SF25N10D4 [SPECTRUM]
Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN;
| 型号： | SF25N10D4 |
| 厂家： | 
SPECTRUM MICROWAVE, INC. |
| 描述： | Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN 局域网 脉冲 晶体管 |
| 文件： | 总2页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SF25N10D4
PRODUCT DATA SHEET
100 VOLT, 25 AMP N-CHANNEL MOSFET IN HERMETIC TO-254 PACKAGE
ABSOLUTE MAXIMUM RATINGS @ TC = 25°C, unless otherwise stated
Parameter
Rating
Units
BVDSS
Drain to Source Breakdown Voltage
Continuous Drain Current
100
34
V
A
ID @VGS = 10V, TC = 25°C
ID @VGS = 10V, TC = 100°C Continuous Drain Current
21
136
A
A
IDM
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Gate to Source Voltage
150
W
VGS
dv/dt
TJ
±20
V
Peak Diode Recovery dv/dt
Operating Junction Temperature
Storage Temperature
5.5
V/ns
°C
°C
°C
-55 to +150
-55 to +150
300
TSTG
Lead Temperature (0.063 in. from case for 10s)
ELECTRICAL CHARACTERISTICS @ T = 25°C, unless otherwise stated
J
Parameter
Min.
Typ. Max. Units Test Conditions
BVDSS
Drain to Source
100
-
-
V
VGS = 0V, ID = 1.0 mA
Breakdown Voltage
RDS(on)
Static Drain to Source On
State Resistance
-
0.055
0.065
VGS = 10V, ID = 21A
VGS(th)
gfs
Gate Threshold Voltage
2.0
9.0
-
-
4.0
-
V
VDS = VGS, ID = 250 µA
VDS 15V, IDS = 20A
Forward
Transconductance
Zero Gate Voltage
Drain Current
IDSS
25
VDS = 0.8 x Max. Rating, VGS = 0V
-
-
µA
250
VDS = 0.8 x Max. Rating
VGS = 0V, TJ = 125°C
IGSS
IGSS
Gate to Source Leakage
Forward
Gate to Source Leakage
Reverse
-
-
-
-
100
nA
nA
VGS = 20V
-100
VGS = -20V
Qg
Total Gate Charge
-
-
-
-
-
-
125
22
VGS = 10V, ID = 34A
Qgs
Qgd
Gate to Source Charge
Gate to Drain Charge
nC
VDS = Max. Rating X 0.5
65
FMI
•
530 Turnpike Street
•
North Andover, Massachusetts
•
Tel: 978.975.3385
•
Fax: 978.975.3506
SF25N10D4
PRODUCT DATA SHEET
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Min.
Typ. Max. Units Test Conditions
IS
Continuous Source
-
-
34
Current (Body Diode)
Pulsed Source Current
(Body Diode)
A
ISM
-
-
136
VSD
trr
Diode Forward Voltage
-
-
-
-
1.8
V
TJ = 25°C, IS = 25A, VGS = 0V
Reverse Recovery Time
500
nS
TJ = 25°C, IF = 25A, di/dt 100A/µS
THERMAL RESISTANCE
Parameter
Min.
Typ. Max. Units Test Conditions
RthJC
RthCS
Junction-to-Case
Case-to-Sink
-
-
-
0.8
-
0.2
°C/W
RthJA
Junction-to-Ambient
-
-
50
MECHANICAL OUTLINE
0.540"
.040"
.050"
.144 DIA
0.800"
0.660"
0.540"
1
2
3
0.500"
.150"
.045"
.035"
.260"
.250"
.150"
PIN CONNECTION
PIN 1: DRAIN
PIN 2: SOURCE
PIN 3: GATE
FMI
•
530 Turnpike Street
•
North Andover, Massachusetts
•
Tel: 978.975.3385
•
Fax: 978.975.3506
相关型号：
SF25N20D4
Power Field-Effect Transistor, 35A I(D), 200V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN
SPECTRUM
SF25N20D4
Power Field-Effect Transistor, 35A I(D), 200V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN
APITECH
©2020 ICPDF网 联系我们和版权申明