AM29F010B-90DWF1 [SPANSION]
Flash, 128KX8, 90ns, WAFER-30;型号: | AM29F010B-90DWF1 |
厂家: | SPANSION |
描述: | Flash, 128KX8, 90ns, WAFER-30 |
文件: | 总12页 (文件大小:324K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Am29F010B Known Good Die
Data Sheet (Retired Product)
Am29F010B Known Good Die Cover Sheet
This product has been retired and is not recommended for designs. Please contact your Spansion representative for
alternates. Availability of this document is retained for reference and historical purposes only.
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
made are the result of normal data sheet improvement and are noted in the document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number 23479
Revision A
Amendment 3
Issue Date March 2, 2009
D a t a S h e e t ( R e t i r e d P r o d u c t )
This page left intentionally blank.
2
Am29F010B Known Good Die
23479_A3 March 2, 2009
SUPPLEMENT
Am29F010B Known Good Die
1 Megabit (128 K x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory—Die Revision 1
This product has been retired and is not recommended for designs. Please contact your Spansion representative
for alternates. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
■ Embedded Algorithms
— 5.0 V 10ꢀ for read, erase, and program operations
— Simplifies system-level power requirements
— Embedded Erase algorithm automatically
pre-programs and erases the chip or any
combination of designated sector
■ Manufactured on 0.32 µm process technology
— Embedded Program algorithm automatically
programs and verifies data at specified address
— Compatible with Am29F010 and Am29F010A
device
■ Erase Suspend/Resume
■ High performance
— Supports reading data from a sector not
being erased
— 90 or 120 ns maximum access time
■ Low power consumption
■ Minimum 1,000,000 program/erase cycles
— 12 mA typical active read current
— 30 mA typical program/erase current
— <1 µA typical standby current
guaranteed
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
■ Compatible with JEDEC standards
■ Flexible sector architecture
— Eight uniform sectors
— Pinout and software compatible with
single-power-supply flash
— Any combination of sectors can be erased
— Supports full chip erase
— Superior inadvertent write protection
■ Data# Polling and Toggle Bits
■ Sector protection
— Provides a software method of detecting program
or erase cycle completion
— Hardware-based feature that disables/re-enables
program and erase operations in any
combination of sectors
■ Tested to datasheet specifications at
temperature
— Sector protection/unprotection can be
implemented using standard PROM
programming equipment
■ Quality and reliability levels equivalent to
standard packaged components
Publication# 22939
Rev: A Amendment/3
Issue Date: March 2, 2009
S U P P L E M E N T
GENERAL DESCRIPTION
The Am29F010B in Known Good Die (KGD) form is a
1 Mbit, 5.0 Volt-only Flash memory. AMD defines KGD
as standard product in die form, tested for functionality
and speed. AMD KGD products have the same reli-
ability and quality as AMD products in packaged form.
automatically times the program pulse widths and
verifies proper cell margin.
Device erasure occurs by executing the erase com-
mand sequence. This invokes the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The Am29F010B is a 1 Mbit, 5.0 Volt-only Flash
memory organized as 131,072 bytes. The Am29F010B
is offered in 32-pin PDIP, PLCC and TSOP packages.
The byte-wide data appears on DQ0-DQ7. The de-
vice is designed to be programmed in-system with the
The host system can detect whether a program or
erase operation is complete by reading the DQ7 (Data#
Polling) and DQ6 (toggle) status bits. After a program
or erase cycle has been completed, the device is ready
to read array data or accept another command.
standard system 5.0 Volt V supply. A 12.0 volt V is not
CC
PP
required for program or erase operations. The device can
also be programmed or erased in standard EPROM
programmers.
This device is manufactured using AMD’s 0.32 µm pro-
cess technology, and offers all the features and benefits
of the Am29F010 and Am29F010A.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is erased
when shipped from the factory.
The standard device offers access times of 45, 55, 70,
90, and 120 ns, allowing high-speed microprocessors
to operate without wait states. To eliminate bus conten-
tion the device has separate chip enable (CE#), write
enable (WE#) and output enable (OE#) controls.
The hardware data protection measures include a
low V detector automatically inhibits write operations
CC
during power transitions. The hardware sector protec-
tion feature disables both program and erase operations
in any combination of the sectors of memory, and is im-
plemented using standard EPROM programmers.
The device requires only a single 5.0 volt power sup-
ply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The system can place the device into the standby mode.
Power consumption is greatly reduced in this mode.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability, and cost
effectiveness. The device electrically erases all bits
within a sector simultaneously via Fowler-Nordheim
tunneling. The bytes are programmed one byte at a
time using the EPROM programming mechanism of hot
electron injection.
Electrical Specifications
Device programming occurs by executing the program
command sequence. This invokes the Embedded Pro-
gram algorithm—an internal algorithm that
Refer to the Am29F010B data sheet, publication
number 22336, for full electrical specifications for the
Am29F010B in KGD form.
2
Am29F010B Known Good Die
S U P P L E M E N T
PRODUCT SELECTOR GUIDE
Family Part Number
Am29F010B KGD
Speed Option (VCC = 5.0 V ± 10ꢀ)
Max Access Time, tACC (ns)
Max CE# Access, tCE (ns)
Max OE# Access, tOE (ns)
-90
90
90
35
-120
120
120
50
DIE PHOTOGRAPH
DIE PAD LOCATIONS
30 29 28
7
6
5
4
3
2
1
27 26
8
25
AMD logo location
9
24
23
10
11 12 13 14 15 16 17 18 19 20 21 22
Am29F010B Known Good Die
3
S U P P L E M E N T
PAD DESCRIPTION
Pad Center (mils)
Pad Center (millimeters)
Pad
Signal
X
Y
X
Y
1
VCC
A16
A15
A12
A7
0.00
0.00
0.00
0.00
2
–6.78
–12.20
–18.03
–23.46
–29.29
–34.72
–41.75
–41.14
–41.30
–35.88
–30.04
–23.81
–17.89
–12.06
–6.40
–0.59
5.25
0.00
–0.17
–0.31
–0.46
–0.60
–0.74
–0.88
–1.06
–1.04
–1.05
–0.91
–0.76
–0.60
–0.45
–0.31
–0.16
–0.01
0.13
0.00
3
0.00
0.00
4
0.00
0.00
5
0.00
0.00
6
A6
0.00
0.00
7
A5
0.00
0.00
8
A4
–5.01
–0.13
–2.97
–3.41
–3.41
–3.41
–3.39
–3.39
–3.39
–3.39
–3.39
–3.39
–3.39
–3.39
–3.39
–3.41
–3.41
–2.97
–0.13
–0.01
0.00
9
A3
–116.93
–134.13
–134.13
–134.13
–133.31
–133.31
–133.31
–133.31
–133.31
–133.31
–133.31
–133.31
–133.31
–134.37
–134.13
–116.93
–5.01
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
A2
A1
A0
D0
D1
D2
VSS
D3
D4
D5
11.16
17.00
22.92
29.09
35.02
34.68
35.45
29.27
23.34
17.92
12.08
6.66
0.28
D6
0.43
D7
0.58
CE#
A10
OE#
A11
A9
0.74
0.89
0.88
0.90
–0.25
0.74
A8
0.00
0.59
A13
A14
WE#
0.00
0.46
0.00
0.00
0.31
0.00
0.00
0.17
0.00
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
4
Am29F010B Known Good Die
S U P P L E M E N T
ORDERING INFORMATION
Standard Products
AMD KGD products are available in several packages and operating ranges. The order number (Valid Combination) is formed
by a combination of the following:
Am29F010B
-90
DP
C
1
DIE REVISION
This number refers to the specific AMD manufacturing process and
product technology reflected in this document. It is entered in the
revision field of AMD standard product nomenclature.
TEMPERATURE RANGE
C
I
=
=
=
Commercial (0°C to +70°C)
Industrial (–40°C to +85°C)
Extended (–55°C to +125°C)
E
PACKAGE TYPE AND MINIMUM ORDER QUANTITY
DP
DG
DT
DW
=
=
=
=
Waffle Pack
400 die per 5 tray stack
Gel-Pak® Die Tray
648 die per 6 tray stack
Surftape™ (Tape and Reel)
2500 per 7-inch reel
Gel-Pak® Wafer Tray (sawn wafer on frame)
Call AMD sales office for minimum order quantity
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am29F010B Known Good Die
1 Megabit (128 K x 8-Bit) CMOS Flash Memory—Die Revision 1
5.0 Volt-only Program and Erase
Valid Combinations
Valid Combinations
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
AM29F010B-90
AM29F010B-120
DPC 1, DPI 1, DPE 1,
DGC 1, DGI 1, DGE 1,
DTC 1, DTI 1, DTE 1,
DWC 1, DWI 1, DWE 1
Am29F010B Known Good Die
5
S U P P L E M E N T
PACKAGING INFORMATION
Surftape Packaging
Direction of Feed
AMD logo location
Orientation relative to
leading edge of tape
and reel
Gel-Pak and Waffle Pack Packaging
Orientation relative to
top left corner of
Gel-Pak
AMD logo location
and Waffle Pack
cavity plate
6
Am29F010B Known Good Die
S U P P L E M E N T
PRODUCT TEST FLOW
Figure 1 provides an overview of AMD’s Known Good
Die test flow. For more detailed information, refer to the
Am29F010B product qualification database supple-
ment for KGD. AMD implements quality assurance pro-
cedures throughout the product test flow. In addition,
an off-line quality monitoring program (QMP) further
guarantees AMD quality standards are met on Known
Good Die products. These QA procedures also allow
AMD to produce KGD products without requiring or
implementing burn-in.
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 1
Data Retention
Bake
24 hours at 250°C
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 2
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 3
High Temperature
Speed
Incoming Inspection
Wafer Saw
Die Separation
100ꢀ Visual Inspection
Die Pack
Packaging for Shipment
Shipment
Figure 1. AMD KGD Product Test Flow
Am29F010B Known Good Die
7
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
MANUFACTURING INFORMATION
Die dimensions . . . . . . . . . . . . . . . 90 mils x 159 mils
2.28 mm x 4.04 mm
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . . FASL
Wafer Sort Test . . . . . . . . . . . . . .Sunnyvale, CA, USA
. . . . . . . . . . . . . . . . . . . . . . . . .and Penang, Malaysia
Die Thickness. . . . . . . . . . . . . . . ~20 mils or ~500 µm
Bond Pad Size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils
115.9 µm x 115.9 µm
Manufacturing ID. . . . . . . . . . . . . . . . . . . . . . . . 98A01
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Pad Area Free of Passivation . . . . . . . . . .13.96 mils
2
9,025 µm
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
Bond Pad Metalization . . . . . . . . . . . . . . . . . . . . Al/Cu
SPECIAL HANDLING INSTRUCTIONS
Processing
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
Passivation. . . . . . . . . . . . . . . . . . . . . . . SiN/SOG/SiN
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250°C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30ꢀ to 60ꢀ relative humidity.
DC OPERATING CONDITIONS
V
(Supply Voltage) . . . . . . . . . . . . . . .4.5 V to 5.5 V
CC
Junction Temperature Under Bias . .T (max) = 130°C
J
For Read-only . . . . . . . . . . .T (max) = 140°C
Storage
J
Operating Temperature . . . Commercial 0°C to +70°C
Industrial –40°C to +85°C
Store at a maximum temperature of 30°C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
Extended –55°C to +125°C
8
Am29F010B Known Good Die
S U P P L E M E N T
WITHOUT LIMITING THE FOREGOING, EXCEPT TO
TERMS AND CONDITIONS OF SALE FOR
AMD NON-VOLATILE MEMORY DIE
THE EXTENT THAT AMD EXPRESSLY WARRANTS
TO BUYER IN A SEPARATE AGREEMENT SIGNED
BY AMD, AMD MAKES NO WARRANTY WITH
RESPECT TO THE DIE’S PROCESSING OF DATE
DATA, AND SHALL HAVE NO LIABILITY FOR
DAMAGES OF ANY KIND, UNDER EQUITY, LAW, OR
ANY OTHER THEORY, DUE TO THE FAILURE OF
SUCH KNOWN GOOD DIE TO PROCESS ANY PAR-
TICULAR DATA CONTAINING DATES, INCLUDING
DATES IN AND AFTER THE YEAR 2000, WHETHER
OR NOT AMD RECEIVED NOTICE OF THE POSSI-
BILITY OF SUCH DAMAGES.
All transactions relating to unpackaged die under this
agreement shall be subject to AMD’s standard terms
and conditions of sale, or any revisions thereof, which
revisions AMD reserves the right to make at any time
and from time to time. In the event of conflict between
the provisions of AMD’s standard terms and conditions
of sale and this agreement, the terms of this agreement
shall be controlling.
AMD warrants unpackaged die of its manufacture
(“Known Good Die” or “Die”) against defective mate-
rials or workmanship for a period of one (1) year from
date of shipment. This warranty does not extend
beyond the first purchaser of said Die. Buyer assumes
full responsibility to ensure compliance with the
appropriate handling, assembly and processing of
Known Good Die (including but not limited to proper
Die preparation, Die attach, wire bonding and related
assembly and test activities), and compliance with all
guidelines set forth in AMD’s specifications for Known
Good Die, and AMD assumes no responsibility for envi-
ronmental effects on Known Good Die or for any
activity of Buyer or a third party that damages the Die
due to improper use, abuse, negligence, improper
installation, accident, loss, damage in transit, or unau-
thorized repair or alteration by a person or entity other
than AMD (“Warranty Exclusions”).
THIS WARRANTY IS EXPRESSED IN LIEU OF ALL
OTHER WARRANTIES, EXPRESSED OR IMPLIED,
INCLUDING THE IMPLIED WARRANTY OF FITNESS
FOR A PARTICULAR PURPOSE, THE IMPLIED
WARRANTY OF MERCHANTABILITY AND OF ALL
OTHER OBLIGATIONS OR LIABILITIES ON AMD’s
PART, AND IT NEITHER ASSUMES NOR AUTHO-
RIZES ANY OTHER PERSON TO ASSUME FOR
AMD ANY OTHER LIABILITIES. THE FOREGOING
CONSTITUTES THE BUYER’S SOLE AND EXCLU-
SIVE REMEDY FOR THE FURNISHING OF DEFEC-
TIVE OR NON CONFORMING KNOWN GOOD DIE
AND AMD SHALL NOT IN ANY EVENT BE LIABLE
FOR INCREASED MANUFACTURING COSTS,
DOWNTIME COSTS, DAMAGES RELATING TO
BUYER’S PROCUREMENT OF SUBSTITUTE DIE
(i.e., “COST OF COVER”), LOSS OF PROFITS, REV-
ENUES OR GOODWILL, LOSS OF USE OF OR
DAMAGE TO ANY ASSOCIATED EQUIPMENT, OR
ANY OTHER INDIRECT, INCIDENTAL, SPECIAL
OR CONSEQUENTIAL DAMAGES BY REASON OF
THE FACT THAT SUCH KNOWN GOOD DIE SHALL
HAVE BEEN DETERMINED TO BE DEFECTIVE OR
NON CONFORMING.
The liability of AMD under this warranty is limited, at
AMD’s option, solely to repair the Die, to send replace-
ment Die, or to make an appropriate credit adjustment
or refund in an amount not to exceed the original pur-
chase price actually paid for the Die returned to AMD,
provided that: (a) AMD is promptly notified by Buyer in
writing during the applicable warranty period of any
defect or nonconformity in the Known Good Die; (b)
Buyer obtains authorization from AMD to return the
defective Die; (c) the defective Die is returned to AMD
by Buyer in accordance with AMD’s shipping instruc-
tions set forth below; and (d) Buyer shows to AMD’s
satisfaction that such alleged defect or nonconformity
actually exists and was not caused by any of the above-
referenced Warranty Exclusions. Buyer shall ship such
defective Die to AMD via AMD’s carrier, collect. Risk of
loss will transfer to AMD when the defective Die is pro-
vided to AMD’s carrier. If Buyer fails to adhere to these
warranty returns guidelines, Buyer shall assume all risk
of loss and shall pay for all freight to AMD’s specified
location. The aforementioned provisions do not extend
the original warranty period of any Known Good Die
that has either been repaired or replaced by AMD.
Buyer agrees that it will make no warranty representa-
tions to its customers which exceed those given by
AMD to Buyer unless and until Buyer shall agree to
indemnify AMD in writing for any claims which exceed
AMD’s warranty.
Known Good Die are not designed or authorized for
use as components in life support appliances, devices
or systems where malfunction of the Die can reason-
ably be expected to result in a personal injury. Buyer’s
use of Known Good Die for use in life support applica-
tions is at Buyer’s own risk and Buyer agrees to fully
indemnify AMD for any damages resulting in such use
or sale.
Am29F010B Known Good Die
9
S U P P L E M E N T
REVISION SUMMARY
Revision A3 (March 2, 2009)
Global
Revision A+1 (August 4, 2000)
Physical Specifications
Added obsolescence information.
Deleted Si from bond pad metalization specification.
Revision A+2 (June 27, 2001)
Added Penang, Malaysia, as a test facility (ACN 2016).
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as
contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal
operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,
the prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under
development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this
document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose,
merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any
damages of any kind arising out of the use of the information in this document.
Copyright © 2000–2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered
trademarks of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks
of their respective companies.
Copyright © 2006-2009 Spansion Inc. All rights reserved. Spansion®, the Spansion Logo, MirrorBit®, MirrorBit® Eclipse™, ORNAND™
,
ORNAND2™, HD-SIM™, EcoRAM™ and combinations thereof, are trademarks of Spansion LLC in the US and other countries. Other names
used are for informational purposes only and may be trademarks of their respective owners.
10
Am29F010B Known Good Die
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