AM29LV800DB-70WBI [SPANSION]
Flash, 512KX16, 70ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, FBGA-48;型号: | AM29LV800DB-70WBI |
厂家: | SPANSION |
描述: | Flash, 512KX16, 70ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, FBGA-48 内存集成电路 |
文件: | 总46页 (文件大小:1040K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Am29LV800D
Data Sheet
RETIRED
PRODUCT
This product has been retired and is not recommended for designs. For new and current designs,
S29AL008D supersedes Am29LV800D and is the factory-recommended migration path for this
device. Please refer to the S29AL008D data sheet for specifications and ordering information. Avail-
ability of this document is retained for reference and historical purposes only.
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal data sheet improvement and are noted in the
document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number Am29LV800_00 Revision A Amendment 7 Issue Date December 4, 2006
THIS PAGE LEFT INTENTIONALLY BLANK.
DATA SHEET
Am29LV800D
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
This product has been retired and is not recommended for designs. For new and current designs, S29AL008D supersedes Am29LV800D and is the factory-recommended migration path
for this device. Please refer to the S29AL008D data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
■ Embedded Algorithms
— 2.7 to 3.6 volt read and write operations for
battery-powered applications
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
■ Manufactured on 0.23 µm process technology
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
— Compatible with 0.32 µm Am29LV800 device
■ High performance
■ Minimum 1 million write cycle guarantee
— Access times as fast as 70 ns
per sector
■ Ultra low power consumption (typical values at
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
■ Package option
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 48-ball FBGA
— 48-pin TSOP
— 15 mA program/erase current
— 44-pin SO
■ Flexible sector architecture
■ Compatibility with JEDEC standards
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
— Pinout and software compatible with
single-power supply Flash
— One 8 Kword, two 4 Kword, one 16 Kword, and
fifteen 32 Kword sectors (word mode)
— Superior inadvertent write protection
■ Data# Polling and toggle bits
— Supports full chip erase
— Provides a software method of detecting
program or erase operation completion
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked in-system or via
programming equipment
■ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■ Erase Suspend/Erase Resume
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■ Unlock Bypass Program Command
■ Hardware reset pin (RESET#)
— Reduces overall programming time when
issuing multiple program command sequences
— Hardware method to reset the device to reading
array data
■ Top or bottom boot block configurations
available
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication # Am29LV800D_00 Revision: A
Amendment: 7 Issue Date: December 4, 2006
D A T A S H E E T
GENERAL DESCRIPTION
The Am29LV800D is an 8 Mbit, 3.0 volt-only Flash
memory organized as 1,048,576 bytes or 524,288
words. The device is offered in 48-ball FBGA, 44-pin
SO, and 48-pin TSOP packages. For more informa-
tion, refer to publication number 21536. The
word-wide data (x16) appears on DQ15–DQ0; the
byte-wide (x8) data appears on DQ7–DQ0. This de-
vice requires only a single, 3.0 volt VCC supply to per-
form read, program, and erase operations. A standard
EPROM programmer can also be used to program and
erase the device.
before executing the erase operation. During erase,
the device automatically times the erase pulse widths
and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle
has been completed, the device is ready to read array
data or accept another command.
The sector erase architecture allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
This device is manufactured using AMD’s 0.23 µm pro-
cess technology, and offers all the features and bene-
fits of the Am29LV800B, which was manufactured
using 0.32 µm process technology.
Hardware data protection measures include a low
VCC detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved in-system or via program-
ming equipment.
The standard device offers access times of 70, 90, and
120 ns, allowing high speed microprocessors to oper-
ate without wait states. To eliminate bus contention the
device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
The device requires only a single 3.0 volt power sup-
ply for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The device is entirely command set compatible with
the JEDEC single-power-supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to
the system reset circuitry. A system reset would thus
also reset the device, enabling the system micropro-
cessor to read the boot-up firmware from the Flash
memory.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the
standby mode. Power consumption is greatly re-
duced in both these modes.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within
a sector simultaneously via Fowler-Nordheim tunnel-
ing. The data is programmed using hot electron injec-
tion.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
2
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
TABLE OF CONTENTS
Figure 6. Toggle Bit Algorithm..................................... 22
Table 6. Write Operation Status ..................................23
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 24
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . 24
Commercial (C) Devices ...................................... 24
Industrial (I) Devices ............................................. 24
Product Selector Guide . . . . . . . . . . . . . . . . . . . . .4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . .5
Special Handling Instructions for FBGA Package ..6
Pin Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . .8
Standard Products ..................................................8
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . .9
Table 1. Am29LV800D Device Bus Operations ............9
Word/Byte Configuration ........................................9
Requirements for Reading Array Data ...................9
Writing Commands/Command Sequences ..........10
Program and Erase Operation Status ..................10
Standby Mode ......................................................10
Automatic Sleep Mode .........................................10
RESET#: Hardware Reset Pin .............................10
Output Disable Mode ............................................11
Table 2. Am29LV800DT Top Boot Block
Sector Addresses ........................................................11
Table 3. Am29LV800DB Bottom Boot Block
Sector Addresses ........................................................12
Autoselect Mode ...................................................12
Table 4. Am29LV800D Autoselect Codes
(High Voltage Method) ................................................13
Sector Protection/Unprotection ............................13
Temporary Sector Unprotect ................................13
Figure 1. Temporary Sector Unprotect Operation....... 13
Figure 2. In-System Sector Protect/
V
CC Supply Voltages ............................................ 24
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . 25
CMOS Compatible ............................................... 25
Figure 9. ICC1 Current vs. Time (Showing Active and
Automatic Sleep Currents) .......................................... 26
Figure 10. Typical ICC1 vs. Frequency ......................... 26
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 11. Test Setup.................................................. 27
Table 7. Test Specifications ........................................27
Key to Switching Waveforms. . . . . . . . . . . . . . . . 27
Figure 12. Input Waveforms and
Measurement Levels................................................... 27
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 28
Read Operations .................................................. 28
Figure 13. Read Operations Timings .......................... 28
Hardware Reset (RESET#) .................................. 29
Figure 14. RESET# Timings........................................ 29
Word/Byte Configuration (BYTE#) ..................... 30
Figure 15. BYTE# Timings for Read Operations......... 30
Figure 16. BYTE# Timings for Write Operations......... 30
Erase/Program Operations ................................... 31
Figure 17. Program Operation Timings....................... 32
Figure 18. Chip/Sector Erase Operation Timings........ 33
Figure 19. Data# Polling Timings (During
Sector Unprotect Algorithms ....................................... 14
Hardware Data Protection ....................................15
Low VCC Write Inhibit ............................................15
Write Pulse “Glitch” Protection .............................15
Logical Inhibit .......................................................15
Power-Up Write Inhibit .........................................15
Command Definitions . . . . . . . . . . . . . . . . . . . . . 15
Reading Array Data ..............................................15
Reset Command ..................................................15
Autoselect Command Sequence ..........................15
Word/Byte Program Command Sequence ...........16
Unlock Bypass Command Sequence ...................16
Figure 3. Program Operation ...................................... 17
Chip Erase Command Sequence .........................17
Sector Erase Command Sequence ......................17
Erase Suspend/Erase Resume Commands .........18
Figure 4. Erase Operation........................................... 18
Table 5. Am29LV800D Command Definitions ............19
Write Operation Status . . . . . . . . . . . . . . . . . . . . 20
DQ7: Data# Polling ...............................................20
Figure 5. Data# Polling Algorithm ............................... 20
RY/BY#: Ready/Busy# .........................................21
DQ6: Toggle Bit I ..................................................21
DQ2: Toggle Bit II .................................................21
Reading Toggle Bits DQ6/DQ2 ............................21
DQ5: Exceeded Timing Limits ..............................22
DQ3: Sector Erase Timer .....................................22
Embedded Algorithms)................................................ 34
Figure 20. Toggle Bit Timings (During
Embedded Algorithms)................................................ 34
Figure 21. DQ2 vs. DQ6.............................................. 35
Temporary Sector Unprotect ................................ 35
Figure 22. Temporary Sector Unprotect
Timing Diagram........................................................... 35
Figure 23. Sector Protect/Unprotect
Timing Diagram........................................................... 36
Alternate CE# Controlled
Erase/Program Operations ................................... 37
Figure 24. Alternate CE# Controlled Write
Operation Timings....................................................... 38
Erase and Programming Performance . . . . . . . 39
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 39
TSOP and SO Pin Capacitance . . . . . . . . . . . . . . 39
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Physical Dimensions* . . . . . . . . . . . . . . . . . . . . . 40
TS 048—48-Pin Standard TSOP ........................ 40
FBB 048—48-Ball Fine-Pitch Ball Grid Array
(FBGA) 6 x 9 mm ................................................ 41
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 42
VBK 048 - 48 Ball Fine-Pitch Ball Grid Array (FBGA)
6.15 x 8.15 mm ..................................................... 42
SO 044—44-Pin Small Outline Package ............. 43
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 44
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
3
D A T A S H E E T
PRODUCT SELECTOR GUIDE
Family Part Number
Am29LV800D
Speed Options
Full Voltage Range: VCC = 2.7–3.6 V
-70
70
70
30
-90
90
90
35
-120
120
120
50
Max access time, ns (tACC
)
Max CE# access time, ns (tCE
)
Max OE# access time, ns (tOE
)
Note: See “AC Characteristics” for full specifications.
BLOCK DIAGRAM
DQ0–DQ15 (A-1)
RY/BY#
VCC
Sector Switches
VSS
Erase Voltage
Generator
Input/Output
Buffers
RESET#
State
Control
WE#
BYTE#
Command
Register
PGM Voltage
Generator
Data
Latch
Chip Enable
Output Enable
Logic
STB
CE#
OE#
Y-Decoder
Y-Gating
STB
VCC Detector
Timer
Cell Matrix
X-Decoder
A0–A18
4
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
CONNECTION DIAGRAMS
A15
A14
A13
A12
A11
A10
A9
1
2
3
4
5
6
7
8
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
A8
NC
NC
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
WE#
RESET#
NC
Standard TSOP
NC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
RY/BY#
A18
A17
A7
1
2
3
4
5
6
7
8
9
44 RESET#
43 WE#
42 A8
41 A9
A6
40 A10
A5
39 A11
A4
38 A12
A3
37 A13
A2
36 A14
A1 10
A0 11
35 A15
34 A16
SO
CE# 12
VSS 13
33 BYTE#
32 VSS
OE# 14
DQ0 15
DQ8 16
DQ1 17
DQ9 18
DQ2 19
DQ10 20
DQ3 21
DQ11 22
31 DQ15/A-1
30 DQ7
29 DQ14
28 DQ6
27 DQ13
26 DQ5
25 DQ12
24 DQ4
23 VCC
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
5
D A T A S H E E T
CONNECTION DIAGRAMS
FBGA
Top View, Balls Facing Down
A6
B6
C6
D6
E6
F6
G6
H6
A13
A12
A14
A15
A16
BYTE# DQ15/A-1 VSS
A5
A9
B5
A8
C5
D5
E5
F5
G5
H5
A10
A11
DQ7
DQ14
DQ13
DQ6
A4
B4
C4
D4
E4
F4
G4
H4
WE# RESET#
NC
NC
DQ5
DQ12
VCC
DQ4
A3
B3
C3
D3
E3
F3
G3
H3
RY/BY#
NC
A18
NC
DQ2
DQ10
DQ11
DQ3
A2
A7
B2
C2
A6
D2
A5
E2
F2
G2
H2
A17
DQ0
DQ8
DQ9
DQ1
A1
A3
B1
A4
C1
A2
D1
A1
E1
A0
F1
G1
H1
CE#
OE#
VSS
Flash memory devices in FBGA packages may be
damaged if exposed to ultrasonic cleaning methods.
The package and/or data integrity may be compro-
mised if the package body is exposed to temperatures
above 150°C for prolonged periods of time.
Special Handling Instructions for FBGA
Package
Special handling is required for Flash Memory prod-
ucts in FBGA packages.
6
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
PIN CONFIGURATION
LOGIC SYMBOL
A0–A18
= 19 addresses
19
DQ0–DQ14 = 15 data inputs/outputs
A0–A18
16 or 8
DQ15/A-1
= DQ15 (data input/output, word mode),
DQ0–DQ15
(A-1)
A-1 (LSB address input, byte mode)
= Selects 8-bit or 16-bit mode
= Chip enable
BYTE#
CE#
CE#
OE#
OE#
= Output enable
WE#
WE#
= Write enable
RESET#
BYTE#
RESET#
RY/BY#
VCC
= Hardware reset pin, active low
= Ready/Busy# output
RY/BY#
= 3.0 volt-only single power supply
(see Product Selector Guide for speed
options and voltage supply tolerances)
VSS
NC
= Device ground
= Pin not connected internally
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
7
D A T A S H E E T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combi-
nation) is formed by a combination of the elements below.
Am29LV800D
T
-70
E
C
TEMPERATURE RANGE
C
D
I
=
=
=
=
Commercial (0°C to +70°C)
Commercial (0°C to +70°C) with Pb-Free Package
Industrial (–40°C to +85°C)
Industrial (–40°C to +85°C) with Pb-Free Package
F
PACKAGE TYPE
E
=
=
=
48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048)
44-Pin Small Outline Package (SO 044)
S
WB
48-Ball Fine Pitch Ball Grid Array (FBGA)
0.80 mm pitch, 6 x 9 mm package (FBB048)
WC
=
=
48-Ball Fine Pitch Ball Grid Array (FBGA)
0.80 mm pitch, 6.15 x 8.15 mm package (VBK 048)
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T
B
=
=
Top sector
Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29LV800D
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS Flash Memory
3.0 Volt-only Read, Program, and Erase
Valid Combinations for TSOP and SO Packages
Valid Combinations for FBGA Packages
Order Number Package Marking
AM29LV800DT-70,
AM29LV800DB-70
AM29LV800DT-70,
WBC, WBI L800DT70V,
AM29LV800DT-90,
AM29LV800DB-90
EC, EI, ED, EF,
SC, SD, SF, SI
AM29LV800DB-70
L800DB70V
WBD, WBF
WCC, WCI
WCD, WCF
AM29LV800DT-90,
AM29LV800DB-90
L800DT90V,
L800DB90V
C, I,
D, F
AM29LV800DT-120,
AM29LV800DB-120
WBC, WBI
WBD, WBF
AM29LV800DT-120,
AM29LV800DB-120
L800DT12V,
L800DB12V
Valid Combinations
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
8
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The register is composed of latches that store the
commands, along with the address and data informa-
tion needed to execute the command. The contents of
the register serve as inputs to the internal state ma-
chine. The state machine outputs dictate the function
of the device. Table 1 lists the device bus operations,
the inputs and control levels they require, and the re-
sulting output. The following subsections describe
each of these operations in further detail.
Table 1. Am29LV800D Device Bus Operations
DQ8–DQ15
BYTE#
Addresses
(Note 1)
DQ0– BYTE#
Operation
CE# OE# WE# RESET#
DQ7
DOUT
DIN
= VIH
DOUT
DIN
= VIL
Read
Write
L
L
L
H
L
H
H
AIN
AIN
DQ8–DQ14 = High-Z,
DQ15 = A-1
H
VCC
0.3 V
±
VCC ±
0.3 V
Standby
X
X
X
High-Z High-Z
High-Z
Output Disable
Reset
L
H
X
H
X
H
L
X
X
High-Z High-Z
High-Z High-Z
High-Z
High-Z
X
Sector Address,
A6 = L, A1 = H,
A0 = L
Sector Protect (Note 2)
L
H
L
VID
DIN
X
X
Sector Address,
A6 = H, A1 = H,
A0 = L
Sector Unprotect (Note 2)
L
H
X
L
VID
VID
DIN
DIN
X
X
Temporary Sector Unprotect
X
X
AIN
DIN
High-Z
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A18:A0 in word mode (BYTE# = VIH), A18:A-1 in byte mode (BYTE# = VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector
Protection/Unprotection” section.
whether the device outputs array data in words or
bytes.
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O
pins DQ15–DQ0 operate in the byte or word configura-
tion. If the BYTE# pin is set at logic ‘1’, the device is in
word configuration, DQ15–DQ0 are active and con-
trolled by CE# and OE#.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No com-
mand is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. The device remains
enabled for read access until the command register
contents are altered.
If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are
active and controlled by CE# and OE#. The data I/O
pins DQ8–DQ14 are tri-stated, and the DQ15 pin is
used as an input for the LSB (A-1) address function.
Requirements for Reading Array Data
See “Reading Array Data” for more information. Refer
to the AC Read Operations table for timing specifica-
tions and to Figure 13 for the timing diagram. ICC1 in
the DC Characteristics table represents the active cur-
rent specification for reading array data.
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output con-
trol and gates array data to the output pins. WE#
should remain at VIH. The BYTE# pin determines
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
9
D A T A S H E E T
and the outputs are placed in the high impedance
state, independent of the OE# input.
Writing Commands/Command Sequences
To write a command or command sequence (which in-
cludes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range than
VIH.) If CE# and RESET# are held at VIH, but not within
VCC ± 0.3 V, the device will be in the standby mode, but
the standby current will be greater. The device re-
quires standard access time (tCE) for read access
when the device is in either of these standby modes,
before it is ready to read data.
For program operations, the BYTE# pin determines
whether the device accepts program data in bytes or
words. Refer to “Word/Byte Configuration” for more in-
formation.
The device features an Unlock Bypass mode to facili-
tate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are re-
quired to program a word or byte, instead of four. The
“Word/Byte Program Command Sequence” section
has details on programming data to the device using
both standard and Unlock Bypass command se-
quences.
If the device is deselected during erasure or program-
ming, the device draws active current until the
operation is completed.
In the DC Characteristics table, ICC3 and ICC4 repre-
sents the standby current specification.
Automatic Sleep Mode
An erase operation can erase one sector, multiple sec-
tors, or the entire device. Tables 2 and 3 indicate the
address space that each sector occupies. A “sector
address” consists of the address bits required to
uniquely select a sector. The “Command Definitions”
section has details on erasing a sector or the entire
chip, or suspending/resuming the erase operation.
The automatic sleep mode minimizes Flash device en-
ergy consumption. The device automatically enables
this mode when addresses remain stable for tACC + 30
ns. The automatic sleep mode is independent of the
CE#, WE#, and OE# control signals. Standard ad-
dress access timings provide new data when ad-
dresses are changed. While in sleep mode, output
data is latched and always available to the system.
After the system writes the autoselect command se-
quence, the device enters the autoselect mode. The
system can then read autoselect codes from the inter-
nal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in
this mode. Refer to the “Autoselect Mode” and “Au-
toselect Command Sequence” sections for more infor-
mation.
ICC4 in the DC Characteristics table represents the au-
tomatic sleep mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of re-
setting the device to reading array data. When the RE-
SET# pin is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state ma-
chine to reading array data. The operation that was in-
terrupted should be reinitiated once the device is
ready to accept another command sequence, to en-
sure data integrity.
ICC2 in the DC Characteristics table represents the ac-
tive current specification for the write mode. The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system
may check the status of the operation by reading the
status bits on DQ7–DQ0. Standard read cycle timings
and ICC read specifications apply. Refer to “Write Op-
eration Status” for more information, and to “AC Char-
acteristics” for timing diagrams.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS 0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is held
at VIL but not within VSS 0.3 V, the standby current will
be greater.
Standby Mode
When the system is not reading or writing to the de-
vice, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
10
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
If RESET# is asserted during a program or erase op-
rithms). The system can read data tRH after the RE-
SET# pin returns to VIH.
eration, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The sys-
tem can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
within a time of tREADY (not during Embedded Algo-
Refer to the AC Characteristics tables for RESET# pa-
rameters and to Figure 14 for the timing diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high im-
pedance state.
Table 2. Am29LV800DT Top Boot Block Sector Addresses
Address Range (in hexadecimal)
Sector Size
(Kbytes/
(x8)
(x16)
Sector
SA0
A18
0
A17
0
A16
0
A15
0
A14
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
A13
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
A12
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
Kwords)
Address Range
Address Range
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
32/16
8/4
00000h–0FFFFh
10000h–1FFFFh
20000h–2FFFFh
30000h–3FFFFh
40000h–4FFFFh
50000h–5FFFFh
60000h–6FFFFh
70000h–7FFFFh
80000h–8FFFFh
90000h–9FFFFh
A0000h–AFFFFh
B0000h–BFFFFh
C0000h–CFFFFh
D0000h–DFFFFh
E0000h–EFFFFh
F0000h–F7FFFh
F8000h–F9FFFh
FA000h–FBFFFh
FC000h–FFFFFh
00000h–07FFFh
08000h–0FFFFh
10000h–17FFFh
18000h–1FFFFh
20000h–27FFFh
28000h–2FFFFh
30000h–37FFFh
38000h–3FFFFh
40000h–47FFFh
48000h–4FFFFh
50000h–57FFFh
58000h–5FFFFh
60000h–67FFFh
68000h–6FFFFh
70000h–77FFFh
78000h–7BFFFh
7C000h–7CFFFh
7D000h–7DFFFh
7E000h–7FFFFh
SA1
0
0
0
1
SA2
0
0
1
0
SA3
0
0
1
1
SA4
0
1
0
0
SA5
0
1
0
1
SA6
0
1
1
0
SA7
0
1
1
1
SA8
1
0
0
0
SA9
1
0
0
1
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
1
0
1
0
1
0
1
1
1
1
0
0
1
1
0
1
1
1
1
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
1
8/4
1
1
1
1
1
1
X
16/8
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
11
D A T A S H E E T
Table 3. Am29LV800DB Bottom Boot Block Sector Addresses
Address Range (in hexadecimal)
Sector Size
(Kbytes/
(x8)
(x16)
Sector
SA0
A18
0
A17
0
A16
0
A15
0
A14
0
A13
0
A12
X
0
Kwords)
Address Range
Address Range
16/8
8/4
00000h–03FFFh
04000h–05FFFh
06000h–07FFFh
08000h–0FFFFh
10000h–1FFFFh
20000h–2FFFFh
30000h–3FFFFh
40000h–4FFFFh
50000h–5FFFFh
60000h–6FFFFh
70000h–7FFFFh
80000h–8FFFFh
90000h–9FFFFh
A0000h–AFFFFh
B0000h–BFFFFh
C0000h–CFFFFh
D0000h–DFFFFh
E0000h–EFFFFh
F0000h–FFFFFh
00000h–01FFFh
02000h–02FFFh
03000h–03FFFh
04000h–07FFFh
08000h–0FFFFh
10000h–17FFFh
18000h–1FFFFh
20000h–27FFFh
28000h–2FFFFh
30000h–37FFFh
38000h–3FFFFh
40000h–47FFFh
48000h–4FFFFh
50000h–57FFFh
58000h–5FFFFh
60000h–67FFFh
68000h–6FFFFh
70000h–77FFFh
78000h–7FFFFh
SA1
0
0
0
0
0
1
SA2
0
0
0
0
0
1
1
8/4
SA3
0
0
0
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
32/16
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
SA4
0
0
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
SA5
0
0
1
0
SA6
0
0
1
1
SA7
0
1
0
0
SA8
0
1
0
1
SA9
0
1
1
0
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
0
1
1
1
1
0
0
0
1
0
0
1
1
0
1
0
1
0
1
1
1
1
0
0
1
1
0
1
1
1
1
0
1
1
1
1
Note for Tables 2 and 3: Address range is A18:A-1 in byte mode and A18:A0 in word mode. See “Word/Byte Configuration”
section.
Table 4. In addition, when verifying sector protection,
Autoselect Mode
the sector address must appear on the appropriate
The autoselect mode provides manufacturer and de-
highest order address bits (see Tables 2 and 3). Table
vice identification, and sector protection verification,
4 shows the remaining address bits that are don’t
through identifier codes output on DQ7–DQ0. This
care. When all necessary bits have been set as re-
mode is primarily intended for programming equip-
quired, the programming equipment may then read the
ment to automatically match a device to be pro-
corresponding identifier code on DQ7–DQ0.
grammed with its corresponding programming
algorithm. However, the autoselect codes can also be
accessed in-system through the command register.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 5. This method
does not require VID. See “Command Definitions” for
details on using the autoselect mode.
When using programming equipment, the autoselect
mode requires VID (11.5 V to 12.5 V) on address pin
A9. Address pins A6, A1, and A0 must be as shown in
12
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
Table 4. Am29LV800D Autoselect Codes (High Voltage Method)
A18 A11
to to
Mode CE# OE# WE# A12 A10 A9
A8
to
A7
A5
to
A2
DQ8
to
A0 DQ15
DQ7
to
DQ0
Description
A6
A1
Manufacturer ID: AMD
L
L
L
L
H
H
X
X
VID
X
X
L
X
X
L
L
X
01h
Device ID:
Am29LV800B
(Top Boot Block)
Word
Byte
Word
Byte
22h
DAh
X
X
VID
L
L
L
L
H
L
L
L
L
L
L
H
H
H
X
22h
X
DAh
5Bh
5Bh
Device ID:
Am29LV800B
(Bottom Boot Block)
X
X
X
VID
X
X
X
X
H
L
01h
(protected)
X
X
Sector Protection Verification
L
L
H
SA
VID
L
H
00h
(unprotected)
Legend: L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
Sector Protection/Unprotection
Temporary Sector Unprotect
The hardware sector protection feature disables both
program and erase operations in any sector. The hard-
ware sector unprotection feature re-enables both pro-
gram and erase operations in previously protected
sectors.
This feature allows temporary unprotection of previ-
ously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RE-
SET# pin to VID. During this mode, formerly protected
sectors can be programmed or erased by selecting the
sector addresses. Once VID is removed from the RE-
SET# pin, all the previously protected sectors are
protected again. Figure 1 shows the algorithm, and
Figure 22 shows the timing diagrams, for this feature.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
START
It is possible to determine whether a sector is pro-
tected or unprotected. See “Autoselect Mode” for de-
tails.
RESET# = VID
(Note 1)
Sector Protection/unprotection can be implemented
via two methods.
Perform Erase or
The primary method requires VID on the RESET# pin
only, and can be implemented either in-system or via
programming equipment. Figure 2 shows the algo-
rithms and Figure 23 shows the timing diagram. This
method uses standard microprocessor bus cycle tim-
ing. For sector unprotect, all unprotected sectors must
first be protected prior to the first sector unprotect
write cycle.
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
The alternate method intended only for programming
equipment requires VID on address pin A9 and OE#.
This method is compatible with programmer routines
written for earlier 3.0 volt-only AMD flash devices.
Publication number 20536 contains further details;
contact an AMD representative to request a copy.
Notes:
1. All protected sectors unprotected.
2. All previously protected sectors are protected once
again.
Figure 1. Temporary Sector Unprotect Operation
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
13
D A T A S H E E T
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
PLSCNT = 1
PLSCNT = 1
RESET# = VID
RESET# = VID
Wait 1 ms
Wait 1 ms
unprotect address
No
First Write
Cycle = 60h?
No
First Write
Cycle = 60h?
Temporary Sector
Unprotect Mode
Temporary Sector
Unprotect Mode
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Wait 150 µs
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
Reset
PLSCNT = 1
Increment
PLSCNT
Wait 15 ms
A1 = 1, A0 = 0
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Read from
sector address
with A6 = 1,
Data = 01h?
Yes
A1 = 1, A0 = 0
No
Yes
Set up
next sector
address
Yes
No
PLSCNT
= 1000?
Protect another
sector?
Data = 00h?
Yes
Device failed
No
Yes
Remove VID
from RESET#
No
Last sector
verified?
Device failed
Write reset
command
Yes
Remove VID
from RESET#
Sector Unprotect
Algorithm
Sector Protect
Algorithm
Sector Protect
complete
Write reset
command
Sector Unprotect
complete
Figure 2. In-System Sector Protect/
Sector Unprotect Algorithms
14
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
vide the proper signals to the control pins to prevent
unintentional writes when VCC is greater than VLKO
Hardware Data Protection
.
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 5 for com-
mand definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during VCC power-up
and power-down transitions, or from system noise.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not ac-
cept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets. Subsequent writes are ignored
until VCC is greater than VLKO. The system must pro-
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automati-
cally reset to reading array data on power-up.
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. Table 5 defines the valid register command
sequences. Writing incorrect address and data val-
ues or writing them in the improper sequence resets
the device to reading array data.
See also “Requirements for Reading Array Data” in
the “Device Bus Operations” section for more informa-
tion. The Read Operations table provides the read pa-
rameters, and Figure 13 shows the timing diagram.
Reset Command
Writing the reset command to the device resets the
device to reading array data. Address bits are don’t
care for this command.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the
“AC Characteristics” section.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ig-
nores reset commands until the operation is complete.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or Em-
bedded Erase algorithm.
The reset command may be written between the se-
quence cycles in a program command sequence be-
fore programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the
operation is complete.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The sys-
tem can read array data using the standard read tim-
ings, except that if it reads at an address within
erase-suspended sectors, the device outputs status
data. After completing a programming operation in the
Erase Suspend mode, the system may once again
read array data with the same exception. See “Erase
Suspend/Erase Resume Commands” for more infor-
mation on this mode.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to reading array data (also
applies to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to read-
ing array data (also applies during Erase Suspend).
The system must issue the reset command to re-en-
able the device for reading array data if DQ5 goes
high, or while in the autoselect mode. See the “Reset
Command” section, next.
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and devices
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
15
D A T A S H E E T
codes, and determine whether or not a sector is pro-
Any commands written to the device during the Em-
bedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program-
ming operation. The program command sequence
should be reinitiated once the device has reset to
reading array data, to ensure data integrity.
tected. Table 5 shows the address and data require-
ments. This method is an alternative to that shown in
Table 4, which is intended for PROM programmers
and requires VID on address bit A9.
The autoselect command sequence is initiated by writ-
ing two unlock cycles, followed by the autoselect com-
mand. The device then enters the autoselect mode,
and the system may read at any address any number
of times, without initiating another command se-
quence.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from a “0” back to a “1”. Attempting to do so may
halt the operation and set DQ5 to “1”, or cause the
Data# Polling algorithm to indicate the operation was
successful. However, a succeeding read will show that
the data is still “0”. Only erase operations can convert
a “0” to a “1”.
A read cycle at address XX00h retrieves the manufac-
turer code. A read cycle at address XX01h in word
mode (or 02h in byte mode) returns the device code. A
read cycle containing a sector address (SA) and the
address 02h in word mode (or 04h in byte mode) re-
turns 01h if that sector is protected, or 00h if it is un-
protected. Refer to Tables 2 and 3 for valid sector
addresses.
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to pro-
gram bytes or words to the device faster than using the
standard program command sequence. The unlock
bypass command sequence is initiated by first writing
two unlock cycles. This is followed by a third write
cycle containing the unlock bypass command, 20h.
The device then enters the unlock bypass mode. A
two-cycle unlock bypass program command sequence
is all that is required to program in this mode. The first
cycle in this sequence contains the unlock bypass pro-
gram command, A0h; the second cycle contains the
program address and data. Additional data is pro-
grammed in the same manner. This mode dispenses
with the initial two unlock cycles required in the stan-
dard program command sequence, resulting in faster
total programming time. Table 5 shows the require-
ments for the command sequence.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Word/Byte Program Command Sequence
The system may program the device by word or byte,
depending on the state of the BYTE# pin. Program-
ming is a four-bus-cycle operation. The program com-
mand sequence is initiated by writing two unlock write
cycles, followed by the program set-up command. The
program address and data are written next, which in
turn initiate the Embedded Program algorithm. The
system is not required to provide further controls or
timings. The device automatically provides internally
generated program pulses and verifies the pro-
grammed cell margin. Table 5 shows the address and
data requirements for the byte program command se-
quence.
During the unlock bypass mode, only the Unlock By-
pass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset com-
mand sequence. The first cycle must contain the data
90h; the second cycle the data 00h. Addresses are
don’t care for both cycles. The device then returns to
reading array data.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and ad-
dresses are no longer latched. The system can deter-
mine the status of the program operation by using
DQ7, DQ6, or RY/BY#. See “Write Operation Status”
for information on these status bits.
Figure 3 illustrates the algorithm for the program oper-
ation. See the Erase/Program Operations table in “AC
Characteristics” for parameters, and to Figure 17 for
timing diagrams.
16
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
vice has returned to reading array data, to ensure data
integrity.
START
The system can determine the status of the erase op-
eration by using DQ7, DQ6, DQ2, or RY/BY#. See
“Write Operation Status” for information on these sta-
tus bits. When the Embedded Erase algorithm is com-
plete, the device returns to reading array data and
addresses are no longer latched.
Write Program
Command Sequence
Figure 4 illustrates the algorithm for the erase opera-
tion. See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and to Figure 18 for
timing diagrams.
Data Poll
from System
Embedded
Program
algorithm
in progress
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two ad-
ditional unlock write cycles are then followed by the
address of the sector to be erased, and the sector
erase command. Table 5 shows the address and data
requirements for the sector erase command se-
quence.
Verify Data?
Yes
No
No
Increment Address
Last Address?
Yes
The device does not require the system to preprogram
the memory prior to erase. The Embedded Erase al-
gorithm automatically programs and verifies the sector
for an all zero data pattern prior to electrical erase.
The system is not required to provide any controls or
timings during these operations.
Programming
Completed
After the command sequence is written, a sector erase
time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sec-
tors may be from one sector to all sectors. The time
between these additional cycles must be less than 50
µs, otherwise the last address and command might
not be accepted, and erasure may begin. It is recom-
mended that processor interrupts be disabled during
this time to ensure all commands are accepted. The
interrupts can be re-enabled after the last Sector
Erase command is written. If the time between addi-
tional sector erase commands can be assumed to be
less than 50 µs, the system need not monitor DQ3.
Any command other than Sector Erase or Erase
Suspend during the time-out period resets the de-
vice to reading array data. The system must rewrite
the command sequence and any additional sector ad-
dresses and commands.
Note: See Table 5 for program command sequence.
Figure 3. Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algo-
rithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
trols or timings during these operations. Table 5 shows
the address and data requirements for the chip erase
command sequence.
The system can monitor DQ3 to determine if the sec-
tor erase timer has timed out. (See the “DQ3: Sector
Erase Timer” section.) The time-out begins from the
rising edge of the final WE# pulse in the command se-
quence.
Any commands written to the chip during the Embed-
ded Erase algorithm are ignored. Note that a hard-
ware reset during the chip erase operation
immediately terminates the operation. The Chip Erase
command sequence should be reinitiated once the de-
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
17
D A T A S H E E T
Once the sector erase operation has begun, only the
After an erase-suspended program operation is com-
plete, the system can once again read array data
within non-suspended sectors. The system can deter-
mine the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard pro-
gram operation. See “Write Operation Status” for more
information.
Erase Suspend command is valid. All other com-
mands are ignored. Note that a hardware reset dur-
ing the sector erase operation immediately terminates
the operation. The Sector Erase command sequence
should be reinitiated once the device has returned to
reading array data, to ensure data integrity.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses
are no longer latched. The system can determine the
status of the erase operation by using DQ7, DQ6,
DQ2, or RY/BY#. Refer to “Write Operation Status” for
information on these status bits.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
Figure 4 illustrates the algorithm for the erase opera-
tion. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
Figure 18 for timing diagrams.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase sus-
pend mode and continue the sector erase operation.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written after
the device has resumed erasing.
Erase Suspend/Erase Resume
Commands
The Erase Suspend command allows the system to in-
terrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sector
erase operation, including the 50 µs time-out period
during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algo-
rithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the
time-out period and suspends the erase operation. Ad-
dresses are “don’t-cares” when writing the Erase Sus-
pend command.
START
Write Erase
Command Sequence
Data Poll
When the Erase Suspend command is written during a
sector erase operation, the device requires a maxi-
mum of 20 µs to suspend the erase operation. How-
ever, when the Erase Suspend command is written
during the sector erase time-out, the device immedi-
ately terminates the time-out period and suspends the
erase operation.
from System
Embedded
Erase
algorithm
in progress
No
Data = FFh?
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Normal
read and write timings and command definitions apply.
Reading at any address within erase-suspended sec-
tors produces status data on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
See “Write Operation Status” for information on these
status bits.
Yes
Erasure Completed
Notes:
1. See Table 5 for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 4. Erase Operation
18
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
Table 5. Am29LV800D Command Definitions
Bus Cycles (Notes 2-5)
Command
Sequence
(Note 1)
First
Second
Third
Addr
Fourth
Data Addr Data
Fifth
Sixth
Addr Data Addr Data
Addr Data Addr Data
Read (Note 6)
Reset (Note 7)
1
1
RA
XXX
555
AAA
555
AAA
555
AAA
RD
F0
Word
Byte
Word
Byte
Word
Byte
2AA
555
2AA
555
2AA
555
555
AAA
555
4
4
4
AA
AA
AA
55
55
55
90
90
90
X00
01
Manufacturer ID
X01
X02
X01
X02
22DA
DA
Device ID,
Top Boot Block
AAA
555
225B
5B
Device ID,
Bottom Boot Block
AAA
XX00
XX01
00
(SA)
X02
Word
Byte
555
2AA
555
555
Sector Protect Verify
(Note 9)
4
AA
55
90
(SA)
X04
AAA
AAA
01
Word
Byte
555
AAA
555
2AA
555
2AA
555
AAA
555
Program
4
AA
AA
55
55
A0
20
PA
PD
Word
Unlock Bypass
3
Byte
555
PA
AAA
AAA
XXX
A0
90
PD
00
Unlock Bypass Program (Note 10)
Unlock Bypass Reset (Note 11)
2
2
XXX
2AA
555
2AA
555
XXX
555
Word
555
AAA
555
555
AAA
555
2AA
555
2AA
555
555
Chip Erase
Byte
6
AA
AA
55
55
80
80
AA
AA
55
55
10
30
AAA
555
AAA
Word
Sector Erase
Byte
6
SA
AAA
XXX
XXX
AAA
AAA
Erase Suspend (Note 12)
Erase Resume (Note 13)
1
1
B0
30
Legend:
X = Don’t care
PD = Data to be programmed at location PA. Data latches on
the rising edge of WE# or CE# pulse, whichever happens
first.
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
SA = Address of the sector to be verified (in autoselect
mode) or erased. Address bits A18–A12 uniquely select any
sector.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE#
pulse, whichever happens later.
Notes:
1. See Table 1 for description of bus operations.
9. The data is 00h for an unprotected sector and 01h for a
protected sector. See “Autoselect Command Sequence” for
more information.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus
cycles are write operations.
10. The Unlock Bypass command is required prior to the
Unlock Bypass Program command.
4. Data bits DQ15–DQ8 are don’t cares for unlock and
command cycles.
11. The Unlock Bypass Reset command is required to return to
reading array data when the device is in the unlock bypass
mode.
5. Address bits A18–A11 are don’t cares for unlock and
command cycles, unless PA or SA required.
12. The system may read and program in non-erasing sectors,
or enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during a
sector erase operation.
6. No unlock or command cycles required when reading array
data.
7. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status data).
13. The Erase Resume command is valid only during the
Erase Suspend mode.
8. The fourth cycle of the autoselect command sequence is a
read cycle.
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
19
D A T A S H E E T
WRITE OPERATION STATUS
The device provides several bits to determine the sta-
tus of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7,
and RY/BY#. Table 6 and the following subsections
describe the functions of these bits. DQ7, RY/BY#,
and DQ6 each offer a method for determining whether
a program or erase operation is complete or in
progress. These three bits are discussed first.
Table 6 shows the outputs for Data# Polling on DQ7.
Figure 5 shows the Data# Polling algorithm.
START
DQ7: Data# Polling
Read DQ7–DQ0
Addr = VA
The Data# Polling bit, DQ7, indicates to the host sys-
tem whether an Embedded Algorithm is in progress or
completed, or whether the device is in Erase Suspend.
Data# Polling is valid after the rising edge of the final
WE# pulse in the program or erase command se-
quence.
Yes
DQ7 = Data?
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum pro-
grammed to DQ7. This DQ7 status also applies to pro-
gramming during Erase Suspend. When the
Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for
approximately 1 µs, then the device returns to reading
array data.
No
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
This is analogous to the complement/true datum out-
put described for the Embedded Program algorithm:
the erase function changes all the bits in a sector to
“1”; prior to this, the device outputs the “complement,”
or “0.” The system must provide an address within any
of the sectors selected for erasure to read valid status
information on DQ7.
Yes
DQ7 = Data?
No
PASS
FAIL
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data# Poll-
ing on DQ7 is active for approximately 100 µs, then the
device returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the se-
lected sectors that are protected.
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within
any sector selected for erasure. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at
DQ7–DQ0 on the following read cycles. This is be-
cause DQ7 may change asynchronously with
DQ0–DQ6 while Output Enable (OE#) is asserted low.
Figure 19, Data# Polling Timings (During
Embedded Algorithms), in the “AC Characteristics”
section illustrates this.
Figure 5. Data# Polling Algorithm
20
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
DQ6 also toggles during the erase-suspend-program
RY/BY#: Ready/Busy#
mode, and stops toggling once the Embedded Pro-
gram algorithm is complete.
The RY/BY# is a dedicated, open-drain output pin that
indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, sev-
eral RY/BY# pins can be tied together in parallel with a
Table 6 shows the outputs for Toggle Bit I on DQ6. Fig-
ure 6 shows the toggle bit algorithm. Figure 20 in the
“AC Characteristics” section shows the toggle bit tim-
ing diagrams. Figure 21 shows the differences be-
tween DQ2 and DQ6 in graphical form. See also the
subsection on “DQ2: Toggle Bit II”.
pull-up resistor to VCC
.
If the output is low (Busy), the device is actively eras-
ing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is ready to read array data (includ-
ing during the Erase Suspend mode), or is in the
standby mode.
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indi-
cates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
Table 6 shows the outputs for RY/BY#. Figures 13, 14,
17 and 18 shows RY/BY# for read, reset, program,
and erase operations, respectively.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for era-
sure. (The system may use either OE# or CE# to con-
trol the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-sus-
pended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for era-
sure. Thus, both status bits are required for sector and
mode information. Refer to Table 6 to compare outputs
for DQ2 and DQ6.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or com-
plete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any ad-
dress, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
During an Embedded Program or Erase algorithm op-
eration, successive read cycles to any address cause
DQ6 to toggle. (The system may use either OE# or
CE# to control the read cycles.) When the operation is
complete, DQ6 stops toggling.
Figure 6 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the “DQ6: Toggle Bit I” subsection.
Figure 20 shows the toggle bit timing diagram. Figure
21 shows the differences between DQ2 and DQ6 in
graphical form.
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 tog-
gles for approximately 100 µs, then returns to reading
array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are pro-
tected.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 6 for the following discussion. When-
ever the system initially begins reading toggle bit sta-
tus, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically,
the system would note and store the value of the tog-
gle bit after the first read. After the second read, the
system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device
has completed the program or erase operation. The
system can read array data on DQ7–DQ0 on the fol-
lowing read cycle.
The system can use DQ6 and DQ2 together to deter-
mine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing
(that is, the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase Sus-
pend mode, DQ6 stops toggling. However, the system
must also use DQ2 to determine which sectors are
erasing or erase-suspended. Alternatively, the system
can use DQ7 (see the subsection on “DQ7: Data#
Polling”).
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the sys-
tem also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is tog-
gling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading
array data.
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
21
D A T A S H E E T
program or erase operation. If it is still toggling, the de-
status of DQ3 prior to and following each subsequent
sector erase command. If DQ3 is high on the second
status check, the last command might not have been
accepted. Table 6 shows the outputs for DQ3.
vice did not completed the operation successfully, and
the system must write the reset command to return to
reading array data.
The remaining scenario is that the system initially de-
termines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor
the toggle bit and DQ5 through successive read cy-
cles, determining the status as described in the previ-
ous paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to de-
termine the status of the operation (top of Figure 6).
START
Read DQ7–DQ0
(Note 1)
DQ5: Exceeded Timing Limits
Read DQ7–DQ0
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1.” This is a failure
condition that indicates the program or erase cycle
was not successfully completed.
No
Toggle Bit
= Toggle?
The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously
programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the operation
has exceeded the timing limits, DQ5 produces a “1.”
Yes
No
DQ5 = 1?
Yes
Under both these conditions, the system must issue
the reset command to return the device to reading
array data.
(Notes
1, 2)
Read DQ7–DQ0
Twice
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If addi-
tional sectors are selected for erasure, the entire
time-out also applies after each additional sector
erase command. When the time-out is complete, DQ3
switches from “0” to “1.” The system may ignore DQ3
if the system can guarantee that the time between
additional sector erase commands will always be less
than 50 µs. See also the “Sector Erase Command Se-
quence” section.
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
After the sector erase command sequence is written,
the system should read the status on DQ7 (Data# Poll-
ing) or DQ6 (Toggle Bit I) to ensure the device has ac-
cepted the command sequence, and then read DQ3. If
DQ3 is “1”, the internally controlled erase cycle has
begun; all further commands (other than Erase Sus-
pend) are ignored until the erase operation is com-
plete. If DQ3 is “0”, the device will accept additional
sector erase commands. To ensure the command has
been accepted, the system software should check the
Notes:
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5
changes to “1”. See text.
Figure 6. Toggle Bit Algorithm
22
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
Table 6. Write Operation Status
DQ7
DQ5
DQ2
Operation
(Note 2)
DQ6
(Note 1)
DQ3
N/A
1
(Note 2)
RY/BY#
Embedded Program Algorithm
Embedded Erase Algorithm
DQ7#
0
Toggle
Toggle
0
0
No toggle
Toggle
0
0
Standard
Mode
Reading within Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Erase
Suspend
Mode
Reading within Non-Erase
Suspended Sector
Data
Data
Data
0
Data
N/A
Data
N/A
1
0
Erase-Suspend-Program
DQ7#
Toggle
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5: Exceeded Timing Limits” for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
23
D A T A S H E E T
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
20 ns
20 ns
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . . –65°C to +85°C
+0.8 V
Voltage with Respect to Ground
–0.5 V
–2.0 V
V
CC (Note 1). . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
A9, OE#, and
RESET# (Note 2). . . . . . . . . . . .–0.5 V to +12.5 V
20 ns
All other pins (Note 1) . . . . . .–0.5 V to VCC+0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
During voltage transitions, input or I/O pins may
undershoot VSS to –2.0 V for periods of up to 20 ns. See
Figure 7. Maximum DC voltage on input or I/O pins is
Figure 7. Maximum Negative Overshoot
Waveform
VCC +0.5 V. During voltage transitions, input or I/O pins
may overshoot to VCC +2.0 V for periods up to 20 ns. See
Figure 8.
2. Minimum DC input voltage on pins A9, OE#, and RESET#
is –0.5 V. During voltage transitions, A9, OE#, and RESET#
may undershoot VSS to –2.0 V for periods of up to 20 ns.
See Figure 7. Maximum DC input voltage on pin A9 is
+12.5 V which may overshoot to 14.0 V for periods up to 20
ns.
20 ns
VCC
+2.0 V
VCC
+0.5 V
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater than
one second.
2.0 V
20 ns
20 ns
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
Figure 8. Maximum Positive Overshoot
Waveform
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
V
V
V
CC Supply Voltages
CC for regulated voltage range . . . . .+3.0 V to +3.6 V
CC for full voltage range . . . . . . . . . .+2.7 V to +3.6 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
24
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Test Conditions
VIN = VSS to VCC
Min
Typ
Max
±1.0
35
Unit
µA
,
ILI
Input Load Current
VCC = VCC max
ILIT
ILO
A9 Input Load Current
Output Leakage Current
VCC = VCC max; A9 = 12.5 V
µA
VOUT = VSS to VCC
,
±1.0
µA
VCC = VCC max
5 MHz
1 MHz
5 MHz
1 MHz
7
2
7
2
15
4
CE# = VIL, OE# = VIH,
Byte Mode
VCC Active Read Current
(Notes 1, 2)
ICC1
mA
mA
15
4
CE# = VIL, OE# = VIH,
Word Mode
VCC Active Write Current
(Notes 2, 3, 5)
ICC2
CE# = VIL, OE# = VIH
15
30
ICC3
ICC4
VCC Standby Current (Note 2)
VCC Reset Current (Note 2)
CE#, RESET# = VCC±0.3 V
RESET# = VSS ± 0.3 V
0.2
0.2
5
5
µA
µA
Automatic Sleep Mode
(Notes 2, 4)
VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V
ICC5
0.2
5
µA
VIL
VIH
Input Low Voltage
Input High Voltage
–0.5
0.8
V
V
0.7 x VCC
VCC + 0.3
Voltage for Autoselect and
Temporary Sector Unprotect
VID
VCC = 3.3 V
11.5
12.5
0.45
V
VOL
VOH1
VOH2
Output Low Voltage
IOL = 4.0 mA, VCC = VCC min
V
V
I
OH = –2.0 mA, VCC = VCC min
0.85 VCC
VCC–0.4
Output High Voltage
IOH = –100 µA, VCC = VCC min
Low VCC Lock-Out Voltage
(Note 4)
VLKO
2.3
2.5
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical VCC is 3.0 V.
2. Maximum ICC specifications are tested with VCC = VCCmax
.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns.
5. Not 100% tested.
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
25
D A T A S H E E T
DC CHARACTERISTICS (Continued)
Zero Power Flash
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 9. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
10
8
3.6 V
2.7 V
6
4
2
0
1
2
3
4
5
Frequency in MHz
Note: T = 25 °C
Figure 10. Typical ICC1 vs. Frequency
26
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
TEST CONDITIONS
Table 7. Test Specifications
-90,
3.3
Test Condition
-70
-120
Unit
2.7 kΩ
Output Load
1 TTL gate
Device
Under
Test
Output Load Capacitance, CL
(including jig capacitance)
30
100
5
pF
C
L
6.2 kΩ
Input Rise and Fall Times
Input Pulse Levels
ns
V
0.0–3.0
Input timing measurement
reference levels
1.5
1.5
V
V
Output timing measurement
reference levels
Note: Diodes are IN3064 or equivalent
Figure 11. Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Does Not Apply
Changing, State Unknown
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
1.5 V
Input
Measurement Level
Output
Figure 12. Input Waveforms and
Measurement Levels
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
27
D A T A S H E E T
AC CHARACTERISTICS
Read Operations
Parameter
Speed Options
JEDEC
Std
Description
Read Cycle Time (Note 1)
Test Setup
-70
-90
-120 Unit
tAVAV
tRC
Min
70
90
120
ns
CE# = VIL
OE# = VIL
tAVQV
tACC Address to Output Delay
Max
70
90
120
ns
tELQV
tGLQV
tEHQZ
tGHQZ
tCE
tOE
tDF
tDF
Chip Enable to Output Delay
OE# = VIL
Max
Max
Max
Max
Min
70
30
25
25
90
35
30
30
0
120
50
ns
ns
ns
ns
ns
Output Enable to Output Delay
Chip Enable to Output High Z (Note 1)
Output Enable to Output High Z (Note 1)
30
30
Read
Output Enable
Hold Time (Note 1)
tOEH
Toggle and
Data# Polling
Min
Min
10
0
ns
ns
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First (Note 1)
tAXQX
tOH
Notes:
1. Not 100% tested.
2. See Figure 11 and Table 7 for test specifications.
tRC
Addresses Stable
tACC
Addresses
CE#
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0 V
Figure 13. Read Operations Timings
28
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
Test Setup
Max
All Speed Options
Unit
RESET# Pin Low (During Embedded
Algorithms) to Read or Write (See Note)
tREADY
20
µs
RESET# Pin Low (NOT During Embedded
Algorithms) to Read or Write (See Note)
tREADY
Max
500
ns
tRP
tRH
RESET# Pulse Width
Min
Min
Min
Min
500
50
20
0
ns
ns
µs
ns
RESET# High Time Before Read (See Note)
tRPD RESET# Low to Standby Mode
tRB RY/BY# Recovery Time
Note: Not 100% tested.
RY/BY#
CE#, OE#
RESET#
tRH
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Figure 14. RESET# Timings
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
29
D A T A S H E E T
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
Speed Options
JEDEC
Std
tELFL/ ELFH
tFLQZ
Description
-70
-90
5
-120
Unit
ns
t
CE# to BYTE# Switching Low or High
BYTE# Switching Low to Output HIGH Z
BYTE# Switching High to Output Active
Max
Max
Min
25
70
30
90
30
ns
tFHQV
120
ns
CE#
OE#
BYTE#
tELFL
Data Output
(DQ0–DQ14)
Data Output
(DQ0–DQ7)
BYTE#
Switching
DQ0–DQ14
from word
to byte
Address
Input
DQ15
Output
mode
DQ15/A-1
tFLQZ
tELFH
BYTE#
BYTE#
Switching
from byte
to word
Data Output
(DQ0–DQ7)
Data Output
(DQ0–DQ14)
DQ0–DQ14
DQ15/A-1
mode
Address
Input
DQ15
Output
tFHQV
Figure 15. BYTE# Timings for Read Operations
CE#
The falling edge of the last WE# signal
WE#
BYTE#
tSET
(tAS
)
tHOLD (tAH
)
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 16. BYTE# Timings for Write Operations
30
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
AC CHARACTERISTICS
Erase/Program Operations
Parameter
Speed Options
JEDEC
tAVAV
Std
tWC
tAS
Description
Write Cycle Time (Note 1)
-70
-90
90
0
-120
Unit
ns
Min
Min
Min
Min
Min
Min
70
120
tAVWL
tWLAX
tDVWH
tWHDX
Address Setup Time
Address Hold Time
Data Setup Time
ns
tAH
45
35
45
45
0
50
50
ns
tDS
ns
tDH
tOES
Data Hold Time
ns
Output Enable Setup Time
0
ns
Read Recovery Time Before Write
(OE# High to WE# Low)
tGHWL
tGHWL
Min
0
ns
tELWL
tWHEH
tWLWH
tWHWL
tCS
tCH
CE# Setup Time
Min
Min
Min
Min
Typ
Typ
Typ
Min
Min
Max
0
0
ns
ns
ns
ns
CE# Hold Time
tWP
Write Pulse Width
Write Pulse Width High
35
35
30
8
50
tWPH
Byte
tWHWH1
tWHWH2
tWHWH1 Programming Operation (Note 2)
µs
Word
16
1
tWHWH2 Sector Erase Operation (Note 2)
sec
µs
tVCS
tRB
VCC Setup Time (Note 1)
50
0
Recovery Time from RY/BY#
ns
tBUSY Program/Erase Valid to RY/BY# Delay
90
ns
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
31
D A T A S H E E T
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
Read Status Data (last two cycles)
tAS
PA
tWC
Addresses
555h
PA
PA
tAH
CE#
OE#
tCH
tWHWH1
tWP
WE#
Data
tWPH
tCS
tDS
tDH
PD
DOUT
A0h
Status
tBUSY
tRB
RY/BY#
VCC
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 17. Program Operation Timings
32
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
Read Status Data
VA
tAS
SA
tWC
VA
Addresses
CE#
2AAh
555h for chip erase
tAH
tCH
OE#
tWP
WE#
tWPH
tWHWH2
tCS
tDS
tDH
In
Data
Complete
55h
30h
Progress
10 for Chip Erase
tBUSY
tRB
RY/BY#
VCC
tVCS
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
2. Illustration shows device in word mode.
Figure 18. Chip/Sector Erase Operation Timings
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
33
D A T A S H E E T
AC CHARACTERISTICS
tRC
VA
Addresses
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
WE#
tOEH
tDF
tOH
High Z
High Z
DQ7
Valid Data
Complement
Complement
Status Data
True
DQ0–DQ6
Valid Data
Status Data
True
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 19. Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses
CE#
VA
tACC
tCE
VA
VA
VA
tCH
tOE
OE#
WE#
tOEH
tDF
tOH
High Z
DQ6/DQ2
RY/BY#
Valid Status
(first read)
Valid Status
Valid Status
Valid Data
(second read)
(stops toggling)
tBUSY
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
Figure 20. Toggle Bit Timings (During Embedded Algorithms)
34
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
AC CHARACTERISTICS
Enter
Embedded
Erasing
Erase
Suspend
Enter Erase
Suspend Program
Erase
Resume
Erase
Erase Suspend
Read
Erase
Suspend
Program
Erase
Complete
WE#
Erase
Erase Suspend
Read
DQ6
DQ2
Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
Figure 21. DQ2 vs. DQ6
Temporary Sector Unprotect
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
Min
500
ns
RESET# Setup Time for Temporary Sector
Unprotect
tRSP
4
µs
Note: Not 100% tested.
12 V
RESET#
0 or 3 V
0 or 3 V
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
RY/BY#
Figure 22. Temporary Sector Unprotect
Timing Diagram
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
35
D A T A S H E E T
AC CHARACTERISTICS
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Sector Protect/Unprotect
60h 60h
Valid*
Valid*
Status
Verify
40h
Data
Sector Protect: 150 µs
Sector Unprotect: 15 ms
1 µs
CE#
WE#
OE#
* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 23. Sector Protect/Unprotect
Timing Diagram
36
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
AC CHARACTERISTICS
Alternate CE# Controlled
Erase/Program Operations
Parameter
Speed Options
JEDEC
tAVAV
Std
tWC
tAS
Description
-70
-90
90
0
-120
Unit
ns
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Min
Min
Min
Min
Min
Min
70
120
tAVEL
ns
tELAX
tAH
45
35
45
45
0
50
50
ns
tDVEH
tEHDX
tDS
ns
tDH
tOES
Data Hold Time
ns
Output Enable Setup Time
0
ns
Read Recovery Time Before Write
(OE# High to WE# Low)
tGHEL
tGHEL
Min
0
ns
tWLEL
tEHWH
tELEH
tEHEL
tWS
tWH
tCP
WE# Setup Time
WE# Hold Time
Min
Min
Min
Min
Typ
Typ
Typ
0
0
ns
ns
ns
ns
CE# Pulse Width
CE# Pulse Width High
35
35
30
8
50
tCPH
Byte
Programming Operation
(Note 2)
tWHWH1
tWHWH2
Notes:
tWHWH1
tWHWH2
µs
Word
16
1
Sector Erase Operation (Note 2)
sec
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
37
D A T A S H E E T
AC CHARACTERISTICS
555 for program
PA for program
2AA for erase
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tWH
tAS
tAH
WE#
OE#
tGHEL
tWHWH1 or 2
tCP
CE#
Data
tWS
tCPH
tDS
tBUSY
tDH
DQ7#
DOUT
tRH
A0 for program
55 for erase
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to the
device.
2. Figure indicates the last two bus cycles of command sequence.
3. Word mode address used as an example.
Figure 24. Alternate CE# Controlled Write Operation Timings
38
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
s
Comments
Sector Erase Time
Chip Erase Time
1
10
Excludes 00h programming
prior to erasure
14
8
s
Byte Programming Time
Word Programming Time
300
360
25
µs
µs
s
16
8.4
5.8
Excludes system level overhead
(Note 5)
Byte Mode
Word Mode
Chip Programming Time
(Note 3)
17
s
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 5
for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
+100 mA
VCC Current
–100 mA
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP AND SO PIN CAPACITANCE
Parameter
Symbol
Parameter Description
Input Capacitance
Test Setup
VIN = 0
Typ
6
Max
7.5
12
Unit
pF
CIN
COUT
CIN2
Output Capacitance
Control Pin Capacitance
VOUT = 0
VIN = 0
8.5
7.5
pF
9
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Test Conditions
Min
10
Unit
Years
Years
150°C
125°C
Minimum Pattern Data Retention Time
20
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
39
D A T A S H E E T
PHYSICAL DIMENSIONS*
TS 048—48-Pin Standard TSOP
Dwg rev AA; 10/99
* For reference only. BSC is an ANSI standard for Basic
Space Centering.
40
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
PHYSICAL DIMENSIONS
FBB 048—48-Ball Fine-Pitch Ball Grid Array (FBGA) 6 x 9 mm
Dwg rev AF; 10/99
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
41
D A T A S H E E T
PHYSICAL DIMENSIONS
VBK 048 - 48 Ball Fine-Pitch Ball Grid Array (FBGA) 6.15 x 8.15 mm
0.10 (4X)
D1
A
D
6
5
4
3
2
1
7
e
SE
E1
E
H
G
F
E
D
C
B
A
INDEX MARK
10
6
B
A1 CORNER
PIN A1
CORNER
7
fb
SD
f 0.08 M
C
TOP VIEW
f 0.15 M C A B
BOTTOM VIEW
0.10 C
0.08 C
A2
A
SEATING PLANE
SIDE VIEW
C
A1
NOTES:
PACKAGE
JEDEC
VBK 048
N/A
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
6.15 mm x 8.15 mm NOM
PACKAGE
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
SYMBOL
MIN
---
NOM
MAX
1.00 OVERALL THICKNESS
--- BALL HEIGHT
NOTE
4.
e
REPRESENTS THE SOLDER BALL GRID PITCH.
A
A1
A2
D
---
---
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
0.18
0.62
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
---
0.76 BODY THICKNESS
BODY SIZE
8.15 BSC.
6.15 BSC.
5.60 BSC.
4.00 BSC.
8
N IS THE TOTAL NUMBER OF SOLDER BALLS.
E
BODY SIZE
6
7
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
D1
E1
BALL FOOTPRINT
BALL FOOTPRINT
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
MD
ME
N
ROW MATRIX SIZE D DIRECTION
ROW MATRIX SIZE E DIRECTION
TOTAL BALL COUNT
6
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
48
fb
0.33
---
0.43 BALL DIAMETER
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
e
0.80 BSC.
0.40 BSC.
---
BALL PITCH
SD / SE
SOLDER BALL PLACEMENT
DEPOPULATED SOLDER BALLS
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
3338 \ 16-038.25b
42
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
D A T A S H E E T
PHYSICAL DIMENSIONS
SO 044—44-Pin Small Outline Package
Dwg rev AC; 10/99
Am29LV800D_00_A7 December 4, 2006
Am29LV800D
43
D A T A S H E E T
REVISION SUMMARY
Revision A (January 19, 2004)
Revision A+3 (June 23, 2004)
Changed data sheet status to Advance Information to
indicate new 0.23 µm process technology. The base
device part number has changed from Am29LV800B
Global change
Changed all Helvetica/Times Roman fonts to Gill Sans
For AMD or Verdana.
to Am29LV800D. Specifications for ICC1, tWHWH1
,
tWHWH2 have changed. Extended temperature is no
longer available. All other specifications in the data
sheet remain unchanged. Deleted references to KGD
option in Connection Diagrams section. (This docu-
ment was formerly released as publication 21490, revi-
sion H.)
“Physical Dimensions” on page 45
Added VBK048 Package Drawing.
“Ordering Information” on page 10
Added “WC =...” to Standard Products table.
Added “WCC, WCI, WCD, WCF” to Valid combinations
table.
Revision A+1 (February 3, 2004)
Added Colophon.
Distinctive Characteristics, General Description,
Ordering Information
Revision A+4 (January 21, 2005)
Added migration statement.
Deleted references to KGD option. (This document
was formerly released as publication 21490, revision
H1.)
Revision A5 (February 16, 2006)
Revision A+2 (April 2, 2004)
Updated migration statement on cover page and first
page of data sheet.
General Description
Removed Reverse TSOP material.
Updated trademarks.
Removed unlock bypass section.
Global
Converted datasheet to Preliminary.
Revision A6 (May 5, 2006)
Ordering Information
Updated migration/obsolescence statement on cover
page and first page of data sheet.
Added Pb-Free packages and updated Valid Combina-
tions tables to include changes.
Revision A7 (December 4, 2006)
Absolute Maximum Rating
AC Characteristics
Changed ambient with power applied from 125°C to
85°C.
Erase and Program Operations table: Changed tBUSY
to a maximum specification.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limita-
tion, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as con-
templated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion Inc. will not be liable
to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating
conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign
Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior au-
thorization by the respective government entity will be required for export of those products.
Trademarks
Copyright © 2004–2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trade-
marks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are
for identification purposes only and may be trademarks of their respective companies.
Copyright © 2006 Spansion Inc. All Rights Reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof are
trademarks of Spansion Inc. Other names are for informational purposes only and may be trademarks of their respective owners.
44
Am29LV800D
Am29LV800D_00_A7 December 4, 2006
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