SMCJ70 [SSC]
Transient Voltage Suppressors; 瞬态电压抑制器型号: | SMCJ70 |
厂家: | SILICON STANDARD CORP. |
描述: | Transient Voltage Suppressors |
文件: | 总4页 (文件大小:726K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMCJ Series
Transient Voltage Suppressors
PRODUCT SUMMARY
Stand-off Voltage ratings from 5.0V to 440V
Peak pulse power 1500W in SMC surface-mount package
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Low profile package with built-in strain relief for surface-mount
Glass passivated junction
Low incremental surge resistance, excellent clamping capability
Peak pulse power capability of 1500W with a 10/1000us waveform,
repetition rate (duty cycle): 0.01%
Very fast response time
High temperature soldering guaranteed:
260°C for 10 seconds at terminals
MECHANICAL DATA
Case: JEDEC DO-214AB (SMC) molded plastic over passivated chip
Terminals: Matte-Sn plated, solderable per MIL-STD-750,
Method 2026
Polarity: For uni-directional types the band denotes the cathode, which
is positive with respect to the anode under normal TVS operation.
Mounting position: Any
Weight: 0.007oz., 0.21g
Pb-free; RoHS-compliant
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. SMCJ10CA). Electrical characteristics apply in both directions.
MAXIMUM RATINGS
Rating at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with
PPPM
IPPM
Minimum 1500
See Next Table
200
W
A
a 10/1000us waveform (1,2) (see Fig. 1)
Peak pulse current with a 10/1000us waveform (1)
Peak forward surge current, 8.3ms single half sine-wave
uni-directional only (2)
IFSM
A
Typical thermal resistance, junction to ambient (3)
RθJA
RθJL
75
15
°C/W
°C/W
°C
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Notes: 1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2.
2. Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads at each terminal
3. Mounted on minimum recommended pad layout
9/21/2006 Rev.4.01
www.SiliconStandard.com
1 of 4
SMCJ Series
ELECTRICAL PARAMETERS
At 25°C ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only)
Maximum
reverse
leakage
at VWM
Maximum
peak pulse
surge
Breakdown voltage
V(BR)
Maximum
clamping
voltage
Device marking
code
Test
current
at IT
Stand-off
voltage
VWM
(Volts) (1)
current
(3)
(2)
ID
IPPM
at IPPM
Device type
UNI
GDD
GDE
GDF
GDG
GDH
GDK
GDL
GDM
GDN
GDP
GDQ
GDR
GDS
GDT
GDU
GDV
GDW
GDX
GDY
GDZ
GED
GEE
GEF
GEG
GEH
GEK
GEL
GEM
GEN
GEP
GEQ
GER
GES
GET
GEU
GEV
GEW
GEX
GEY
GEZ
GFD
GFE
GFF
GFG
GFH
GFK
BI
Min.
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
Max.
7.82
7.07
8.15
7.37
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
(mA)
(Volts)
(uA)
1000
1000
1000
1000
500
500
200
200
100
100
50
(A)
156.3
163.0
131.6
145.6
122.0
133.9
112.8
125.0
104.9
116.3
100.0
110.3
94.3
104.2
88.8
97.4
79.8
88.2
74.6
82.4
68.2
75.4
63.0
69.8
58.1
64.7
55.8
61.5
52.1
57.7
49.2
54.3
46.6
51.4
41.9
46.3
38.1
42.3
34.9
38.6
32.2
35.6
30.0
33.0
28.0
31.0
VC (Volts)
SMCJ5.0
BDD
BDE
BDF
BDG
BDH
BDK
BDL
BDM
BDN
BDP
BDQ
BDR
BDS
BDT
BDU
BDV
BDW
BDX
BDY
BDZ
BED
BEE
BEF
BEG
BEH
BEK
BEL
BEM
BEN
BEP
BEQ
BER
BES
BET
BEU
BEV
BEW
BEX
BEY
BEZ
BFD
BFE
BFF
BFG
BFH
BFK
10
10
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
9.6
(5)
SMCJ5.0A
SMCJ6.0
SMCJ6.0A
SMCJ6.5
SMCJ6.5A
SMCJ7.0
SMCJ7.0A
SMCJ7.5
SMCJ7.5A
SMCJ8.0
SMCJ8.0A
SMCJ8.5
SMCJ8.5A
SMCJ9.0
SMCJ9.0A
SMCJ10
9.2
10
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
50
20
20
10.0
10.0
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
SMCJ10A
SMCJ11
SMCJ11A
SMCJ12
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
SMCJ12A
SMCJ13
SMCJ13A
SMCJ14
SMCJ14A
SMCJ15
SMCJ15A
SMCJ16
SMCJ16A
SMCJ17
SMCJ17A
SMCJ18
SMCJ18A
SMCJ20
SMCJ20A
SMCJ22
SMCJ22A
SMCJ24
SMCJ24A
SMCJ26
SMCJ26A
SMCJ28
SMCJ28A
SMCJ30
SMCJ30A
Notes:
1. V(BR) measured after IT applied for 300us square wave pulse or equivalent
2. Surge current waveform per Fig. 3 and derate per Fig. 2
3. For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
4. All terms and symbols are consistent with ANSI/IEEE C62.35
5. For the bi-directional SMCG/SMCJ5.0CA, the maximum V(BR) is 7.25V.
9/21/2006 Rev.4.01
www.SiliconStandard.com
2 of 4
SMCJ Series
ELECTRICAL PARAMETERS
At 25°C ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only)
Maximum
reverse
leakage
at VWM
Maximum
peak pulse
surge
Maximum
clamping
voltage
at IPPM
Breakdown voltage
V(BR)
Device marking
code
Test
current
at IT
Stand-off
voltage
VWM
(Volts) (1)
current
(3)
(2)
ID
IPPM
VC
Device type
SMCJ33
UNI
GFL
BI
Min.
36.7
36.7
40.0
40.0
44.4
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
Max.
44.9
40.6
48.9
44.2
54.3
49.1
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
106
95.8
115
(mA)
(Volts)
(uA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
(A)
25.4
28.1
23.3
25.8
21.0
23.3
19.6
21.6
18.7
20.6
17.5
19.4
16.5
18.2
15.6
17.2
14.6
16.0
14.0
15.5
13.2
14.6
12.0
13.3
11.2
12.4
10.8
11.9
9.9
(Volts)
BFL
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
33
33
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93
SMCJ33A
SMCJ36
GFM
GFN
GFP
GFQ
GFR
GFS
GFT
GFU
GFV
GFW
GFX
GFY
GFZ
GGD
GGE
GGF
GGG
GGH
GGK
GGL
GGM
GGN
GGP
GGQ
GGR
GGS
GGT
GGU
GGV
GGW
GGX
GGY
GGZ
GHD
GHE
GHF
GHG
GHH
GHK
GHL
GHM
GHN
GHP
GHQ
GHR
GHT
GHV
GHX
GHZ
GJE
BFM
BFN
BFP
BFQ
BFR
BFS
BFT
BFU
BFV
BFW
BFX
BFY
BFZ
BGD
BGE
BGF
BGG
BGH
BGK
BGL
BGM
BGN
BGP
BGQ
BGR
BGS
BGT
BGU
BGV
BGW
BGX
BGY
BGZ
BHD
BHE
BHF
BHG
BHH
BHK
BHL
BHM
BHN
BHP
BHQ
BHR
BHT
BHV
BHX
BHZ
BJE
36
SMCJ36A
SMCJ40
36
40
SMCJ40A
SMCJ43
40
43
SMCJ43A
SMCJ45
43
45
SMCJ45A
SMCJ48
45
48
SMCJ48A
SMCJ51
48
51
SMCJ51A
SMCJ54
51
54
SMCJ54A
SMCJ58
54
58
SMCJ58A
SMCJ60
58
60
107
96
SMCJ60A
SMCJ64
60
64
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
292
324
356.
405
486
567
648
713
SMCJ64A
SMCJ70
64
70
SMCJ70A
SMCJ75
70
75
SMCJ75A
SMCJ78
75
78
SMCJ78A
SMCJ85
78
85
SMCJ85A
SMCJ90
104
122
111
85
10.9
9.4
90
SMCJ90A
SMCJ100
SMCJ100A
SMCJ110
SMCJ110A
SMCJ120
SMCJ120A
SMCJ130
SMCJ130A
SMCJ150
SMCJ150A
SMCJ160
SMCJ160A
SMCJ170
SMCJ170A
SMCJ180A
SMCJ200A
SMCJ220A
SMCJ250A
SMCJ300A
SMCJ350A
SMCJ400A
SMCJ440A
90
10.3
8.4
136
123
149
135
163
147
176
159
204
185
218
197
231
209
222
247
272
309
371
432
494
543
100
100
110
110
120
120
130
130
150
150
160
160
170
170
180
200
220
250
300
350
400
440
111
9.3
122
122
133
133
144
144
167
167
178
178
189
189
209
224
246
279
335
391
447
492
7.7
8.5
7.0
7.8
6.5
7.2
5.6
6.2
5.2
5.8
4.9
5.5
5.0
4.6
4.2
3.7
3.1
GJG
GJK
BJG
BJK
2.6
2.3
GJM
BJM
2.1
Notes:
1. V(BR) measured after IT applied for 300us square wave pulse or equivalent
2. Surge current waveform per Fig. 3 and derate per Fig. 2
3. For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
4. All terms and symbols are consistent with ANSI/IEEE C62.35
5. For parts without A, the VBR is +10%
9/21/2006 Rev.4.01
www.SiliconStandard.com
3 of 4
SMCJ Series
RATINGS AND CHARACTERISTIC CURVES
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
9/21/2006 Rev.4.01
www.SiliconStandard.com
4 of 4
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