 120
1 TTL gate
Unit
Device
Under
Test
Output Load
Output Load Capacitance, CL
30
pF
(including jig capacitance)
Input Rise and Fall Times
Input Pulse Levels
C
L
5
ns
V
0.0–2.0 V
Input timing measurement
reference levels
1.0
1.0
V
V
Note: Diodes are IN3064 or equivalent
Output timing measurement
reference levels
Figure 11. Test Setup
Key To Switching Waveforms
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Does Not Apply
Changing, State Unknown
Center Line is High Impedance State (High Z)
2.0 V
0.0 V
1.0 V
1.0 V
Input
Measurement Level
Output
Figure 12. Input Waveforms and Measurement Levels
Am29DS323D
37
D A T A S H E E T
AC CHARACTERISTICS
Memory Array Read-Only Operations
Parameter
JEDEC
tAVAV
Std
tRC
tACC
tCE
Description
Test Setup
110
110
110
110
120
120
120
120
Unit
ns
Read Cycle Time (Note 1)
Min
Max
Max
Max
Max
Max
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
Address to Output Delay
CE#, OE# = VIL
OE# = VIL
ns
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High Z (Note 1)
Output Enable to Output High Z (Note 1)
ns
tOE
tDF
50
16
16
ns
ns
tDF
ns
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
tAXQX
tOH
Min
Min
0
0
ns
ns
tOEH
Output Enable Hold Time, Read Array (Note 1)
Notes:
1. Not 100% tested.
2. See Figure 11 and Table 16 for test specifications.
3. For data polling and toggle bit specifications, see Data Polling and Toggle Bit.
tRC
Addresses Stable
tACC
Addresses
CE#
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0 V
Figure 13. Read Operation Timings
38
Am29DS323D
D A T A S H E E T
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
All Speed Options
Unit
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
tReady
Max
Max
20
μs
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note)
tReady
500
ns
tRP
tRH
tRPD
tRB
RESET# Pulse Width
Min
Min
Min
Min
500
200
20
ns
ns
μs
ns
Reset High Time Before Read (See Note)
RESET# Low to Standby Mode
RY/BY# Recovery Time
0
Note: Not 100% tested.
RY/BY#
CE#, OE#
RESET#
tRH
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Figure 14. Reset Timings
Am29DS323D
39
D A T A S H E E T
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
JEDEC
Std
tELFL/ ELFH
tFLQZ
tFHQV
Description
110
120
Unit
ns
t
CE# to BYTE# Switching Low or High
BYTE# Switching Low to Output HIGH Z
BYTE# Switching High to Output Active
Max
Max
Min
5
40
ns
110
120
ns
CE#
OE#
BYTE#
tELFL
Data Output
(DQ0–DQ14)
Data Output
(DQ0–DQ7)
BYTE#
DQ0–DQ14
Switching
from word
to byte
Address
Input
DQ15
Output
mode
DQ15/A-1
tFLQZ
tELFH
BYTE#
BYTE#
Switching
from byte
to word
Data Output
(DQ0–DQ7)
Data Output
(DQ0–DQ14)
DQ0–DQ14
DQ15/A-1
mode
Address
Input
DQ15
Output
tFHQV
Figure 15. BYTE# Timings for Read Operations
CE#
The falling edge of the last WE# signal
WE#
BYTE#
tSET
(tAS
)
tHOLD (tAH
)
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 16. BYTE# Timings for Write Operations
Am29DS323D
40
D A T A S H E E T
AC CHARACTERISTICS
Erase and Program Operations
Parameter
JEDEC
tAVAV
Std
tWC
tAS
Description
110
120
Unit
ns
Write Cycle Time (Note 1)
Min
Min
Min
Min
110
120
tAVWL
Address Setup Time
0
ns
tASO
tAH
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
15
50
ns
tWLAX
ns
Address Hold Time From CE# or OE# high
during toggle bit polling
tAHT
Min
0
ns
tDVWH
tWHDX
tDS
tDH
Data Setup Time
Min
Min
Min
50
0
ns
ns
ns
Data Hold Time
tOEPH
Output Enable High during toggle bit polling
20
Read Recovery Time Before Write
(OE# High to WE# Low)
tGHWL
tGHWL
Min
0
ns
tELWL
tWHEH
tWLWH
tWHDL
tCS
tCH
CE# Setup Time
Min
Min
Min
Min
Min
Typ
Typ
0
0
ns
ns
ns
ns
ns
CE# Hold Time
tWP
Write Pulse Width
50
30
0
tWPH
tSR/W
Write Pulse Width High
Latency Between Read and Write Operations
Byte
Programming Operation (Note 2)
Word
9
tWHWH1
tWHWH1
µs
µs
13
Accelerated Programming Operation,
Word or Byte (Note 2)
tWHWH1
tWHWH2
tWHWH1
Typ
7
tWHWH2
tVCS
Sector Erase Operation (Note 2)
VCC Setup Time (Note 1)
Typ
Min
Min
Min
2
50
0
sec
µs
tRB
Write Recovery Time from RY/BY#
Program/Erase Valid to RY/BY# Delay
ns
tBUSY
90
ns
Notes:
1. Not 100% tested.
2. See the Erase And Programming Performance section for more information.
Am29DS323D
41
D A T A S H E E T
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
Read Status Data (last two cycles)
tAS
PA
tWC
Addresses
555h
PA
PA
tAH
CE#
OE#
tCH
tWHWH1
tWP
WE#
Data
tWPH
tCS
tDS
tDH
PD
DOUT
A0h
Status
tBUSY
tRB
RY/BY#
VCC
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 17. Program Operation Timings
VHH
VIL or VIH
WP#/ACC
VIL or VIH
tVHH
tVHH
Figure 18. Accelerated Program Timing Diagram
42
Am29DS323D
D A T A S H E E T
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
Read Status Data
VA
tAS
SA
tWC
VA
Addresses
CE#
2AAh
555h for chip erase
tAH
tCH
OE#
tWP
WE#
tWPH
tWHWH2
tCS
tDS
tDH
In
Data
Complete
55h
30h
Progress
10 for Chip Erase
tBUSY
tRB
RY/BY#
VCC
tVCS
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status).
2. These waveforms are for the word mode.
Figure 19. Chip/Sector Erase Operation Timings
Am29DS323D
43
D A T A S H E E T
AC CHARACTERISTICS
tWC
Valid PA
tWC
tRC
tWC
Valid PA
Valid RA
Valid PA
Addresses
tAH
tCPH
tACC
tCE
CE#
tCP
tOE
OE#
tOEH
tGHWL
tWP
WE#
tDF
tWPH
tDS
tOH
tDH
Valid
Out
Valid
In
Valid
In
Valid
In
Data
tSR/W
WE# Controlled Write Cycle
Read Cycle
CE# Controlled Write Cycles
Figure 20. Back-to-back Read/Write Cycle Timings
44
Am29DS323D
D A T A S H E E T
AC CHARACTERISTICS
Data Polling and Toggle Bit
Parameter
All Speed
Options
JEDEC
tAVAV
Std
tRC
tACC
tCE
Description
Test Setup
Unit
ns
Read Cycle Time (Note 1)
Min
Max
Max
Max
Max
Max
200
200
200
50
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
Address to Output Delay
CE#, OE# = VIL
OE# = VIL
ns
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High Z (Note 1)
Output Enable to Output High Z (Note 1)
ns
tOE
tDF
ns
16
ns
tDF
16
ns
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
tAXQX
tOH
Min
Min
0
ns
ns
Output Enable Hold
Time (Note 1)
Data Polling
and Toggle Bit
tOEH
10
Notes:
1. Not 100% tested.
See Figure 11 and Table 16 for test specifications.
tRC
Addresses
CE#
VA
tACC
tCE
VA
VA
tCH
tOE
OE#
WE#
tOEH
tDF
tOH
Complement
High Z
High Z
DQ7
Valid Data
Valid Data
Complement
True
DQ0–DQ6
Status Data
True
Status Data
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 21. Data# Polling Timings (During Embedded Algorithms)
Am29DS323D
45
D A T A S H E E T
AC CHARACTERISTICS
tAHT
tAS
Addresses
tAHT
tASO
CE#
tOEH
WE#
tCEPH
tOEPH
OE#
tDH
Valid Data
tOE
Valid
Status
Valid
Status
Valid
Status
DQ6/DQ2
Valid Data
(first read)
(second read)
(stops toggling)
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle
Figure 22. Toggle Bit Timings (During Embedded Algorithms)
Enter
Embedded
Erasing
Erase
Suspend
Enter Erase
Suspend Program
Erase
Resume
Erase
Erase Suspend
Read
Erase
Suspend
Program
Erase
Complete
WE#
Erase
Erase Suspend
Read
DQ6
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle
DQ2 and DQ6.
Figure 23. DQ2 vs. DQ6
46
Am29DS323D
D A T A S H E E T
AC CHARACTERISTICS
Temporary Sector/Sector Block Unprotect
Parameter
JEDEC
Std
tVIDR
tVHH
Description
All Speed Options
Unit
ns
VID Rise and Fall Time (See Note)
VHH Rise and Fall Time (See Note)
Min
Min
500
500
ns
RESET# Setup Time for Temporary
Sector/Sector Block Unprotect
tRSP
Min
Min
4
4
μs
μs
RESET# Hold Time from RY/BY# High for
Temporary Sector/Sector Block Unprotect
tRRB
Note: Not 100% tested.
VID
VID
RESET#
VSS, VIL,
or VIH
VSS, VIL,
or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRRB
tRSP
RY/BY#
Figure 24. Temporary Sector/Sector Block
Unprotect Timing Diagram
Am29DS323D
47
D A T A S H E E T
AC CHARACTERISTICS
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Valid*
Status
Sector/Sector Block Protect or Unprotect
60h 60h
Verify
40h
Data
Sector/Sector Block Protect: 150 µs,
Sector/Sector Block Unprotect: 15 ms
1 µs
CE#
WE#
OE#
* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 25. Sector/Sector Block Protect/Unprotect Timing Diagram
48
Am29DS323D
D A T A S H E E T
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Parameter
JEDEC
tAVAV
Std
tWC
tAS
Description
110
120
Unit
ns
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Min
Min
Min
Min
Min
110
120
tAVWL
tELAX
tDVEH
tEHDX
0
50
50
0
ns
tAH
tDS
tDH
ns
ns
ns
Read Recovery Time Before Write
(OE# High to WE# Low)
tGHEL
tGHEL
Min
0
ns
tWLEL
tEHWH
tELEH
tEHEL
tWS
tWH
tCP
WE# Setup Time
WE# Hold Time
Min
Min
Min
Min
Typ
Typ
0
0
ns
ns
ns
ns
CE# Pulse Width
CE# Pulse Width High
50
30
9
tCPH
Byte
Programming Operation
(Note 2)
tWHWH1
tWHWH1
µs
Word
13
Accelerated Programming Operation,
Word or Byte (Note 2)
tWHWH1
tWHWH1
tWHWH2
Typ
Typ
7
2
µs
tWHWH2
Notes:
Sector Erase Operation (Note 2)
sec
1. Not 100% tested.
2. See the Erase And Programming Performance section for more information.
Am29DS323D
49
D A T A S H E E T
AC CHARACTERISTICS
555 for program
PA for program
2AA for erase
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tWH
tAS
tAH
WE#
OE#
tGHEL
tWHWH1 or 2
tCP
CE#
Data
tWS
tCPH
tDS
tBUSY
tDH
DQ7#
DOUT
tRH
A0 for program
55 for erase
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
4. Waveforms are for the word mode.
Figure 26. Alternate CE# Controlled Write (Erase/Program) Operation Timings
50
Am29DS323D
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1) Max (Note 2)
Unit
sec
sec
µs
Comments
Sector Erase Time
2
130
9
15
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
Byte Program Time
Word Program Time
Accelerated Byte/Word Program Time
270
390
210
160
81
13
7
µs
Excludes system level
overhead (Note 5)
µs
Byte Mode
Word Mode
54
27
Chip Program Time
(Note 3)
sec
Notes:
1. Typical program and erase times assume the following conditions: 2ꢀ°C, 2.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.2 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
ꢀ. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 14 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
11 V
Input voltage with respect to VSS on all I/O pins
VCC Current
–1.0 V
VCC + 1.0 V
+100 mA
–100 mA
Note: Includes all pins except VCC. Test conditions: VCC = 2.0 V, one pin at a time.
DATA RETENTION
Parameter Description
Test Conditions
Min
10
Unit
Years
Years
150°C
125°C
Minimum Pattern Data Retention Time
20
Am29DS323D
51
D A T A S H E E T
PHYSICAL DIMENSIONS
FBD048—48-ball Fine-Pitch Ball Grid Array (FBGA)
6 x 12 mm package
Dwg rev AF; 1/2000
xFBD 048
6.00 mm x 12.00 mm
PACKAGE
1.20
0.20
0.84
12.00 BSC
0.94
6.00 BSC
5.60 BSC
4.00 BSC
8
6
48
0.25 0.30
0.35
0.80 BSC
0.40 BSC
52
Am29DS323D
D A T A S H E E T
PHYSICAL DIMENSIONS
TS 048—48-Pin Standard TSOP
Dwg rev AA; 10/99
Am29DS323D
53
D A T A S H E E T
REVISION SUMMARY
AC Characteristics—Erase and Program
Operations table; Alternate CE# Controlled Erase
and Program Operations table
Changed typical and maximum byte and word pro-
gramming times to match changes in erase and
program performance table.
Revision A (December 1, 1999)
Released page 1 only.
Publication Number 23480, Revision A
(January 25, 2000)
Released as full data sheet. The publication number
has been changed from 22394 to 23480.
Erase and Program Performance
Changed the following specifications: typical and max-
imum byte program time, typical and maximum word
program time, typical and maximum chip program time
for both word and byte modes.
Revision A+1 (June 16, 2000)
Global
The 100 ns speed option has been replaced by a 110
ns option.
Revision A+2 (November 1, 2000)
The data sheet status has changed from Advance In-
formation to Preliminary.
Global
Deleted contact AMD for availability notes for TSOP
package. Added TSOP valid combinations to the Or-
dering Information section. In Tables 7 and 14,
changed data for Secured Silicon Sector Factory Pro-
tect to 85h (factory locked) and 05h (not factory
locked).
Ordering Information
In the orderi4ng part number, changed FBGA package
code to WM. For 6 x 12 FBGA packages only, the
physical marking for regulated voltage range devices
is now Q and the physical marking for full voltage
range devices is now U.
Revision A+3 (November 22, 2000)
Ordering Information
Removed Preliminary status from document.
Optional processing: Deleted the burn-in option.
Table 4, Secured Silicon Sector Addresses for Top
Boot Devices. Table 6, Secured Silicon Sector Ad-
dresses for Bottom Boot Devices: Added ESN
addresses to tables.
DC Characteristics table
CMOS Compatible: Changed maximum specification
on VLKO to 1.6 V.
AC Characteristics—Read-Only Operations
Changed tDF to 16 ns from 30 ns.
Factory Locked: Secured Silicon Sector Programmed
and Protected at the Factory: Corrected ESN address
range.
Autoselect Command Sequence: Added table to clar-
ify explanation of autoselect codes.
AC Characteristics—Data Polling and Toggle Bit
Added table. Timing specifications for data polling and
toggle bit operations differ from those for memory
array read operations.
Revision A+4 (January 25, 2005)
Changed to final datasheet status.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limita-
tion, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as con-
templated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor de-
vices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design mea-
sures into your facility and equipment such as redundancy, fire protection, and prevention of over current levels and other abnormal operating
conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign
Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior au-
thorization by the respective government entity will be required for export of those products.
Trademarks
Copyright © 2000 – 2005 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
54
Am29DS323D
D A T A S H E E T
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
Am29DS323D
55
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