EGP10B [SSC]
Glass Passivated Junction Fast Efficient Rectifiers; 玻璃钝化结快速高效整流器
| 型号： | EGP10B |
| 厂家： | 
SILICON STANDARD CORP. |
| 描述： | Glass Passivated Junction Fast Efficient Rectifiers |
| 文件： | 总3页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EGP10D
Glass Passivated Junction
Fast Efficient Rectifiers
PRODUCT SUMMARY
Reverse Voltage 50 to 400 Volts
Forward Current 1.0 Ampere
FEATURES
Cavity-free glass-passivated junction
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Solder Dip 260 °C, 40 seconds
MECHANICAL DATA
Case: DO-204AL, molded epoxy over glass body Epoxy meets
UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per J-STD-002B
and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high reliability
grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Weight: 0.012 ounce, 0.34 gram
Pb-free; RoHS-compliant
07/11/2007 Rev.1.00
www.SiliconStandard.com
1
EGP10D
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 oC ambient temperature unless otherwise specified.
EGP
10A
EGP
10B
EGP
10C
EGP
10D
EGP
10F
EGP
10G
Parameter
Symbol
Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
Volts
Volts
Volts
Maximum DC blocking voltage
100
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=55oC
IF(AV)
1.0
Amp
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
VF
IR
30.0
Amps
Volts
uA
Maximum instantaneous forward voltage at 1.0A
0.95
22.0
1.25
15.0
Maximum DC reverse current
at rated DC blocking voltage
@TA=25oC
5.0
100
@TA=125oC
Maximum reverse recovery time at IF = 0.5 A, IR = 1.0 A,
rr = 0.25 A
nS
trr
50
I
pF
oC/W
oC
Typical junction capacitance at 4.0 V, 1 MHz
Typical thermal resistance (Note 1)
CJ
RθJA
50.0
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Notes:
1. Thermal resistance from junction to ambient at 0.375"(9.5mm) lead length
2. Pulse test: 300us pulse width, 1% duty cycle
07/11/2007 Rev.1.00
www.SiliconStandard.com
2
EGP10D
RATINGS AND CHARACTERISTIC CURVES
(TA=25oC unless otherwise noted)
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
07/11/2007 Rev.1.00
www.SiliconStandard.com
3
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