SMBJ78 [SSC]
Transient Voltage Suppressors; 瞬态电压抑制器型号: | SMBJ78 |
厂家: | SILICON STANDARD CORP. |
描述: | Transient Voltage Suppressors |
文件: | 总4页 (文件大小:755K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMBJ Series
Transient Voltage Suppressors
PRODUCT SUMMARY
Stand-off Voltage ratings from 5.0V to 440V
Peak pulse power 600W in SMB surface-mount package
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Low profile package with built-in strain relief for surface-mount
Glass passivated junction
Low incremental surge resistance, excellent clamping capability
Peak pulse power capability of 600W with a 10/1000us waveform,
repetition rate (duty cycle): 0.01%
Very fast response time
High temperature soldering guaranteed:
260°C for 10 seconds at terminals
MECHANICAL DATA
Case: JEDEC DO-214AA (SMB) molded plastic over passivated chip
Terminals: Matte-Sn plated, solderable per MIL-STD-750,
Method 2026
Polarity: For uni-directional types the band denotes the cathode, which
is positive with respect to the anode under normal TVS operation.
Mounting position: Any
Weight: 0.003oz., 0.093g
Pb-free; RoHS-compliant
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. SMBJ10CA). Electrical characteristics apply in both directions.
MAXIMUM RATINGS
Rating at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with
PPPM
IPPM
Minimum 600
See Next Table
100
W
A
a 10/1000us waveform (1,2) (see Fig. 1)
Peak pulse current with a 10/1000us waveform (1)
Peak forward surge current, 8.3ms single half sine-wave
uni-directional only (2)
IFSM
A
Typical thermal resistance, junction to ambient (3)
RθJA
RθJL
100
20
°C/W
°C/W
°C
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Notes: 1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2.
2. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal
3. Mounted on minimum recommended pad layout
9/21/2006 Rev.4.01
www.SiliconStandard.com
1 of 4
SMBJ Series
ELECTRICAL PARAMETERS
At 25°C ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only)
Maximum
reverse
leakage
at VWM
Maximum
peak pulse
surge
Breakdown voltage
V(BR)
Maximum
clamping
voltage
Device marking
code
Test
current
at IT
Stand-off
voltage
VWM
(Volts) (1)
current
(3)
(2)
ID
IPPM
at IPPM
Device Type
UNI
KD
KE
KF
KG
KH
KK
KL
KM
KN
KP
KQ
KR
KS
KT
KU
KV
KW
KX
KY
KZ
LD
LE
LF
BI
AD
AE
AF
AG
AH
AK
AL
Min.
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
Max.
7.82
7.07
8.15
7.37
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
(mA)
(Volts)
(uA)
800
800
800
800
500
500
200
200
100
100
50
(A)
VC (Volts)
SMBJ5.0
10
10
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
62.5
65.2
52.6
58.3
48.8
53.6
45.1
50.0
42.0
46.5
40.0
44.1
37.7
41.7
35.5
39.0
31.9
35.3
29.9
33.0
27.3
30.2
25.2
27.9
23.3
25.9
22.3
24.6
20.8
23.1
19.7
21.7
18.6
20.5
16.8
18.5
15.2
16.9
14.0
15.4
12.9
14.3
12.0
13.2
11.2
12.4
9.6
(5)
SMBJ5.0A
9.2
SMBJ6.0
SMBJ6.0A
SMBJ6.5
SMBJ6.5A
SMBJ7.0
SMBJ7.0A
SMBJ7.5
SMBJ7.5A
SMBJ8.0
SMBJ8.0A
SMBJ8.5
SMBJ8.5A
SMBJ9.0
SMBJ9.0A
SMBJ10
10
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
10
10
10
10
AM
AN
AP
AQ
AR
AS
AT
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
50
20
20
AU
AV
AW
AX
AY
AZ
BD
BE
BF
BG
BH
BK
BL
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
SMBJ10A
SMBJ11
SMBJ11A
SMBJ12
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
SMBJ12A
SMBJ13
SMBJ13A
SMBJ14
LG
LH
LK
LL
SMBJ14A
SMBJ15
SMBJ15A
SMBJ16
LM
LN
LP
LQ
LR
LS
LT
BM
BN
BP
BQ
BR
BS
BT
BU
BV
BW
BX
BY
BZ
CD
CE
CF
CG
CH
CK
SMBJ16A
SMBJ17
SMBJ17A
SMBJ18
SMBJ18A
SMBJ20
LU
LV
SMBJ20A
SMBJ22
LW
LX
LY
SMBJ22A
SMBJ24
SMBJ24A
SMBJ26
LZ
MD
ME
MF
MG
MH
MK
SMBJ26A
SMBJ28
SMBJ28A
SMBJ30
SMBJ30A
Notes:
1. V(BR) measured after IT applied for 300us square wave pulse or equivalent
2. Surge current waveform per Fig. 3 and derate per Fig. 2
3. For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
4. All terms and symbols are consistent with ANSI/IEEE C62.35
5. For the bidirectional SMBJ5.0CA, the maximum V(BR) is 7.25V.
9/21/2006 Rev.4.01
www.SiliconStandard.com
2 of 4
SMBJ Series
ELECTRICAL PARAMETERS
At 25°C ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only)
Maximum
reverse
leakage
at VWM
Maximum
peak pulse
surge
Maximum
clamping
voltage
at IPPM
Breakdown voltage
V(BR)
Device marking
code
Test
current
at IT
Stand-off
voltage
VWM
(Volts) (1)
current
(3)
(2)
ID
IPPM
VC
Device type
SMBJ33
UNI
ML
MM
MN
MP
MQ
MR
MS
MT
MU
MV
MW
MX
MY
MZ
ND
NE
NF
BI
CL
CM
CN
CP
CQ
CR
CS
CT
CU
CV
CW
CX
CY
CZ
DD
DE
DF
DG
DH
DK
DL
DM
DN
DP
DQ
DR
DS
DT
DU
DV
DW
DX
DY
DZ
FD
FE
FF
Min.
36.7
36.7
40.0
40.0
44.4
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
Max.
44.9
40.6
48.9
44.2
54.3
49.1
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
106
95.8
115
(mA)
(Volts)
(uA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
(A)
10.2
11.3
9.3
10.3
8.4
9.3
7.8
8.6
7.5
8.3
7.0
7.8
6.6
7.3
6.2
6.9
5.8
6.4
5.6
6.2
5.3
5.8
4.8
5.3
4.5
5.0
4.3
4.8
4.0
4.4
3.8
4.1
3.4
3.7
3.1
3.4
2.8
3.1
2.6
2.9
2.2
2.5
2.1
2.3
2.0
2.2
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.9
(Volts)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
33
33
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
292
324
356
405
486
567
648
713
SMBJ33A
SMBJ36
36
SMBJ36A
SMBJ40
36
40
SMBJ40A
SMBJ43
40
43
SMBJ43A
SMBJ45
43
45
SMBJ45A
SMBJ48
45
48
SMBJ48A
SMBJ51
48
51
SMBJ51A
SMBJ54
51
54
SMBJ54A
SMBJ58
54
58
SMBJ58A
SMBJ60
NG
NH
NK
NL
58
60
SMBJ60A
SMBJ64
60
64
SMBJ64A
SMBJ70
NM
NN
NP
NQ
NR
NS
NT
64
70
SMBJ70A
SMBJ75
70
75
SMBJ75A
SMBJ78
75
78
SMBJ78A
SMBJ85
78
NU
NV
NW
NX
NY
NZ
85
SMBJ85A
SMBJ90
104
122
111
85
90
SMBJ90A
SMBJ100
SMBJ100A
SMBJ110
SMBJ110A
SMBJ120
SMBJ120A
SMBJ130
SMBJ130A
SMBJ150
SMBJ150A
SMBJ160
SMBJ160A
SMBJ170
SMBJ170A
SMBJ180A
SMBJ200A
SMBJ220A
SMBJ250A
SMBJ300A
SMBJ350A
SMBJ400A
SMBJ440A
90
136
123
149
135
163
147
176
159
204
185
218
197
231
209
222
247
272
309
371
432
494
543
100
100
110
110
120
120
130
130
150
150
160
160
170
170
180
200
220
250
300
350
400
440
111
PD
PE
PF
122
122
133
133
144
144
167
167
178
178
189
189
201
224
246
279
335
391
447
492
PG
PH
PK
PL
FG
FH
FK
FL
PM
PN
PP
PQ
PR
PT
FM
FN
FP
FQ
FR
FT
PV
PX
PZ
FV
FX
FZ
QE
QG
QK
QM
GE
GG
GK
GM
Notes:
1. V(BR) measured after IT applied for 300us square wave pulse or equivalent
2. Surge current waveform per Fig. 3 and derate per Fig. 2
3. For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
4. All terms and symbols are consistent with ANSI/IEEE C62.35
5. For parts without A, the VBR is +10%
9/21/2006 Rev.4.01
www.SiliconStandard.com
3 of 4
SMBJ Series
RATINGS AND CHARACTERISTIC CURVES
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
9/21/2006 Rev.4.01
www.SiliconStandard.com
4 of 4
相关型号:
SMBJ78-G
Trans Voltage Suppressor Diode, 600W, 78V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN
SENSITRON
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