S29CD016G0JDGH014 [SPANSION]
Flash, 512KX32, 67ns, 7.44 X 4.46 MM, DIE-76;
| 型号： | S29CD016G0JDGH014 |
| 厂家： | 
SPANSION |
| 描述： | Flash, 512KX32, 67ns, 7.44 X 4.46 MM, DIE-76 |
| 文件： | 总15页 (文件大小：379K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S29CD016G Known Good Die
16-Megabit (512 K x 32-Bit) CMOS 2.5-Volt-only
Burst Mode, Dual Boot, Simultaneous Read/Write
Flash Memory
SUPPLEMENT
This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates.
Availability of this document is retained for reference and historical purposes only.
Distinctive Characteristics
20 year data retention typical
Versatile I/O™ control
Architecture Advantages
Simultaneous Read/Write operations
— Device generates data output voltages and tolerates
data input voltages as determined by the voltage on
— Data can be continuously read from the 75% bank
while executing erase/program functions in the 25%
bank
the V pin
IO
— Zero latency between read and write operations
— Two bank architecture: 75%/25%
— 1.65-V to 2.75-V compatible I/O signals
— 3.6-V tolerant I/O signals
User-Defined x32 Data Bus
Dual Boot Block
Software Features
Persistent Sector Protection
— Top and bottom boot in the same device
— A command sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
Flexible sector architecture
— Eight 8 Kbytes, thirty 64 Kbytes, and eight 8 Kbytes
sectors
sector (requires only V levels)
CC
Manufactured on 0.17-µm process technology
Secured Silicon Sector (256 Bytes)
Password Sector Protection
— A sophisticated sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector using a user-definable 64-bit password
— Factory locked: Secured Silicon contains device
information such as manufacturing lot and test
information (also known as Electronic Marking).
Programmable Burst interface
Supports Common Flash Interface (CFI)
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
Data# Polling and toggle bits
— Interface to any high performance processor
— Modes of Burst Read Operation:
— Linear Burst: 4 double words and 8 double words
with wrap around
Single power supply operation
— Provides a software method of detecting program or
erase operation completion
— Optimized for 2.5- to 2.75-Volt read, erase, and
program operations
Hardware Features
Compatibility with JEDEC standards (JC42.4)
— Software compatible with single-power supply Flash
— Backward-compatible with Spansion Am29LV and
Am29F, and Fujitsu MBM29LV and MBM29F flash
memories
Program Suspend/Resume & Erase Suspend/
Resume
— Suspends program or erase operations to allow
reading, programming, or erasing in same bank
Hardware Reset (RESET#), Ready/Busy#
(RY/BY#), and Write Protect (WP#) inputs
ACC input
Performance Characteristics
High performance read access
— Initial/random access times as fast as 64 ns
— Burst access time as fast as 10 ns
— Accelerates programming time for higher throughput
during system production
Ultra low power consumption
— Burst Mode Read: 90 mA @ 56 MHz max
— Program/Erase: 50 mA max
— Standby mode: CMOS: 150 µA max
100,000 write cycles per sector typical
Publication Number S29CD016G_KGD Revision A Amendment 2 Issue Date February 23, 2009
S U P P L E M E N T
Table of Contents
Distinctive Characteristics . . . . . . . . . . . . . . . . . . . .1
General Description . . . . . . . . . . . . . . . . . . . . . . . . 3
S29CD016G Features .............................................................................3
Electrical Specifications ......................................................................... 4
Product Selector Guide. . . . . . . . . . . . . . . . . . . . . . 5
Die Photograph . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Die Pad Locations . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pad Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Pads Relative To Die Center ................................................ 6
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 7
KGD Ordering Quantities Increments ................................... 7
Packaging Information . . . . . . . . . . . . . . . . . . . . . . 8
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . 10
Maximum Negative Overshoot Waveform ............................ 10
Maximum Positive Overshoot Waveform.............................. 10
Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . . 11
Physical Specifications . . . . . . . . . . . . . . . . . . . . . . 11
Manufacturing Information . . . . . . . . . . . . . . . . . . 11
Special Handling Instructions . . . . . . . . . . . . . . . . 11
Processing ................................................................................................. 11
Storage ....................................................................................................... 11
DC characteristics for KGD Devices at 145° C . . . 12
CMOS Compatible ............................................................................... 12
Terms and Conditions of Sale for Spansion
Surftape Packaging .................................................................................. 8
Waffle Pack Packaging ........................................................................... 8
Product Test Flow . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Non-Volatile Memory Die . . . . . . . . . . . . . . . . . . . 13
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . . 15
Spansion KGD Product Test Flow..........................................
9
2
S29CD016G Known Good Die
S29CD016G_KGD_A2 February 23, 2009
S U P P L E M E N T
General Description
The S29CD016G in Known Good Die (KGD) form is an 16-Mbit, 2.5-Volt-only
Flash memory. Spansion defines KGD as standard product in die form, tested for
functionality and speed.
S29CD016G Features
The S29CD016G is a 16-Megabit, 2.5-Volt-only single power supply burst mode
flash memory device. The device is configured for 524,288 double words. The de-
vice can also be programmed in standard EPROM programmers.
To eliminate bus contention, each device has separate chip enable (CE#), write
enable (WE#) and output enable (OE#) controls. Additional control inputs are re-
quired for synchronous burst operations: Load Burst Address Valid (ADV#), and
Clock (CLK).
Each device requires only a single 2.5- or 2.6-Volt power supply (2.5-V to
2.75-V) for both read and write functions. A 12.0-Volt V is not required for pro-
PP
gram or erase operations, although an acceleration pin is available if faster
programming performance is required.
The device is entirely command set compatible with the JEDEC single-power-
supply Flash standard.
The Unlock Bypass mode facilitates faster programming times by requiring only
two write cycles to program data instead of four.
The Simultaneous Read/Write architecture provides simultaneous operation
by dividing the memory space into two banks. The device can begin programming
or erasing in the small bank, and then simultaneously read from the large bank,
with zero latency.
The device provides a 256-byte Secured Silicon Sector that contains Electronic
Marking Information for easy device traceability..
In addition, the device features several levels of sector protection, which can dis-
able both the program and erase operations in certain sectors or sector groups:
Persistent Sector Protection is a command sector protection method that re-
places the old 12-Volt controlled protection method; Password Sector
Protection is a highly sophisticated protection method that requires a password
before changes to certain sectors or sector groups are permitted; WP# Hard-
ware Protection prevents program or erase in the two outermost 8-Kbytes
sectors of the larger bank.
The device defaults to the Persistent Sector Protection mode. The customer must
then choose if the Standard or Password Protection method is most desirable. The
WP# Hardware Protection feature is always available, independent of the other
protection method chosen.
The Versatile I/O™ (V
) feature allows the output voltage generated on the
CCQ
device to be determined based on the V level. This feature allows this device to
IO
operate in the 1.8-Volt I/O environment, driving and receiving signals to and from
other 1.8-Volt devices on the same bus. In addition, inputs and I/Os that are
driven externally are capable of handling 3.6 Volts.
The host system can detect whether a program or erase operation is complete by
observing the RY/BY# pin, by reading the DQ7 (Data# Polling), or DQ6 (toggle)
status bits. After a program or erase cycle has been completed, the device is
ready to read array data or accept another command.
3
S29CD016G Known Good Die
S29CD016G_KGD_A2 February 23, 2009
S U P P L E M E N T
The sector erase architecture allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low V detector that automat-
CC
ically inhibits write operations during power transitions. The password and
software sector protection feature disables both program and erase opera-
tions in any combination of sectors of memory. This can be achieved in-system
at V level.
CC
The Program/Erase Suspend/Erase Resume feature enables the user to put
erase on hold for any period of time to read data from, or program data to, any
sector that is not selected for erasure. True background erase can thus be
achieved.
The hardware RESET# pin terminates any operation in progress and resets the
internal state machine to reading array data.
The device offers two power-saving features. When addresses have been stable
for a specified amount of time, the device enters the automatic sleep mode.
The system can also place the device into the standby mode. Power consump-
tion is greatly reduced in both these modes.
AMD’s Flash technology combines years of Flash memory manufacturing experi-
ence to produce the highest levels of quality, reliability and cost effectiveness.
The device electrically erases all bits within a sector simultaneously via
Fowler-Nordheim tunneling. The data is programmed using hot electron injection.
Electrical Specifications
Refer to the S29CD016G data sheet, publication number S29CD-G, for full elec-
trical specifications on the S29CD016G in KGD form.
February 23, 2009 S29CD016G_KGD_A2
S29CD016G Known Good Die
4
S U P P L E M E N T
Product Selector Guide
Part Number
S29CD016G KGD
Synchronous/Burst or Asynchronous
Standard Voltage Range: V
= 2.5 – 2.75 V
CC
Speed Option (Clock Rate)
56 MHz
64
40 MHz
67
Max Initial/Asynchronous Access Time, ns (t
Max Burst Access Delay (ns)
)
ACC
10
17
Max Clock Rate (MHz)
56
40
Max CE# Access, ns (t
)
69
71
CE
Max OE# Access, ns (t
)
20
28
OE
Die Photograph
Die Pad Locations
70
6
5
4
3
2
1
76 75 74
73
72 71
7
8
69
68
9
10
67
66
65
11
12
13
14
64
63
62
61
60
15
16
17
18
59
58
19
20
57
56
21
22
55
54
53
52
Spansion logo location
23
24
25
26
51
50
27
28
29
49
48
47
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
5
S29CD016G Known Good Die
S29CD016G_KGD_A2 February 23, 2009
S U P P L E M E N T
Pad Description
Table 1. Pads Relative To Die Center
Pad Center (mils)
Pad Center (µm)
Pad Center (mils)
Pad Center (µm)
Pad
Signal
Pad
Signal
X
Y
X
Y
X
Y
X
Y
1
CE#
OE#
137.593
137.593
137.593
137.593
137.823
137.593
128.262
122.8
4.11
3494.869
3494.869
3494.869
3494.869
3500.712
3494.869
3257.864
3119.125
2835.721
2696.983
2493.417
2260.402
2051.24
104.405
287.185
469.965
652.745
1048.914
1501.304
1912.141
1912.141
1912.141
1912.141
1912.141
1912.141
1912.141
1912.141
1912.141
1912.141
1912.141
1912.141
1912.141
1912.141
1912.141
1912.141
1912.141
1912.141
1912.141
1912.141
1926.03
1926.03
1926.03
1926.03
1584.695
1401.915
1219.135
1036.355
853.575
670.795
492.898
357.048
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
V
-137.624
-137.624
-137.624
-137.624
-137.624
-137.624
-137.624
-137.624
-132.322
-125.504
-120.144
-105.22
-99.758
-88.6
7.053
-3495.639
-3495.639
-3495.639
-3495.639
-3495.639
-3495.639
179.151
-189.525
-372.305
-555.085
-737.865
-920.645
CC
2
11.306
18.503
25.699
41.296
59.106
75.281
75.281
75.281
75.281
75.281
75.281
75.281
75.281
75.281
75.281
75.281
75.281
75.281
75.281
75.281
75.281
75.281
75.281
75.281
75.281
75.828
75.828
75.828
75.828
62.39
A9
-7.462
3
WE#
A10
A11
A12
A13
A14
A15
A16
A17
A18
DQ0
DQ1
DQ2
DQ3
-14.658
-21.854
-29.05
4
WP#
5
IND/WAIT#
MCH
6
-36.246
-43.442
-50.638
-75.784
-75.784
-75.784
-75.237
-75.237
-75.237
-75.237
-75.237
-75.237
-75.237
-75.237
-75.237
-75.237
-75.237
-75.237
-75.237
-75.237
-75.237
-75.237
-75.237
-75.237
-75.237
-75.237
-62.45
7
DQ16
DQ17
DQ18
DQ19
-3495.639 -1103.425
-3495.639 -1286.205
-3360.967 -1924.918
-3187.801 -1924.918
-3051.647 -1924.918
8
9
111.643
106.18
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
V
98.166
CCQ
V
88.992
-2672.587
-2533.85
-2250.446
-2111.708
-1908.141
-1675.125
-1465.964
-1327.226
-1043.822
-905.084
1451.515
1590.252
1873.656
2012.395
2221.556
2454.572
2658.138
2796.876
3080.28
-1911.03
-1911.03
-1911.03
-1911.03
-1911.03
-1911.03
-1911.03
-1911.03
-1911.03
-1911.03
-1911.03
-1911.03
-1911.03
-1911.03
-1911.03
-1911.03
-1911.03
-1911.03
-1911.03
-1911.03
-1586.234
-1405.487
-1207.507
-824.315
-435.119
-299.269
-73.492
SS
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
80.757
75.295
1912.502
1629.098
1490.36
64.138
-83.138
-75.124
-65.95
58.676
V
CCQ
-33.786
-39.248
-50.406
-55.868
-64.103
-73.276
-81.291
-86.753
-97.911
-103.373
-117.607
-124.425
-129.785
-136.603
-137.624
-137.624
-137.624
-137.624
-137.624
-137.624
-138.446
-137.624
-858.164
-996.901
-1280.306
-1419.043
-1628.205
-1861.221
-2064.787
-2203.525
-2486.929
-2625.667
-2987.228
-3160.394
-3296.548
-3469.713
-3495.639
-3495.639
-3495.639
-3495.639
-3495.639
-3495.639
-3516.539
-3495.639
V
SS
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
-57.715
-52.253
-41.095
-35.633
57.146
V
CCQ
V
SS
DQ28
DQ29
DQ30
DQ31
MCH
A0
62.608
73.766
79.228
V
87.463
CCQ
V
96.637
SS
DQ12
DQ13
DQ14
DQ15
104.651
110.113
121.271
126.733
137.593
137.593
137.593
137.823
137.593
137.593
137.593
A1
A2
A3
3219.018
3494.869
3494.869
3494.869
3500.712
3494.869
3494.869
3494.869
A4
55.194
47.997
40.801
33.605
26.409
19.405
14.057
V
CCQ
A5
RESET#
CLK#
-55.334
-47.54
A6
A7
RY/BY#
ADV#
-32.453
-17.131
-11.782
-2.893
A8
V
V
SS
SS
CC
ACC
V
Note: The coordinates above are relative to the die center and can be used to operate wire bonding equipment.
February 23, 2009 S29CD016G_KGD_A2
S29CD016G Known Good Die
6
S U P P L E M E N T
Ordering Information
The order number (Valid Combination) is formed by the following:
S29CD016G
0J 0 0
D
E
I
4
PACKING TYPE
4
7
=
=
Surf Tape TGR
Waffe Pack
ADDITIONAL ORDERING OPTION (CHARACTER 15)
Mask Revision
0
1
2
=
=
=
A
A1 with Autoselect Device ID (7E, 36, 01/00)
A1 with Autoselect Device ID (7E, 08, 01/00)
ADDITIONAL ORDERING OPTION (CHARACTER 16)
Top or Bottom Boot Option
0
1
=
=
Top Boot
Bottom Boot
TEMPERATURE RANGE
I
N
H
=
=
=
Industrial (–40
Extended (–40
Hot (–40 C to +145
°
C to +85
C to +125
C)
°
C)
C)
°
°
°
°
DIE THICKNESS
G
= 500 µm
PACKAGE TYPE
D
= Die
CLOCK FREQUENCY
0J
0M
=
=
40 MHz
56 MHz
DEVICE NUMBER/DESCRIPTION
S29CD016G
16-Megabit (512K x 32-Bit) CMOS 2.5-Volt-only Burst Mode,
Dual Boot, Simultaneous Read/Write Flash Memory
Manufactured on 170-nm floating gate technology
OPN Valid Combinations
S29CD016G
OJ, OM
D
G
I, N, H
00, 01
4, 7
Valid Combinations
Valid Combinations list the configurations that are planned to be supported in volume for
this device. Consult your local sales office to confirm availability of specific valid combina-
tions and to check on newly released combinations.
7
S29CD016G Known Good Die
S29CD016G_KGD_A2 February 23, 2009
S U P P L E M E N T
Packaging Information
Surftape Packaging
Direction of Feed
Orientation
relative to leading
edge of tape and
reel
Spansion logo location
Waffle Pack Packaging
Orientation relative to
top left corner of
Waffle Pack
Spansion logo location
cavity plate
February 23, 2009 S29CD016G_KGD_A2
S29CD016G Known Good Die
8
S U P P L E M E N T
Product Test Flow
Figure 1 provides an overview of Spansion’s Known Good Die test flow. For more
detailed information, refer to the S29CD016G product qualification database.
Spansion implements quality assurance procedures throughout the product test
flow. These QA procedures also allow Spansion to produce KGD products without
requiring or implementing burn-in. In addition, an off-line Quality Monitoring Pro-
gram (QMP) further guarantees Spansion quality standards are met on Known
Good Die products.
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 1
Data Retention
Bake
24 hours at 250° C
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 2
Wafer Sort 3
DC Parameters
Functionality
Programmability
Erasability
High Temperature
Speed
Incoming Inspection
Wafer Saw
Die Separation
100% Visual Inspection
Die Pack
Packaging for Shipment
Shipment
Figure 1. Spansion KGD Product Test Flow
9
S29CD016G Known Good Die
S29CD016G_KGD_A2 February 23, 2009
S U P P L E M E N T
Absolute Maximum Ratings
Storage Temperature, Plastic Packages. . . . . . . . . . . . . . . –65° C to +150° C
Ambient Temperature with Power Applied . . . . . . . . . . . . . –65° C to +145° C
V
, V (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to + 3.0 V
IO
CC
ACC, A9, OE#, and RESET# (Note 2) . . . . . . . . . . . . . . . . .–0.5 V to +13.0 V
Address, Data, Control Signals
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 3.60 V
All other pins (Note 1). . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +3.60 V
Output Short Circuit Current (Note 3). . . . . . . . . . . . . . . . . . . . . . . . 200 mA
20 ns
20 ns
+0.8 V
–0.5 V
–0.7 V
20 ns
Figure 2. Maximum Negative Overshoot Waveform
20 ns
VCC+ 2.0 V
V
CC+0.5 V
2.0 V
20 ns
20 ns
Figure 3. Maximum Positive Overshoot Waveform
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input at I/O pins may overshoot VSS
to –0.7 V for periods of up to 20 ns. Maximum DC voltage on output and I/O pins is 3.6 V. During voltage transitions
output pins may overshoot to VCC + 2.0 V for periods up to 20 ns.
2. Minimum DC input voltage on pins ACC, A9, OE#, and RESET# is -0.5 V. During voltage transitions, A9, OE#, and
RESET# may overshoot VSS to –0.7 V for periods of up to 20 ns. Maximum DC input voltage on pin A9 and OE# is
+13.0 V which may overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater
than one second.
4. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at these or any other conditions above those indicated in the
operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions
for extended periods may affect device reliability.
February 23, 2009 S29CD016G_KGD_A2
S29CD016G Known Good Die
10
S U P P L E M E N T
Operating Ranges
Ambient Temperature (T ), Industrial Range . . . . . . . . . . . . –40° C to +85° C
A
Ambient Temperature (T ), Extended Range . . . . . . . . . . . –40° C to +125° C
A
Ambient Temperature (T ), Hot Range . . . . . . . . . . . . . . . –40° C to +145° C
A
V
V
Supply Voltage for regulated voltage range. . . . . . . . . . . . 2.5 V to 2.75 V
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65 V to 2.75 V
CC
IO
Note: Operating ranges define those limits between which the functionality of the de-
vice is guaranteed.
Physical Specifications
Die dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.44 x 4.46 mm
Die Thickness . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 µm
Bond Pad Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86 x 86 µm
Pad Area Free of Passivation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6,724 µm2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .76
Bond Pad Metalization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Al/Cu
Passivation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SiN/SOG/SiN
Manufacturing Information
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . FASL, Japan
Test . . . . . . . . . . . . . . . . . . . . . . . . . . FASL, Japan and Penang, Malaysia
Manufacturing ID (Top Boot) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98P04AK
(Bottom Boot) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98P04ABK
Preparation for Shipment . . . . . . . . . . . . . . . . . . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CS59LS
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Special Handling Instructions
Processing
Do not expose KGD products to ultraviolet light or process them at temperatures
greater than 250° C. Failure to adhere to these handling instructions will result in
irreparable damage to the devices. For best yield, Spansion recommends assem-
bly in a Class 10K clean room with 30% to 60% relative humidity.
Storage
Store at a maximum temperature of 30° C in a nitrogen-purged cabinet or vac-
uum-sealed bag. Observe all standard ESD handling procedures.
11
S29CD016G Known Good Die
S29CD016G_KGD_A2 February 23, 2009
S U P P L E M E N T
DC characteristics
for KGD Devices at 145° C
CMOS Compatible
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
V
Active Asynchronous Read
CC
Current
I
I
CE# = V , OE# = V
1 MHz
5
10
mA
CC1
CC3
IL
IL
CE# = V , OE# = V
IL
IL,
V
Active Burst Read Current
56 MHz
60
15
90
mA
CC
8 Double-Word
V
= V
,
CCmax
CC
I
I
I
(Note 1)
(Note 1)
V
V
Standby Current (CMOS)
Reset Current
150
150
150
µ
µ
µ
A
A
A
CC5
CC
CC
CE# = V ± 0.3 V
CC
Reset = V
IL
CC7
CC8
V
V
= V ± 0.3 V,
CC
IH
IL
(Note 1) Automatic Sleep Mode Current
= V ± 0.3 V
SS
Notes:
1. Current maximum has been significantly increased (x27) from KGD Supplement Revision A, Amendment 1, dated
April 21, 2003.
2. The ICC current listed includes both the DC operating current and the frequency dependent component.
February 23, 2009 S29CD016G_KGD_A2
S29CD016G Known Good Die
12
S U P P L E M E N T
Terms and Conditions of Sale for Spansion Non-Volatile Memory Die
All transactions relating to unpackaged die under this agreement shall be subject
to Spansion’s standard terms and conditions of sale, or any revisions thereof,
which revisions Spansion reserves the right to make at any time and from time
to time. In the event of conflict between the provisions of Spansion’s standard
terms and conditions of sale and this agreement, the terms of this agreement
shall be controlling.
Spansion warrants its manufactured unpackaged die whether shipped to cus-
tomer in individual dice or wafer form (“Known Good Die,” “KGD”, “Die,” “Known
Good Wafer”, “KGW”, or Wafer(s)) will meet Spansion's published specifications
and against defective materials or workmanship for a period of one (1) year from
date of shipment.
This limited warranty does not extend beyond the first purchaser of said Die or
Wafer(s).
Buyer assumes full responsibility to ensure compliance with the appropriate han-
dling, assembly and processing of KGD or KGW (including but not limited to
proper Die preparation, Die attach, backgrinding, singulation, wire bonding and
related assembly and test activities), and compliance with all guidelines set forth
in Spansion's specifications for KGD or KGW, and Spansion assumes no respon-
sibility for environmental effects on KGD or KGW or for any activity of Buyer or a
third party that damages the Die or Wafer(s) due to improper use, abuse, negli-
gence, improper installation, improper backgrinding, improper singulation,
accident, loss, damage in transit, or unauthorized repair or alteration by a person
or entity other than Spansion (“Limited Warranty Exclusions”)
The liability of Spansion under this limited warranty is limited, at Spansion's op-
tion, solely to repair the Die or Wafer(s), to send replacement Die or Wafer(s), or
to make an appropriate credit adjustment or refund in an amount not to exceed
the original purchase price actually paid for the Die or Wafer(s) returned to Span-
sion, provided that: (a) Spansion is promptly notified by Buyer in writing during
the applicable warranty period of any defect or nonconformity in the Die or Wa-
fer(s); (b) Buyer obtains authorization from Spansion to return the defective Die
or Wafer(s); (c) the defective Die or Wafer(s) is returned to Spansion by Buyer
in accordance with Spansion's shipping instructions set forth below; and (d)
Buyer shows to Spansion's satisfaction that such alleged defect or nonconformity
actually exists and was not caused by any of the above-referenced Warranty Ex-
clusions. Buyer shall ship such defective Die or Wafer(s) to Spansion via
Spansion's carrier, collect. Risk of loss will transfer to Spansion when the defec-
tive Die or Wafer(s) is provided to Spansion's carrier. If Buyer fails to adhere to
these warranty returns guidelines, Buyer shall assume all risk of loss and shall
pay for all freight to Spansion's specified location. The aforementioned provisions
do not extend the original limited warranty period of any Die or Wafer(s) that has
either been replaced by Spansion.
THIS LIMITED WARRANTY IS EXPRESSED IN LIEU OF ALL OTHER WARRANTIES,
EXPRESSED OR IMPLIED, INCLUDING THE IMPLIED WARRANTY OF FITNESS FOR
A PARTICULAR PURPOSE, THE IMPLIED WARRANTY OF MERCHANTABILITY OR
NONINFRINGEMENT AND OF ALL OTHER OBLIGATIONS OR LIABILITIES ON
Spansion's PART, AND IT NEITHER ASSUMES NOR AUTHORIZES ANY OTHER PER-
SON TO ASSUME FOR Spansion ANY OTHER LIABILITIES. THE FOREGOING
CONSTITUTES THE BUYER'S SOLE AND EXCLUSIVE REMEDY FOR THE FURNISH-
ING OF DEFECTIVE OR NON CONFORMING KNOWN GOOD DIE OR KNOWN GOOD
13
S29CD016G Known Good Die
S29CD016G_KGD_A2 February 23, 2009
S U P P L E M E N T
WAFER(S) AND Spansion SHALL NOT IN ANY EVENT BE LIABLE FOR INCREASED
MANUFACTURING COSTS, DOWNTIME COSTS, DAMAGES RELATING TO BUYER'S
PROCUREMENT OF SUBSTITUTE DIE OR WAFER(S) (i.e., “COST OF COVER”),
LOSS OF PROFITS, REVENUES OR GOODWILL, LOSS OF USE OF ORDAMAGE TO
ANY ASSOCIATED EQUIPMENT, OR ANY OTHER INDIRECT, INCIDENTAL, SPECIAL
OR CONSEQUENTIAL DAMAGES BY REASON OF THE FACT THAT SUCH KNOWN
GOOD DIE OR KNOWN GOOD WAFER(S) SHALL HAVE BEEN DETERMINED TO BE
DEFECTIVE OR NON CONFORMING.
Buyer agrees that it will make no warranty representations to its customers which
exceed those given by Spansion to Buyer unless and until Buyer shall agree to
indemnify Spansion in writing for any claims which exceed Spansion's limited
warranty. Known Good Die or Known Good Wafer(s) are not designed or autho-
rized for use as components in life support appliances, devices or systems where
malfunction of the Die or Wafer(s) can reasonably be expected to result in a per-
sonal injury. Buyer's use of Known Good Die or Known Good Wafer(s) for use in
life support applications is at Buyer's own risk and Buyer agrees to fully indemnify
Spansion for any damages resulting in such use or sale.
Known Good Die or Known Good Wafer are not designed or authorized for use as
components in life support appliances, devices or systems where malfunction of
the die or wafer can reasonably be expected to result in a personal injury. Buyer's
use of Known Good Die or Known Good Wafer for use in life support applications
is at Buyer's own risk and Buyer agrees to fully indemnify Spansion for any dam-
ages resulting in such use or sale.
February 23, 2009 S29CD016G_KGD_A2
S29CD016G Known Good Die
14
S U P P L E M E N T
Revision Summary
Revision A0 (January 17, 2005)
Initial release.
Revision A1 (October 7, 2005)
Removed Secure Silicon Sector feature to provide electronic marking.
Corrected cycles per sector from 1 million to 100,000.
Removed Gel-Pak as a shipment offering.
Changed maximum negative overshoot from -2.0 to -.7 Volts in figure 2.
Changed operating range for hot temperture from 150° to 145° C.
Removed 750-μm die thickness option.
Removed emboss tape option.
In ordering information, corrected temperature range option for extended tem-
perature from E to N.
Revision A2 (February 23, 2009)
Global:
Added obsolescence information.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary
industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that
includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal
injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control,
medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and
artificial satellite). Please note that Spansion LLC will not be liable to you and/or any third party for any claims or damages arising in connection with above-
mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such
failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels
and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on ex-
port under the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the
prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a Spansion LLC product under development
by Spansion LLC. Spansion LLC reserves the right to change or discontinue work on any product without notice. The information in this document is provided
as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement
of third-party rights, or any other warranty, express, implied, or statutory. Spansion LLC assumes no liability for any damages of any kind arising out of the
use of the information in this document.
Copyright © 2005-2009 Spansion Inc. All rights reserved. Spansion® , the Spansion Logo, MirrorBit®, MirrorBit® Eclipse™, ORNAND™, ORNAND2™ , HD-
SIM™, EcoRAM™ and combinations thereof, are trademarks of Spansion LLC in the US and other countries. Other names used are for informational purposes
only and may be trademarks of their respective owners.
15
S29CD016G Known Good Die
S29CD016G_KGD_A2 February 23, 2009
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