MBR1060CT [SSC]
Schottky Barrier Recitifier; 肖特基势垒刘坤，李正熙
| 型号： | MBR1060CT |
| 厂家： | 
SILICON STANDARD CORP. |
| 描述： | Schottky Barrier Recitifier |
| 文件： | 总2页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1030CT-MBR1060CTꢀ
Schottky Barrier Recitifierꢀ
PRODUCT SUMMARY
TO-220
TO-220 Plastic-Encapsulate Transistors
1. ANODE
FEATURES
2. CATHODE
Scottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
3. ANODE
1 2 3
Very low forward voltage drop
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For use in low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
1
2
3
Pb-free; RoHS-compliant
ELECTRICAL CHARACTERISTICS
( Tamb = 25oC unless otherwise specified )
MBR
MBR
MBR
MBR
MBR
MBR
Characteristic
Symbol
Unit
1030CT 1035CT 1040CT 1045CT 1050CT 1060CT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
30
21
35
40
28
45
50
35
60
42
V
VR(RMS)
IO
24.5
31.5
V
A
PMS Reverse Voltage
Average Rectified Output Current
10
125
1.0
(Note 1)
@ TC=105℃
Non-Repetitive Peak Forward Surge Current
IFSM
IRRM
VFM
IRM
A
A
8.3ms Single half sine-wave superimposed on
rated load
(JEDEC Method)
Repetitive Peak Reverse Surge Current
@ t≤ 2.0µs
0.57
0.70
0.80
0.95
Forward Voltage Drop
@ IF=5.0A, TC=125℃
0.70
0.84
V
@ IF=5.0A, TC= 25℃
@ IF=10A, TC= 25℃
@ TC= 25℃
0.1
15
Peak Reverse Current
mA
at Rated DC Blocking Voltage
@ TC=125℃
Cj
150
pF
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
℃
Notes: 1. Thermal resistance junction to case mounted heat sink.
2. Measured at 1.OMHz and applied reverse voltage of 4.0V DC.
01/29/2007 Rev.1.00
www.SiliconStandard.com
1
MBR1030CT-MBR1060CTꢀ
Schottky Barrier Recitifierꢀ
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
01/29/2007 Rev.1.00
www.SiliconStandard.com
2
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