FRA803G [SSC]
8.0 AMPS. Glass Passivated Fast Recovery Rectifiers; 8.0安培。玻璃钝化快速恢复整流器
| 型号： | FRA803G |
| 厂家： | 
SILICON STANDARD CORP. |
| 描述： | 8.0 AMPS. Glass Passivated Fast Recovery Rectifiers |
| 文件： | 总3页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FRA801G thru FRA807G
8.0 AMPS. Glass Passivated Fast
Recovery Rectifiers
FEATURES
TO-220AC
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.113(2.87)
.103(2.62)
.27(6.86)
.23(5.84)
High surge current capability
Low power loss
.594(15.1)
.587(14.9)
PIN1
2
.16(4.06)
.14(3.56)
MECHANICAL DATA
.11(2.79)
.10(2.54)
.56(14.22)
.53(13.46)
Cases: TO-220AC Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, Lead free. Leads
solderable per MIL-STD-202, Method 208
guaranteed
.037(0.94)
.027(0.68)
.025(0.64)
.014(0.35)
.205(5.20)
.195(4.95)
PIN 1
PIN 2
CASE
Polarity: As marked
High temperature soldering guaranteed:
Dimensions in inches and (millimeters)
260 oC /10 seconds .16”, (4.06mm) from
case.
Mounting position: Any
Weight: 2.24 grams
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FRA FRA FRA FRA FRA FRA
FRA
Symbol
Type Number
Units
807G
801G 802G 803G 804G 805G 806G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100 200 400 600 800 1000
70 140 280 420 560 700
V
V
V
Maximum DC Blocking Voltage
100 200 400 600 800 1000
8.0
Maximum Average Forward Rectified Current
I(AV)
A
o
@T = 55 C
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
VF
IR
150
1.3
A
V
Maximum Instantaneous Forward Voltage @ 8.0A
o
Maximum DC Reverse Current @ T =25 C
C
5.0
uA
uA
o
at Rated DC Blocking Voltage @ TC=125 C
100
Maximum Reverse Recovery Time ( Note 2 )
Trr
Cj
150
250
500
nS
pF
Typical Junction Capacitance ( Note 1 ) T 25℃
J=
50
3.0
o
Typical Thermal Resistance (Note 3)
RθJA
C/W
o
Operating and Storage Temperature Range
T ,T
J
-65 to +150
C
STG
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Notes:
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate.
09/18/2007 Rev.1.00
www.SiliconStandard.com
1
FRA801G thru FRA807G
(FRA801G THRU FRA807G)
RATINGS AND CHARACTERISTIC CURVES
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- TYPICAL REVERSE CHARACTERISTICS
10
8
100
40
Tj=1250C
6
10
4
4
Tj=750C
2
2
1
0
0
50
100
150
CASE TEMPERATURE. (oC)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
0.4
0.2
150
125
100
75
Tj=250C
TJ=1250C
0.1
8.3ms Single Half Sine Wave
JEDEC Method
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
400
25
200
100
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
40
FIG.4- TYPICAL JUNCTION CAPACITANCE
120
100
80
60
40
20
0
20
10
Tj=250C
f=1.0MHz
Vsig=50mVp-p
4
2
1
0.4
Tj=25oC
Pulse Width=300
1% Duty Cycle
s
0.2
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
0.5
1
5
10
50
100
500 1000
REVERSE VOLTAGE. (V)
INSTANTANEOUS FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
10W
trr
NONINDUCTIVE
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE 2)
0
50Vdc
(approx)
(-)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
09/18/2007 Rev.1.00
www.SiliconStandard.com
2
FRA801G thru FRA807G
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
09/18/2007 Rev.1.00
www.SiliconStandard.com
3
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