S71NS032J80BJWRA0 [SPANSION]

Memory Circuit, 2MX16, CMOS, PBGA56, 9.20 X 8 MM, LEAD FREE, TFBGA-56;
S71NS032J80BJWRA0
型号: S71NS032J80BJWRA0
厂家: SPANSION    SPANSION
描述:

Memory Circuit, 2MX16, CMOS, PBGA56, 9.20 X 8 MM, LEAD FREE, TFBGA-56

静态存储器 内存集成电路
文件: 总9页 (文件大小:220K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
S71NS-J  
Stacked Multi-Chip Product (MCP)  
110 nm CMOS 1.8 Volt-only Simultaneous Read/Write,  
Burst Mode Multiplexed Flash Memory with pSRAM  
S71NS-J Cover Sheet  
Data Sheet (Advance Information)  
Notice to Readers: This document states the current technical specifications regarding the Spansion  
product(s) described herein. Each product described herein may be designated as Advance Information,  
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.  
Publication Number S71NS-J_00  
Revision 03  
Issue Date October 10, 2006  
D a t a S h e e t  
( A d v a n c e I n f o r m a t i o n )  
Notice On Data Sheet Designations  
Spansion Inc. issues data sheets with Advance Information or Preliminary designations to advise readers of  
product information or intended specifications throughout the product life cycle, including development,  
qualification, initial production, and full production. In all cases, however, readers are encouraged to verify  
that they have the latest information before finalizing their design. The following descriptions of Spansion data  
sheet designations are presented here to highlight their presence and definitions.  
Advance Information  
The Advance Information designation indicates that Spansion Inc. is developing one or more specific  
products, but has not committed any design to production. Information presented in a document with this  
designation is likely to change, and in some cases, development on the product may discontinue. Spansion  
Inc. therefore places the following conditions upon Advance Information content:  
“This document contains information on one or more products under development at Spansion Inc.  
The information is intended to help you evaluate this product. Do not design in this product without  
contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed  
product without notice.”  
Preliminary  
The Preliminary designation indicates that the product development has progressed such that a commitment  
to production has taken place. This designation covers several aspects of the product life cycle, including  
product qualification, initial production, and the subsequent phases in the manufacturing process that occur  
before full production is achieved. Changes to the technical specifications presented in a Preliminary  
document should be expected while keeping these aspects of production under consideration. Spansion  
places the following conditions upon Preliminary content:  
“This document states the current technical specifications regarding the Spansion product(s)  
described herein. The Preliminary status of this document indicates that product qualification has been  
completed, and that initial production has begun. Due to the phases of the manufacturing process that  
require maintaining efficiency and quality, this document may be revised by subsequent versions or  
modifications due to changes in technical specifications.”  
Combination  
Some data sheets contain a combination of products with different designations (Advance Information,  
Preliminary, or Full Production). This type of document distinguishes these products and their designations  
wherever necessary, typically on the first page, the ordering information page, and pages with the DC  
Characteristics table and the AC Erase and Program table (in the table notes). The disclaimer on the first  
page refers the reader to the notice on this page.  
Full Production (No Designation on Document)  
When a product has been in production for a period of time such that no changes or only nominal changes  
are expected, the Preliminary designation is removed from the data sheet. Nominal changes may include  
those affecting the number of ordering part numbers available, such as the addition or deletion of a speed  
option, temperature range, package type, or V range. Changes may also include those needed to clarify a  
IO  
description or to correct a typographical error or incorrect specification. Spansion Inc. applies the following  
conditions to documents in this category:  
“This document states the current technical specifications regarding the Spansion product(s)  
described herein. Spansion Inc. deems the products to have been in sufficient production volume such  
that subsequent versions of this document are not expected to change. However, typographical or  
specification corrections, or modifications to the valid combinations offered may occur.”  
Questions regarding these document designations may be directed to your local Spansion sales office.  
ii  
S71NS-J  
October 10, 2006 S71NS-J_00_03  
S71NS-J  
Stacked Multi-Chip Product (MCP)  
110 nm CMOS 1.8 Volt-only Simultaneous Read/Write,  
Burst Mode Multiplexed Flash Memory with pSRAM  
Data Sheet (Advance Information)  
Features  
„ Single 1.8 volt read, program and erase (1.7 to 1.95 V)  
„ Simultaneous Read/Write operation  
– Data can be continuously read from one bank while executing  
erase/program functions in other bank  
„ Multiplexed Data and Address for reduced  
I/O count  
– Zero latency between read and write operations  
– A15–A0 multiplexed as DQ15–DQ0  
„ Package  
– Addresses are latched by AVD# control input when CE# low  
– 56-ball Very Thin FBGA  
Product Selector Guide  
MCP  
Flash  
pSRAM  
16 Mb  
8 Mb  
pSRAM Type  
Mux pSRAM 2  
Mux pSRAM 1  
pSRAM Read  
Asynchronous only  
Asynchronous only  
OPN  
S71NS032JA0  
S71NS032J80  
S29NS032J  
S29NS032J  
S71NS032JA0BJWRT  
S71NS032J80BJWRA  
General Description  
The products covered by this document are listed in the table below  
Document  
S29NS-J  
Publication Identification Number  
S29NS-J_00  
muxpsram_06  
muxpsram_05  
8 Mb Multiplexed pSRAM Type 1  
16Mb Multiplexed pSRAM Type 2 (Asynchronous only)  
Publication Number S71NS-J_00  
Revision 03  
Issue Date October 10, 2006  
This document contains information on one or more products under development at Spansion LLC. The information is intended to help you evaluate this product. Do not design  
in this product without contacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed product without notice.  
D a t a S h e e t  
( A d v a n c e I n f o r m a t i o n )  
1. MCP Block Diagram  
VCC VCCQ  
RESET#  
ACC  
CE#  
Flash  
Memory  
OE#  
WE#  
CLK  
RDY  
AVD#  
A19-A16  
A20  
A/DQ15 – A/DQ0  
VSS VCC VSSQ VCCQ  
F-RDY/R-WAIT  
WAIT  
LB#  
pSRAM  
UB#  
CRE  
CS#  
VSS  
VSSQ  
Note:  
A19 is shared for S71NS032JA0, but flash only for S71NS032J80.  
2
S71NS-J  
S71NS-J_00_03 October 10, 2006  
D a t a S h e e t  
( A d v a n c e I n f o r m a t i o n )  
2. Connection Diagram  
Legend  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
A
B
C
D
E
F
NC  
NC  
No Connect  
Flash, pSRAM Shared  
NC  
RFU  
A21  
A16  
R-LB# R-UB#  
RFU  
A17  
NC  
Reserved for Future Use  
F-RDY/  
R-WAIT  
VSS  
A20  
CLK  
VCC  
WE# F-ACC  
A19  
RFU  
Flash Only  
VCCQ  
VSS  
AVD#  
RFU F-RST# F-WP# A-18  
F-CE# VSSQ  
pSRAM Only  
A/DQ7 A/DQ6 A/DQ13 A/DQ12 A/DQ3 A/DQ2 A/DQ9 A/DQ8  
OE#  
G
A/DQ15 A/DQ14 VSSQ A/DQ5 A/DQ4 A/DQ11 A/DQ10 VCCQ A/DQ1 A/DQ0  
H
J
NC  
RFU  
R-CE# R-CRE  
RFU  
NC  
K
NC  
NC  
MCP  
Flash-only Address  
Shared Address  
A19:A16  
ADQ15:ADQ0  
S71NS032JA0  
S71NS032J80  
A20  
A18:A16  
ADQ15:ADQ0  
A20-A19  
S71NS-J_00_03 October 10, 2006  
S71NS-J  
3
D a t a S h e e t  
( A d v a n c e I n f o r m a t i o n )  
3. Input/Output Descriptions  
Signal  
R-UB#  
Description  
Flash  
RAM  
X
pSRAM Upper Byte Control  
pSRAM Lower Byte Control  
Address Inputs  
R-LB#  
X
A21–A16  
X
X
X
ADQ15–ADQ0 Multiplexed Address/Data input/output  
X
R-CE#  
F-CE#  
OE#  
pSRAM Chip Select Input  
X
Flash Chip Enable Input. Asynchronous relative to CLK for the Burst mode.  
Output Enable Input. Asynchronous relative to CLK for the Burst mode.  
Write Enable Input.  
X
X
X
X
X
X
X
X
X
X
X
WE#  
V
V
Device Power Supply (1.7 V–1.95 V).  
CC  
SS  
Ground  
NC  
No Connect; not connected internally  
Ready output; indicates the status of the Burst read. VOL= data invalid. WAIT# pin of pSRAM is  
shared with Flash RDY pin for synchronous pSRAM.  
RDY  
X
X
Clock input. The first rising edge of CLK in conjunction with AVD# low latches address input and  
activates burst mode operation. After the initial word is output, subsequent rising edges of CLK  
increment the internal address counter. CLK should remain low during asynchronous access.  
CLK is present on MuxpSRAM Type 3, but not on MuxpSRAM Type 2. As a result, it is a shared  
signal on S71NS064JA0, but a flash-only signal on S71NS032J.  
CLK  
X
X
Address Valid input. Indicates to device that the valid address is present on the address inputs  
(address bits A15–A0 are multiplexed, address bits A22–A16 are address only).  
AVD#  
V
= for asynchronous mode, indicates valid address; for burst mode, causes starting address to  
X
X
IL  
be latched on rising edge of CLK.  
V
= device ignores address inputs  
IH  
F-RST#  
F-ACC  
R-CRE  
Hardware reset input. V = device resets and returns to reading array data  
IL  
X
X
At 12 V, accelerates programming; automatically places device in unlock bypass mode. At V  
,
IL  
disables program and erase functions. Should be at V for all other conditions.  
IH  
Command Register Enable of pSRAM  
I/O Power Supply (1.7 V to 1.95 V)  
I/O Ground  
X
X
X
V
V
X
X
CCQ  
SSQ  
4
S71NS-J  
S71NS-J_00_03 October 10, 2006  
D a t a S h e e t  
( A d v a n c e I n f o r m a t i o n )  
4. Ordering Information  
The order number (Valid Combination) is formed by the following:  
S71NS  
032  
J
A0  
BJ  
W
RT  
0
PACKING TYPE  
0 = Tray  
2 = 7-inch Tape and Reel  
3 = 13-inch Tape and Reel  
ADDITIONAL ORDERING OPTIONS  
See Valid Combinations Table  
TEMPERATURE RANGE  
W = Wireless (–25°C to +85°C)  
For Industrial (–40°C to +85°C), contact local sales office  
PACKAGE TYPE  
BJ = Very Thin Fine-Pitch BGA Lead (Pb)-Free LF35 Package  
pSRAM DENSITY  
A0 = 16 Megabit (1M x 16-Bit)  
FLASH PROCESS TECHNOLOGY  
J = 110 nm Floating Gate Technology  
FLASH DENSITY  
064 = 64 Megabit (4 M x 16-Bit)  
032 = 32 Megabit (2M x 16-Bit)  
DEVICE FAMILY  
S71NS = Stacked Multi-Chip Product,  
Simultaneous Read/Write, Burst Mode Flash Memory with Multiplexed I/O  
1.8-Volt Operation, Top Boot Sectors, and pSRAM  
Table 4.1 Valid Combinations  
Process  
Technology  
pSRAM  
Density  
Base OPN  
Density  
Package Type Temperature  
BJ  
Options  
RA  
Packing Type  
80  
A0  
S71NS  
032  
J
W
0, 2, 3  
RT  
S71NS-J_00_03 October 10, 2006  
S71NS-J  
5
D a t a S h e e t  
( A d v a n c e I n f o r m a t i o n )  
5. Physical Dimensions  
5.1  
NLB056—56-Ball Very Thin Fine Pitch Ball Grid Array (FBGA)  
9.2 x 8.0 mm Package  
D1  
A
D
eD  
0.10  
(2X)  
C
14  
13  
12  
11  
10  
9
SE  
7
8
7
6
5
4
3
E
B
E1  
eE  
2
1
K
J H G F E D C B A  
INDEX MARK  
9
PIN A1  
CORNER  
PIN A1  
CORNER  
7
SD  
0.10  
(2X)  
C
TOP VIEW  
BOTTOM VIEW  
0.20  
C
A2  
A
A1  
0.08  
C
C
SIDE VIEW  
6
56X  
b
0.15  
0.08  
M
M
C
C
A
B
NOTES:  
1. DIMENSIONING AND TOLERANCING METHODS PER  
ASME Y14.5M-1994.  
PACKAGE  
JEDEC  
NLB 056  
N/A  
2. ALL DIMENSIONS ARE IN MILLIMETERS.  
D x E  
9.20 mm x 8.00 mm  
PACKAGE  
3. BALL POSITION DESIGNATION PER JEP95, SECTION 4.3,  
SPP-010.  
SYMBOL  
MIN  
NOM  
---  
MAX  
NOTE  
4.  
e REPRESENTS THE SOLDER BALL GRID PITCH.  
A
A1  
---  
1.20  
---  
PROFILE  
5. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D"  
DIRECTION.  
0.20  
0.85  
---  
BALL HEIGHT  
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE  
"E" DIRECTION.  
A2  
---  
0.97  
BODY THICKNESS  
BODY SIZE  
D
9.20 BSC.  
8.00 BSC.  
4.50 BSC.  
6.50 BSC.  
10  
n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS  
FOR MATRIX SIZE MD X ME.  
E
BODY SIZE  
D1  
E1  
MATRIX FOOTPRINT  
MATRIX FOOTPRINT  
6
7
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL  
DIAMETER IN A PLANE PARALLEL TO DATUM C.  
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A  
AND B AND DEFINE THE POSITION OF THE CENTER SOLDER  
BALL IN THE OUTER ROW.  
MD  
ME  
n
MATRIX SIZE D DIRECTION  
MATRIX SIZE E DIRECTION  
BALL COUNT  
14  
56  
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE  
OUTER ROW SD OR SE = 0.000.  
Øb  
eE  
0.25  
0.30  
0.35  
BALL DIAMETER  
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE  
OUTER ROW, SD OR SE = e/2  
0.50 BSC.  
0.50 BSC  
BALL PITCH  
eD  
SD / SE  
BALL PITCH  
8. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED  
BALLS.  
0.25 BSC.  
SOLDER BALL PLACEMENT  
A2 ~ A13,B1 ~ B14  
DEPOPULATED SOLDER BALLS  
9
A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK  
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.  
C1,C2,C5,C6,C9,C10,C13,C14  
D1,D2,D13,D14,E1,E2,E13,E14,F1,F2,F13,F14  
G1,G2,G13,G14,H1,H2,H5,H6,H9,H10,H13,H14  
J1 ~ J14, K2 ~ K13  
10. OUTLINE AND DIMENSIONS PER CUSTOMER REQUIREMENT.  
3507\ 16-038.22 \ 7.14.5  
6
S71NS-J  
S71NS-J_00_03 October 10, 2006  
D a t a S h e e t  
( A d v a n c e I n f o r m a t i o n )  
6. Revision History  
6.1  
6.2  
Revision 01 (March 2, 2006)  
Initial release.  
Revision 02 (April 21, 2006)  
Added the S71NS032JA0  
Updated the MCP Block Diagram  
Updated the Connection Diagram notes  
Updated the Input/Output Descriptions  
6.3  
Revision 03 (October 10, 2006)  
Added the S71NS032J80  
Removed the S71NS064JA0  
Colophon  
The products described in this document are designed, developed and manufactured as contemplated for general use, including without  
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as  
contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the  
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,  
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for  
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to  
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor  
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design  
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal  
operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under  
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,  
the prior authorization by the respective government entity will be required for export of those products.  
Trademarks and Notice  
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under  
development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this  
document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose,  
merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any  
damages of any kind arising out of the use of the information in this document.  
Copyright © 2006 Spansion Inc. All Rights Reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, and combinations thereof are  
trademarks of Spansion Inc. Other names are for informational purposes only and may be trademarks of their respective owners.  
S71NS-J_00_03 October 10, 2006  
S71NS-J  
7

相关型号:

S71NS032J80BJWRA2

Memory Circuit, 2MX16, CMOS, PBGA56, 9.20 X 8 MM, LEAD FREE, TFBGA-56
SPANSION

S71NS032J80BJWRA3

Memory Circuit, 2MX16, CMOS, PBGA56, 9.20 X 8 MM, LEAD FREE, TFBGA-56
SPANSION

S71NS032JA0

Stacked Multi-Chip Product (MCP)
SPANSION

S71NS032JA0BJWRT

Stacked Multi-Chip Product (MCP)
SPANSION

S71NS032JA0BJWRT0

Stacked Multi-Chip Product (MCP)
SPANSION

S71NS032JA0BJWRT2

Stacked Multi-Chip Product (MCP)
SPANSION

S71NS032JA0BJWRT3

Stacked Multi-Chip Product (MCP)
SPANSION

S71NS064JA0BAW013

Memory Circuit, 4MX16, CMOS, PBGA44, 9.20 X 8 MM, LEAD FREE, FBGA-44
SPANSION

S71NS064JA0BAW023

Memory Circuit, 4MX16, CMOS, PBGA44, 9.20 X 8 MM, LEAD FREE, FBGA-44
SPANSION

S71NS064JA0BAW123

Memory Circuit, 4MX16, CMOS, PBGA44, 9.20 X 8 MM, LEAD FREE, FBGA-44
SPANSION

S71NS064JA0BAW203

Memory Circuit, 4MX16, CMOS, PBGA44, 9.20 X 8 MM, LEAD FREE, FBGA-44
SPANSION

S71NS064JA0BAW222

Memory Circuit, 4MX16, CMOS, PBGA44, 9.20 X 8 MM, LEAD FREE, FBGA-44
SPANSION