S1G [SSC]

Surface Mount Glass Passivated Rectifiers; 表面安装玻璃钝化整流器
S1G
型号: S1G
厂家: SILICON STANDARD CORP.    SILICON STANDARD CORP.
描述:

Surface Mount Glass Passivated Rectifiers
表面安装玻璃钝化整流器

文件: 总4页 (文件大小:230K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
S1A – S1M  
Surface Mount Glass Passivated Rectifiers  
FEATURES  
„
„
„
Reverse Voltage 50 to 1000 V  
Forward Current 1.0 A  
Plastic package has Underwriters Laboratory Flammability  
Classification 94V-0  
„
„
„
„
„
For surface mounted applications  
Low profile package  
Built-in strain relief, ideal for automated placement  
Glass passivated chip junction  
High temperature soldering: 250/10 seconds at terminals  
MECHANICAL DATA  
„
Case: JEDEC DO-214AC (SMA) molded plastic over glass  
passivated chip  
„
Terminals: Solder plated, solder-able per MIL-STD-750,  
Method 2026  
„
„
Polarity: Color band denotes cathode end  
Weight: 0.002 ounce, 0.064 gram  
Pb-free; RoHS-compliant  
01/01/2007 Rev. 2.00  
www.SiliconStandard.com  
1
S1A – S1M  
MAXIMUM RATINGS (TA=25unless otherwise specified)  
Parameter  
Symbols S1A  
S1B  
S1D  
S1G  
S1J  
S1K  
S1M Units  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
200  
400  
600  
800  
560  
800  
1000 Volts  
Maximum RMS voltage  
70  
140  
200  
280  
400  
1.0  
420  
600  
700  
Volts  
Maximum DC blocking voltage  
100  
1000 Volts  
Amp  
Maximum average forward rectified current  
(see fig.1)  
IF(AV)  
Peak forward surge current 8.3ms single  
half sine-wave superimposed on rated  
load(JEDEC Method) TL =110℃  
IFSM  
40.0  
1.0  
30.0  
Amps  
Maximum instantaneous forward voltage at  
1.0A  
VF  
IR  
1.10  
Volts  
uA  
5.0  
Maximum DC reverse current @TA =25℃  
at rated DC blocking voltage  
@TA=125℃  
50  
1.0  
12  
Typical reverse recovery time at  
IF =0.5A, IR=1.0A, Irr =0.25A  
uS  
pF  
trr  
Typical junction capacitance at 4.0V, 1MHz  
Typical thermal resistance (NOTE 1)  
CJ  
R
75  
27  
85  
30  
/W  
RJL  
Operating junction temperature range  
Storage temperature range  
TJ  
-55 to +150  
-55 to +150  
TSTG  
NOTE:  
1.  
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with  
0.2 x 0.2" (5.0 x 5.0mm) copper pad areas  
01/01/2007 Rev. 2.00  
www.SiliconStandard.com  
2
S1A – S1M  
A
RATINGS AND CHARACTERISTIC CURVES  
R
(
01/01/2007 Rev. 2.00  
www.SiliconStandard.com  
3
S1A – S1M  
Disclaimer  
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard  
Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or  
completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other  
intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes  
as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability,  
functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described  
herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard  
Corporation or any third parties.  
01/01/2007 Rev. 2.00  
www.SiliconStandard.com  
4

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