S71WS128PB0HH3RL3 [SPANSION]

Flash, 8MX16, 80ns, PBGA84, 11.60 X 8 MM, 1.2 MM HEIGHT, HALOGEN AND LEAD FREE, FBGA-84;
S71WS128PB0HH3RL3
型号: S71WS128PB0HH3RL3
厂家: SPANSION    SPANSION
描述:

Flash, 8MX16, 80ns, PBGA84, 11.60 X 8 MM, 1.2 MM HEIGHT, HALOGEN AND LEAD FREE, FBGA-84

静态存储器 内存集成电路
文件: 总11页 (文件大小:307K)
中文:  中文翻译
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S71WS-P based MCP Products  
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode  
Flash Memory with CellularRAM  
Data Sheet  
S71WS-P based MCP Products Cover Sheet  
Notice to Readers: This document states the current technical specifications regarding the Spansion  
product(s) described herein. Each product described herein may be designated as Advance Information,  
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.  
Publication Number S71WS-P_00  
Revision A  
Amendment 16  
Issue Date November 11, 2010  
D a t a S h e e t  
Notice On Data Sheet Designations  
Spansion Inc. issues data sheets with Advance Information or Preliminary designations to advise readers of  
product information or intended specifications throughout the product life cycle, including development,  
qualification, initial production, and full production. In all cases, however, readers are encouraged to verify  
that they have the latest information before finalizing their design. The following descriptions of Spansion data  
sheet designations are presented here to highlight their presence and definitions.  
Advance Information  
The Advance Information designation indicates that Spansion Inc. is developing one or more specific  
products, but has not committed any design to production. Information presented in a document with this  
designation is likely to change, and in some cases, development on the product may discontinue. Spansion  
Inc. therefore places the following conditions upon Advance Information content:  
“This document contains information on one or more products under development at Spansion Inc.  
The information is intended to help you evaluate this product. Do not design in this product without  
contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed  
product without notice.”  
Preliminary  
The Preliminary designation indicates that the product development has progressed such that a commitment  
to production has taken place. This designation covers several aspects of the product life cycle, including  
product qualification, initial production, and the subsequent phases in the manufacturing process that occur  
before full production is achieved. Changes to the technical specifications presented in a Preliminary  
document should be expected while keeping these aspects of production under consideration. Spansion  
places the following conditions upon Preliminary content:  
“This document states the current technical specifications regarding the Spansion product(s)  
described herein. The Preliminary status of this document indicates that product qualification has been  
completed, and that initial production has begun. Due to the phases of the manufacturing process that  
require maintaining efficiency and quality, this document may be revised by subsequent versions or  
modifications due to changes in technical specifications.”  
Combination  
Some data sheets contain a combination of products with different designations (Advance Information,  
Preliminary, or Full Production). This type of document distinguishes these products and their designations  
wherever necessary, typically on the first page, the ordering information page, and pages with the DC  
Characteristics table and the AC Erase and Program table (in the table notes). The disclaimer on the first  
page refers the reader to the notice on this page.  
Full Production (No Designation on Document)  
When a product has been in production for a period of time such that no changes or only nominal changes  
are expected, the Preliminary designation is removed from the data sheet. Nominal changes may include  
those affecting the number of ordering part numbers available, such as the addition or deletion of a speed  
option, temperature range, package type, or VIO range. Changes may also include those needed to clarify a  
description or to correct a typographical error or incorrect specification. Spansion Inc. applies the following  
conditions to documents in this category:  
“This document states the current technical specifications regarding the Spansion product(s)  
described herein. Spansion Inc. deems the products to have been in sufficient production volume such  
that subsequent versions of this document are not expected to change. However, typographical or  
specification corrections, or modifications to the valid combinations offered may occur.”  
Questions regarding these document designations may be directed to your local sales office.  
2
S71WS-P based MCP Products  
S71WS-P_00_A16 November 11, 2010  
S71WS-P based MCP Products  
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode  
Flash Memory with CellularRAM  
Data Sheet  
Features  
Power supply voltage of 1.7 to 1.95V  
Flash access time: 80 ns, 20 ns  
pSRAM burst frequency: 66 MHz, 80 MHz, 104 MHz  
Package:  
– 8.0 x 11.6 mm MCP  
Operating Temperature  
– –25°C to +85°C (wireless)  
Flash burst frequencies: 66 MHz, 80 MHz, 104 MHz  
pSRAM Access time: 70 ns, 20 ns  
The S71WS series is a product line of stacked packages and consists of:  
One S29WS-P NOR flash memory die  
CellularRAM die  
The products covered by this document are listed in the table below.  
CellularRAM Density (Mb)  
Device  
32 Mb  
64 Mb  
128 Mb  
S29WS512P  
S29WS256P  
S29WS128P  
S71WS512PD0  
S71WS256PC0  
S71WS128PB0  
Note:  
For a full list of OPNs, please contact the local sales representative or refer to the Ordering Information valid combinations tables.  
For detailed specifications, please refer to the individual data sheets.  
Document  
Publication Identification Number (PID)  
S29WS-P_00  
S29WS-P  
128M CellularRAM Type 5  
CustComspec_00  
64M CellularRAM PN: SWM064D133S1R  
32M CellularRAM PN: SWM032D133S1R  
SWM064D133S1R  
SWM032D133S1R  
Publication Number S71WS-P_00  
Revision A  
Amendment 16  
Issue Date November 11, 2010  
D a t a S h e e t  
1. Product Selector Guide  
Model  
Number  
Flash Density  
(Mb)  
CellularRAM  
Density (Mb)  
Flash Speed  
(MHz)  
CellularRAM  
Speed (MHz)  
Device  
CellularRAM Supplier  
Package  
S71WS512PD0HH3  
S71WS512PD0HH3  
S71WS512PD0HH3  
S71WS256PC0HH3  
S71WS256PC0HH3  
S71WS128PB0HH3  
S71WS128PB0HH3  
S71WS128PB0HH3  
YL  
YR  
YV  
YL  
YR  
RL  
RR  
RV  
104  
80  
512  
256  
128  
128  
64  
Type 5  
66  
104  
80  
84 ball MCP  
8x11.6x1.2 mm  
104  
SWM064D133S1R  
SWM032D133S1R  
104  
80  
32  
66  
2. MCP Block Diagram  
A0-Amax  
AFlash  
A0-Amax  
AFlash  
RDY  
RDY  
DQ0-DQ15  
DQ0-DQ15  
WS-P  
Flash  
Memory  
CLK  
CLK  
AVD#  
CE#  
OE#  
RESET#  
ACC  
AVD#  
F-CE#  
OE#  
F-RST#  
F-ACC  
F-WP#  
F-WE#  
VSS  
VSS  
WP#  
WE#  
VCC  
F-VCC  
VCCQ  
F-VCCQ  
A0-Amax  
WAIT  
DQ0-DQ15  
CLK  
AVD#  
CE#  
OE#  
R-CE#  
pSRAM  
Memory  
R-LB#  
R-UB#  
LB#  
UB#  
WE#  
CRE  
R-CRE  
VSS  
VCC  
R-VCC  
VCCQ  
4
S71WS-P based MCP Products  
S71WS-P_00_A16 November 11, 2010  
D a t a S h e e t  
3. Connection Diagrams  
1
2
3
4
5
6
7
8
9
10  
A
DNU  
DNU  
B
C
D
E
F
AVD#  
F-WP#  
A3  
VSS  
A7  
CLK  
RFU  
F-VCC  
WE#  
RFU  
RFU  
A8  
RFU  
A11  
RFU  
RFU  
A15  
A21  
A22  
A16  
R-CRE  
VSS  
Legend  
R-LB#  
F-ACC  
Reserved for  
Future Use  
A6  
R-UB# F-RST#  
A19  
A9  
A12  
NOR Flash Only  
pSRAM Only  
A2  
A5  
A18  
A17  
DQ1  
DQ9  
DQ10  
DQ2  
VSS  
RDY  
RFU  
A20  
A23  
RFU  
A13  
A1  
A4  
A10  
DQ6  
DQ13  
DQ12  
DQ5  
RFU  
A14  
G
Flash & pSRAM  
Shared Only  
A0  
VSS  
OE#  
DQ0  
DQ8  
RFU  
RFU  
A24  
H
J
F-CE#  
R-CE#  
RFU  
RFU  
DQ3  
DQ4  
R-VCC  
RFU  
DQ15  
DQ7  
Do Not Use  
F-VCC  
DQ11  
F-VCC  
K
L
DQ14  
F-VCCQ  
RFU  
DNU  
RFU  
M
DNU  
DNU  
Note:  
1.  
V
pins must ramp simultaneously.  
CC  
MCP  
Flash-only Addresses  
A24-A23  
Shared Addresses  
A22-A0  
S71WS512PD0  
S71WS256PC0  
S71WS128PB0  
A23-A22  
A21-A0  
A22-A21  
A20-A0  
3.1  
3.2  
Special Handling Instructions For FBGA Package  
Special handling is required for Flash Memory products in FBGA packages.  
Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The  
package and/or data integrity may be compromised if the package body is exposed to temperatures above  
150°C for prolonged periods of time.  
Look-ahead Ballout for Future Designs  
Please refer to the Design-in Scalable Wireless Solutions with Spansion Products application note  
(publication number: Design_Scalable_Wireless). Contact your local Spansion sales representative for more  
details.  
November 11, 2010 S71WS-P_00_A16  
S71WS-P based MCP Products  
5
D a t a S h e e t  
3.3  
NOR Flash and pSRAM Input/Output Descriptions  
Signal  
Amax-A0  
DQ15-DQ0  
F-CE#  
Description  
Flash  
pSRAM  
NOR Flash Address inputs  
Flash Data input/output  
X
X
X
X
X
X
X
X
X
X
NOR Flash Chip-enable input #1. Asynchronous relative to CLK for Burst Mode.  
Output Enable input. Asynchronous relative to CLK for Burst mode.  
Write Enable input.  
OE#  
X
X
WE#  
F-V  
NOR Flash device power supply (1.7 V - 1.95 V).  
Input/Output Buffer power supply.  
CC  
CCQ  
SS  
F-V  
V
Ground  
X
RFU  
Reserved for Future Use. No device internal signal is currently connected to the package  
connector but there is potential future use for the connector for a signal. It is recommended  
to not use RFU connectors for PCB routing channels so that the PCB may take advantage  
of future enhanced features in compatible footprint devices.  
RDY  
CLK  
Flash ready output. Indicates the status of the Burst read. V = data valid. The Flash RDY  
OL  
pin is shared with the WAIT pin of the pSRAM.  
X
X
X
X
NOR Flash Clock, shared with CLK of burst-mode pSRAM.. The first rising edge of CLK in  
conjunction with AVD# low latches the address input and activates burst mode operation.  
After the initial word is output, subsequent rising edges of CLK increment the internal  
address counter. CLK should remain low during asynchronous access.  
AVD#  
NOR Flash Address Valid input. Shared with AVD# of burst-mode pSRAM. Indicates to  
device that the valid address is present on the address inputs.  
V
= for asynchronous mode, indicates valid address; for burst mode, causes starting  
X
X
IL  
address to be latched on rising edge of CLK.  
= device ignores address inputs  
V
IH  
F-RST#  
F-WP#  
NOR Flash hardware reset input. V = device resets and returns to reading array data  
X
X
IL  
NOR Flash hardware write protect input. V = disables program and erase functions in the  
IL  
four outermost sectors.  
F-ACC  
NOR Flash accelerated input. At V , accelerates programming; automatically places  
HH  
device in unlock bypass mode. At V , disables all program and erase functions. Should be  
X
IL  
at V for all other conditions.  
IH  
R-CE#  
R-CRE  
R-VCC  
R-UB#  
R-LB#  
DNU  
Chip-enable input for pSRAM  
X
X
X
X
X
Control Register Enable (pSRAM). For CellularRAM only.  
pSRAM Power Supply  
Upper Byte Control (pSRAM)  
Lower Byte Control (pSRAM)  
Do Not Use. A device internal signal may be connected to the package connector. The  
connection may be used by Spansion for test or other purposes and is not intended for  
connection to any host system signal. Any DNU signal related function will be inactive  
when the signal is at V . The signal has an internal pull-down resistor and may be left  
IL  
unconnected in the host system or may be tied to V . Do not use these connections for  
SS  
PCB signal routing channels. Do not connect any host system signal to these connections.  
Note: Some customers prefer being able to tie DNU signals to V on the PCB.  
SS  
6
S71WS-P based MCP Products  
S71WS-P_00_A16 November 11, 2010  
D a t a S h e e t  
4. Ordering Information  
The order number is formed by a valid combinations of the following:  
S71WS  
256  
P
C0  
H
H
3
YL  
0
PACKING TYPE  
0 = Tray  
2 = 7” Tape and Reel  
3 = 13” Tape and Reel  
MODEL NUMBER  
Refer to Product Selector Guide on page 4  
PACKAGE DESCRIPTOR  
3 = 84-ball Fine-pitch BGA, 11.6 mm x 8 mm  
MATERIAL SET  
H = Low-Halogen, Pb-free  
PACKAGE TYPE  
H = 1.2 mm MCP FBGA  
CellularRAM DENSITY  
D0 = 128 Mb  
C0 = 64 Mb  
B0 = 32 Mb  
PROCESS TECHNOLOGY  
P = 90 nm, MirrorBit® Technology  
CODE FLASH DENSITY  
512 = 512 Mb  
256 = 256 Mb  
128 = 128 Mb  
PRODUCT FAMILY  
S71WS Stacked Products (MCP)  
1.8 V NOR Flash with pSRAM  
4.1  
Valid Combinations  
Valid Combinations list configurations planned to be supported in volume for this device. Consult your local  
sales office to confirm availability of specific valid combinations and to check on newly released  
combinations.  
Valid Combination  
Package  
Code Flash  
Denisty (Mb) Technology  
Process  
CellularRAM  
Density  
Product Family  
Type /  
Material  
Model Number Combo  
Packing Type  
128  
B0  
C0  
D0  
HH3  
HH3  
HH3  
RL, RR, RV  
YL, YR  
S71WS  
256  
512  
P
0, 2, 3 (Note 1)  
YL, YR, YV  
Notes:  
1. Packing Type 0 is standard. Specify other options as required.  
2. BGA package marking omits leading S and packing type designator from ordering part number.  
November 11, 2010 S71WS-P_00_A16  
S71WS-P based MCP Products  
7
D a t a S h e e t  
5. Physical Dimensions  
6. TLA084— 84-ball Fine Pitch Ball Grid Array (FBGA) 8 x 11.6 mm Package  
A
D1  
D
eD  
0.15  
(2X)  
C
10  
9
8
SE  
7
7
6
E
B
E1  
5
4
3
2
1
eE  
J
H
G
F
E
D
C
B
A
M
L K  
INDEX MARK  
10  
PIN A1  
CORNER  
PIN A1  
CORNER  
7
SD  
0.15  
(2X)  
C
TOP VIEW  
BOTTOM VIEW  
0.20  
C
C
A2  
A
0.08  
C
A1  
SIDE VIEW  
6
84X  
b
0.15  
0.08  
M
C
C
A
B
M
NOTES:  
PACKAGE  
JEDEC  
TLA 084  
N/A  
1. DIMENSIONING AND TOLERANCING METHODS PER  
ASME Y14.5M-1994.  
2. ALL DIMENSIONS ARE IN MILLIMETERS.  
D x E  
11.60 mm x 8.00 mm  
PACKAGE  
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010.  
SYMBOL  
MIN  
---  
NOM  
---  
MAX  
NOTE  
4.  
e REPRESENTS THE SOLDER BALL GRID PITCH.  
A
A1  
1.20  
---  
PROFILE  
5. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D"  
DIRECTION.  
0.17  
0.81  
---  
BALL HEIGHT  
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE  
"E" DIRECTION.  
A2  
---  
0.97  
BODY THICKNESS  
BODY SIZE  
D
11.60 BSC.  
8.00 BSC.  
8.80 BSC.  
7.20 BSC.  
12  
n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS  
FOR MATRIX SIZE MD X ME.  
E
BODY SIZE  
D1  
MATRIX FOOTPRINT  
MATRIX FOOTPRINT  
6
7
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL  
DIAMETER IN A PLANE PARALLEL TO DATUM C.  
E1  
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A  
AND B AND DEFINE THE POSITION OF THE CENTER SOLDER  
BALL IN THE OUTER ROW.  
MD  
ME  
n
MATRIX SIZE D DIRECTION  
MATRIX SIZE E DIRECTION  
BALL COUNT  
10  
84  
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE  
OUTER ROW SD OR SE = 0.000.  
Ø b  
eE  
0.35  
0.40  
0.45  
BALL DIAMETER  
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE  
OUTER ROW, SD OR SE = e/2  
0.80 BSC.  
0.80 BSC  
0.40 BSC.  
BALL PITCH  
eD  
BALL PITCH  
8. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED  
BALLS.  
SD / SE  
SOLDER BALL PLACEMENT  
A2,A3,A4,A5,A6,A7,A8,A9  
B1,B10,C1,C10,D1,D10,  
E1,E10,F1,F10,G1,G10,  
H1,H10,J1,J10,K1,K10,L1,L10,  
M2,M3,M4,M5,M6,M7,M8,M9  
DEPOPULATED SOLDER BALLS  
9. N/A  
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK  
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.  
3372-2 \ 16-038.22a  
8
S71WS-P based MCP Products  
S71WS-P_00_A16 November 11, 2010  
D a t a S h e e t  
7. Revision History  
7.1  
7.2  
7.3  
7.4  
Revision A (February 21, 2006)  
Initial release.  
Revision A1 (April 12, 2006)  
Added the S71WS512PC0  
Revision A2 (August 21, 2006)  
Added the S71WS512PD0 108MHz OPN  
Revision A3 (November 7, 2006)  
Added the S71WS256PD0 MCP  
Added the S71WS256PC0 MCP  
7.5  
Revision A4 (December 8, 2006)  
Added new CellularRAM Type 3  
Revised Valid Combination table  
Revised Product Selector Guide  
7.6  
7.7  
7.8  
7.9  
Revision A5 (January 11, 2007)  
Added S71WS128PC0 MCP offering  
Revision A6 (February 5, 2007)  
Added the S71WS512PD0JF4 OPN  
Revision A7 (March 27, 2007)  
Added the S71WS512PD0HF3SR OPN  
Revision A8 (July 30, 2007)  
Added 80 MHz S71WS128PC0 to Valid Combinations  
7.10 Revision A9 (September 4, 2007)  
Added 54 MHz and Asynchronous S71WS512PC0 MCP  
Revised Valid Combinations  
7.11 Revision A10 (October 19, 2007)  
Add 104 MHz, 80 Mhz and 66 MHz S71WS256PC, S71WS256PD and S71WS128PC MCP products  
Removed the S71WS512PD0JF MCP  
November 11, 2010 S71WS-P_00_A16  
S71WS-P based MCP Products  
9
D a t a S h e e t  
7.12 Revision A11 (March 14, 2008)  
Added package TSB084  
Added OPNs S71WS128PB0HF3SR/SV  
Added low-Halogen options for S71WS128PB0, S71WS128PC0, S71WS256PC0, S71WS256PD0, and  
S71WS512PD0  
7.13 Revision A12 (April 8, 2008)  
Added 64M CellularRAM Type 2  
Updated 128M CellularRAM Type 2 PID  
Removed 128M/64M CellularRAM Type 3 OPNs and PIDs  
7.14 Revision A13 (June 13, 2008)  
Added CellularRAM Type 3 and associated OPNs  
Added CellularRAM PN: SWM128D104R1R and associated OPNs  
Changed Flash Page Access time to 20 ns  
In Features, changed max Flash burst frequency from 108 MHz to 104 MHz  
Removed OPNs S71WS512PD0HH3HL, S71WS256PD0HH3HL, S71WS256PD0HH3HR  
7.15 Revision A14 (May 7, 2010)  
Added MCP OPNs S71WS256PC0HH3YR0/L0 and CellularRAM OPN SWM064D133S1R  
7.16 Revision A15 (June 30, 2010)  
Added MCP OPNs S71WS128PB0HH3RL0/RR0/RV0 for new 32 Mb CellularRAM OPN SWM032D133S1R  
7.17 Revision A16 (November 11, 2010)  
Removed all OPNs except S71WS512PD0HH3YL/YR/YV, S71WS256PC0HH3YR/YL and  
S71WS128PB0HH3RL/RR/RV  
Removed TSB084 drawing  
10  
S71WS-P based MCP Products  
S71WS-P_00_A16 November 11, 2010  
D a t a S h e e t  
Colophon  
The products described in this document are designed, developed and manufactured as contemplated for general use, including without  
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as  
contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the  
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,  
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for  
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to  
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor  
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design  
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal  
operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under  
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,  
the prior authorization by the respective government entity will be required for export of those products.  
Trademarks and Notice  
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under  
development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this  
document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose,  
merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any  
damages of any kind arising out of the use of the information in this document.  
Copyright ©2006- 2010 Spansion Inc. All rights reserved. Spansion®, the Spansion logo, MirrorBit®, MirrorBit® Eclipse, ORNAND, EcoRAM™  
and combinations thereof, are trademarks and registered trademarks of Spansion LLC in the United States and other countries. Other names  
used are for informational purposes only and may be trademarks of their respective owners.  
November 11, 2010 S71WS-P_00_A16  
S71WS-P based MCP Products  
11  

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Stacked Multi-Chip Product (MCP)
SPANSION

S71WS256JA0BAW2Y3

Stacked Multi-Chip Product (MCP)
SPANSION

S71WS256JA0BAWAY0

Stacked Multi-Chip Product (MCP)
SPANSION

S71WS256JA0BAWAY2

Stacked Multi-Chip Product (MCP)
SPANSION

S71WS256JA0BAWAY3

Stacked Multi-Chip Product (MCP)
SPANSION

S71WS256JA0BAWTY0

Stacked Multi-Chip Product (MCP)
SPANSION