AM29F200BB-120DTF1 [SPANSION]
Flash, 128KX16, 120ns, SURF TAPE PACKAGE-42;型号: | AM29F200BB-120DTF1 |
厂家: | SPANSION |
描述: | Flash, 128KX16, 120ns, SURF TAPE PACKAGE-42 |
文件: | 总12页 (文件大小:456K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Am29F200B Known Good Die
Data Sheet (Retired Product)
Am29F200B Known Good Die Cover Sheet
This product has been retired and is not recommended for designs. Please contact your Spansion representative for
alternates. Availability of this document is retained for reference and historical purposes only.
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
made are the result of normal data sheet improvement and are noted in the document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number 21257
Revision D
Amendment 6
Issue Date March 3, 2009
D a t a S h e e t ( R e t i r e d P r o d u c t )
This page left intentionally blank.
2
Am29F200B Known Good Die
21257_D6 March 3, 2009
SUPPLEMENT
Am29F200B Known Good Die
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1
This product has been retired and is not recommended for designs. Please contact your Spansion representative
for alternates. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10% for read and write operations
■ Embedded Algorithms
— Minimizes system level power requirements
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
■ Manufactured on 0.32 µm process technology
— Compatible with 0.5 µm Am29F200A device
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ High performance
— 70, 90, or 120 ns access time
■ Minimum 1,000,000 write/erase cycles
guaranteed
■ Low power consumption
■ Compatible with JEDEC standards
— 20 mA typical active read current (byte mode)
— Pinout and software compatible with
single-power-supply flash
— 28 mA typical active read current for
(word mode)
— Superior inadvertent write protection
— 30 mA typical program/erase current
— 1 µA typical standby current
■ Data# Polling and Toggle Bit
— Detects program or erase cycle completion
■ Ready/Busy# output (RY/BY#)
■ Sector erase architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors (byte mode)
— Hardware method for detection of program or
erase cycle completion
— One 8 Kword, two 4 Kword, one 16 Kword, and
three 32 Kword sectors (word mode)
■ Erase Suspend/Resume
— Supports full chip erase
— Supports reading data from a sector not being
erased
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
■ Hardware RESET# pin
— Resets internal state machine to the reading
array data
Sectors can be locked via programming
equipment
■ 20-year data retention at 125°C
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Tested to datasheet specifications at
temperature
■ Top or bottom boot block configurations
— Contact AMD for higher temperature range
devices
available
■ Quality and reliability levels equivalent to
standard packaged components
■ Shipped in waffle pack, surftape, and unsawn
wafer
■ 500 µm die/wafer thickness
Publication# 21257 Rev: D Amendment/6
Issue Date: March 3, 2009
S U P P L E M E N T
GENERAL DESCRIPTION
The Am29F200B in Known Good Die (KGD) form is a
2 Mbit, 5.0 Volt-only Flash memory. AMD defines KGD
as standard product in die form, tested for functionality
and speed. AMD KGD products have the same reli-
ability and quality as AMD products in packaged form.
grammed) before executing the erase operation. Dur-
ing erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6/
DQ2 (toggle) status bits. After a program or erase
cycle has been completed, the device is ready to read
array data or accept another command.
Am29F200B Features
The Am29F200B is organized as 262,144 bytes of 8
bits each or 131,072 words of 16 bits each. The 8-bit
data appears on DQ0-DQ7; the 16-bit data appears on
DQ0-DQ15. This device is designed to be programmed
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
in-system with the standard system 5.0 Volt V
CC
supply. A 12.0 volt V
erase operations.
is not required for program or
PP
The standard Am29F200B in KGD form offers an
access time of 70, 90, or 120 ns, allowing high-speed
microprocessors to operate without wait states. To
eliminate bus contention the device has separate chip
enable (CE#), write enable (WE#), and output enable
(OE#) controls.
Hardware data protection measures include a low
V
detector that automatically inhibits write opera-
CC
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved via programming equipment.
The device requires only a single 5.0 volt power sup-
ply for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using stan-
dard microprocessor write timings. Register contents
serve as input to an internal state-machine that con-
trols the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the
programming and erase operations. Reading data out
of the device is similar to reading from other Flash or
EPROM devices.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The system can place the device into the standby mode.
Power consumption is greatly reduced in this mode.
AMD’s Flash technology combines years of Flash mem-
ory manufacturing experience to produce the highest lev-
els of quality, reliability and cost effectiveness. The device
electrically erases all bits within a sector simulta-
neously via Fowler-Nordheim tunneling. The data is
programmed using hot electron injection.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin.
Electrical Specifications
Refer to the Am29F200B data sheet, publication number
21526, for full electrical specifications on the Am29F200B.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already pro-
PRODUCT SELECTOR GUIDE
Family Part Number
Am29F200B KGD
Speed Option (V
= 5.0 V ± 10%)
-75 (V
= 5.0 V ± 5%)
-90
90
90
35
-120
120
120
50
CC
CC
Max access time, ns (tACC
Max CE# access time, ns (tCE
Max OE# access time, ns (tOE
)
70
70
30
)
)
4
Am29F200B Known Good Die
S U P P L E M E N T
DIE PHOTOGRAPH
DIE PAD LOCATIONS
9 8 7 6 5 4 3 2 1 42 41 40 3938
35 34
37 36
33
32
10
11
31
12
AMD logo location
1314 15 16 1718 1920 21 22 23
24 25 262728 2930
Am29F200B Known Good Die
5
S U P P L E M E N T
Pad Center (mils)
PAD DESCRIPTION
Pad Center (millimeters)
Pad
Signal
X
0.00
Y
0.00
X
Y
1
VCC
DQ4
DQ12
DQ5
DQ13
DQ6
DQ14
DQ7
DQ15/A-1
VSS
0.0000
–0.1727
–0.3251
–0.4724
–0.6223
–0.7696
–0.9220
–1.0693
–1.2192
–1.4148
–1.4605
–1.4605
–1.4503
–1.3030
–1.1659
–1.0160
–0.8788
–0.7315
–0.5918
–0.4420
–0.3048
–0.0610
0.2413
0.7696
0.9093
1.0566
1.1938
1.3437
1.4808
1.6281
1.6383
1.6383
1.6383
1.3970
1.2040
1.0541
0.9042
0.7544
0.6071
0.4572
0.3073
0.1575
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0356
–0.1651
–0.4572
–3.1725
–3.1725
–3.1725
–3.1725
–3.1725
–3.1725
–3.1648
–3.1725
–3.1725
–3.2664
–3.2664
–3.1725
–3.1725
–3.1725
–3.1725
–3.1725
–3.1725
–3.1725
–0.4572
–0.1651
0.0965
0.0584
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
2
–6.80
–12.80
–18.60
–24.50
–30.30
–36.30
–42.10
–48.00
–55.70
–57.50
–57.50
–57.10
–51.30
–45.90
–40.00
–34.60
–28.80
–23.30
–17.40
–12.00
–2.40
9.50
0.00
3
0.00
4
0.00
5
0.00
6
0.00
7
0.00
8
0.00
9
0.00
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
1.40
BYTE#
A16
–6.50
–18.00
–124.90
–124.90
–124.90
–124.90
–124.90
–124.90
–124.60
–124.90
–124.90
–128.60
–128.60
–124.90
–124.90
–124.90
–124.90
–124.90
–124.90
–124.90
–18.00
–6.50
3.80
A15
A14
A13
A12
A11
A10
A9
A8
WE#
RESET#
RY/BY#
A7
30.30
35.80
41.60
47.00
52.90
58.30
64.10
64.50
64.50
64.50
55.00
47.40
41.50
35.60
29.70
23.90
18.00
12.10
6.20
A6
A5
A4
A3
A2
A1
A0
CE#
VSS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
2.30
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
6
Am29F200B Known Good Die
S U P P L E M E N T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:
Am29F200B
T
-75
DP
C
1
DIE REVISION
This number refers to the specific AMD manufacturing process and
product technology reflected in this document. It is entered in the
revision field of AMD standard product nomenclature.
TEMPERATURE RANGE
C
I
=
=
=
Commercial (0°C to +70°C)
Industrial (–40°C to +85°C)
Extended (–55°C to +125°C)
E
Contact AMD for higher temperature range devices.
PACKAGE TYPE AND
MINIMUM ORDER QUANTITY
DP
DT
=
=
Waffle Pack
245 die per 5 tray stack
Surftape™ (Tape and Reel)
2500 per 7-inch reel
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T
B
=
=
Top sector
Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29F200B Known Good Die
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS Flash Memory—Die Revision 1
5.0 Volt-only Program and Erase
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD
sales office to confirm availability of specific valid combinations and to check on newly released combinations.
Valid Combinations
AM29F200BT-75,
AM29F200BB-75
(70 ns, VCC = 5.0 V 5%)
DPC 1, DPI 1, DPE 1,
AM29F200BT-90,
DTC 1, DTI 1, DTE 1,
AM29F200BB-90
AM29F200BT-120,
AM29F200BB-120
Am29F200B Known Good Die
7
S U P P L E M E N T
PACKAGING INFORMATION
Surftape Packaging
AMD logo location
Direction of Feed
Orientation relative to
leading edge of tape
and reel
Waffle Pack Packaging
Orientation relative to
top left corner of
Waffle Pack
cavity plate
AMD logo location
8
Am29F200B Known Good Die
S U P P L E M E N T
PRODUCT TEST FLOW
Figure 1 provides an overview of AMD’s Known Good
Die test flow. For more detailed information, refer to the
Am29F200B product qualification database supple-
ment for KGD. AMD implements quality assurance pro-
cedures throughout the product test flow. In addition,
an off-line quality monitoring program (QMP) further
guarantees AMD quality standards are met on Known
Good Die products. These QA procedures also allow
AMD to produce KGD products without requiring or
implementing burn-in.
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 1
Data Retention
Bake
24 hours at 250°C
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 2
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 3
Hot Temperature
Speed
Incoming Inspection
Wafer Saw
Die Separation
100% Visual Inspection
Die Pack
Packaging for Shipment
Shipment
Figure 1. AMD KGD Product Test Flow
Am29F200B Known Good Die
9
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
MANUFACTURING INFORMATION
Die dimensions . . . . . . . . . . . . . . 135 mils x 150 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . .3.43 mm x 3.81 mm
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . FASL
Test . . . . . . . . . . . . . . . . . . . . . . Sunnyvale, CA, USA,
. . . . . . . . . . . . . . . . . . . . . . . . .and Penang, Malaysia
Die Thickness. . . . . . . . . . . . . . . . . . . . . . . . 19.7 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .500 µm
Manufacturing ID (Top Boot) . . . . . . . . . . . . 98480AK
(Bottom Boot) . . . . . . . .98480ABK
Bond Pad Size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils
. . . . . . . . . . . . . . . . . . . . . . . . . .115.9 µm x 115.9 µm
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Pad Area Free of Passivation . . . . . . . . . .13.99 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 µm
2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42
Bond Pad Metalization . . . . . . . . . . . . . . . . . . . . Al/Cu
SPECIAL HANDLING INSTRUCTIONS
Processing
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250°C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
DC OPERATING CONDITIONS
V
(Supply Voltage) . . . . . . . . . . . . . . .4.5 V to 5.5 V
CC
Junction Temperature Under Bias:
Commercial, Industrial, and
Storage
Extended Temperature Range . . . . .T (max) = 130°C
J
Store at a maximum temperature of 30°C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
Operating Temperature
Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Extended . . . . . . . . . . . . . . . . . . –55°C to +125°C
Contact AMD for higher temperature range devices.
10
Am29F200B Known Good Die
S U P P L E M E N T
returns guidelines, Buyer shall assume all risk of loss
TERMS AND CONDITIONS OF SALE FOR
AMD NON-VOLATILE MEMORY DIE
and shall pay for all freight to AMD's specified location.
The aforementioned provisions do not extend the orig-
inal warranty period of any Known Good Die or
Wafer(s) that has either been repaired or replaced by
AMD.
All transactions relating to unpackaged die or unpack-
aged wafer(s) under this agreement shall be subject to
AMD’s standard terms and conditions of sale, or any
revisions thereof, which revisions AMD reserves the
right to make at any time and from time to time. In the
event of conflict between the provisions of AMD’s stan-
dard terms and conditions of sale and this agreement,
the terms of this agreement shall be controlling.
THIS WARRANTY IS EXPRESSED IN LIEU OF ALL
OTHER WARRANTIES, EXPRESSED OR IMPLIED,
INCLUDING THE IMPLIED WARRANTY OF FITNESS
FOR A PARTICULAR PURPOSE, THE IMPLIED
WARRANTY OF MERCHANTABILITY AND OF ALL
OTHER OBLIGATIONS OR LIABILITIES ON AMD's
PART, AND IT NEITHER ASSUMES NOR AUTHO-
RIZES ANY OTHER PERSON TO ASSUME FOR
AMD ANY OTHER LIABILITIES. THE FOREGOING
CONSTITUTES THE BUYER'S SOLE AND EXCLU-
SIVE REMEDY FOR THE FURNISHING OF DEFEC-
TIVE OR NON CONFORMING KNOWN GOOD
DIEOR WAFER(S) AND AMD SHALL NOT IN ANY
EVENT BE LIABLE FOR INCREASED MANUFAC-
TURING COSTS, DOWNTIME COSTS, DAMAGES
RELATING TO BUYER’S PROCUREMENT OF SUB-
STITUTE DIE OR WAFER(S) (i.e., “COST OF
COVER”), LOSS OF PROFITS, REVENUES OR
GOODWILL, LOSS OF USE OF OR DAMAGE TO
ANY ASSOCIATED EQUIPMENT, OR ANY OTHER
INDIRECT, INCIDENTAL, SPECIAL OR CONSE-
QUENTIAL DAMAGES BY REASON OF THE FACT
THAT SUCH KNOWN GOOD DIE OR WAFER(S)
SHALL HAVE BEEN DETERMINED TO BE DEFEC-
TIVE OR NON CONFORMING.
AMD warrants unpackaged die or unpackaged
wafer(s) of its manufacture (“Known Good Die,” “Die,”
or Wafer(s)) against defective materials or workman-
ship for a period of one (1) year from date of shipment.
This warranty does not extend beyond the first pur-
chaser of said Die or Wafer(s). Buyer assumes full
responsibility to ensure compliance with the appro-
priate handling, assembly and processing of Known
Good Die or Wafer(s) (including but not limited to
proper Die preparation, Die attach, backgrinding, wire
bonding and related assembly and test activities), and
compliance with all guidelines set forth in AMD’s spec-
ifications for Known Good Die or Wafer(s), and AMD
assumes no responsibility for environmental effects on
Known Good Die or Wafer(s) or for any activity of Buyer
or a third party that damages the Die or Wafer(s) due to
improper use, abuse, negligence, improper installation,
improper backgrinding, accident, loss, damage in
transit, or unauthorized repair or alteration by a person
or entity other than AMD (“Warranty Exclusions”).
The liability of AMD under this warranty is limited, at
AMD's option, solely to repair the Die or Wafer(s), to
send replacement Die or Wafer(s), or to make an
appropriate credit adjustment or refund in an amount
not to exceed the original purchase price actually paid
for the Die or Wafer(s) returned to AMD, provided that:
(a) AMD is promptly notified by Buyer in writing during
the applicable warranty period of any defect or noncon-
formity in the Known Good Die or Wafer(s); (b) Buyer
obtains authorization from AMD to return the defective
Die or Wafer(s); (c) the defective Die or Wafer(s) is
returned to AMD by Buyer in accordance with AMD’s
shipping instructions set forth below; and (d) Buyer
shows to AMD’s satisfaction that such alleged defect or
nonconformity actually exists and was not caused by
any of the above-referenced Warranty Exclusions.
Buyer shall ship such defective Die or Wafer(s) to AMD
via AMD’s carrier, collect. Risk of loss will transfer to
AMD when the defective Die or Wafer(s) is provided to
AMD’s carrier. If Buyer fails to adhere to these warranty
Buyer agrees that it will make no warranty representa-
tions to its customers which exceed those given by
AMD to Buyer unless and until Buyer shall agree to
indemnify AMD in writing for any claims which exceed
AMD's warranty.
Am29F200B Known Good Die
11
S U P P L E M E N T
REVISION SUMMARY
Revision A (1997)
Initial release.
Revision D+2 (July 12, 1999)
Global
The device is now available in the high temperature
Revision B (December 1997)
Formatted for 1998 flash data book.
range (–55°C to +140°C). T (max) for this range is
J
+145°C.
Revision C (November 1998)
Global
Revision D+3 (November 17, 1999)
Global
Formatted to match current template. Modified
Am29F200A data sheet for CS39S process technology.
Replaced references to high temperature ratings with a
note to contact AMD for such devices.
Terms and Conditions
Revision D+4 (June 27, 2001)
Manufacturing Information
Replaced warranty with new version.
Revision D (December 1998)
Added Penang, Malaysia as a test facility (ACN2016).
Global
Revision D+5 (July 27, 2007)
Ordering Information
Added -75 speed option.
Ordering Information
Removed package type options DG and DW
Changed Gel-Pak quantity to 486. Corrected Surftape
reel size to 7 inches.
Packaging Information
Removed all references to Gel-Pak
Packaging Information
Revision D6 (March 3, 2009)
Global
Added section. Moved orientation information from die
photograph section into this section.
Added obsolescence information.
Revision D+1 (June 14, 1999)
Physical Specifications
Corrected bond pad dimensions and deleted Si from
the bond pad metalization specification.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as
contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal
operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,
the prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under
development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this
document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose,
merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any
damages of any kind arising out of the use of the information in this document.
Copyright © 1997–2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered
trademarks of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks
of their respective companies.
Copyright © 2006–2009 Spansion Inc. All rights reserved. Spansion®, the Spansion Logo, MirrorBit®, MirrorBit® Eclipse™, ORNAND™
,
ORNAND2™, HD-SIM™, EcoRAM™ and combinations thereof, are trademarks of Spansion LLC in the US and other countries. Other names
used are for informational purposes only and may be trademarks of their respective owners.
12
Am29F200B Known Good Die
相关型号:
AM29F200BB-120DTI1
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
AMD
AM29F200BB-120DW1
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
AMD
AM29F200BB-120DWC1
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
AMD
AM29F200BB-120DWE1
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
AMD
AM29F200BB-120DWI1
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
AMD
©2020 ICPDF网 联系我们和版权申明